JPS6095885A - Thin film el element - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention This invention relates to the application of alternating current electrolysis to EL', (
Electroluminescence) ・
The present invention aims to "improve the structure of the 111IEI-element which exhibits light emission of 11", and particularly relates to the 111EL element in which the structure of extracting the active electrode from the transparent electrode is improved. .

Prior Art 1 A:x(1) Explanation FIG. 1 is a partially cutaway perspective view of IL" which explains the electric top extraction paulownia strip in the conventional thin R Shima Hi I-Kiko.

Referring to FIG.
, a transparent mold 1-2 formed on a glass substrate 1, a transparent mold 1-2, and a first film 3, a film 3, and a second film laminated further above the transparent mold' (÷12). The EL redundant light section consisting of the insulating bracken 5, etc., and the EL light emitting section 1.
R'J 2F Re1,...: Back...11 Electric tree 6. This type of EL light emitting device is transparent. f1 horizontal 2・J
3 J: and back electrode 6 are respectively 'f! ! Several strips of electric wire are arranged at the bottom of the groove, and intersect with each other. There are 12 rows of 1 picture elements on this mutually intersecting makeup display screen, which are customary for poles n and Y.

・By the way, □, the conventional thin film E1-Rinko, the transparent type S-2 is ITOB% (lndluml-InOxfdJl) consisting of In, o8'l and :5nO7.
). This transparent fl12t again! 2
In order to take out the electrodes from
An i-laminated film 7 is formed by vapor deposition and photoetching as shown in FIG. Similarly, an AfL-1'jifl1 layer film 7 is connected to the back electrode 6 made of All Al, and functions as an electrode extraction terminal.

FIG. 2 is a schematic partial cutaway sectional view for explaining the problems encountered in the conventional thin film EL element shown in FIG. As is clear from FIG. 2, the vapor deposition edge 8 of the above-mentioned Au-Nim layer 7 is a transparent Wi
It is formed in contact with the pole 2. However, since such an Afl-Ni laminated film 7 is formed by vapor deposition, the deposition conditions of the crotch f3 are different near the vapor deposition edge 8, and the film is not necessarily stable.
may deteriorate and become highly resistive. For this reason, when driving the thin film EL element, the drive current frequently causes connection failures due to disconnection of the ITO film in the area indicated by arrow A in FIG. 2, which is a drawback.

OBJECTS OF THE INVENTION Therefore, an object of the present invention is to provide a thin film 11 having an electrode extraction structure that does not cause deterioration of a transparent electrode made of an ITO film.
The purpose of the present invention is to provide an EL element.

Structure of the Invention Simply put, the present invention comprises a substrate, a transparent electrode made of In2O5 and 5nOz formed on the substrate, an E1 light emitting part and a back electrode laminated on the transparent electrode, and the transparent electrode. In a 1111 EL device equipped with an Am-Ni laminated layer formed by vapor deposition on a substrate for extraction to the outside, a transparent electrode protective film is used to prevent the vapor-deposited edge of the A fL-N1 product WR film from contacting the transparent electrode. This thin film EL device is characterized in that it covers at least a portion of the transparent electrode, and the evaporated edge of the A11-Nl product W4 film is located on the transparent electrode protective film.

Other features of the invention will become clear from the following description of the embodiments.

DESCRIPTION OF EMBODIMENTS FIGS. 3 to 5 are schematic partial cutaway sectional views showing each process for manufacturing an electrode extraction structure in an embodiment of the present invention. Referring to FIG.
Formed by vapor deposition. Next, as shown in FIG. 4, an AQ, -1 laminated film 7 is formed by vapor deposition on the upper surface of the transparent electrode protective film 11, and at a position where the transparent electrode 2 is not present below.
It's true. Furthermore, as shown in FIG. 5, the transparent electrode is fixed by a known method such as photo etching. By deleting a part of 11211, the first *stream side II extraction structure of the present invention is completed. , as is clear from Fig. 5, AQ-'N
It can be seen that the vapor deposition edge 8 of the i-laminated film 7 is not in direct contact with the transparent electrode 2, but is in contact with the upper surface of the transparent electrode protection film 11. Therefore, the deterioration 1 of the transparent electrode 2 due to the vapor deposition edge 8 of the Au.--NivAll layer 7 no longer occurs. Note that in this first embodiment, the transparent electrode protection 1
Since 1111 is made of AfL, the transparent electrode 2
It also functions to electrically connect the and Au-Nim layer film 7.

In the embodiment shown in FIG.
As shown in the figure, the 1,4jf-Ni laminated film 7 may be in direct contact with the substrate 1 outside the transparent electrode protective film 11.

