JPS6095620U

JPS6095620U - Semiconductor device for power control

Info

Publication number: JPS6095620U
Application number: JP18562483U
Authority: JP
Inventors: 雅博石川
Original assignee: 日産自動車株式会社
Priority date: 1983-12-02
Filing date: 1983-12-02
Publication date: 1985-06-29

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of drawings]

第１図は電力制御用半導体装置の従来例の概略図、第２
図はその動作波形図、第３図は本考案の一実施例を示す
回路図、第４図は本装置の正常時の動作波形図、第５図
は本装置の負荷短絡時の動作波形図である。１０：負荷、１．１：負荷駆動用ＭＯ３ＦＥＴ、　　１
２：第２Ｍ０３ＦＥＴ、　ｌ　３　：第３Ｍ０３ＦＥＴ
、　ｌ　４　：第４Ｍ０３ＦＥＴ、１５：可変抵抗、１
６：第１比較器、１７：電流検出回路、１８：平滑コン
デンサ、１９：第２比較器、２θ：三角波発生回路。Figure 1 is a schematic diagram of a conventional example of a semiconductor device for power control;
Figure 3 is a circuit diagram showing an embodiment of the present invention; Figure 4 is a diagram of the operating waveforms of this device during normal operation; Figure 5 is a diagram of the operating waveforms of this equipment when the load is short-circuited. It is. 10: Load, 1.1: MO3FET for load drive, 1
2: 2nd M03FET, l 3: 3rd M03FET
, l 4: 4th M03FET, 15: Variable resistance, 1
6: first comparator, 17: current detection circuit, 18: smoothing capacitor, 19: second comparator, 2θ: triangular wave generation circuit.

Claims

[Scope of utility model registration request]

In a power control semiconductor device that duty-controls a load current using a MOSFET, a second MOSFET of the same conductivity type as the load driving MO8FET and a load driving MO3F are used.
3rd M03FET and 4th M03FET of opposite conductivity type to ET
A series circuit of a second M03FET and a third M03FET and a series circuit of a fourth M03FET and a variable resistor are connected in parallel to a series circuit of a load driving MO3FET and a load. The output of the first comparator, which has the potential at the connection point as one input and the potential at the connection point between the second M03FET and the third M03FET as the other input, is the third M03FET and the fourth M03FET.
Controls the gate voltage of 3FET (7) and connects M for load driving.
O8FET, 2nd M03FET and 3rd M03FET
and a fourth M03FET as current mirrors, and input the voltage generated by the variable resistor into a smoothed voltage and the triangular wave voltage from the triangular wave generating circuit to a second comparator. MO for driving load by output
By controlling the gate voltage of the 5FET and the second M03FET, when the load is short-circuited, the load driving MO3
A semiconductor device for power control, characterized in that a FET is turned off to stop power supply to a load.