JPS6079775A - Ohmic electrode - Google Patents
Ohmic electrodeInfo
- Publication number
- JPS6079775A JPS6079775A JP58187318A JP18731883A JPS6079775A JP S6079775 A JPS6079775 A JP S6079775A JP 58187318 A JP58187318 A JP 58187318A JP 18731883 A JP18731883 A JP 18731883A JP S6079775 A JPS6079775 A JP S6079775A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- patterns
- etched
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 8
- 229910052737 gold Inorganic materials 0.000 claims abstract description 7
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 4
- 239000010931 gold Substances 0.000 claims description 21
- 239000010936 titanium Substances 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 abstract description 8
- 239000003513 alkali Substances 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 210000001215 vagina Anatomy 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Abstract
Description
【発明の詳細な説明】 本発明は半導体素子のオーム除電極に関する。[Detailed description of the invention] The present invention relates to ohmic removal electrodes for semiconductor devices.
一般に、半導体素子は、電極付近での温度上昇による動
作特性の変化を防ぐために、熱伝導性の良いＡｕ金によ
シミ極最外部層を形成している。In general, semiconductor devices have a stain-extreme outermost layer made of Au gold, which has good thermal conductivity, in order to prevent changes in operating characteristics due to temperature rise near the electrodes.
特に、発光ダイオード、レーザーダイオードなどのよう
に注入電流密度が高く、温度上昇が著しいものではＡｕ
層を電極最外部に設けることが重要である。ところて”
’、Ａｕは半導体と反応し易いのでＡｕを半導体素子の
電極として用いる場合には、Ａｕの半導体表面への拡散
を防ぐために、防護層となる金属層を半導体とオーム性
接触のとれる金属層とＡｕ層との間に設けることが素子
の信頼性を向上させる有効である。In particular, Au
It is important that the layer be placed on the outermost part of the electrode. Tokorote”
', Au easily reacts with semiconductors, so when using Au as an electrode of a semiconductor element, in order to prevent Au from diffusing to the semiconductor surface, the metal layer that will serve as a protective layer should be replaced with a metal layer that can make ohmic contact with the semiconductor. Providing it between the Au layer and the Au layer is effective in improving the reliability of the device.
従来、この防護層用の金属としてＰｔ（白金）が知られ
ており、例えば発光ダイオード、レーザーダイオードの
ｐ側電極として１“ｉ（チタン）、Ｐｉ（白金）、Ａｕ
多層膜が高信傾オーミック°電極として知られている。Conventionally, Pt (platinum) has been known as a metal for this protective layer, and for example, 1"i (titanium), Pi (platinum), Au
The multilayer film is known as a highly reliable ohmic electrode.
ところがＰｔはエツチングが難かしく、電極のパターン
形成が困難であった。そのため”ｙＰ！、Ａｕ多層膜゛
電極では、電流注入部を制限する場合にはレジストによ
るリフトオフ法、あるいは絶縁膜を半導体表面に部分的
に形成し、次に全面ＫＴ １ 、 Ｐ ｔ 、 Ａｕ多
メノー腟を形成する方法が用いられてきた。しかし、前
者の方法ではフォトレジストによる半導体表面の汚染が
あシ、彼者の方法では絶縁膜の段差部でのＴ Ｉ 、
Ｐ ｔ 、 Ａ ｕ多層膜の切れが原因となってストレ
スによる電極の剥れなどを生じて信頼性が低下するとい
う欠点があった。However, Pt is difficult to etch, making it difficult to form electrode patterns. Therefore, in the case of the "yP!, Au multilayer film" electrode, when limiting the current injection part, a lift-off method using a resist or an insulating film is partially formed on the semiconductor surface, and then the entire surface is coated with KT 1 , P t , Au multilayer film. A method of forming an agate vagina has been used. However, in the former method, the semiconductor surface is contaminated by the photoresist, and in their method, T I at the step part of the insulating film,
There was a drawback that the reliability was lowered due to stress-induced peeling of the electrode due to the breakage of the Pt, Au multilayer film.
本発明の目的は、仁れらの欠点を除去し、パターン形成
が容易でかつ信頼性が高いオーム性電極を提供すること
にある。It is an object of the present invention to provide an ohmic electrode that eliminates the drawbacks of the above, is easy to pattern, and is highly reliable.
