JPS607164A - Bonding wire - Google Patents

Bonding wire

Info

Publication number
JPS607164A
JPS607164A JP58114975A JP11497583A JPS607164A JP S607164 A JPS607164 A JP S607164A JP 58114975 A JP58114975 A JP 58114975A JP 11497583 A JP11497583 A JP 11497583A JP S607164 A JPS607164 A JP S607164A
Authority
JP
Japan
Prior art keywords
bonding
wire
less
ball
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58114975A
Other languages
Japanese (ja)
Other versions
JPH0436462B2 (en
Inventor
Kenichi Sato
謙一 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP58114975A priority Critical patent/JPS607164A/en
Publication of JPS607164A publication Critical patent/JPS607164A/en
Publication of JPH0436462B2 publication Critical patent/JPH0436462B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/4851—Morphology of the connecting portion, e.g. grain size distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)
  • Conductive Materials (AREA)

Abstract

PURPOSE:To increase bonding strength, by forming a bonding wire with an Al alloy, including 0.002-0.5% of Ti, less than 0.05% of Fe and less than 0.03% of Si. CONSTITUTION:An alloy, which includes 0.002-0.5% of Ti, less than 0.05% of Fe and less than 0.03% of Si, and comprises Al for the rest of the above described elements, is used for manufacturing a bonding wire. The Ti prevents the enlargement of crystal grains of the wire into rough grains at and in the vicinity of a ball when the ball is formed at the time of bonding. Thus the strength and reliability of the bonding are improved. By specifying the rate of inclusion of the Fe in the alloy to be less than 0.05% and that of the Si to be less than 0.03%, wire drawing property is enhanced. In order to prevent the oxidation when the Al is fused and to improve ball forming ability, Be can be added in the range of 0.0005-0.1%. In order to improve corrosion resistance, 0.1-2.0% of Mn can be included.

Description

【発明の詳細な説明】 （技術分野）・ 本発明は、半導体装置、集積回路（ＩＣ）等も（以下、
ＩＣ等と称す悴蕾気的接続に用いられるボンディングワ
イヤに関するものである。[Detailed Description of the Invention] (Technical Field) The present invention also applies to semiconductor devices, integrated circuits (IC), etc. (hereinafter referred to as
The present invention relates to bonding wires used for electrical connections such as ICs.

（背景技術） 従来、例えばＩＣチップとパッケージを電気接続するに
は、第１図に示すように、ＩＣＩの電極２とパッケージ
３の導電回路４０間をボンディングワイヤ５により接続
していた。(Background Art) Conventionally, in order to electrically connect, for example, an IC chip and a package, the electrode 2 of the ICI and the conductive circuit 40 of the package 3 have been connected by a bonding wire 5, as shown in FIG.

このボンディングワイヤには極細の金属線が用いられる
。従来Ｊ線としては線径２５μ近傍のものにはＡｌ−１
’％ｓｉ合金線が使用されていだが、これはＩＣ等への
ボンディングに超音波圧接によるウェッジボンディング
しか使用できず、この方法には方向性があるだめ、ｌボ
ンディング当りの所要時間が長く、従来のＡｎ線の無方
向性ポールボンディングに対抗できなかった。ここでポ
ールボンディングとは、酸水素炎や放電などの手段によ
シ接続部にポールを形成させてボンディングする方法で
ある。An extremely thin metal wire is used for this bonding wire. Conventional J wires with a wire diameter of around 25μ are made of Al-1.
%Si alloy wire has been used, but this method can only be bonded to ICs by wedge bonding using ultrasonic pressure welding, and since this method has directionality, the time required per 1 bonding is long, and compared to conventional methods. It was not possible to compete with the non-directional pole bonding of the An wire. Here, pole bonding is a method of bonding by forming a pole at a connecting portion using means such as oxyhydrogen flame or electric discharge.

