JPH0846294A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPH0846294A
JPH0846294A JP23098695A JP23098695A JPH0846294A JP H0846294 A JPH0846294 A JP H0846294A JP 23098695 A JP23098695 A JP 23098695A JP 23098695 A JP23098695 A JP 23098695A JP H0846294 A JPH0846294 A JP H0846294A
Authority
JP
Japan
Prior art keywords
semiconductor laser
diffraction grating
case
upper case
transparent glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23098695A
Other languages
Japanese (ja)
Inventor
Shigeru Kogure
茂 木暮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP23098695A priority Critical patent/JPH0846294A/en
Publication of JPH0846294A publication Critical patent/JPH0846294A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To realize the reduction of the mumber of part items and the cost of optical pick-up of three beam method using the diffraction grating by providing the semiconductor system having high general purpose applicability. CONSTITUTION:Within an upper and lower case containing a semiconductor laser device, an upper case 16 provided with a diffraction grating on a window part and an upper case 18 provided with a transparent glass 17 are quick disconnectably constituted. In such a constitution, the cylindrical inside of the upper case is internally threaded while the cylindrical outside of the lower case is externally threaded.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は半導体レーザに関す
る。特に光ピックアップ用半導体レーザに関する。
TECHNICAL FIELD The present invention relates to a semiconductor laser. Particularly, it relates to a semiconductor laser for an optical pickup.

【0002】[0002]

【従来の技術】近年、光学式ビデオディスク、ディジタ
ルオーディオディスクが実用化され、そのプレーヤにお
いては、光ピックアップに半導体レーザが使われてい
る。
2. Description of the Related Art In recent years, optical video discs and digital audio discs have been put into practical use, and semiconductor lasers are used for optical pickups in their players.

【0003】半導体レーザを用いた光ピックアップには
種々なタイプが発明、実用化されているが、現在最も普
及しているのは3B(スリービーム)法といわれるてい
るものである。
Various types of optical pickups using semiconductor lasers have been invented and put into practical use, but the most prevalent one is the 3B (three-beam) method.

【0004】図1に3B法の光学系を示す。光学部品の
配置の仕方は一意的でなく、例として(a)、(b)の
2通りを挙げた。(a)、(b)において同じ数字は同
一部品を示す。(a)について説明しよう。半導体レー
ザ1から出た光は回折格子2によって3本のビームにな
る。これらは偏光ビームスプリッタ3によりP波のみが
通過し、コリメータレンズ4により平行光線となる。平
行光線は4分の波長板を通過して円偏光となり、対物レ
ンズ6によりディスク7上にスポットを形成する。
FIG. 1 shows an optical system of the 3B method. The method of arranging the optical components is not unique, and two examples (a) and (b) are given as examples. The same numbers in (a) and (b) indicate the same parts. Let us explain about (a). The light emitted from the semiconductor laser 1 becomes three beams by the diffraction grating 2. Only the P wave passes through the polarization beam splitter 3 and is converted into parallel rays by the collimator lens 4. The parallel light rays pass through a quarter-wave plate to become circularly polarized light, and a spot is formed on the disk 7 by the objective lens 6.

【0005】ディスク7で反射した光は再び4分の波長
板を通過し、偏光ビームスプリッタ3へ入射する。この
とき、光はS波となっているため反射し、シリンドカル
レンズ8を通過し受光素子9に達する。(b)の配置は
コリメータレンズ4が半導体レーザ1の隣りにきている
点が(a)とは異なっているが、原理的には全く同じで
ある。
The light reflected by the disk 7 again passes through the quarter-wave plate and enters the polarization beam splitter 3. At this time, since the light is an S wave, it is reflected, passes through the cylindrical lens 8, and reaches the light receiving element 9. The arrangement of (b) is different from that of (a) in that the collimator lens 4 is adjacent to the semiconductor laser 1, but in principle, it is exactly the same.

【0006】[0006]

【発明が解決しようとする課題】3B法の部品点数は、
上記の通り8種類である。現在のところ、例えばディジ
タルオーディオディスクプレーヤにおいては、装置が比
較的コンパクトであるにしては、ピックアップが大き
く、装置内への組み込みに苦労している。また、従来の
レコードプレーヤに比べ、かなり値段も高くなってい
る。これらの原因の一つは、ピックアップの寸法が大き
いことと、そのコストが高いことである。
The number of parts in the 3B method is
There are eight types as described above. At present, for example, in a digital audio disc player, the pickup is large even if the device is relatively compact, and it is difficult to incorporate the pickup into the device. Moreover, the price is considerably higher than that of the conventional record player. One of these causes is the large size of the pickup and its high cost.

【0007】そこで、本発明の目的は、小型、且つ、低
コストを可能にする光ピックアップ用半導体レーザを提
供することである。
Therefore, an object of the present invention is to provide a semiconductor laser for an optical pickup which is small in size and low in cost.

