JPH06310742A - Fabrication of photovoltaic element - Google Patents
Fabrication of photovoltaic elementInfo
- Publication number
- JPH06310742A JPH06310742A JP5101411A JP10141193A JPH06310742A JP H06310742 A JPH06310742 A JP H06310742A JP 5101411 A JP5101411 A JP 5101411A JP 10141193 A JP10141193 A JP 10141193A JP H06310742 A JPH06310742 A JP H06310742A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- photovoltaic
- pinhole
- transparent electrode
- photovoltaic element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は光起電力素子の製造方
法に関し、特にたとえば太陽電池に用いられる光起電力
素子の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a photovoltaic element, and more particularly to a method for manufacturing a photovoltaic element used in, for example, a solar cell.
【０００２】[0002]
【従来の技術】従来から光起電力素子には、安価でかつ
容易に大面積の素子を形成できる非晶質半導体薄膜が用
いられてきた。2. Description of the Related Art Conventionally, an amorphous semiconductor thin film has been used for a photovoltaic device, which is inexpensive and can easily form a large-area device.
【０００３】[0003]
【発明が解決しようとする課題】しかし、非晶質半導体
薄膜を用いた従来技術では、非晶質半導体薄膜の作成時
に、非晶質半導体薄膜に微少なピンホールが形成され、
このピンホールによって非晶質半導体薄膜の両面の表面
電極と裏面電極とが短絡しリーク電流が流れることか
ら、変換効率や歩留まりが低下するという問題点があっ
た。さらに、大面積の光起電力素子を得ようとすれば、
さらに歩留まりが悪くなっていた。However, in the prior art using the amorphous semiconductor thin film, minute pinholes are formed in the amorphous semiconductor thin film when the amorphous semiconductor thin film is formed,
Due to this pinhole, the front surface electrode and the back surface electrode on both surfaces of the amorphous semiconductor thin film are short-circuited and a leak current flows, so that there is a problem that the conversion efficiency and the yield are reduced. Furthermore, if one tries to obtain a large-area photovoltaic element,
Furthermore, the yield was getting worse.
【０００４】そこで、たとえば特開昭５８−４９８４号
公報で提案されているように、ピンホールのリーク電流
を減少させるために、溶液中で電圧を印加する技術など
があるが、絶縁コートの形成や導線の接続など手順が複
雑になってしまうという問題点があった。それゆえに、
この発明の主たる目的は、光起電力素子の変換効率およ
び歩留まりを容易に向上できる、光起電力素子の製造方
法を提供することである。Therefore, as proposed in, for example, Japanese Patent Laid-Open No. 58-4984, there is a technique of applying a voltage in a solution in order to reduce the leak current of a pinhole. There was a problem that the procedure such as connecting wires and conducting wires became complicated. Hence,
A main object of the present invention is to provide a method for manufacturing a photovoltaic element, which can easily improve the conversion efficiency and yield of the photovoltaic element.
【０００５】[0005]
【課題を解決するための手段】この発明は、基板，基板
上に配置されかつ光起電力層および光起電力層の基板側
主面と他方主面とにそれぞれ形成される第１電極と金属
を含む第２電極とを含む光起電力素子の製造方法におい
て、第２電極に含まれる金属よりイオン化傾向の高い導
体を第１電極の少なくとも一部に接触させた状態の光起
電力素子を、酸性またはアルカリ性水溶液中に所定条件
下で浸漬することによって、光起電力層のピンホール中
の第２電極を除去することを特徴とする、光起電力素子
の製造方法である。According to the present invention, there is provided a substrate, a first electrode disposed on the substrate, and a first electrode and a metal which are respectively formed on the substrate-side main surface and the other main surface of the photovoltaic layer. In the method for manufacturing a photovoltaic element including a second electrode including, a photovoltaic element in a state in which a conductor having a higher ionization tendency than a metal included in the second electrode is in contact with at least a part of the first electrode, A method of manufacturing a photovoltaic element, comprising removing the second electrode in a pinhole of the photovoltaic layer by immersing the second electrode in an acidic or alkaline aqueous solution under predetermined conditions.
