JPS59113587A - Block replicator of ion implantation bubble device - Google Patents

Abstract

PURPOSE:To attain a stably operating block replicator, by providing a hairpin- shaped conductor pattern over a cusp of a major line from a cusp of a minor loop on the line connecting the cusp of the major line and the cusp of the minor loop. CONSTITUTION:A conductor pattern 12 is formed into a hairpin shape over a a cusp 10a of the major line from a cusp 11a of the minor loop. When a bubble 14 is transferred to the cusp 10a of a minor loop 11 as shown in Fig. (a), a pulse I1 is impressed to the conductor pattern 12 in the direction where the bubble is striped. Thus, the bubble 14 is expanded on the inside of the hairpin- shaped conductor pattern 12 over the cusp 10a of the major line as shown in Fig. (b). Next, when a pulse I2 having an opposite polarity is impressed, the bubble is cut into bubbles 14' and 14'' in a non-implantation area between cusps 10a and 10b of major lines as shown in Fig. (c). Consequently, the bubble is not trapped halfway.

Description

DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a block replicator for an ion implantation magnetic bubble device. '(2) Background of the technology Magnetic bubble utilization devices that use magnetic bubbles to store information, perform logical operations, etc. have features such as non-volatility, high storage density, and low power consumption, as well as mechanical elements. Since it is a solid-state device that does not contain any solid matter, it is extremely reliable and has various characteristics, so it is expected to have a promising future as a large-capacity memory.

In order to improve the storage density of such magnetic bubble memory devices, a method has been developed in which bubble transfer paths are formed by ion implantation. In this method, as shown in the plan view of FIG. 18 and the cross-sectional view of FIG. Then, ions such as hydrogen, neon, helium, etc. are implanted into the magnetic thin film 2 into a region 4 other than the region which will become the driving magnet 3. In the element in which the drive pattern region 3 is formed in this way, the direction of the easy magnetization axis of the ion-implanted region 4 coincides with the in-plane direction as shown by the arrow a, and the direction of the easy magnetization axis of the drive pattern region 3 is as shown by the arrow a. It is perpendicular to the original in-plane direction.

Therefore, by applying a bias magnetic field and a rotational driving magnetic field, the bubble 5 is transferred along the periphery of the driving pattern 3 as shown by arrow C. This pattern 3 has a shape in which circles and squares are arranged in a row so that some of them overlap, and does not require gaps like the conventional Ni-Malloy pattern, so it does not require loose dimensional accuracy, and therefore The e-turn can be made smaller and higher density can be achieved.

(3) Prior Art and Problems When such an ion-implanted magnetic bubble memory element has a meso-minor configuration, a block replicator having a structure as shown in FIG. 2 has conventionally been used. In the same figure, 6 is the major line, 7 is the minor loose, and 8 is the major line.
9 is a hairpin-shaped conductor pattern, and 9 is an ion non-implanted region provided for bubble cutting. The operation of this resolicator is such that when the bubble reaches the tip d of the minor loop 7, a current is applied to the conductor/f turn 8 to extend the bubble within the hairpin loop, and then the bubble reaches the tip d of the area 9 and f.
((A charged wall of repulsion is generated and cut, and one side is attracted to the minor loose a MV, and the other side is attracted to the cusp g of the main gloss line, completing the resolicade operation. There was a drawback that bubbles were trapped in the injection region 9, which caused malfunctions.

(4) Object of the Invention An object of the present invention is to provide a block replicator for an ion implantation bubble device that operates stably in view of the above-mentioned conventional drawbacks.

(5) Structure and object of the invention According to the present invention, an ion-implanted layer is formed on the entire surface of a magnetic puzzle crystal except for a region that will become a bubble driving pattern, and the driving pattern is formed into a bubble. A block replicator in an ion implantation bubble device with a major-minor configuration used as a transfer path, in which a hairpin-shaped conductor node is formed beyond the cusp of the major line from the cusp of the minor loose on the line connecting the cusp of the major line and the cusp of the minor loop. This is achieved by providing a block replicator of the ion implantation/pull device, which is characterized by the presence of turns.

(6) Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.

FIG. 3 is a diagram for explaining the structure of a block replicator of an ion-implanted node according to the present invention. In the same figure, 10 is a major line, the pattern is connected every two pieces, and the cusp 10B is attached to the connecting part.
and 10b are formed. Reference numeral 11 indicates a folded minor loop, and 12 indicates a conductor noceturn. Conductano or turn 12 is cusp 1 of major line 10
On the line connecting 0B and the cusp lla of the minor roof °11, it is formed in a hairpin shape from the minor loose cusp llB to beyond the major line cusp 7'lO&.