7 to 9 are schematic partially cutaway sectional views showing the manufacturing process of an electrode extraction structure according to a second embodiment of the present invention. Referring to FIG. 7, similar to the process in the first embodiment shown in FIG.
1111 is formed by vapor deposition. Next, as shown in FIG. 8, a /1-N1 laminated film 7 is deposited so that its WA edge 8 is above the transparent electrode protection m11 and is located above the transparent electrode elii2. Formed by next,
As shown in FIG. 9, for example, by photo-etching,
By removing a portion of the transparent electrode protective film 11 and the /1l-Nl laminated film 7, an ff1Ij extraction structure according to an embodiment of the present invention is obtained. As is clear from FIG. 9, in this example as well, when forming the A11-Nl product RII by vapor deposition, ff
A transparent electrode image 11 film 11 made of Au is present between the potato edge 8 and the transparent electrode 2. Therefore, it is possible to reliably prevent deterioration of the transparent R pole 2.

Na d3. Not limited to the steps described above, the same portion as shown in FIG. 10 can be obtained by changing the state shown in FIG.
〃It may be formed into a structure as shown in the blood diagram C.
Meng [Nawa 7: i ichimei electrode maintenance! ! The edge of the membrane 11 and l
＼Hiro-NilA layer film 7 is configured so that the vapor deposition edge 8 and Cbj are different from each other.

1 'I'' 1 Figure and U) Third length of the invention 7ii!i
There is a partially cutaway cross-sectional view C of a treadmill explaining an example. Here, a first insulating film 3 is placed on a transparent electrode 2 formed on a substrate 1.
Make the opening wider than J3. This first insulating film 3
Also buy some of the A fL-ru tree top layer 111J7
Formed by steaming -4. In this way, Afl-N
A deposition edge 8 of the first M film 7 is located on the first insulating film 3 . However, the vapor deposition edge 8 of the Nl laminated film 7 is
Since it contacts the 88 edge crotch 3 and does not directly contact the transparent electrode 2, the transparent electrode 2 does not deteriorate. In this embodiment, the transparent electrode protective film 11 in each of the embodiments described above is
There is no unique member, and the first insulator 113 also functions as the transparent electrode holding film 11. Further, a second insulating film may be used instead of the first insulating film.

According to experiments, the film thickness in each of the above-mentioned examples is /Ig! as the back electrode. is 2000~10000A
, the Δ visual power of the A-N1 laminated film 7 is 2000 to 10000 Δ in the structure shown in FIG. 6, 1.000 A or more in the structures shown in FIGS. 5, 9, and 10, and the It was confirmed that a total thickness of 10,000 A or less including the AfL film is appropriate.

This is because if the A-view IlI thickness of the terminal connection portion is too thick, the reliability of the terminal will decrease. In addition, Au-N1 laminated Il! The thickness of the Ni film applied to J7 is 1000 to 10
It has been confirmed that 0'O,OA is suitable.

Effects of the Invention As described above, according to the present invention, the transparent electrode retaining arm covers at least a portion of the transparent electrode so that the vapor deposition edge of the A a -Nl laminated film does not come into direct contact with the transparent 11′ Fi electrode. Cover it, and the vapor deposited end of the N1 top layer is formed so that it is located above the transparent electrode protection crotch.
-N 13th A u-N for transparent electrode and electrode extraction, which will not cause inferiority of the transparent electrode due to the vapor deposition edge of the product H.
It becomes possible to dramatically improve the reliability of the connection with the product WI.

[Brief explanation of the drawing]

FIG. 1 is a partially cutaway perspective view of approximately 1j for explaining the N1 structure of a conventional thin film EL element. FIG. 2 is a partially cutaway sectional view for explaining the electrode extraction structure of the thin 1131EL element shown in FIG. 3 to 5 are partially cutaway sectional views illustrating the manufacturing process of the first embodiment of the present invention. FIG. 6 is a partially cutaway sectional view of a modification of the embodiment shown in FIG. Figures 7 to 91. , L is a partially cutaway sectional view of each culm for manufacturing the electrode extraction structure of the second example of the present invention. FIG. 10 is a partially cutaway sectional view for explaining a modification of the embodiment shown in FIGS. 7 to 9. FIG. FIG. 11 shows the electrode extraction of the third embodiment of the invention of C! ! There is a partially cutaway sectional view C for explaining the structure. DESCRIPTION OF SYMBOLS 1...Substrate, 2...Transparent pole, 3...[First insulating film forming L light emitting part, 4...EL light emitting layer forming EL light emitting part, 5...EL 2nd insulation layer forming a light emitting part, 6... Back surface 11tii, 7. Au-Nl laminated film, 8... Evaporation edge, 11...) Transparent electrode protective film. n Patent Applicant Sharp Co., Ltd. Representative Patent Attorney Fuka Brother Kube Tsu::ko
,・(2 idiots)−°′Pa・・・”

Claims (1)

[Claims] A substrate and an In2'0.6 onibi 3 formed on the substrate.
A transparent electrode made of nO2, a U:l-emitting part and back surface laminated on the transparent electrode, an electrode, and a transparent electrode made of 9
A thin film containing an AC-NI thin film formed by vapor deposition on the substrate □ for taking out to the i part 1). A transparent electrode film covers at least a portion of the transparent electrode so as to avoid contact with the transparent electrode, and the evaporated edge of the A1-N1 laminated layer is positioned on the transparent electrode protection gI. A thin film EL element characterized by: □.