JPS6081855A - Semiconductor device - Google Patents

Abstract

PURPOSE:To enable to check the characteristics of a semiconductor device in a wafer or pellet state by isolating a circuit portion which extends from a bipolar transistor in a bipolar integrated circuit device, and separating and providing in parallel bonding pads at the ends. CONSTITUTION:A plurality of circuit elements including a bipolar transistor 2 are formed on a pelletlike semiconductor substrate 1, circuit portions 3, 4, 5 which extends from the base, collector and emitter are isolated, and bonding pads 6a, 6b, 7a, 7b, 8a, 8b are isolated as pairs and provided in parallel at the ends. Measuring elements are contacted with the pads 6a, 7a, 8a to measure the characteristics of the transistor 2, and metal members 9 are used to shortcircuit between the bonding pads of pairs only the transistors 2 which satisfy the characteristics. Thus, the supply of products having improper characteristics can be completely prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a semiconductor device, and more particularly to a substrate structure configured to enable checking the characteristics of a specific bipolar transistor at the wafer stage in a bipolar integrated circuit device.

[Background technology]

In general, a bipolar analog integrated circuit device is constructed by forming a plurality of circuit elements including bipolar transistors depending on the application on a semiconductor substrate, and connecting them with wires as appropriate.
For example, a 3-terminal regulator.

It is widely used in car stereo power amplifiers, etc.

For example, FIG. 1 is a circuit diagram of an eight-terminal regulator, which is composed of a regulator circuit A and an overheat protection circuit B. The regulator circuit A includes an output stage power transistor C, an active load D, and a current limit circuit E.
, reference voltage circuit F.

It consists of an error amplification circuit G and the like, and when an input voltage is applied to the input terminal IN, it is compared with a reference voltage and the error is fed back to the output side to keep the output voltage at the output terminal OUT constant. Further, in the overheat protection circuit B, when the temperature rise exceeds a set operating temperature due to internal or external factors, the overheat limiting transistor Tr becomes conductive, and the output stage of the regulator circuit A is cut off, thereby protecting the entire device.

By the way, this overheat protection circuit B is configured as shown in FIG. 2, for example. In this circuit, the voltage at point B is set to be slightly lower than the VBE of the first transistor Tr, and if the temperature rises excessively for some reason, the voltage at the first transistor Tr.

VBE decreases at a rate of 2 mV/° C. and becomes conductive when it becomes lower than the voltage at point B. Accordingly, the second transistor Tr also becomes conductive and the regulator circuit A is protected.

In this circuit, it is known that the characteristics of each transistor vary greatly depending on the manufacturing conditions, but it is completely impossible to check the characteristics of only a specific transistor during the manufacturing process. For this reason, pass/fail judgment is only made through characteristic inspection of the product, and if the product is judged to be defective, the heat sinks, leads, and molding resin that fix the semiconductor element are wasted, and the integrated circuit There is a problem that the cost of the device is greatly affected.

In addition, in a power integrated circuit device applied to a car stereo amplifier, the output distortion rate is affected by the current amplification rate hFE of the transistor; as hFE increases, the distortion rate decreases, and conversely, as hFE decreases, the distortion rate decreases. The distortion rate becomes an adult. However, since it is not possible to check the desired characteristics of the transistor during the manufacturing process, it is unavoidable to check the characteristics of the finished product to determine its acceptability. For this reason, heat sinks, leads, and molding resin are wasted as in the second gear.
This will have a large impact on costs.

Therefore, if the characteristics of a specific transistor in an integrated circuit device can be checked in the wafer or pellet state, it is possible to prevent the incorporation of defective elements in advance, and the materials required for it can be used effectively, which not only improves work efficiency. This is desirable because it enables a significant improvement in cost.

[Disclosure of the invention]

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a semiconductor device that allows checking the characteristics of a specific bipolar transistor in a wafer or pellet state with a simple configuration.

A feature of the present invention is that in a semiconductor substrate including a plurality of circuit elements including bipolar transistors, each of which is connected with appropriate wiring, at least two circuit parts extending from the specific bipolar transistor are separated, and , bonding pads and pads are arranged in parallel at each end so as to have an electrical connection relationship, and after checking the characteristics of a specific bipolar transistor, the adjacent bonding pads are short-circuited. It is in.

According to this invention, since the circuit portion extending from a specific bipolar transistor is separated and the bonding pad portions are arranged in parallel and separated from each other at each end, characteristics can be checked in a wafer or pellet state. For this reason, heat sinks,
Lead.

5- Materials such as mold resin can be used advantageously, and costs can be effectively reduced.

[Best mode for carrying out the invention]

Next, an example of application of the present invention to a bipolar integrated circuit device will be described with reference to FIGS. 3 and 4.

In FIG. 3, 1 is a pellet-shaped semiconductor substrate on which a plurality of circuit elements including a bipolar transistor 2 are formed and wired as appropriate. The circuit portions 8, 4.5 extending from the base, collector, and emitter of the bipolar transistor 2 are separated, and bonding pad portions 6a, 6b, 712.
7b, 8a, and 8b are arranged in parallel and separated from each other to form a pair.

In this state, press the ing pad part 6a with a bong.

A probe is brought into contact with 7a and 8a to measure the characteristics of the transistor 2. Only for those whose characteristic values satisfy the standards,
As shown in FIG. 4, a pair of bonding pads 1. between 712 and 7b.

A metal member 9 short-circuits between 8a and 8b. Assemble the following in the usual way.

6- According to this embodiment, since the characteristics of a specific transistor 2 can be measured in the wafer or flat state, 7)
It is possible to completely prevent products with defective characteristics from being supplied to the assembly process. Therefore, not only can materials be used effectively, but costs can also be effectively reduced.

FIG. 5 shows another embodiment of the present invention, in which bonding pad portions 612-6b, 'Te1-'1b,
8a and 8b are bonded to a bonding wire 10, and the bonding wire 10 exposed from the resin material is cut after resin molding.

In the present invention, the bonding pad portion is formed in all the circuit portions extending from the transistor, but it may also be formed in only two circuit portions. Moreover, it can also be applied to a plurality of transistors.

[Brief explanation of the drawing]

Fig. 1 is an electric circuit diagram of a conventional integrated circuit device, Fig. 3 is a schematic diagram of the main part showing one implementation of the present invention, and Fig. 4 is a schematic diagram of the main part showing a state in which the bonding pad section is short-circuited. FIG. 5 is a schematic view of a main part showing another embodiment of the present invention. In the figure, 1 is a semiconductor substrate, 2 is a bipolar transistor,
8. j, 5 is the circuit part, 612, 6b, 7a, 7b, B
a and Bb are bonding pad parts, and 9.10 is a metal member. A1 Figure 3 Figure 4 Figure 5 Procedures Amendment (method) % formula %) ■, Indication of the case 1982 Patent Application No. 190219 2 Name of the invention Semiconductor device 3. Case of the person making the amendment Relationship with Patent Applicant Telephone: Otsu (0'775) 37-21007 Supplemental Contents (1) "Electrical circuit diagram," on page 7, line 19, 09, followed by "
Figure 2 is a detailed circuit diagram of the overheating guarantee circuit in Figure 1.
Insert all.

Claims (1)

[Claims] In a semiconductor substrate including a plurality of circuit elements including bipolar transistors, each of which is connected with appropriate wiring, at least two circuit parts extending from the specific bipolar transistor are separated, and a pump is provided at each end. A semiconductor device characterized in that bonding pad portions are arranged in parallel and separated from each other so as to have an electrical connection relationship, and each adjacent bonding pad portion is short-circuited after checking the characteristics of a specific bipolar transistor. .