The operation of this embodiment formed in this manner will be explained using FIG. 4. In the figure, a to d are explanatory diagrams of operation, e is a driving magnetic field, and f is a driving current waveform.

To explain with a diagram, first, as shown in diagram a, minor loose 11
When the bubble 14 is transferred to the cusp 10a of the conductor A, a nockle of I is applied to the conductor A turn 12 in the direction in which the no pull is striped.

In this case, the bubble 14 extends inside the hairpin-shaped conductor arm turn 12 beyond the major line cusps lOa, as shown in Figure b. Then reverse polarity Norrus I2
When is applied, the major line waste flo as shown in figure 0
The bubble is cut in the non-implanted region between a and 10b and 1
4' and 14".

After being further held by the holding current I3, the bubble 14' is attracted to the cusp 11a of the minor loop 11 as shown in Figure d, and the bubble 14'' is attached to the cusp 1 of the major line 10.
It is adsorbed to 0b. As the driving magnetic field rotates, minor loose lines and major lines are transferred as shown by the arrows.

In this embodiment, which operates as described above, the non-implanted region is not located between the minor loop and the major line as in the conventional case, so that bubbles are not trapped midway and stable reglicade operation can be performed.

FIGS. 5 to 7 are diagrams showing operating characteristics in triangular wave drive at a drive frequency of 100 kHz in comparison with conventional products.

FIG. 5 shows the HD-HB characteristics. The horizontal axis represents the drive magnetic field HD, and the vertical axis represents the bias magnetic field HB. Curves A and A' represent the curves B and B of the product of the present invention. 'The characteristics of the conventional products are shown. As for the conditions of the /f pulse to be applied, according to the waveform diagram in FIG.
4μs1 Il-13l1-13=80=110
mA, θ=-61.2°, and I1 for the conventional product.
= (13μs % I2 = + 5 Q nS S
I3-0.3μ8. II = I3 = 120 mA
, I2 =50 mA.

θ=0°.

As shown in the figure, it can be seen that the product of the present invention has a larger ear margin width than the conventional product and operates more stably.

Figure 6 is a diagram showing the θ-HB characteristics, where the horizontal axis shows the applied A? The curve A shows the characteristics of the product of the present invention, and the curve B shows the characteristics of the conventional product. The pulse conditions for the product of the present invention are 11=I3=8.
0mA)]2 = 110mA, and the conventional product is 11 = I
3 = 120 mA, , I2 = 50 mA.

FIG. 7 is a diagram showing the characteristics of ll-H, where the horizontal axis represents the pulse 11 and the vertical axis represents the bias magnetic field. Curve A represents the characteristics of the inventive product, and curve B represents the conventional product. showed the characteristics of In addition, in the case of the product of the present invention, I2=
110mA, θ=-61.2°, I2 for conventional product
−50 mA% θ=θ°.

As shown in Figures 6 and 7, the θ-HB characteristics are not much different from the conventional product, and the It-Hn characteristics have a current margin of 15 mA.
and is in good condition.

(7) Effects of the Invention As explained in detail above, the block replicator of the ion implantation bubble device of the present invention has a simple structure and can eliminate the problem of bubble dragging at the non-inside part and achieve stable block replication operation. It would be very effective if it were made possible.

[Brief explanation of the drawing]

Figure 1 is a diagram for explaining an ion implantation bubble device, Figure 2 is a diagram for explaining a conventional ion implantation bubble device block replicator, and Figure 3 is an ion implantation device according to the present invention. The Nokburde/Bousu diagram is its operating characteristic diagram, and Fig. 5 is the HD-I (B Pf-”i characteristic diagram,
FIG. 6 is a θ-HB characteristic diagram, and FIG. 7 is a 1l-HB characteristic diagram. In the drawing, 10 is a major line, 11 is a minor loop, 12 is a contactor turn, 10a, 10b
indicates the cusp of the major line, and lla indicates the cusp of the minor loop.・1. ”, 1 Cao 1 (a) (b) ξ゛', 2・
- C, scratches. So.111.4 Shi! 5th degree) shi) Driving magnetic field Ho (Oe) 1 shi, ) 6) (phase θ (deg) 1 ζ 7 Fig. 1+ (mA) 567-

Claims (1)

[Claims] 1. A block in an ion-implanted bubble device with a major-minor configuration in which an ion-implanted layer is formed on the entire surface of a magnetic bubble crystal except for a region that becomes a bubble driving pattern, and the driving pattern is used as a bubble transfer path. An ion implantation bubble characterized in that the replicator is formed by providing a hairpin-shaped conductor turn on a line connecting the cusp of the major line and the cusp of the minor lugs, from the cusp of the minor luzo to the cusp of the minor lugs. Device block replicator.