JPS6092680A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS6092680A JPS6092680A JP58200162A JP20016283A JPS6092680A JP S6092680 A JPS6092680 A JP S6092680A JP 58200162 A JP58200162 A JP 58200162A JP 20016283 A JP20016283 A JP 20016283A JP S6092680 A JPS6092680 A JP S6092680A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- parts
- case
- laser
- diffraction grating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体レーザに関する。特に光ピックアップ用
半漕体レーザに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to semiconductor lasers. In particular, it relates to a semicircular laser for an optical pickup.
近年、光学式ビデオディスク、ディジタルオーディオデ
ィスクが実用化され、そのプレーヤにおいては、光ピツ
クアップに半導体レーザが使われている。In recent years, optical video discs and digital audio discs have been put into practical use, and their players use semiconductor lasers for optical pickup.
半導体レーザを用いた光ピツクアップには種々なタイプ
が考案、実用化されているが、現在范も普及しているの
は3B(スリービーム)法と言われているものである。Various types of optical pickup using semiconductor lasers have been devised and put into practical use, but the one that is currently in widespread use is the so-called 3B (three beam) method.
第1図に3B法の光学系を示す。光学部品の配置の仕方
は一意的ではなく、例としてCαl 、 (blの2通
ルを挙げた。Cαl 、 1b1において同じ数字は同
一部品を示す、1cLlについて説明しようゆ半導体レ
ーザ1から出た光は回折格子2によって3本のビームに
なる。これらは偏光ビームスプリツ/3によpP波のみ
が通過し、コリメータレンズ4によシ平行光線となる。Figure 1 shows the optical system of the 3B method. The way the optical components are arranged is not unique, and two examples of Cαl, (bl are given here. In Cαl, 1b1, the same numbers indicate the same parts, 1cLl will be explained. The light emitted from the soy sauce semiconductor laser 1. is converted into three beams by the diffraction grating 2. Only the pP wave passes through the polarization beam splitter /3, and the beams become parallel beams by the collimator lens 4.
平行光線は4分の波長板を通過して円偏光とな)、対物
レンズ6によりディスク7上にスポットを形成する。The parallel light beams pass through a quarter-wave plate and become circularly polarized light), and form a spot on a disk 7 by an objective lens 6.
ディスク7で反射した光は再び4分の波長板を通過し、
偏光ビームスプリッタ3へ入射する。このとき、光はB
波となっているため反射し、シリンドリカルレンズ8を
通過し受光素子9に達する。The light reflected by the disk 7 passes through the quarter wavelength plate again,
The light enters the polarizing beam splitter 3. At this time, the light is B
Since it is a wave, it is reflected, passes through the cylindrical lens 8, and reaches the light receiving element 9.
161の配置はコリメータレンズ4が半導体レーザlの
隣シにきている点が(cLlとは異なっているが、原理
的には全く同じである。The arrangement of 161 is different from cLl in that the collimator lens 4 is located next to the semiconductor laser 1, but the principle is exactly the same.
3B法の部品点数は、上記の通)8種類である。The number of parts in the 3B method is 8 types as described above.
現在のところ、例えばディジタルオーディオディスクプ
レーヤにおいて七t%装置が比較的コンパクトであるに
しては、ピックアップが大きく、装置内への組み込みに
苦労している。また、従来のレコードプレーヤに比べ、
かなシ値段も高くなっている。これらの原因の一つは、
ピックアップの寸法が大きいことと、そのコストが高い
ことである。At present, for example, although the 7t% device in a digital audio disc player is relatively compact, the pickup is large and it is difficult to incorporate it into the device. Also, compared to conventional record players,
Kanashi prices are also getting higher. One of these causes is
The pickup is large in size and its cost is high.
そこで、本発明の目的は、小型、且つ、低コストを可能
にする光ピツクアップ用半導体レーザを提供することで
ある。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a semiconductor laser for optical pickup that is small in size and low in cost.
第2図は本発明の一具体例である。 10は半導レーザ
チップ、lliケース、12は回折格子である。FIG. 2 is a specific example of the present invention. 10 is a semiconductor laser chip, an lli case, and 12 is a diffraction grating.
従来、12の部分は透明ガラスの窓であったが、光ピツ
クアップの3B法では、必ず回折格子を使うので、透明
ガラスを回折格子で置き換えたのである。こうすること
により、部品点数が1つ減る。Conventionally, the 12 part was a transparent glass window, but since the 3B method of optical pickup always uses a diffraction grating, the transparent glass was replaced with a diffraction grating. By doing this, the number of parts is reduced by one.
第3図は本発明の他の具体例である。 13は半導体レ
ーザチップ、14は下ケースで、図示の如く筒の部分に
はオネジが切っである。15は回折格子で16は上ケー
スである。上ケース16の内側は下ケース14のネジに
適合するようにメネジが切っである。FIG. 3 shows another specific example of the present invention. 13 is a semiconductor laser chip, 14 is a lower case, and as shown in the figure, a male thread is cut in the cylindrical portion. 15 is a diffraction grating, and 16 is an upper case. The inside of the upper case 16 is internally threaded to fit the screws of the lower case 14.
