JPS607681A - Method for forming magnetic bubble memory - Google Patents
Method for forming magnetic bubble memoryInfo
- Publication number
- JPS607681A JPS607681A JP58114162A JP11416283A JPS607681A JP S607681 A JPS607681 A JP S607681A JP 58114162 A JP58114162 A JP 58114162A JP 11416283 A JP11416283 A JP 11416283A JP S607681 A JPS607681 A JP S607681A
- Authority
- JP
- Japan
- Prior art keywords
- film
- bubble memory
- magnetic bubble
- memory element
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Abstract
Description
【発明の詳細な説明】
発明の技術分野
本発明は電子計算装置またはその端末機等の記憶装置と
して用いられる磁気バブルメモリに関し、特に熱硬化性
樹脂を用いる磁気バブルメモリ素子の作成法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a magnetic bubble memory used as a storage device in an electronic computing device or a terminal thereof, and particularly relates to a method for producing a magnetic bubble memory element using a thermosetting resin. be.
技術の背景
磁気バブルメモリ装置は、不揮発性、高記憶密度、低消
費電力管種々の特徴をもち、さらには機械的要素を全く
含まない固体素子であることから非常に高い信頼性を有
し、大容量メモリとして将来が期待されている。Background of the Technology Magnetic bubble memory devices have various features such as non-volatility, high storage density, and low power consumption.Furthermore, because they are solid-state devices that do not contain any mechanical elements, they have extremely high reliability. It is expected to have a promising future as a large capacity memory.
この磁気バブルメモリは、例えば結晶のＣ軸方向にのみ
磁化容易軸を有する一軸異方性なもったオルソフェライ
トや、磁性ガーネット等の単結晶薄膜上にパーマロイに
よる多数の薄膜微細パターンを形成しておき、膜面に垂
直なバイアス磁界を加えたときに生ずる円筒磁区（これ
をバブルという）を外部回転磁界によりパーマロイパタ
ーンヲ転送路として移動させ、このパーマロイパターン
におけるバブルの有無を１”、Ｄ″に対応させて情報記
憶させメモリとして使用するものである。This magnetic bubble memory is made by forming a large number of thin film fine patterns using permalloy on a single crystal thin film such as uniaxially anisotropic orthoferrite having an easy axis of magnetization only in the C-axis direction of the crystal, or magnetic garnet. Then, when a bias magnetic field perpendicular to the film surface is applied, the cylindrical magnetic domain (called a bubble) is moved through the permalloy pattern as a transfer path by an external rotating magnetic field, and the presence or absence of bubbles in this permalloy pattern is determined by 1", D" It is used as a memory to store information corresponding to the information.
従来技術と問題点
第１図は従来の磁気バブルメモリ素子の構成を説明する
ための図である。同図において、１はガリウム・ガドリ
ニウム・ガーネット基板、２はその上に液相エピタキシ
ャル成長法により形成された磁性薄膜、３はその上に形
成された５ｉ０２のスペーサ、４はＡｔ−０ｕを用いた
ゲート類駆動用導体パターン、５は導体による段差を平
坦化する樹脂を用いた絶縁膜、６はパーマロイパターン
、７は樹脂を用いた保護膜をそれぞれ示す。Prior Art and Problems FIG. 1 is a diagram for explaining the structure of a conventional magnetic bubble memory device. In the figure, 1 is a gallium-gadolinium-garnet substrate, 2 is a magnetic thin film formed thereon by liquid phase epitaxial growth, 3 is a 5i02 spacer formed thereon, and 4 is a gate using At-0u. Reference numeral 5 indicates a conductor pattern for driving, reference numeral 5 indicates an insulating film made of resin to flatten steps caused by the conductor, reference numeral 6 indicates a permalloy pattern, and reference numeral 7 indicates a protective film made of resin.
従来このような磁気バブルメモリ素子の作成工程におい
て樹脂の硬化は大気中又は窒素雰囲気中で行なわれてき
た。ところが前者の場合、樹脂の種類によっては酸素と
の反応による樹脂の変質・分解が起こり、さらに樹脂は
ポーラスなため、下地の金属膜の酸化が起ったりする。Conventionally, in the manufacturing process of such magnetic bubble memory elements, resin curing has been carried out in the air or in a nitrogen atmosphere. However, in the former case, depending on the type of resin, the resin may undergo deterioration or decomposition due to reaction with oxygen, and since the resin is porous, the underlying metal film may be oxidized.
後者の場合でも金属の種類によっては酸化され、例えば
パーマロイ（Ｎｉ−Ｆｅ合金）ではＦ８が酸化され、そ
の結果抵磁力Ｈ８が増加し磁気バブルメモリとしての特
性に悪影響を及ぼすという問題があった。Even in the latter case, depending on the type of metal, F8 is oxidized, for example, in permalloy (Ni-Fe alloy), and as a result, the magnetic resistance H8 increases, which has a negative effect on the characteristics of the magnetic bubble memory.
発明の目的
本発明は樹脂硬化時にパーマロイパターンに生ずる特性
の劣化を防止した磁気バブルメモリ素子の作成法を提供
することを目的とするものである。OBJECTS OF THE INVENTION It is an object of the present invention to provide a method for producing a magnetic bubble memory element that prevents deterioration of characteristics of a permalloy pattern during resin curing.