一方ＩＣチップの電極はＡ、ｌ又は４合金が殆んどであ
１３、Ａｌｇ−Ａｕの接続は後工程の加熱時において金
属間化合物が生成して脆くなり、信頼性がｈｌ　−Ａ、
（Ｊの接続より劣っており、又Ａｕの使用によるコスト
の増加が不可避であった。On the other hand, the electrodes of IC chips are mostly made of A, 1, or 4 alloys13, and the Alg-Au connection becomes brittle due to the formation of intermetallic compounds during heating in the post-process, reducing reliability.
(It was inferior to the J connection, and an increase in cost due to the use of Au was unavoidable.

ボンディングマシーンの改良により、放電等により周線
についてもボール形成が成されるようになったが、いず
れの方法も高温によるボール形成法をとるため、ボール
およびボール近傍の線材に結晶粒の粗大化を生じ、ボン
ディング強度が低い欠点があった。Improvements in bonding machines have made it possible to form balls on peripheral wires using electrical discharge, etc. However, since both methods use high-temperature ball formation, crystal grains may become coarse in the balls and the wire near the balls. The problem was that the bonding strength was low.

（発明の開示） 本発明は、」二連の問題点を解決するため成されたもの
で、高温によるボール形成時にもボールおよびボール近
傍の結晶粒の粗大化を防止して、ボールボンド法による
ボンディングを可能にすると共に、ボンディング強度を
向上し、コストを低減し得るボンディングワイヤを提供
せんとするものである。(Disclosure of the Invention) The present invention has been made to solve two problems, and it is possible to prevent coarsening of the ball and crystal grains near the ball even when forming a ball at high temperatures, and to prevent the coarsening of the ball and crystal grains near the ball. The present invention aims to provide a bonding wire that enables bonding, improves bonding strength, and reduces costs.

本発明は、Ｔｉ　Ｏ，００２〜０．５％を含み、Ｆｅを
０．０５％以下、Ｓｌを００３％以下に規定し、残部が
本質的にＡＩより力る合金から成ることを特徴とするボ
ンディングワイヤである。The present invention is characterized in that it contains TiO, 0.002 to 0.5%, Fe is specified to be 0.05% or less, Sl is specified to be 0.003% or less, and the balance essentially consists of an alloy that is stronger than AI. It is a bonding wire.

本発明において、合金中のＴｉはボンディング時のポー
ル形成におけるボールおよびボール近傍の線材の結晶粒
の粗大化を防１にして、ボンディングの強度、信頼性を
改良するものである。Ｔ１量を０．００２〜０５％と規
定したのは、０００２％未満では結晶粒の粗大化防止に
効果なく、０５％を越えると伸線性の劣化を招くからで
ある。In the present invention, Ti in the alloy prevents coarsening of the crystal grains of the ball and the wire near the ball during pole formation during bonding, thereby improving the strength and reliability of bonding. The reason why the amount of T1 is specified as 0.002 to 05% is that if it is less than 0.002%, it is not effective in preventing coarsening of crystal grains, and if it exceeds 0.05%, it will cause deterioration in wire drawability.

又合金中のＦｅを０．０５％以下、Ｓｉをｏ、　ｏ　ｓ
　′ｆ−以下に規定するのは伸線加工性を良くするため
で、Ｆｅ／Ｓｉ比を２以上にすることが望寸しく、それ
ぞれ］−記限界外となると極細線への加工が備かしくな
る。Also, Fe in the alloy is 0.05% or less, Si is o, o s
The following values are specified in order to improve the wire drawability, and it is desirable that the Fe/Si ratio is 2 or more. Become.

従って合金の製造には純度９９．９％・以」二のｈｌ地
金、望ましくは純度９９．９５％以上のＭ地金を使用す
ることが好ましい。Therefore, it is preferable to use an HL ingot with a purity of 99.9% or higher, preferably an M ingot with a purity of 99.95% or higher, for producing the alloy.

なお、Ａ４溶融時の酸化を防止してボール形成能を改善
するため、ｎｅを０．０００５〜０１％の範囲で添加し
ても良い。In addition, in order to prevent oxidation during A4 melting and improve ball forming ability, ne may be added in a range of 0.0005 to 01%.