【0008】[0008]

【課題を解決するための手段】[Means for Solving the Problems]

(1)本発明の半導体レーザは、半導体レーザの光が出
射する該半導体レーザのケースの窓部分に回折格子を備
えていることを特徴とする。
(1) The semiconductor laser of the present invention is characterized in that a diffraction grating is provided in a window portion of a case of the semiconductor laser through which light of the semiconductor laser is emitted.

【0009】(2)さらに、(1)において、半導体レ
ーザ・チップがマウントされている下ケースの筒部外側
にオネジが切られていることと、前記回折格子もしくは
透明ガラスを前記窓部分に備えている上ケースの筒部内
側にメネジが切られていることを特徴とする。
(2) Further, in (1), a male screw is cut outside the cylindrical portion of the lower case on which the semiconductor laser chip is mounted, and the diffraction grating or transparent glass is provided in the window portion. It is characterized in that a female screw is cut inside the tubular portion of the upper case.

【0010】[0010]

【発明の実施の形態】図2は本発明の一具体例である。
10は半導体レーザチップ、11はケース、12は回折
格子である。従来、12の部分は透明ガラスの窓であっ
たが、光ピックアップの3B法は、必ず回折格子を使う
ので、透明ガラスを回折格子で置き換えたのである。こ
うすることにより、部品点数が1つ減る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 2 is a specific example of the present invention.
Reference numeral 10 is a semiconductor laser chip, 11 is a case, and 12 is a diffraction grating. Conventionally, the portion 12 is a transparent glass window, but since the 3B method of the optical pickup always uses the diffraction grating, the transparent glass is replaced with the diffraction grating. By doing so, the number of parts is reduced by one.

【0011】図3は本発明の他の具体例である。13は
半導体レーザチップ、14は下ケースで、図示の如く筒
の部分にはオネジが切ってある。15は回折格子で16
は上ケースである。上ケース16の内側は下ケース14
のネジに適合するようにメネジが切ってある。17は透
明ガラス、18は下ケースである。この具体例では、用
途に応じて、透明ガラスの付いた上ケースを使うことも
でき、回折格子の付いた上ケースを使うこともできる。
図2の発明よりも汎用性が広い。
FIG. 3 shows another embodiment of the present invention. Reference numeral 13 is a semiconductor laser chip, and 14 is a lower case. As shown in the drawing, a male thread is cut in the cylindrical portion. 15 is a diffraction grating 16
Is the upper case. The inside of the upper case 16 is the lower case 14
The female thread is cut to fit the screw of. Reference numeral 17 is a transparent glass, and 18 is a lower case. In this specific example, an upper case with transparent glass or an upper case with a diffraction grating can be used depending on the application.
It is more versatile than the invention of FIG.

【0012】本発明により、3B法の光ピックアップに
おいて、部品点数が1つ減る、更に、図1において偏光
ビームスプリッタをハーフプリズムに置き換えて4分の
波長板を除く光学系にすると、部品点数は2点減る。こ
の光学系は僅かに半導体レーザへ戻し、雑音を抑制する
場合に使われる。
According to the present invention, in the optical pickup of the 3B method, the number of parts is reduced by one, and when the polarization beam splitter is replaced with a half prism in FIG. Reduce by 2 points. This optical system is used to slightly return to the semiconductor laser and suppress noise.

【0013】本発明により、3B法の光ピックアップに
おいて、部品点数は1〜2点減り、小型軽量化、低コス
ト化が可能となる。これにより、ディジタルオーディオ
ディスクプレーヤ、光学式ビデオディスクプレーヤの小
型軽量化、低コスト化が可能となる。
According to the present invention, in the 3B method optical pickup, the number of parts can be reduced by 1 to 2 points, and the size, weight and cost can be reduced. As a result, it is possible to reduce the size, weight and cost of the digital audio disc player and the optical video disc player.

【0014】[0014]

【発明の効果】以上、述べた通り、ケースの窓に回折格
子を設けた半導体レーザを3B法ピックアップに使用す
れば、光ピックアップの小型軽量化、低コスト化が可能
となり、その結果これを用いたプレーヤの小型軽量化、
低コスト化も可能となる。
As described above, if the semiconductor laser having the diffraction grating on the window of the case is used for the 3B method pickup, the size and weight of the optical pickup can be reduced and the cost can be reduced. The player was smaller and lighter,
Cost reduction is also possible.

【図面の簡単な説明】[Brief description of drawings]

【図1】(a)、(b)は3B法光ピックアップの光学
系を示す図。
1A and 1B are views showing an optical system of a 3B method optical pickup.

【図2】本発明の一具体例を示す図。FIG. 2 is a diagram showing a specific example of the present invention.

【図3】本発明の他の具体例を示す図。FIG. 3 is a diagram showing another specific example of the present invention.