【０００６】[0006]
【作用】導体を第１電極に接触させた状態で、光起電力
素子を酸性またはアルカリ性水溶液中に所定条件下で浸
漬する。すると、導体は第２電極に含まれる金属よりも
イオン化傾向が高いために、第２電極に含まれる金属よ
り優先的に溶解し、過剰な電子が蓄積される。この電子
は、第１電極中を通ってピンホール中の第２電極へ流れ
る。すると、化学電池作用によって第２電極は局所的に
腐食し、ピンホール中の第２電極は除去される。したが
って、第１電極と第２電極とがピンホールを介して短絡
することはない。The photovoltaic element is immersed in an acidic or alkaline aqueous solution under predetermined conditions with the conductor in contact with the first electrode. Then, since the conductor has a higher ionization tendency than the metal contained in the second electrode, the conductor is preferentially dissolved over the metal contained in the second electrode, and excess electrons are accumulated. The electrons flow through the first electrode to the second electrode in the pinhole. Then, the second electrode is locally corroded by the action of the chemical cell, and the second electrode in the pinhole is removed. Therefore, the first electrode and the second electrode are not short-circuited via the pinhole.
【０００７】[0007]
【発明の効果】この発明によれば、変換効率が高くかつ
歩留まりのよい光起電力素子が容易に得られる。この発
明の上述の目的，その他の目的，特徴および利点は、図
面を参照して行う以下の実施例の詳細な説明から一層明
らかとなろう。According to the present invention, a photovoltaic element having a high conversion efficiency and a high yield can be easily obtained. The above-mentioned objects, other objects, features and advantages of the present invention will become more apparent from the following detailed description of the embodiments with reference to the drawings.
【０００８】[0008]
【実施例】図８を参照して、この実施例の光起電力素子
１０の構造をまず簡単に説明する。この光起電力素子１
０は、矢印ａ方向から照射された光を電気エネルギに変
換するいわゆる逆タイプに構成される。光起電力素子１
０は、基板１２を含み、基板１２上には透光性電極１４
が形成される。透光性電極１４上の一端には導体である
金属層１６が形成され、透光性電極１４上には金属層１
６と接触するように金属反射膜１８が形成される。金属
反射膜１８上には裏面電極となる透光性電極２０が形成
され、透光性電極２０上には光起電力層２２が形成され
る。光起電力層２２はピンホール２４を有し、光起電力
層２２上には表面電極となる透光性電極２６が形成され
る。EXAMPLE The structure of the photovoltaic element 10 of this example will first be briefly described with reference to FIG. This photovoltaic element 1
0 is configured as a so-called reverse type that converts light emitted from the direction of arrow a into electric energy. Photovoltaic element 1
0 includes the substrate 12, and the transparent electrode 14 is provided on the substrate 12.
Is formed. A metal layer 16 which is a conductor is formed on one end of the transparent electrode 14, and the metal layer 1 is formed on the transparent electrode 14.
The metal reflection film 18 is formed so as to be in contact with 6. A transparent electrode 20 serving as a back electrode is formed on the metal reflective film 18, and a photovoltaic layer 22 is formed on the transparent electrode 20. The photovoltaic layer 22 has a pinhole 24, and a transparent electrode 26 serving as a surface electrode is formed on the photovoltaic layer 22.
【０００９】この実施例の光起電力素子１０は、図１か
ら図８に示す工程を経て製造される。まず、図１に示す
ように、ガラスやＳＵＳ（ステンレス）などからなる基
板１２上に、ＩＴＯ（酸化錫インジウム）やＺｎＯなど
の透明導電膜からなる透光性電極１４が形成される。次
いで、図２に示すように、透光性電極１４の周辺部に透
光性電極２６に含まれる金属よりイオン化傾向が高いＡ
ｌなどの金属層１６が形成される。またこの実施例で
は、金属層１６は透光性電極２０よりイオン化傾向が高
い。The photovoltaic element 10 of this embodiment is manufactured through the steps shown in FIGS. First, as shown in FIG. 1, a transparent electrode 14 made of a transparent conductive film such as ITO (indium tin oxide) or ZnO is formed on a substrate 12 made of glass or SUS (stainless steel). Next, as shown in FIG. 2, in the peripheral portion of the transparent electrode 14, the ionization tendency A higher than that of the metal contained in the transparent electrode 26
A metal layer 16 such as 1 is formed. Also, in this embodiment, the metal layer 16 has a higher ionization tendency than the translucent electrode 20.
