JPS6074233A - Manufacture of target for camera tube - Google Patents

Manufacture of target for camera tube

Info

Publication number
JPS6074233A
JPS6074233A JP18052983A JP18052983A JPS6074233A JP S6074233 A JPS6074233 A JP S6074233A JP 18052983 A JP18052983 A JP 18052983A JP 18052983 A JP18052983 A JP 18052983A JP S6074233 A JPS6074233 A JP S6074233A
Authority
JP
Japan
Prior art keywords
film
etching
target
dry
electrically conducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18052983A
Other languages
Japanese (ja)
Inventor
Hiroshi Motoyama
博 本山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP18052983A priority Critical patent/JPS6074233A/en
Publication of JPS6074233A publication Critical patent/JPS6074233A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)

Abstract

PURPOSE:To improve film characteristics and to enhance the dark current inhibiting effect, and at the same time, to improve picture quality by dry-etching the surface of a transparent electrically conducting film formed over a glass plate, at high-frequency, at a predetermined rate in Ar gas of a predetermined pressure and thereafter, by forming a photo-conductive film on top. CONSTITUTION:A transparent electrically conducting film 2 is formed on a glass plate 1. Then the surface of the transparent conducting film 2 is dry-etched at high frequency in Ar gas having a pressure between 1X10<-2> and 1X10<-4>Torr, so that the surface will be even. The rate of etching should be 40-80Angstrom per minute and approximately 160Angstrom are removed on the whole Finally, a blocking-type photoconductive film 3 comprising an evaporated CdSe film 3a, CdSeO3 film 3b obtained by oxidation of the CdSe film and an evaporated As2S3 film 3c is formed over the transparent electrically conducting film 2 after high frequency dry-etching. According to this construction, the film characteristics, especially dark current inhibitting effect can be greatly improved.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は、撮像管用ターゲットの製造方法に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a method of manufacturing a target for an image pickup tube.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

一般にビジコン形撮像管のターゲットは、ガラス面板上
に透明Ｓ菫、膜（ネサ膜）及び光導電膜が順次積層して
形成されてなっている。Generally, the target of a vidicon type image pickup tube is formed by sequentially laminating a transparent S violet, a film (NESA film), and a photoconductive film on a glass face plate.

ところで上記のようなターゲットを製造するには、従来
　Ｉｎ２Ｏ３，５ｎ０２などの財ネ）を八本として蒸着
、ＣＶ　Ｄ−吹き付は等により透明導電膜なガラス面板
」二に形成している。こθ）うちＣＶＤや吹きｆζ］け
方法で形成した場合、形１ｉｌｙ粒子が大きくなり１表
面の凹凸が激しく、この上に光ＨＪ　Ｎ　ＩＩψを形成
してターゲラ１にした場合、膜特性に著しい欠点が生じ
る。特にＩ；［１止形光模室、膜を有する撮像管におい
ては顕著であった。By the way, in order to manufacture the above-mentioned target, conventionally, a transparent conductive film such as In2O3, 5N02, etc. is deposited on eight glass plates by vapor deposition, CVD-spraying, etc. θ) When forming by CVD or blowing method, the shape 1iliy particles become large and the 1 surface becomes extremely uneven, and when optical HJN IIψ is formed on these to make targetera 1, the film properties are significantly affected. A drawback arises. This was particularly noticeable in image pickup tubes with a stop-shaped optical chamber and a membrane.

すなわち高いターゲット都、圧での暗電流特性の劣化お
よび１ｌｊｌｌ像への白点の発生が出やすくなる不都合
がある。That is, there are disadvantages in that the dark current characteristics deteriorate under high target pressure and pressure, and white spots tend to appear on the 1ljll image.

光ｉｆｆ　％膜としてＳ　ｅ　Ａ、　Ｓ　Ｅ、’　ｅ　
、　Ｓ　ｂ２Ｓ３’ＪのＰ型非晶１４１模を用いる場合
に、ネサ１模をあらかじめ高周波イオンエツチングする
ことは知られている。しかしこの方法をそのま＼（１：
　ｄ　Ｓ　ｅおよび、Ａｓ２８．光導電）１ψのターゲ
ットに通用しても再現性のよいｌＩＱ特性が得に＜＜、
とくにエツチング速段が市いとその（ｌ：ｒｌ向が顕層
になることがわかった。S e A, S E,' e as light if % film
When using a P-type amorphous 141 pattern of S b2S3'J, it is known that the NESA 1 pattern is subjected to high-frequency ion etching in advance. However, this method remains the same\(1:
d S e and As28. Photoconductive) Even if it is used for a 1ψ target, the lIQ characteristic with good reproducibility is especially good.
In particular, it was found that when the etching speed is set, the (l:rl direction) becomes more obvious.