本発明のオーム性電極は、ｐ型半導体上にチタン（ＴＩ
）、タングステンＯＶ）および金（Ａｕ ）の各層をこ
の順に積層した多層膜構造を有することを特徴とする。The ohmic electrode of the present invention has titanium (TI) on a p-type semiconductor.
), tungsten OV), and gold (Au) in this order.
次に図面を参照して本発明の詳細な説明する。Next, the present invention will be described in detail with reference to the drawings.
第１図は本発明の一実施例の製造工程を説明する構成図
、第２図は本発明の実施例を含む半導体装置の断面図で
ある。本実施例を製造する場合、まず真空蒸着によＪ）
ｐｎ接合ウェハー１のｐ側２にＴｉ膜４及びＷＪ菖５を
堆積させ、耐アルカリ性レジストパターン６をＷ膜５上
に形成する。この耐アルカリ性レジストパターン６をマ
スクとして、Ｗ膜５とｐｔ電匝８とを電解エツチング電
極としてＫＯＨ水溶液７で交流電源９によシ数ボルトの
電圧を印加してＷ膜５を電解エツチングする。二のｖ！
屏エツチングではＷ膜５のみがエツチングされ、ｐｎ接
合ウェハー１のｐ側２はＴｉ膜４によシフ保護されｐ側
２が直接ＫＯＨ水溶液７にさらされて侵されことはない
。また、Ｗ膜５が不均一に％解エツチングされて島状に
歿ってもＴＳＳｉ２通じてＷｊＪ５の成屏エツチングし
たい部分を完全に除去することができる。虹に、Ｔｉｔ
ｌｆ％４はＷｉ＠５をマスクとして弗酸系のエツチング
液によりパターン形成ができる。FIG. 1 is a block diagram illustrating the manufacturing process of an embodiment of the present invention, and FIG. 2 is a sectional view of a semiconductor device including the embodiment of the present invention. When manufacturing this example, first J)
A Ti film 4 and a WJ iris 5 are deposited on the p side 2 of the pn junction wafer 1, and an alkali-resistant resist pattern 6 is formed on the W film 5. Using this alkali-resistant resist pattern 6 as a mask, the W film 5 is electrolytically etched by applying a voltage of several volts to the AC power supply 9 using the KOH aqueous solution 7 and the W film 5 and the PT cell 8 as electrolytic etching electrodes. Second v!
In the screen etching, only the W film 5 is etched, and the p-side 2 of the p-n junction wafer 1 is protected by the Ti film 4, so that the p-side 2 is not directly exposed to the KOH aqueous solution 7 and corroded. Further, even if the W film 5 is etched non-uniformly and becomes islands, the portion of WjJ5 to be etched can be completely removed through the TSSi2. Rainbow, Tit
lf%4 can be patterned using a hydrofluoric acid etching solution using Wi@5 as a mask.
なお、ｐｎ接合ウェハ１のｎ側３を保１ψする必要があ
るときは耐アルカリ性のレジストで保を虜すればよ（、
ＫＯＨ水溶液はＮ ａ ＯＨ水溶液でもよい。In addition, if it is necessary to protect the n side 3 of the pn junction wafer 1, use an alkali-resistant resist to protect it.
The KOH aqueous solution may be an NaOH aqueous solution.
この方法により、ＴｉＰ４Ｗ膜５のパターン形成を行な
い、第２図に示すように、Ｓｉｎ、又はＳｉ３Ｎ４など
から成る誘電体絶縁膜１１を堆積し７、パターン形成し
たｉＡｕル４１０を形成する。々お、Ａｕ膜１０とρ多
電体絶縁膜１１との接着力を強化させる為にＡｕ膜１０
と誘電体絶縁膜１１との間にＣｒ（クロム）層を設けて
もよい。By this method, the TiP4W film 5 is patterned, and as shown in FIG. 2, a dielectric insulating film 11 made of Sin or Si3N4 is deposited 7, and a patterned iAu layer 410 is formed. In order to strengthen the adhesion between the Au film 10 and the ρ multi-electric insulating film 11, the Au film 10 is
A Cr (chromium) layer may be provided between the dielectric insulating film 11 and the dielectric insulating film 11 .