【００１０】次いで、図３に示すように、透光性電極１
４上に、金属層１６と接触するように金属反射膜１８が
形成される。金属反射膜１８は、光を反射するフォトリ
フレクタとして機能するため、光の反射率の高い銀，チ
タン，Ａｌなどが用いられる。なお、金属層１６は、金
属反射膜１８と接続されるならば、いかなる位置に形成
されてもよい。そして、図４に示すように、金属反射膜
１８上に、たとえばＩＴＯやＺｎＯなどの透明導電膜か
らなる透光性電極２０が形成される。このように、金属
反射膜１８を透光性電極１４および２０で挟むことによ
って、この３層と基板１２や光起電力層２２との接着性
が良くなる。なお、基板１２にＳＵＳを用いる場合に
は、基板１２上に金属反射膜１８を直接形成し、さらに
その上に透光性電極２０を形成する２層構造としてもよ
い。また、隣接する部材との接着性が良くかつ電極およ
び反射板としての役割を果たせるならば、金属反射膜１
８を単層で基板１２上に形成してもよい。Next, as shown in FIG. 3, the transparent electrode 1
A metal reflection film 18 is formed on the metal layer 4 so as to be in contact with the metal layer 16. Since the metal reflection film 18 functions as a photo reflector that reflects light, silver, titanium, Al, or the like having a high light reflectance is used. The metal layer 16 may be formed at any position as long as it is connected to the metal reflection film 18. Then, as shown in FIG. 4, a transparent electrode 20 made of a transparent conductive film such as ITO or ZnO is formed on the metal reflective film 18. By sandwiching the metal reflective film 18 between the translucent electrodes 14 and 20 in this manner, the adhesion between these three layers and the substrate 12 or the photovoltaic layer 22 is improved. When the substrate 12 is made of SUS, the metal reflective film 18 may be directly formed on the substrate 12, and the translucent electrode 20 may be formed on the metal reflective film 18 to form a two-layer structure. In addition, the metal reflective film 1 may be used if it has good adhesiveness with an adjacent member and can serve as an electrode and a reflector.
8 may be formed as a single layer on the substrate 12.
【００１１】次いで、図５に示すように、透光性電極２
０上に、たとえばプラズマＣＶＤ法などによって非晶質
Ｓｉなどの非晶質半導体薄膜からなる光起電力層２２が
形成される。このとき、光起電力層２２にはピンホール
２４が形成されてしまう。そして、図６に示すように、
光起電力層２２上に、たとえばＩＴＯやＺｎＯなどの透
明導電膜からなる透光性電極２６が形成される。このと
き、ピンホール２４中に透光性電極２６が入り込み、透
光性電極２０と２６とは短絡してしまう。そこで、この
発明の特徴となる図７の工程を行う。Next, as shown in FIG. 5, the transparent electrode 2
A photovoltaic layer 22 made of an amorphous semiconductor thin film such as amorphous Si is formed on the substrate 0 by plasma CVD or the like. At this time, the pinhole 24 is formed in the photovoltaic layer 22. Then, as shown in FIG.
A transparent electrode 26 made of a transparent conductive film such as ITO or ZnO is formed on the photovoltaic layer 22. At this time, the translucent electrode 26 enters the pinhole 24, and the translucent electrodes 20 and 26 are short-circuited. Therefore, the process shown in FIG. 7, which is a feature of the present invention, is performed.
