JPS6074430A - Photo-chemical vapor growth film apparatus - Google Patents

Abstract

PURPOSE:To increase a number of substrates to be processed at a time without expansion of structure by providing a light source which emits the light having excellent rectilinear propagation characteristic and convergence and also providing light shaping means. CONSTITUTION:A first cylindrical body 10 having the one opening end is provided with a reaction gas guiding port 11 at the other end and the reaction gas exhausting port 12 at the opening end part of side wall. A second cylindrical body 13 has the one opening end, the opening end part is removably affixed to the opening end part of cylindrical body 10 and is provided an inactive gas guiding port 14. A light source which emits the light having the excellent rectilinear propagation characteristic and convergence in the vertical direction to the plane of substrate 2 is provided within the light source chamber 17. An exciting light emitted from the light source 19 has a large diameter owing to a beam expander 20 and is shaped so that it is directed to the surrounding of substrate 2 by the light shaping means 21. The light passes through a light transmitting body 15a and enters the reaction chamber 16 covering the surrounding of the substrate 2.

Description

Detailed Description of the Invention [Technical Field of the Invention 1 6.] A semiconductor film (Si single crystal film, etc.), insulating film (Si02 film, Si3N4 film, Al2O
3 film, etc.), a method of depositing a metal film (Ae film, etc.), etc. (
Photochemical vapor deposition method (hereinafter referred to as photochemical CVD)
chemical va, par position
This invention relates to a photochemical vapor deposition apparatus using a method called 0).

[Prior Art j] As a photochemical vapor deposition apparatus using such photochemical CVD, the one shown in FIG. 1 is known.

Figure 1 ((1) has a flat board at the bottom (2)
is placed on the reaction γ, and the reaction gas is introduced at one end D (3)
and a reactant gas u1 outlet (4) at the other end, and an entrance window (5) at the upper part, that is, at a position facing the plane (2d) of the substrate (2).(6
) is a light transmitting plate made of a material that transmits the light that blocks the entrance window (5) of this reaction chamber (1), and (7) is a lamp that is disposed opposite to this light transmitting plate and irradiates excitation light. .

In the photochemical vapor deposition apparatus configured in this way, K for depositing a desired film on the flat surface (2a) of the substrate (2) is as follows:
A reaction gas corresponding to this desired film is introduced into the reaction gas inlet (3).
into the reaction chamber (1). On the other hand, excitation light from the light source (7) passes through the light transmission window (6) and enters the reaction chamber (1). At this time, the reaction gas introduced into the reaction chamber (1) is photochemically decomposed by the excitation light, and molecular species or radical species that contribute to deposition are deposited on the flat surface (2a) of the substrate (2). It becomes seven. Note that the reaction gas in the reaction chamber (1), excluding the gas that contributed to the deposition, is discharged through the reaction gas outlet (
4), and the reactive gas is discharged from the substrate (2).
The flow is parallel to the plane 1lfII (2a) of .

However, in this way, the reaction gas is transferred to the substrate (2) and the plane (2a).
), and the excitation light is directed to the plane (2a) of the substrate (2).
In the case where f1G is emitted from above, the number of substrates (2) that can be processed in one cycle is small, and if you try to increase the number of substrates processed, the number of substrates (1) that can be processed in one cycle is small. It is necessary to increase the size of the reaction chamber (1), and with the enlargement of the total size of the reaction chamber (1), [Summary of Emission 1] This EJJ was made in view of the above problems, and it is necessary to improve the straightness and convergence. A light source that emits excellent light is placed at a position opposite to the plane of the substrate, and a light sound from the light source is incident between the substrate and the optical Z thread, and this incident light is transmitted to the substrate at the same gate of the substrate. By arranging the light shaping means that emit light in the direction perpendicular to the plane of This paper proposes a photochemical vapor deposition system.

Example of 1 shot 1 J Figure 2 (d This is an example of IX!Ll).
1 m cup, with a reactive gas inlet (11,) at the side end, and a reactive gas outlet (12) at the open end of the side wall.
It is something that you do yourself. (13) has a cylindrical shape with one end open, and the open end is the open end i of the first cylinder (10).
A second cylindrical body that is removably fixed in the fB, ll1l
A step part (13a) is formed on the inner wall of the opening side end of the first wall, and an inert gas inlet (14) is formed between this first part and the enclosure 17. (15) is an annular light transmitting body (], 5a) fixed to the step (13a) of the second cylindrical body (13).L is a glock (15b) that closes the medium heat opening of this light transmitting body (15a). This is a partition body that partitions the first cylinder A4S10) side as a counter-kb chamber (16) and the second cylinder (13) side as a light source chamber (17).