〔発明の目的〕[Purpose of the invention]

この発明の目的は、透明導電膜の表面を低エツチング速
度で平滑にして膜特性を向上させ、暗電流抑制効果を高
めると共に画質向上を図った撮像管用ターゲットの製造
方法を提供することである。An object of the present invention is to provide a method for manufacturing a target for an image pickup tube, which improves the film characteristics by smoothing the surface of a transparent conductive film at a low etching rate, thereby enhancing the dark current suppressing effect and improving the image quality.

〔発明の概要〕[Summary of the invention]

この発明は、ガラス面板上に透明導電膜を形成した後、
この透明導電膜の表面をＩＸＨ）’−２〜Ｉ　Ｘ　１．
ＯＴｏｒｒのＡｒ雰囲気中で４０〜８０Ａ／分の割合で
高周波ドライエツチングし、その後、この透明導電膜上
にＣｄＳｅおよびＡＳ２Ｓｓ蒸着からなる光導電ｉ＋１
を形成する撮像管用ターゲットの製造方法である。In this invention, after forming a transparent conductive film on a glass face plate,
The surface of this transparent conductive film is IXH)'-2 to IX1.
High-frequency dry etching is performed at a rate of 40 to 80 A/min in an Ar atmosphere of OTorr, and then a photoconductive i+1 layer consisting of CdSe and AS2Ss vapor deposited on this transparent conductive film.
This is a method of manufacturing a target for an image pickup tube.

〔発明の実施例〕[Embodiments of the invention]

この発明による撮像管用ターゲットの製造方法は、第１
図に示すように構成されている。The method for manufacturing a target for an image pickup tube according to the present invention includes a first method for manufacturing a target for an image pickup tube.
It is configured as shown in the figure.

即ち、先ず（ａ）に示すようにガラス面板１上に、例え
ば酸化錫（ＳｎＯ□）を八本としてＣＶＤや吹き付は方
法により透明導電膜（ネｆ膜）２を形成する。このとき
の透明導電膜２の表ｉＲ１を電子顕微鏡で見ると、ａ３
２図のように表面の突起が多い表面状態になっている。That is, first, as shown in (a), a transparent conductive film (NEF film) 2 is formed on a glass face plate 1 using, for example, eight films of tin oxide (SnO□) by CVD or spraying. When the surface iR1 of the transparent conductive film 2 at this time is viewed with an electron microscope, a3
As shown in Figure 2, the surface has many protrusions.

なおこのネサ膜としては酸化インジウム　′（Ｉｎ２０
３）酸化チタン、その他公知のし＄１でもよい。Note that this NESA film is made of indium oxide '(In20
3) Titanium oxide or other known materials may be used for $1.

次に、上記透明導電、脆２の表１ｆｆｉ−＋を、ｌ　Ｘ
　１０　’〜ｌ　Ｘ　ｌ　Ｏ’Ｉ’ｏｒｒのＡｒ雰囲気
中で、高周波ドライエツチングを行なう。この場合、エ
ツチング率は１分間にｊνさ４０Ａ〜８０Ａの割合で例
えば合計約１６ＣＩＡ除去する。この高周波ドライエツ
チング後の透明府悼１１県２の表面は″電子顕微鏡で見
ると、第３図のように平滑に／、ｃっでいる。Next, Table 1ffi-+ of the above transparent conductive, brittle 2 is expressed as l
High frequency dry etching is performed in an Ar atmosphere of 10' to lXlO'I'orr. In this case, the etching rate is 40 to 80 A per minute, for example, a total of about 16 CIA removed. After this high-frequency dry etching, the surface of the transparent film 11x2 appears smooth/curved as shown in Figure 3 when viewed with an electron microscope.

最後に、＠１図（ｂ）に示すように、」二装置周波ドラ
イエツチング後の透明Ｓ電膜２−Ｊ−、に、ｉｌ：ｊｌ
常の方法でセレン化カドミウム（Ｏｃｔδｅ）膜３ａを
ＺＭし、これを酸化処即したＣｄＳｅＯ３膜３ｂ、およ
びこの上に三硫化砒素（Ａ　５２Ｓ３）の蒸着膜３Ｃか
らなる明正形光尋電膜３を形成する。Finally, as shown in Figure 1(b), after dry etching the transparent S dielectric film 2-J-, il:jl
A clear-cut optical dielectric film 3 consisting of a CdSeO3 film 3b obtained by ZMing a cadmium selenide (Octδe) film 3a by a conventional method and subjecting it to oxidation treatment, and a vapor-deposited film 3C of arsenic trisulfide (A 52S3) thereon. form.

