JPS6070577A - Magnetic bubble memory element - Google Patents

Abstract

PURPOSE:To form the propagation path of fine bubbles and to hold the bubbles with a small holding magnetic field by arranging a permalloy propagation path element close to the convex part of an ion implantation propagation path formed by ion implantation method on the ion implantation propagation path. CONSTITUTION:The chevron type permally propagation element 13 is arranged along the tips of the ion implantation propagation path 12. Since the cusps 14 of the ion implantation propagation path 12 take charge of the propagation, a gap (g) can be set up to the bubble diameter or more. When bubbles are to be stopped and held, the holding magnetic field is applied to the arrow direction, so that the bubbles are held on the tips of the permalloy propagation path element 13 on the upper side of the propagation path and on the cusps 14 of the ion implantation propagation path 12 on the lower side. Consequently, the necessary size of the holding magnetic field is <=1/3 as compared to the case holding the bubbles on the tips of the ion implantation propagation path 12 and the magnetic field is made asymmetrical about the advancing direction of the bubbles to stabilize the bubble propagation moreover.

Description

DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a magnetic bubble memory device used as a storage device for electronic computing devices and the like.

Prior Art and Problems Conventionally, the propagation path of a magnetic bubble memory element is as shown in Fig. 1a and b.
A propagation path 1 formed of an i4-malloy thin film as shown in FIG. 2 and a propagation path 2 formed by ion implantation as shown in FIGS. 2a and 2b are known. All of them are formed by applying photolithography technology. However, since the former propagation path 1 using permalloy requires a gap g of 2/3 or less of the bubble diameter, when using microbubbles of about 1 μm,
A gap of 0.7 μm or less was required, which had the disadvantage that it could not be achieved using normal photolithography technology. On the other hand, the latter ion implantation propagation path 2 propagates bubbles by a charged wall that occurs at the boundary between the ion implanted part and the non-ion implanted part, so it does not require a gap and can propagate bubbles of 1 μm or less with a minimum dimension of about 1 μm. can.

However, when the bubble is stopped and held in this ion implantation propagation path, it can be held in the concave part (hereinafter referred to as cusp) 4 with an extremely small holding magnetic field (hereinafter referred to as hold magnetic field), but in the convex part (hereinafter referred to as cusp)
In order to stop and hold the tip at 5 (hereinafter referred to as the tip), an extremely large holding magnetic field is required. As shown in Fig. 3, even if the hold magnetic field direction 6 is changed by 90 degrees, there is always one or more bubbles 7 that stop at the tip, so the overall size of the hold magnetic field must be extremely large. was there. Note that in the permalloy propagation path, it is possible to stop and hold at any position with a small hold magnetic field.

9th Object of the Invention In view of the above-mentioned drawbacks of the conventional art, the present invention provides a magnetic bubble memory element that can form a propagation path for microbubbles using the normal photoring 2-fi technology and can hold the bubbles with a small holding magnetic field. The purpose is to

According to the present invention, the present invention provides a magnetic papule mesori element in which a bubble propagation path is formed on the surface of a bubble crystal. This is achieved by providing a magnetic bubble memory device characterized in that a So-Malloy propagation device is arranged along the ion implantation propagation path.

Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.

FIG. 4 is a diagram for explaining the magnetic bubble memory element according to the present invention, in which a is a block diagram and b is an explanatory diagram of the operation.

In the figure, 10 indicates an ion implantation section, 11 a non-ion implantation section, 12 an ion implantation propagation path, and 13 a permalloy propagation element.

In this embodiment, a chevron-shaped permalloy propagation element 13 is arranged along the tip of an ion implantation propagation path 12 as shown in the figure.

In this embodiment configured as described above, the gap between the e-ma p propagation elements 13 is located at the cusp 1 of the ion implantation propagation path 12.
4 takes charge of propagation, the gap f of the permalloy propagation element 13 can be made larger than the bubble diameter, and therefore, it is possible to create a propagation path for microbubbles even with ordinary photolithography technology.

In addition, to stop and hold the bubble, if the hold magnetic field 15 is applied in the direction of the arrow as shown in Figure 4, the top of the permalloy propagation element 13 is placed on the upper side of the propagation path, and the scrap 7' of the ion implanted propagation path is placed on the lower side. 14 respectively hold bubbles 16 and 17. The magnitude of the hold magnetic field required at this time is sufficient to stably hold f/I/ at the apex of the permalloy propagation element 13, and is 1/3 or less compared to the case where it is held at the tip of the ion implantation propagation path. The size will be .

FIG. 5 is a diagram for explaining another embodiment, in which a shows a diamond shape and b shows a non-diamond W. In this figure, the same parts as in FIG. 4 are designated by the same reference numerals.

This embodiment differs from the previous embodiment in that the permalloy propagation elements 13 in both a and b are asymmetric chevrons.

This embodiment configured in this way has a permalloy propagation element 1.
3 is asymmetrical with respect to the traveling direction of the bubble indicated by the arrow, so the propagation of the puzzle is further stabilized compared to the previous embodiment.

Effects of the Invention As explained in detail above, the magnetic gupple memory element of the present invention has a /f-malloy propagation element disposed near the tip of the ion implantation propagation path, and the f-gupple propagation in this part is controlled by the permalloy propagation element. In the gear 276 part of the Malloy propagation element, the ion implantation propagation path takes charge of the propagation, and the propagation path of minute/6 pulls can be formed using ordinary photolithography technology. This has a great effect of being able to hold the pull with the hold magnetic field.

[Brief explanation of the drawings] Figure 4 is a diagram showing the propagation path using conventional permalloy.
3 is a diagram illustrating a propagation path by conventional ion implantation, FIG. 3 is an explanatory diagram of a bubble stop position in a conventional ion implantation propagation path, and FIG. 4 is a diagram illustrating a magnetic bubble memory element according to the present invention. FIG. 5 is a diagram for explaining another embodiment. In the drawings, IO indicates an ion implantation section, 11 a non-ion implantation section, 12 an ion implantation propagation path, and 13 a Permalloy propagation element. Patent applicant Fujitsu Limited Patent agent Akira Aoki Patent attorney Kazuyuki Nishidate 1) Yukio Patent attorney Akira Yamaguchi 20th 3rd 50th

Claims (1)

[Scope of Claims] 1. In a magnetic bubble memory element in which a bubble propagation path is formed on the surface of a bubble crystal, the bubble propagation path is formed by ion implantation in the vicinity of a protrusion of the ion implantation path formed by the ion implantation method. A magnetic bubble memory device characterized in that propagation elements are arranged along the propagation path. 2. The magnetic bubble memory device according to claim 1, wherein the gap between the 2.7 and 1 Malloy propagation elements is equal to or larger than the bubble diameter. 3,/4′-Magnetic bubble memory device 0 according to claim 1 or 2, characterized in that the Malloy propagation device is asymmetrical with respect to the bubble propagation direction.