Incidentally, the reaction chamber main body is constituted by the first cylindrical body (1o) and the second cylindrical body (13) and the qJ plate (15). (18) is a support stand disposed in the opposite R5 chamber (16) between the reaction gas inlet (11) and the reaction gas H1: outlet (12), on which a number of substrates (2) are supported. They are vertically supported in parallel at equal intervals. (19) is the board (2)
It is arranged in a light source chamber (17) located on the central axis of the first cylindrical body (1o), facing the plane of the substrate (1o), and emits light with excellent linearity and convergence to the substrate ( 2) is a light source that emits light in a direction perpendicular to the plane, and is, for example, a laser light source that emits a Retz' beam. (2o) is 1 light source room (17)
is arranged between this light source and the partition 17I plate (15), and the light (AI) from the light source (19) is incident, and the light (A
I) It is a beam egispasig that emits a larger diameter Q light (A2), and is composed of a concave lens (20a convex lens (2 (month)) and +14. Closed room (1
7) (This beam in public x Kiss Hunter (20)
G1. s+j (l: IjJ I/i (15)
1, and the beam f kiss basig (2(+)
Karano light (A2) is shining for a long time, this light (A2) is E
, l'1j-7 Bitsu no 1. ′ → Transmit body (15a)”=, 1 of 1 substrate (2) “゛1 River 9: 12fl
VC white is ゛I in the direction perpendicular to the plane of the board (2)
The conical surface is a reflective surface (22 Ja 'x), and the reflective surface (22
εl), the incident light (A2) is directed perpendicularly to the -1F plane of the substrate (2), and the light (A3) is bound to Py-fI]- The eleventh projection mirror (22) and the J-shaped projection surface (22) of this first J-s projection surface (22)
2 + 1) and i:':j 6. The above light (A
3) in the direction of the corner, Jl t'+l), :'i'
Light in a direction perpendicular to b of L plate (2) (A4)
It is composed of a second reflecting mirror (23) that reflects the light with a
) center rli + I + ri light source (1 (rigara no light (A
The optical axis of I), the concave lens (2 (la)) and the convex L/lens (2 (la)
0b). (24) A low-temperature heating furnace disposed around the outer periphery of the side wall of the first cylindrical body (10), for improving the quality of the film deposited on the half surface of the base and (2) and assisting in the chemical reaction. It is. Note that the above-mentioned Exno Young (20) is not particularly necessary.

In the photochemical vapor deposition apparatus configured in this way, the process of depositing a desired film on the plane of the substrate (2) is to first place a plurality of substrates (2) in parallel at equal intervals on the support stand (18). In this state, it is placed inside the first cylindrical body (10) and the second cylindrical body (
13) is fixed to the first cylinder (10). Then, inject the reaction gas corresponding to the desired membrane described in 1 into the reaction gas inlet (] 1).
into the reaction chamber (16). At this time, the reaction chamber (1
6) The reactant gas that was 7σ inside the reactant gas exhaust 1"" mouth (
12) to the outside of the reaction chamber (16), the reaction gas is discharged around the substrate (2) in the reaction chamber (16).
2), which flows approximately perpendicularly to the plane of FIG. 2, from right to left in FIG. On the other hand, the excitation light from the light source (19) is enlarged in diameter by a beam expanding unit (20), and is shaped by a beam shaping means (extending unit) so that the excitation light goes in the same direction of the substrate (2). The anti-f'lz chamber (16
). The excitation light from the light source (19) entered into this reaction chamber (16) is applied to one of the substrates (2).
A photochemical fraction of the reaction gas introduced into the reaction chamber (1li) is generated to generate molecular species or radical species that contribute to the deposition. This molecular species or radical species circulates and diffuses from the outer periphery of the substrate (2) to the center, and is deposited on the flat curved surface of the substrate (2), forming a single layer on the flat surface of the substrate (2). It is something that becomes. This station, reaction chamber (
16) Supply of anti-bf6% body into ITI and reaction chamber (1
6) By appropriately adjusting the pressure inside the substrate (2)
The surface example is diffused in a rate-limiting state and formed on the substrate (2).
．． The thickness of the film formed is uniform and varies.