【００１２】すなわち、まず、金属層１６が溶解するよ
うな酸性またはアルカリ性の水溶液２８を準備する。水
溶液２８には、たとえば２０％塩酸水溶液，２０％硫酸
水溶液および１０％水酸化ナトリウム水溶液，１０％水
酸化アンモニウム水溶液や硝酸水溶液などが用いられ
る。このような水溶液２８中に、図６の状態の光起電力
素子３０を、ピンホール２４中に形成された透光性電極
２６が溶解するまでの時間（２〜１８０秒）、暗中、室
温で浸漬する。すると、水溶液２８中では、金属層１６
が透光性電極２６よりもイオン化傾向が高いために、金
属層１６が優先的に溶解し、過剰な電子が蓄積される。
この電子は、金属反射膜１８および透光性電極２０を通
って移動するが、暗中では光起電力層２２中を流れるこ
とができず、光起電力層２２が形成されていないすなわ
ちピンホール２４を優先的に通って透光性電極２６へ流
れ、化学電池作用によって透光性電極２６が局所的に腐
食する。この透光性電極２６の局所的な腐食によって、
ピンホール２４中の透光性電極２６が除去されるので、
ピンホール２４を介して透光性電極２０と２６とが短絡
するのを防ぐことができる。このとき、ピンホール２４
付近の透光性電極２０も除去される。その後、その光起
電力素子を、純水の流水中で５分以上洗浄すると、図８
に示すような光起電力素子１０が得られる。That is, first, an acidic or alkaline aqueous solution 28 in which the metal layer 16 is dissolved is prepared. As the aqueous solution 28, for example, a 20% hydrochloric acid aqueous solution, a 20% sulfuric acid aqueous solution, a 10% sodium hydroxide aqueous solution, a 10% ammonium hydroxide aqueous solution, a nitric acid aqueous solution, or the like is used. The photovoltaic element 30 in the state of FIG. 6 is dissolved in such an aqueous solution 28 for a period of time until the transparent electrode 26 formed in the pinhole 24 is dissolved (2 to 180 seconds), in the dark and at room temperature. Soak. Then, in the aqueous solution 28, the metal layer 16
However, since the ionization tendency is higher than that of the translucent electrode 26, the metal layer 16 is preferentially dissolved and excess electrons are accumulated.
The electrons move through the metal reflection film 18 and the transparent electrode 20, but cannot flow in the photovoltaic layer 22 in the dark, and the photovoltaic layer 22 is not formed, that is, the pinhole 24. Flow preferentially to the transparent electrode 26, and the transparent electrode 26 is locally corroded by the action of the chemical cell. Due to the local corrosion of the translucent electrode 26,
Since the transparent electrode 26 in the pinhole 24 is removed,
It is possible to prevent the translucent electrodes 20 and 26 from being short-circuited via the pinhole 24. At this time, the pinhole 24
The transparent electrode 20 in the vicinity is also removed. After that, when the photovoltaic element is washed in running pure water for 5 minutes or more,
The photovoltaic element 10 as shown in is obtained.
【００１３】図９に、このようにして得られた「処理あ
り」の光起電力素子１０と、水溶液２８中に浸漬しその
後洗浄するという処理を経ないで得られた「処理なし」
の光起電力素子とのそれぞれ電流−電圧特性の一例を示
す。この「処理なし」の光起電力素子は、上述の浸漬・
洗浄という処理の有無以外は、「処理あり」の場合と同
一の形成条件で形成されている。一般に、光起電力素子
ではリーク電流が小さいほど曲線因子が増大し、変換効
率が大きいものとなる。図９に示すセルの場合、「処理
あり」の光起電力素子１０の曲線因子および変換効率は
それぞれ０．７および８．５％であるのに対し、「処理
なし」の光起電力素子の曲線因子および変換効率はそれ
ぞれ０．６および７．３％であった。このことから、浸
漬・洗浄という処理を行ったこの実施例の光起電力素子
１０では、ピンホール２４中のリーク電流が減少し、変
換効率が向上することがわかる。FIG. 9 shows the thus-obtained “with treatment” photovoltaic element 10 and the “without treatment” obtained without the treatment of immersing in the aqueous solution 28 and then washing.
An example of current-voltage characteristics of the photovoltaic element and the photovoltaic element of FIG. This "untreated" photovoltaic element is
It is formed under the same forming conditions as in the case of “with processing” except for the presence or absence of the processing of washing. Generally, in a photovoltaic element, the smaller the leak current, the larger the fill factor and the greater the conversion efficiency. In the case of the cell shown in FIG. 9, the fill factor and conversion efficiency of the “with treatment” photovoltaic element 10 are 0.7 and 8.5%, respectively, whereas that of the “without treatment” photovoltaic element is Fill factor and conversion efficiency were 0.6 and 7.3%, respectively. From this, it can be seen that in the photovoltaic element 10 of this example, which has been subjected to the treatment of immersion and cleaning, the leak current in the pinhole 24 is reduced and the conversion efficiency is improved.
【００１４】なお、「処理あり」の光起電力素子１０お
よび「処理なし」の光起電力素子の変換効率は、それぞ
れ数１および数２のように求められる。The conversion efficiencies of the “with treatment” photovoltaic element 10 and the “without treatment” photovoltaic element are obtained as in Equations 1 and 2, respectively.