〔発明の効果〕〔Effect of the invention〕

この発明によれば、透明導電膜の表面を１×１０−２〜
Ｉ　Ｘ　１０−’　ＴｏｒｒのＡｒ雰囲気中で４０〜８
ｏＡ／分の此較的低速度の高周波ドライエツチングして
いるので、透明’Ｊ　′に３’、膜の表面が平滑化され
、この結果、膜特性特に暗電流抑制効果が著しく向上し
た。又、δし浄汚染物質が除去され、１百質が著しく向
」ニした。そしてエツチング速度が低いため特性のよく
そろった撮像特性をよく再、！：（ルできた。According to this invention, the surface of the transparent conductive film is
40-8 in Ar atmosphere at I x 10-' Torr
Since the high-frequency dry etching was carried out at a relatively low rate of oA/min, the surface of the transparent film was smoothed, and as a result, the film properties, particularly the dark current suppressing effect, were significantly improved. In addition, pollutants were removed, and the quality of the water was significantly improved. And because the etching speed is low, the imaging characteristics with well-matched characteristics can be reproduced well! :(I was able to do it.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図（ａ）、（ｂ）はこの発明の一実施例に係る撮像
管用ターゲットの製造方法を示す断面図、第２図及び第
３図はこの発明の製造方法において。 高周波ドライエツチング前と後の透明非電膜の表面を示
す電子顕微鏡写真である。 ｌ・・・ガラス面板、２・・・透明Ｗ″賀膜３・・・光
棉電膜。 出願人代理人　弁理士　鈴　江　武　彦第１図 第２図 第３図 手続補正書（方刻 旧来１５９．、　％　２　、月８　日 特許庁長官　若　杉　和　夫　殿 １、事件の表示 特願昭５８−１８０５２９号 ２　発明の名称 撮像管用ターケ゛ットの製造方法 ３、補正をする者 事件との関係　特許出１頓人 （３０７）　東京芝涌電気株式会社 ４、代」１１１人 ５、補正命令の日付 昭和５９年１月３１日 ６、補正の対象 明細書 ７、補正の内容 ｉｌ＋　願書添付明細書中、第５０第１７行目に「表面
を示す」とあるのを「表面における粒子構造を示す」と
訂正する。1(a) and (b) are cross-sectional views showing a method of manufacturing a target for an image pickup tube according to an embodiment of the present invention, and FIGS. 2 and 3 show the method of manufacturing a target for an image pickup tube according to an embodiment of the present invention. 3 is an electron micrograph showing the surface of a transparent non-electrical film before and after high-frequency dry etching. l...Glass face plate, 2...Transparent W'' membrane 3...Light cotton electrical membrane. Applicant's agent Patent attorney Takehiko Suzue Figure 1 Figure 2 Figure 3 Procedure amendment (engraved) Formerly 159., % 2, August 8th, Kazuo Wakasugi, Commissioner of the Patent Office, 1. Indication of the case, Patent Application No. 180529/1982. 2. Name of the invention. Method for manufacturing a camera tube target. 3. Person making the amendment. Relationship with the case. Patent No. 1 Person (307) Tokyo Shibawaku Electric Co., Ltd. 4, 111 persons 5, Date of amendment order January 31, 1980 6, Specification subject to amendment 7, Contents of amendment il+ Specification attached to application In the 17th line of No. 50, the phrase "indicates the surface" is corrected to "indicates the particle structure on the surface."

Claims (1)

【特許請求の範囲】[Claims] ガラス面板上に遜明導電、膜を形成した後、該透明導電
膜の表面をｌ　Ｘ　１０　’　〜Ｉ　Ｘ　ｉｎ’−’Ｔ
ｏｒｒ　ｏ）　Ａ　ｒ　’ｊＪ囲気中で４−０〜８　（
ｌ　Ａ　７分の割合で高周波ドライエツチングし、その
後、該透明導電膜」二にセレン化カドミウムおよび三硫
化砒素を１１１０次蒸看して光導電膜を形成することを
特徴とした撮像管用ターゲットの製造方法。After forming a transparent conductive film on a glass face plate, the surface of the transparent conductive film is
orr o) A r'jJ4-0~8 (
A target for an image pickup tube characterized in that a photoconductive film is formed by high-frequency dry etching at a rate of 7 minutes, and then 1110 times vaporization of cadmium selenide and arsenic trisulfide on the transparent conductive film. Production method.
JP18052983A 1983-09-30 1983-09-30 Manufacture of target for camera tube Pending JPS6074233A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18052983A JPS6074233A (en) 1983-09-30 1983-09-30 Manufacture of target for camera tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18052983A JPS6074233A (en) 1983-09-30 1983-09-30 Manufacture of target for camera tube

Publications (1)

Publication Number Publication Date
JPS6074233A true JPS6074233A (en) 1985-04-26

Family

ID=16084854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18052983A Pending JPS6074233A (en) 1983-09-30 1983-09-30 Manufacture of target for camera tube

Country Status (1)

Country Link
JP (1) JPS6074233A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5137155A (en) * 1974-09-25 1976-03-29 Sekisui Chemical Co Ltd Atsunikubuto usunikubutoo kogo nyusuru jushikanno seizohoho
JPS5256097A (en) * 1975-11-04 1977-05-09 Hitachi Ltd Preparing of target of vidicon

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5137155A (en) * 1974-09-25 1976-03-29 Sekisui Chemical Co Ltd Atsunikubuto usunikubutoo kogo nyusuru jushikanno seizohoho
JPS5256097A (en) * 1975-11-04 1977-05-09 Hitachi Ltd Preparing of target of vidicon

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