本実施・し０の特徴は、従来のｐ型半−Ｊフ体の高信頼
゛醒（水であるＴｉ、Ｐｔ、Ａｕ多層膜電極ではげ１百
であったパターン形成を、Ｔ ｒ 、 Ｗ、 Ａ ｔ＋
多層膜電極を用いることによシ可能にしまたものである
。The feature of this implementation is that the pattern formation of the conventional p-type half-J half body (which was 100% unbalanced in the water Ti, Pt, Au multilayer electrode), , A t+
This is also possible by using a multilayer electrode.
このＷはｐｔと同様にＡｕに対する防護効果を持ってい
るので４６問性を損なうことケまない。更に、Ｗ膜をエ
ツチングする際半導体ウェハーを強アルカリ性のＫ ０
１Ｊ水溶液等にａずが、−極を形成する９１則はＴＩ肪
へによシ保護されているン≧め１悦１丞と半導体界面へ
半導体を侵すＫ Ｏ■１水溶液等が浸入することがない
。これは発光ダイオードやレーザーダイオードのように
ｐ側電極の信頼性が素子の信頼携を決める上で重要な場
合特に有用である。Since this W has a protective effect against Au like PT, it does not impair the 46-question nature. Furthermore, when etching the W film, the semiconductor wafer is exposed to strong alkaline K 0
The 91 rule that az forms a negative pole in a 1J aqueous solution, etc. is protected by the TI fat, and the KO1 aqueous solution, etc., which attacks the semiconductor, invades the semiconductor interface. There is no. This is particularly useful in cases such as light emitting diodes and laser diodes, where the reliability of the p-side electrode is important in determining the reliability of the device.
以上説明したように本発明によれば、ｐ型＃！−導体の
高信頼電極としてＴ ｉ 、Ｗ、Ａｕ多層膜電極を用い
ることによシ、との゛電極に任意のパターンを形成する
ことが出来る。As explained above, according to the present invention, p-type #! - By using a Ti, W, Au multilayer film electrode as a highly reliable conductor electrode, it is possible to form an arbitrary pattern on the electrode.
第１図は本発ゆ」の実施例の製造工程を示す構成図、第
２図は本発明？実施例を含む半導体装置の断面図である
。図において
１・・・・・・ｐｎ接合ウェハー、２・・山・ｐ側、３
・・・・・・ｎ側、４・・・・・・Ｔｉ膜、５・・・・
・・Ｗ膜、６・・・・・・耐アルカリ性レジストパター
ン、７・・・・・・ｋＯ）１水溶液、８°゛°°°゛Ｐ
ｔ電１迅、９・・・・・・又流゛電源、ｌＯ・・・・・
・Ａｕ膜、１１・・・°・・＋；ぢ電体絶縁膜、である
。Figure 1 is a configuration diagram showing the manufacturing process of the embodiment of the present invention, and Figure 2 is a diagram showing the manufacturing process of the embodiment of the present invention. 1 is a cross-sectional view of a semiconductor device including an example. In the figure, 1...pn junction wafer, 2...mountain/p side, 3
......n side, 4...Ti film, 5...
... W film, 6... Alkali-resistant resist pattern, 7... kO) 1 aqueous solution, 8°゛°°°゛P
t Electric power 1 speed, 9... Also, flow power, lO...
・Au film, 11...°...+; dielectric insulating film.
Claims (1)
この順に積層した多層膜構造を有することを％徴とする
オーム性電極。An ohmic electrode characterized by having a multilayer structure in which titanium, tungsten, and gold layers are laminated in this order on a p-type semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58187318A JPS6079775A (en) | 1983-10-06 | 1983-10-06 | Ohmic electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58187318A JPS6079775A (en) | 1983-10-06 | 1983-10-06 | Ohmic electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6079775A true JPS6079775A (en) | 1985-05-07 |
Family
ID=16203903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58187318A Pending JPS6079775A (en) | 1983-10-06 | 1983-10-06 | Ohmic electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6079775A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190028509A (en) * | 2016-08-01 | 2019-03-18 | 가부시키가이샤 니혼 마이크로닉스 | Secondary battery |
-
1983
- 1983-10-06 JP JP58187318A patent/JPS6079775A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190028509A (en) * | 2016-08-01 | 2019-03-18 | 가부시키가이샤 니혼 마이크로닉스 | Secondary battery |
| US10991933B2 (en) | 2016-08-01 | 2021-04-27 | Kabushiki Kaisha Nihon Micronics | Secondary battery |
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