【００１５】[0015]
【数１】 [Equation 1]
【００１６】[0016]
【数２】 [Equation 2]
【００１７】なお、表１に、「処理あり」の光起電力素
子１０および「処理なし」の光起電力素子の良品の割合
を、１cm角素子および５cm角素子のそれぞれについて示
す。ここで良品とは、曲線因子が０．５以上であるもの
を指す。この表１より、「処理あり」の光起電力素子１
０の歩留まりが「処理なし」の光起電力素子より向上し
ていることがわかる。Table 1 shows the proportions of non-defective photovoltaic elements 10 with and without treatment and non-treated photovoltaic elements with respect to 1 cm square element and 5 cm square element, respectively. Here, the non-defective product refers to one having a fill factor of 0.5 or more. From this Table 1, the photovoltaic element 1 with "treatment"
It can be seen that the yield of 0 is higher than that of the “untreated” photovoltaic element.
【００１８】[0018]
【表１】 [Table 1]
【００１９】このように、この実施例によれば、非晶質
半導体薄膜を用いる光起電力素子において、化学電池作
用を利用してピンホール２４のリペアを行うことによっ
て、レーザや別途電源を用いることなく、変換効率や歩
留まりの低下をもたらすピンホール２４を選択的かつ容
易に除去することができる。また、図１２に示す他の実
施例の光起電力素子１０は、矢印ｂ方向から照射された
光を電気エネルギに変換するいわゆる順タイプに構成さ
れる。図１２に示す光起電力素子１０では、ガラスなど
からなる基板３２上にＳｎＯ2 （酸化錫）などの透明導
電膜からなる透光性電極３４が形成される。透光性電極
３４上の一端には、Ａｌなどからなる導体である金属層
３６が形成され、透光性電極３４上には金属層３６と接
触するように非晶質半導体薄膜からなる光起電力層３８
が形成され、光起電力層３８上には、ＺｎＯ，ＩＴＯな
どの透明導電膜からなる透光性電極４０が形成される。
そして、ピンホール４２にはシリコン樹脂などの絶縁物
４４が塗布され、透光性電極４０上には銀，チタンなど
の金属反射膜４６が形成される。ここで、透光性電極３
４は表面電極となり、透光性電極４０は裏面電極とな
る。As described above, according to this embodiment, in the photovoltaic device using the amorphous semiconductor thin film, the laser and the separate power source are used by repairing the pinhole 24 by utilizing the chemical cell action. It is possible to selectively and easily remove the pinholes 24 that cause a reduction in conversion efficiency and yield without using the pinholes 24. In addition, the photovoltaic element 10 of another embodiment shown in FIG. 12 is configured as a so-called forward type that converts light emitted from the direction of arrow b into electric energy. In the photovoltaic element 10 shown in FIG. 12, a transparent electrode 34 made of a transparent conductive film such as SnO 2 (tin oxide) is formed on a substrate 32 made of glass or the like. A metal layer 36, which is a conductor made of Al or the like, is formed on one end of the transparent electrode 34, and a photovoltaic layer made of an amorphous semiconductor thin film is formed on the transparent electrode 34 so as to be in contact with the metal layer 36. Power layer 38
And a transparent electrode 40 made of a transparent conductive film such as ZnO or ITO is formed on the photovoltaic layer 38.
Then, an insulator 44 such as silicon resin is applied to the pinhole 42, and a metal reflection film 46 such as silver or titanium is formed on the translucent electrode 40. Here, the transparent electrode 3
4 is a front surface electrode, and the translucent electrode 40 is a back surface electrode.