本発明において、Ａｉ金合金中Ｂは結晶粒の粗大化の防
止をさらに効果あらしめるだめに添加するもので、Ｂ量
０．０００５％未満では改善効果がなく、Ｂ量０１％を
越えると効果が飽和するのみならず、（’ｌ”　！？！
　ｌ’４°″”（ｔｅｅｍ＜°　７又本発明において、
ｈ１合金中にＭｎＯ，６〜２０％含むことが好ましり、
Ｍｎは耐食性の向上とボンディングにおけるポール形成
能能を改良するもので、Ｍｎｏ、＋％未満では耐食性、
ポール形成能の改善効果なく、２０％を越えると鋳造時
に晶出物を形成する量が多く、伸線加工性が悪くなる。In the present invention, B in the Ai gold alloy is added to further increase the effect of preventing coarsening of crystal grains, and if the B amount is less than 0.0005%, there is no improvement effect, and if the B amount exceeds 0.1%, there is no effect. Not only is it saturated, but also ('l”!?!
l'4°""(teem<° 7 Also, in the present invention,
It is preferable that the h1 alloy contains MnO in an amount of 6 to 20%,
Mn improves corrosion resistance and pole formation ability in bonding, and if Mno is less than +%, corrosion resistance,
If it exceeds 20%, a large amount of crystallized substances will be formed during casting without any effect of improving the pole forming ability, and wire drawability will deteriorate.

かように構成することにより、本発明のボンデインクワ
イヤは線径２５μ前後の極細線として優れり耐食性、加
工性、ボールボンディング性を得ることができる。With such a structure, the bonded ink wire of the present invention is an ultra-fine wire with a wire diameter of about 25 μm, and can have excellent corrosion resistance, workability, and ball bonding properties.

（実施例） 金属Ｓ■を添加して溶製した後、溶湯からセラミックフ
ィルターでｌθμ以上の介在物を除去して、ビレットに
鋳造した。(Example) After the metal S■ was added and melted, inclusions of lθμ or more were removed from the molten metal using a ceramic filter, and a billet was cast.

このビレットを、ホモ処理、表面切削した後、熱間押出
しにより１０ｍｍφの線材とした後、皮剥、伸線、中間
熱処理を組合せて２５μｍφのボンディングワイヤを作
成した。This billet was subjected to homogenization treatment, surface cutting, and hot extrusion to form a wire rod of 10 mm in diameter, followed by a combination of peeling, wire drawing, and intermediate heat treatment to create a bonding wire of 25 μm in diameter.

得られたボンディングワイヤの製造時の伸線性、耐食性
、ボールボンディングによるボンディング強度は表１に
示す通りである。The wire drawability, corrosion resistance, and bonding strength by ball bonding of the obtained bonding wire during manufacture are as shown in Table 1.

伸線性は、伸線量１ｙ当りの断線率をＡｌ−１％Ｓｉ合
金の場合を１．０として相対値で表わしたものであり、
耐食性は、温度４５℃、相対湿度９０チにおける寿命を
同じく相対値で表わしたものであり、ポンディング強度
は、ボンディングワイヤを放電方式のボールボンダーに
てＩＣチップとリードフレームの間をボンディングして
、線の中央において破壊試験をした時の強度を同じく相
対値で表わしたものである。Wire drawability is expressed as a relative value, with the wire breakage rate per y of wire drawing amount being 1.0 in the case of Al-1% Si alloy,
Corrosion resistance is expressed as a relative value of the lifespan at a temperature of 45°C and a relative humidity of 90°C. Bonding strength is measured by bonding a bonding wire between an IC chip and a lead frame using a discharge type ball bonder. , the strength when a destructive test is performed at the center of the line is also expressed as a relative value.

表　１ 表１より、本発明による！１〜Ｉ８は従来例に比べ、い
ずれも伸線性良好で、ポンディングワイヤとしての耐食
性に優れ、ポンディング強度が高いことが分る。Table 1 From Table 1, according to the present invention! It can be seen that wires No. 1 to I8 all have good wire drawability, excellent corrosion resistance as bonding wires, and high bonding strength compared to the conventional examples.

（発明の効果） 上述のように構成された本発明のポンディングワイヤは
次のような効果がある。(Effects of the Invention) The bonding wire of the present invention configured as described above has the following effects.