17は透明ガラス、18は下ケースである。この具体例
では、用途に応じて、透明ガラスの付いた上ケースを使
うこともでき、回折格子の付いた上ケースを使うことも
できる。第2図の発明よpも汎用性が広い。17 is a transparent glass, and 18 is a lower case. In this specific example, depending on the purpose, an upper case with transparent glass or a diffraction grating can be used. The invention shown in FIG. 2 also has wide versatility.
本発明によJ)%3B法の光ピツクアップにおいて、部
品点数が1つ減る。更て、第1図において偏光ビームス
プリッタをハーフプリズムに置キ換えて4分の波長板を
除く光学系にすると、部品点数1d2点減る。この光学
系は僅かに光を半導体レーザへ戻し、雑音を抑制する場
合に使われる。According to the present invention, the number of parts is reduced by one in the optical pickup of the J)%3B method. Furthermore, if the polarizing beam splitter in FIG. 1 is replaced with a half prism to create an optical system that excludes the quarter wavelength plate, the number of parts will be reduced by 1d2. This optical system is used to suppress noise by returning a small amount of light to the semiconductor laser.
本発明によjl、3B法の光ピツクアップにおいて、部
品点数は1〜2点減り、小型軽量化、低コスト化が可能
となる。これにより、ディジタルオーディオディスクプ
レーヤ、光学式ビデオディスクプレーヤの小型軽量化、
低コスト化が可能となる。According to the present invention, the number of parts can be reduced by 1 to 2 in the optical pickup of the JL and 3B methods, making it possible to reduce the size, weight, and cost. This makes digital audio disc players and optical video disc players smaller and lighter.
Cost reduction becomes possible.
以上、述べた通り、ケースの窓に回折格子を設けた半導
体レーザを3B法光ピツクアツプに使用すれば、光ピツ
クアップの小型軽量化、低コスト化が可能となり、その
結果これを用いたプレーヤの小型軽量化、低コスト化も
可能となる。As mentioned above, if a semiconductor laser with a diffraction grating provided on the case window is used for a 3B optical pickup, it becomes possible to make the optical pickup smaller, lighter, and lower in cost, and as a result, the player using this can be made smaller. It also becomes possible to reduce weight and cost.
第1図1α1【b)Φ拳3B法光ピックアンプの光学系
第2図・・本発明の一具体例
第3図・・本発明の他の具体例
1:半導体レーザ
2:回折格子
3:偏光ビームスプリッタ
4:コリメーメeレンズ
5:4分の波長板
6:対物レンズ
7:ディスク
8ニジリントリカル・レンズ
9:受光素子
lO二半導体レーザ0チップ
lJ:ケース
12:回折格子
13:半導体レーザ・チップ
14:下ケース
15:回折格子
16:上ケース
17:透明ガラス
18:上ケース
以 上
出願人 株式会社諏訪精工舎
(d> (&)
第1図
第2図
Q
第3図Fig. 1 1α1 [b) Optical system of Φ fist 3B method optical pick amplifier Fig. 2: One specific example of the present invention Fig. 3: Other specific example of the present invention 1: Semiconductor laser 2: Diffraction grating 3: Polarizing beam splitter 4: Collimator e-lens 5: Quarter-wave plate 6: Objective lens 7: Disk 8 Ni-lintrical lens 9: Photodetector element 1O2 semiconductor laser 0 chip 1J: Case 12: Diffraction grating 13: Semiconductor laser chip 14 : Lower case 15: Diffraction grating 16: Upper case 17: Transparent glass 18: Above case Applicant: Suwa Seikosha Co., Ltd. (d>(&) Figure 1 Figure 2 Q Figure 3
Claims (1)
ースの窓部分に回折格子を備えていることを特徴とする
半導体レーザ。 (2)半導体レーザ・チップがマウントされている下ケ
ースの筒部外側にオネジが切られていることと、回折格
子もしくけ透明ガラスを窓部分に備えている上ケースの
筒部内側にメネジが切られているととt−a徴とする半
導体レーザ。[Scope of Claims] A semiconductor laser characterized in that a diffraction grating is provided in a window portion of a case of the semiconductor laser from which light from the il+ semiconductor laser is emitted. (2) There is a male thread on the outside of the cylindrical part of the lower case where the semiconductor laser chip is mounted, and a female thread on the inside of the cylindrical part of the upper case where the window part is equipped with transparent glass that also features a diffraction grating. A semiconductor laser that exhibits a t-a signal when cut.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58200162A JPS6092680A (en) | 1983-10-26 | 1983-10-26 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58200162A JPS6092680A (en) | 1983-10-26 | 1983-10-26 | Semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6092680A true JPS6092680A (en) | 1985-05-24 |
Family
ID=16419816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58200162A Pending JPS6092680A (en) | 1983-10-26 | 1983-10-26 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6092680A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02120857U (en) * | 1989-03-15 | 1990-09-28 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5723293A (en) * | 1980-07-18 | 1982-02-06 | Canon Inc | Semiconductor laser device |
JPS57205833A (en) * | 1981-06-12 | 1982-12-17 | Sony Corp | Optical reproducing device |
-
1983
- 1983-10-26 JP JP58200162A patent/JPS6092680A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5723293A (en) * | 1980-07-18 | 1982-02-06 | Canon Inc | Semiconductor laser device |
JPS57205833A (en) * | 1981-06-12 | 1982-12-17 | Sony Corp | Optical reproducing device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02120857U (en) * | 1989-03-15 | 1990-09-28 |
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