Therefore, in this example, the group 47< (2
) Around this substrate (2), excitation light with excellent 11-progressivity and convergence is incident in the vertical direction.
3j, it is possible to process a large number of & plates (2) at once without having to make the device itself too large.

Furthermore, in this embodiment, for the reason described below, the film thickness of each of the plurality of substrates (2) is set to be the same i′1
．． However, the entire photochemical reaction takes place in the reactant gas - only one light is absorbed by the reaction nail, and it is very small.
According to the 33eer's law (#f1, if the absorption coefficient is constant, the intensity decreases exponentially as light travels straight through the medium; It is known that under normal deposition conditions, the deposition rate increases monotonically with respect to the light intensity.

In the embodiments described above, the reactive gas is the substrate (2
) around the reactant gas introduced (ko(l)) to the reactant gas #
j: Flows toward the outlet (12), and there are many unreacted molecules on the reaction gas inlet (11) side, and the reaction gas is discharged 1.
(12) It decreases gradually towards f7ic, and one auxiliary light from the light source (one) is from the substrate (2).
around the reactant gas outlet (12) to the reactant gas inlet (11), and the reactant gas first outlet (12).
) side, the excitation light intensity is strong and gradually becomes weaker toward the reaction gas inlet (11). One size,
On the reaction gas inlet (11) side, although there are many unreacted molecules in the reactant, the excitation light intensity is weak, and the anti-J・S gas outlet (
On the 12) side, the number of unreacted molecules in the reaction gas is small, and the excitation light intensity is stronger, so as can be seen from the above-mentioned friction, etc., the number of unreacted molecules in the reaction gas is small. ) to each of the plurality of substrates (2) located at the initial outlet (12) of the reaction gas can be almost eliminated, and the thickness of each film on the substrates (2) can be almost completely eliminated. It can be formed by turning.

In addition, an inert gas that does not absorb excitation light and does not affect the deposition reaction from the smell-C-1 of this example, the inert gas that does not absorb the excitation light and does not affect the deposition reaction, was added to the reaction chamber (Hi). Since the inert gas is introduced into the reaction chamber (1
This prevents the reaction gas in 6) from coming into contact with the light transmitting body (15, 1). As a result, a transparent 1Mi body (12)
This does not prevent the supply of excitation energy of light from the light source (1(υ).

In addition, in Example 1, the pre-deposited laser beam was used from the light source (19), but it is also possible to use light in the so-called vacuum ultraviolet region with a wavelength of 2000λ or less, and in this case, nitrogen , the light source chamber (1
7) It is necessary to replace the inside.

(Effect of origin)] As described above, the present invention is characterized in that a plurality of flat substrates are housed in parallel, and the inside is an atmosphere of reaction gas that is formed on the film formed on one side of the substrate. a reaction chamber main body which is to be used as
1i K was arranged, light from a light source was incident thereon, and light shaping means was provided between the substrates to emit the incident light as light in a direction perpendicular to the plane of the substrate. Therefore, it has the effect that dogs can get.

[Brief explanation of the drawing]

FIG. 1 is a schematic sectional view showing a conventional photochemical film forming apparatus, and FIG. 2 is a schematic sectional view showing an embodiment of this apparatus. In the figure, (2) is the ID board, (11) is the reaction gas inlet, (12) is the reaction gas outlet, (16) is the reaction chamber, (17) is the light source chamber, (19) is the light source, (21)
is a light shaping means. All

Claims (3)

[Claims] (1) A reaction chamber main body in which a plurality of flat substrates are housed in parallel, and the interior thereof is made into an atmosphere of reaction gas corresponding to the film to be formed on the plane of the substrate, and a reaction chamber body is located opposite to the plane of the substrate. A light source that emits light with excellent straightness and convergence; a light source that is disposed between this light source and the substrate, receives light from the light source, and directs the incident light to the surroundings of the substrate. A photochemical vapor phase acid model equipped with a light shaping means that emits light in a direction perpendicular to the plane of the substrate. (2) The reaction chamber body has a reactive gas inlet on the side opposite to the light source with respect to the substrate, and a reactive gas outlet on the side of the light source with respect to the substrate. A photochemical vapor deposition apparatus according to Scope 1. (3) Example of straightness and convergence The photochemical vapor deposition apparatus according to claim 1 or 2, wherein the light having excellent straightness and convergence is a laser beam.