（イ）　Ａｊ？合金が、Ｔｉ０．００２〜０５％を含む
ため、ポンディング時のポール形成におけるボールおよ
びボール近傍の線材の結晶粒の粗大化を防止するので、
ボンディングの強度が高く、九を０５０５％以下、Ｓｉ
を０．０８％以下に規定したため、伸線加工性が良く、
製造が容易である。(a) Aj? Since the alloy contains 0.002 to 05% Ti, it prevents coarsening of the crystal grains of the ball and the wire near the ball during pole formation during bonding.
High bonding strength, 9.0505% or less, Si
Since it is specified to be 0.08% or less, wire drawability is good,
Easy to manufacture.

（ロ）　ＩＣ等へのボールポンディングが可能であるた
め、ボンディング速度を向上し、又Ａｕ線を使用せず、
かつ耐食性を向上するため、ＩＣ等への信頼性を向上し
、コストを低減する。(b) Ball bonding to ICs, etc. is possible, which improves bonding speed and eliminates the use of Au wire.
In addition, since corrosion resistance is improved, reliability of ICs and the like is improved and costs are reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

図はＩＣのボンディングの例を示す断面図である。 １・・・ＩＣ，２・・・電極、３・・・パッケージ、４
・・・導電回路、５・・・ポンディングワイヤ。The figure is a sectional view showing an example of IC bonding. 1...IC, 2...electrode, 3...package, 4
... Conductive circuit, 5... Bonding wire.

Claims (1)

【特許請求の範囲】 ｆｉｌ　Ｔ　ｉ　０．００２〜０．５％を含み、Ｆｅを
０．０５％以下、Ｓｉを０．０３％以下に規定し、残部
が本質的にＡ４よりなる合金から成ることを特徴とする
ボンディングワイヤ。 （２）残部がＢｏ、０００５〜０．１係を含む特許請求
の範囲第１項記載のボンディングワイヤ。 （３）＠部がＭｎＯ，１〜２．０％を含む特許請求の範
囲第１項又は第２項記載のボンディングワイヤ。 （４）　合金が、純度９９．９％以上のＡｌ地金を用い
て製造されたものである特許請求の範囲第１項、第２項
又は第３項記載のボンディングワイヤ。 （５）　ポンチ゛イングワイヤが、ポールホント用のも
のである特許請求の範囲第１項、第２項、第３項又は第
４項記載のボンディングワイヤ。[Claims] Consisting of an alloy containing fil T i 0.002 to 0.5%, Fe defined as 0.05% or less, Si as 0.03% or less, and the remainder essentially consisting of A4. A bonding wire characterized by: (2) The bonding wire according to claim 1, wherein the remainder contains Bo, 0005 to 0.1. (3) The bonding wire according to claim 1 or 2, in which the @ portion contains 1 to 2.0% MnO. (4) The bonding wire according to claim 1, 2, or 3, wherein the alloy is manufactured using an Al base metal with a purity of 99.9% or more. (5) The bonding wire according to claim 1, 2, 3, or 4, wherein the punching wire is for pole real use.
JP58114975A 1983-06-24 1983-06-24 Bonding wire Granted JPS607164A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58114975A JPS607164A (en) 1983-06-24 1983-06-24 Bonding wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58114975A JPS607164A (en) 1983-06-24 1983-06-24 Bonding wire

Publications (2)

Publication Number Publication Date
JPS607164A true JPS607164A (en) 1985-01-14
JPH0436462B2 JPH0436462B2 (en) 1992-06-16

Family

ID=14651255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58114975A Granted JPS607164A (en) 1983-06-24 1983-06-24 Bonding wire

Country Status (1)

Country Link
JP (1) JPS607164A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5887841A (en) * 1981-11-20 1983-05-25 Tanaka Denshi Kogyo Kk Al wire for bonding of semiconductor element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5887841A (en) * 1981-11-20 1983-05-25 Tanaka Denshi Kogyo Kk Al wire for bonding of semiconductor element

Also Published As

Publication number Publication date
JPH0436462B2 (en) 1992-06-16

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