【符号の説明】[Explanation of symbols]

1:半導体レーザ 2:回折格子 3:偏光ビームスプリッタ 4:コリメータ・レンズ 5:4分の波長板 6:対物レンズ 7:ディスク 8:シリコンドリカル・レンズ 9:受光素子 10:半導体レーザ・チップ 11:ケース 12:回折格子 13:半導体レーザ・チップ 14:下ケース 15:回折格子 16:上ケース 17:透明ガラス 18:上ケース 1: Semiconductor Laser 2: Diffraction Grating 3: Polarization Beam Splitter 4: Collimator Lens 5: Wavelength of 4 Minutes 6: Objective Lens 7: Disc 8: Silicon-Dryal Lens 9: Light-Receiving Element 10: Semiconductor Laser Chip 11 : Case 12: Diffraction Grating 13: Semiconductor Laser Chip 14: Lower Case 15: Diffraction Grating 16: Upper Case 17: Transparent Glass 18: Upper Case

【手続補正書】[Procedure amendment]

【提出日】平成7年10月6日[Submission date] October 6, 1995

【手続補正1】[Procedure Amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】特許請求の範囲[Name of item to be amended] Claims

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【特許請求の範囲】[Claims]

【手続補正2】[Procedure Amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0008[Correction target item name] 0008

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0008】[0008]

【課題を解決するための手段】本発明の半導体レーザ
は、レーザ光の出射面に窓を有するケースと、前記ケー
ス内に内蔵された半導体レーザチップと、前記半導体チ
ップに電気的に接続され、前記ケース外部に引き出され
たリ−ド線と、を備えた半導体レーザにおいて、前記ケ
ースの窓に回折格子を備えたことを特徴とする。
Means for Solving the Problems The semiconductor laser of the present invention
Is a case having a window on the emitting surface of the laser beam, and the case
Semiconductor laser chip built in the
It is electrically connected to the case and pulled out of the case.
A semiconductor laser having a lead wire
It is characterized in that a diffraction grating is provided in the window of the source.

【手続補正3】[Procedure 3]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0009[Correction target item name] 0009

【補正方法】削除[Correction method] Delete

【手続補正4】[Procedure amendment 4]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0014[Correction target item name] 0014

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0014】[0014]

【発明の効果】以上述べたとおり、本発明による半導体
レーザは、ケースのレーザ光出射面に回折格子を備えて
いるので、回折格子の面積を小さくすることができ、更
に、ピックアップ光学系に組み込む際の光軸調整が軽減
できる。また、光ピックアップ光学系に回折格子を保持
するための保持部材が不要となり、部品点数、組立工数
を削減することができ、光ピックアップ光学系の生産性
の向上、ピックアップ光学系の小型化、低コスト化が可
能となる。
As described above, the semiconductor according to the present invention
The laser has a diffraction grating on the laser light emitting surface of the case.
Since the area of the diffraction grating can be reduced,
In addition, the optical axis adjustment when incorporating it into the pickup optical system is reduced.
it can. Also, a diffraction grating is held in the optical pickup optical system.
No holding member is required, and the number of parts and assembly steps
Can be reduced and the productivity of optical pickup optical system
Improvement, downsizing of pickup optical system, and cost reduction
It becomes Noh.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】半導体レーザの光が出射する該半導体レー
ザのケースの窓部分に回折格子を備えていることを特徴
とする半導体レーザ。
1. A semiconductor laser having a diffraction grating in a window portion of a case of the semiconductor laser through which light of the semiconductor laser is emitted.
【請求項2】半導体レーザ・チップがマウントされてい
る下ケースの筒部外側にオネジが切られていることと、
前記回折格子もしくは透明ガラスを前記窓部分に備えて
いる上ケースの筒部内側にメネジが切られていることを
特徴とする請求項1記載の半導体レーザ。
2. A male screw is formed on the outside of the cylindrical portion of the lower case on which the semiconductor laser chip is mounted,
2. The semiconductor laser according to claim 1, wherein a female screw is formed inside a cylindrical portion of an upper case having the diffraction grating or transparent glass in the window portion.
JP23098695A 1995-09-08 1995-09-08 Semiconductor laser Pending JPH0846294A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23098695A JPH0846294A (en) 1995-09-08 1995-09-08 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23098695A JPH0846294A (en) 1995-09-08 1995-09-08 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPH0846294A true JPH0846294A (en) 1996-02-16

Family

ID=16916446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23098695A Pending JPH0846294A (en) 1995-09-08 1995-09-08 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPH0846294A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5723293A (en) * 1980-07-18 1982-02-06 Canon Inc Semiconductor laser device
JPS57205833A (en) * 1981-06-12 1982-12-17 Sony Corp Optical reproducing device
JPS58153388A (en) * 1982-03-09 1983-09-12 Toshiba Corp Monitoring method for semiconductor laser output beam

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5723293A (en) * 1980-07-18 1982-02-06 Canon Inc Semiconductor laser device
JPS57205833A (en) * 1981-06-12 1982-12-17 Sony Corp Optical reproducing device
JPS58153388A (en) * 1982-03-09 1983-09-12 Toshiba Corp Monitoring method for semiconductor laser output beam

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