【００２０】この光起電力素子１０は、図８に示す光起
電力素子１０と同様の工程を経て形成される。そして、
図１０に示す状態まで形成されると、先の実施例と同様
に図１１に示す水溶液２８中に浸漬され、処理される。
すると、ピンホール４２中に入り込んだ透光性電極４０
およびピンホール４２付近の透光性電極３４が除去され
る。順タイプの光起電力素子１０では、透光性電極４０
上の全面に金属反射膜４６が形成されるため、透光性電
極４０が除去されたピンホール４２において金属反射膜
４６と透光性電極３４とが短絡しないように、金属反射
膜４６と透光性電極３４とを絶縁しておかなければなら
ない。したがって、ピンホール４２に金属反射膜４６が
入らないように、ピンホール４２には絶縁物４４が塗布
され、絶縁化が図られる。なお、ピンホール４２は小さ
くても、透光性電極４０はピンホール４２より広めに除
去されるので、その除去された部分を視認することがで
きる。また、透光性電極４０と光起電力層３８とは屈折
率が異なるため、透光性電極４０が除去されたピンホー
ル４２と透光性電極４０が形成されている個所とは色が
異なる。このことからも、ピンホール４２を視認でき
る。したがって、ピンホール４２に対してスポット的に
絶縁物４４を塗布することができる。This photovoltaic element 10 is formed through the same steps as the photovoltaic element 10 shown in FIG. And
After being formed to the state shown in FIG. 10, it is immersed in the aqueous solution 28 shown in FIG. 11 and treated in the same manner as in the previous embodiment.
Then, the translucent electrode 40 that has entered the pinhole 42.
The transparent electrode 34 near the pinhole 42 is removed. In the forward type photovoltaic element 10, the transparent electrode 40
Since the metal reflective film 46 is formed on the entire upper surface, the metal reflective film 46 and the translucent electrode 34 and the translucent electrode 34 are not short-circuited in the pinhole 42 where the translucent electrode 40 is removed. It must be insulated from the photoelectrode 34. Therefore, the insulating material 44 is applied to the pinhole 42 so that the metal reflection film 46 does not enter the pinhole 42, and insulation is achieved. Even if the pinhole 42 is small, the transparent electrode 40 is removed wider than the pinhole 42, so that the removed portion can be visually recognized. Further, since the translucent electrode 40 and the photovoltaic layer 38 have different refractive indices, the pinhole 42 from which the translucent electrode 40 is removed and the portion where the translucent electrode 40 is formed have different colors. . Also from this, the pinhole 42 can be visually recognized. Therefore, the insulator 44 can be applied spotwise to the pinhole 42.
【００２１】このような順タイプの光起電力素子１０に
おいても、上述した逆タイプの光起電力素子１０と同様
の効果が得られる。また、透光性電極２６および４０を
それぞれ光起電力層２２および３８上に形成することに
よって、水溶液２８中に浸漬した際に、光起電力層２２
および３８がダメージを受けるのを防ぐことができる。Also in such a forward type photovoltaic element 10, the same effect as the above-mentioned reverse type photovoltaic element 10 can be obtained. Further, by forming the translucent electrodes 26 and 40 on the photovoltaic layers 22 and 38, respectively, the photovoltaic layer 22 when immersed in the aqueous solution 28.
And 38 can be prevented from being damaged.
【図１】基板上に透光性電極が形成された状態を示す断
面図である。FIG. 1 is a cross-sectional view showing a state in which a translucent electrode is formed on a substrate.
【図２】透光性電極の周辺部にＡｌなどからなる金属層
が形成された状態を示す断面図である。FIG. 2 is a cross-sectional view showing a state in which a metal layer made of Al or the like is formed around the translucent electrode.
【図３】透光性電極上に金属反射膜が形成された状態を
示す断面図である。FIG. 3 is a cross-sectional view showing a state in which a metal reflective film is formed on a translucent electrode.
【図４】金属反射膜上に透光性電極が形成された状態を
示す断面図である。FIG. 4 is a cross-sectional view showing a state in which a translucent electrode is formed on a metal reflective film.
【図５】透光性電極上に光起電力層が形成された状態を
示す断面図である。FIG. 5 is a cross-sectional view showing a state in which a photovoltaic layer is formed on a translucent electrode.
【図６】光起電力層上に透光性電極が形成された状態を
示す断面図である。FIG. 6 is a cross-sectional view showing a state in which a translucent electrode is formed on the photovoltaic layer.
【図７】図６の状態の光起電力素子が水溶液に浸漬され
た状態を示す断面図である。FIG. 7 is a cross-sectional view showing a state where the photovoltaic element in the state of FIG. 6 is immersed in an aqueous solution.
【図８】この実施例の逆タイプの光起電力素子を示す断
面図である。FIG. 8 is a cross-sectional view showing a photovoltaic element of the reverse type of this embodiment.