発明の構成
そしてこの目的は本発明によれば、熱硬化性樹脂を用い
た磁気バブルメモリ素子において、樹脂の硬化を真空中
で行なうことを特徴とする磁気バブルメモリ素子の作成
法を提供することによって達成される。SUMMARY OF THE INVENTION According to the present invention, it is an object of the present invention to provide a method for producing a magnetic bubble memory element using a thermosetting resin, characterized in that the resin is cured in a vacuum. achieved by.
発明の実施例 以下、本発明実施例を図面によって詳述する。Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.
実施例として、第１図の如く基板１の上に磁性薄膜２．
５１ｏ２のスペーサ６、導体パターン４を形成後、絶縁
膜５としてＰｂＯ２（ポリ・ラダー・オルガノ・シロキ
サン）樹脂を塗布硬化したのち、パーマロイ薄膜による
パターン６を形成し、その上に保護膜７としてＰＯＬＳ
樹脂を塗布し、その硬化は本発明による真空中での加熱
を行なったものである。As an example, as shown in FIG. 1, a magnetic thin film 2.
After forming a 51o2 spacer 6 and a conductor pattern 4, a PbO2 (poly ladder organo siloxane) resin is applied and cured as an insulating film 5, and then a permalloy thin film pattern 6 is formed, and a protective film 7 of POLS is formed on it.
A resin is applied and cured by heating in a vacuum according to the present invention.
第２図はこのように本発明方法により作成された磁気バ
ブルメモリ素子におけるパーマロイパターンの抗磁力Ｈ
ａを従来法により作成されたものと比較して試験した結
果である。図中、白丸印は本発明法によるもの、黒丸印
は従来法の窒素雰囲気中で加熱硬化したものである。図
に示すようにパーマロイパターンの抗磁力Ｈｃは１００
程度であるが、保護膜としての樹脂を塗布し従来法によ
る窒素雰囲気での熱硬化を行なったものは８〜９００程
度に悪化する。これに対し本発明方法によるものは殆ん
ど変化がない。Figure 2 shows the coercive force H of the permalloy pattern in the magnetic bubble memory element produced by the method of the present invention.
These are the results of testing in comparison with those prepared by a conventional method. In the figure, white circles are those obtained by the method of the present invention, and black circles are those obtained by heating and curing in a nitrogen atmosphere using the conventional method. As shown in the figure, the coercive force Hc of the permalloy pattern is 100
However, it deteriorates to about 8 to 900 when a resin is applied as a protective film and heat-cured in a nitrogen atmosphere by a conventional method. On the other hand, there is almost no change in the method according to the present invention.
発明の効果
以上、詳細に説明したように本発明による磁気バブルメ
モリ素子の作成方法は、樹脂の硬化を真空中で行なうこ
とにより、特性劣化を防止し得るといった効果大なるも
のである。Effects of the Invention As described above in detail, the method for producing a magnetic bubble memory element according to the present invention has a great effect in that property deterioration can be prevented by curing the resin in a vacuum.
第１図は磁気バブルメモリ素子の構成を説明するための
図、第２図は樹脂硬化法の違いによるパーマロイの抗磁
力ＨＯ変化の試験結果を示した図である。
図面において、１は基板、２は磁性薄膜、６はスペーサ
、４は導体パターン、５は樹脂絶縁膜、６はパーマロイ
パターン、７は樹脂保護膜をそれぞれ示す。FIG. 1 is a diagram for explaining the structure of a magnetic bubble memory element, and FIG. 2 is a diagram showing test results of changes in coercive force HO of permalloy due to different resin curing methods. In the drawings, 1 is a substrate, 2 is a magnetic thin film, 6 is a spacer, 4 is a conductor pattern, 5 is a resin insulating film, 6 is a permalloy pattern, and 7 is a resin protective film.
Claims (1)
いて、樹脂の硬化を真空中で行なうことを特徴とする磁
気バブルメモリ素子の作成法。 ２、前記熱硬化性樹脂分保護膜に用いることを特徴とす
る特許請求の範囲第１項記載の磁気バブルメモリ素子の
作成法。[Claims] 1. A method for producing a magnetic bubble memory element using a thermosetting resin, characterized in that the resin is cured in a vacuum. 2. The method for producing a magnetic bubble memory element according to claim 1, wherein the thermosetting resin is used as the protective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58114162A JPS607681A (en) | 1983-06-27 | 1983-06-27 | Method for forming magnetic bubble memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58114162A JPS607681A (en) | 1983-06-27 | 1983-06-27 | Method for forming magnetic bubble memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS607681A true JPS607681A (en) | 1985-01-16 |
Family
ID=14630710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58114162A Pending JPS607681A (en) | 1983-06-27 | 1983-06-27 | Method for forming magnetic bubble memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS607681A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11073346B2 (en) * | 2018-03-01 | 2021-07-27 | Cnh Industrial America Llc | Hydraulic cooler assembly for a header of an agricultural harvester |
-
1983
- 1983-06-27 JP JP58114162A patent/JPS607681A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11073346B2 (en) * | 2018-03-01 | 2021-07-27 | Cnh Industrial America Llc | Hydraulic cooler assembly for a header of an agricultural harvester |
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