【図９】この実施例の「処理あり」の光起電力素子およ
び「処理なし」の光起電力素子のそれぞれの電流−電圧
特性の一例を示すグラフである。FIG. 9 is a graph showing an example of current-voltage characteristics of a photovoltaic element with “treatment” and a photovoltaic element with “no treatment” of this example.
【図１０】図６に相当し、光起電力層上に透光性電極が
形成された状態を示す断面図である。10 is a cross-sectional view corresponding to FIG. 6 and showing a state in which a transparent electrode is formed on the photovoltaic layer.
【図１１】図１０の状態の光起電力素子が水溶液に浸漬
された状態を示す断面図である。11 is a cross-sectional view showing a state where the photovoltaic element in the state of FIG. 10 is immersed in an aqueous solution.
【図１２】この実施例の順タイプ型の光起電力素子を示
す断面図である。FIG. 12 is a cross-sectional view showing a forward type photovoltaic element of this example.
１０，３０ …光起電力素子 １２，３２ …基板 １４，２０，２６，３４，４０ …透光性電極 １６，３６ …金属層 １８，４６ …金属反射膜 ２２，３８ …光起電力層 ２４，４２ …ピンホール ２８ …水溶液 ４４ …絶縁物 10, 30 ... Photovoltaic element 12, 32 ... Substrate 14, 20, 26, 34, 40 ... Translucent electrode 16, 36 ... Metal layer 18, 46 ... Metal reflective film 22, 38 ... Photovoltaic layer 24, 42 ... Pinhole 28 ... Aqueous solution 44 ... Insulator
Claims (1)
層および前記光起電力層の前記基板側主面と他方主面と
にそれぞれ形成される第１電極と金属を含む第２電極と
を含む光起電力素子の製造方法において、 前記第２電極に含まれる前記金属よりイオン化傾向の高
い導体を前記第１電極の少なくとも一部に接触させた状
態の前記光起電力素子を、酸性またはアルカリ性水溶液
中に所定条件下で浸漬することによって、前記光起電力
層のピンホール中の前記第２電極を除去することを特徴
とする、光起電力素子の製造方法。1. A substrate, a first electrode disposed on the substrate and formed on the substrate-side main surface and the other main surface of the photovoltaic layer and the photovoltaic layer, and a second electrode containing a metal. In the method for manufacturing a photovoltaic element, including: the photovoltaic element in a state in which a conductor having a higher ionization tendency than the metal contained in the second electrode is in contact with at least a part of the first electrode; Alternatively, the second electrode in the pinhole of the photovoltaic layer is removed by immersing the second electrode in an alkaline aqueous solution under a predetermined condition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5101411A JPH06310742A (en) | 1993-04-27 | 1993-04-27 | Fabrication of photovoltaic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5101411A JPH06310742A (en) | 1993-04-27 | 1993-04-27 | Fabrication of photovoltaic element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06310742A true JPH06310742A (en) | 1994-11-04 |
Family
ID=14299972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5101411A Withdrawn JPH06310742A (en) | 1993-04-27 | 1993-04-27 | Fabrication of photovoltaic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06310742A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003124483A (en) * | 2001-10-17 | 2003-04-25 | Toyota Motor Corp | Photovoltaic element |
| WO2010066693A1 (en) * | 2008-12-08 | 2010-06-17 | Gebr. Schmid Gmbh & Co. | Method for machining the surface of a wafer for producing a solar cell, and wafer |
| US10950391B2 (en) | 2017-09-15 | 2021-03-16 | Kabushiki Kaisha Toshiba | Photoelectric conversion device and manufacturing method and apparatus thereof |
-
1993
- 1993-04-27 JP JP5101411A patent/JPH06310742A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003124483A (en) * | 2001-10-17 | 2003-04-25 | Toyota Motor Corp | Photovoltaic element |
| WO2010066693A1 (en) * | 2008-12-08 | 2010-06-17 | Gebr. Schmid Gmbh & Co. | Method for machining the surface of a wafer for producing a solar cell, and wafer |
| CN102246323A (en) * | 2008-12-08 | 2011-11-16 | 吉布尔.施密德有限责任公司 | Method for machining the surface of a wafer for producing a solar cell, and wafer |
| US10950391B2 (en) | 2017-09-15 | 2021-03-16 | Kabushiki Kaisha Toshiba | Photoelectric conversion device and manufacturing method and apparatus thereof |
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