JPS6068325A - Thin film transistor substrate - Google Patents
Thin film transistor substrateInfo
- Publication number
- JPS6068325A JPS6068325A JP59148308A JP14830884A JPS6068325A JP S6068325 A JPS6068325 A JP S6068325A JP 59148308 A JP59148308 A JP 59148308A JP 14830884 A JP14830884 A JP 14830884A JP S6068325 A JPS6068325 A JP S6068325A
- Authority
- JP
- Japan
- Prior art keywords
- light
- members
- display
- thin film
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
Landscapes
- Physics & Mathematics (AREA)
- Liquid Crystal (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、液晶表示装置、特に表示装置を構成する基板
上に駆動用の半導体アレーが一体化されて設けられた液
晶表示セルで用いる薄膜トランジスタ基板の改良に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in thin film transistor substrates used in liquid crystal display devices, particularly in liquid crystal display cells in which a driving semiconductor array is integrally provided on a substrate constituting the display device.
液晶による表示装置は、
(1) 受動型(パッシブ)ディスプレイで消費電力が
非常に小さいこと。Liquid crystal display devices are: (1) Passive displays with extremely low power consumption.
(21低電圧で動作できること。(21) Must be able to operate at low voltage.
(3)パネル型の素子にできること。(3) What can be done with panel-type elements?
(4)大型表示も可能なこと。(4) Large-scale display is also possible.
等、発光型(アクティブ)ディスプレイに見られない特
徴を有しているので、近年数多くの研究・開発が進めら
れている。Because they have characteristics not found in light-emitting (active) displays, much research and development has been carried out in recent years.
この様な液晶表示装置の中でも特開昭50−17599
号公報に示されているような数多くの画素をマ) IJ
クス駆動する表示装置は特に注目を集めて来ている。Among such liquid crystal display devices, Japanese Patent Application Laid-Open No. 50-17599
A large number of pixels as shown in the publication)
2. Description of the Related Art Display devices driven by multiplexes have been attracting particular attention.
即ち、第1図(a)に示す様に表示用パネルを構成する
基板(ガラス等)上に、2〜10本/震程度の密度でマ
トリクス配置された駆動用薄膜トランジスタ(T F
T ; Th1n Film Transistor)
を設けたものである。TPTは、基板S上に形成された
ゲート線1m及び13′(透明又は金属の薄膜導電膜か
らなり)該ゲート線上に設けたゲート電極1. 1′、
IIl、 IIII、該電極上に積層した絶縁膜■、前
記ゲート電極上に絶縁膜を介し形成した薄膜状の半導体
2. 2’、f、 2”、半導体の一端に接して設けた
ソース線(導電膜から成る)3.3’、及び半導体の他
端に設けたドレイン電極4.4’、4“、4″等から構
成されている。That is, as shown in FIG. 1(a), drive thin film transistors (T F
T ; Th1n Film Transistor)
It has been established. TPT includes gate lines 1m and 13' (made of transparent or metal thin conductive films) formed on a substrate S, and gate electrodes 1. 1′,
III, III, an insulating film laminated on the electrode, and a thin film semiconductor formed on the gate electrode with an insulating film interposed therebetween. 2', f, 2'', a source line (made of a conductive film) 3.3' provided in contact with one end of the semiconductor, and a drain electrode 4.4', 4", 4" provided on the other end of the semiconductor, etc. It consists of
第1図(b)は、第1図(a)の矢印B方向から眺めた
平面図であり、マトリクス駆動回路の一部を示している
。FIG. 1(b) is a plan view viewed from the direction of arrow B in FIG. 1(a), and shows a part of the matrix drive circuit.
又、第2図は第1図(b)を線分A A’に沿って切断
した拡大断面図を示している。第2図に於いて、7及び
Sはガラス等の基板、4及び4は前述のドレイン電極、
8は対向電極の導電膜である。4,4乙 8等には、I
n2O3−5n02等の透明導電膜或いは場合によって
Au 、 AI 、 Pd 、等の金属薄膜が使用され
る。1“ 、#′、及び3.3′はそれぞれゲート電極
及びソース線であって、AI。Further, FIG. 2 shows an enlarged sectional view of FIG. 1(b) taken along line segment AA'. In FIG. 2, 7 and S are substrates such as glass, 4 and 4 are the aforementioned drain electrodes,
8 is a conductive film of a counter electrode. 4,4 Otsu 8th place is I
A transparent conductive film such as n2O3-5n02 or a metal thin film such as Au, AI, Pd, etc. is used depending on the case. 1", #', and 3.3' are a gate electrode and a source line, respectively, and are AI.
Au 、 Ag 、 Pt 、 Pd 、 Cu 等の
金属が使用サレル。Metals such as Au, Ag, Pt, Pd, Cu, etc. are used.
5.5′及び9は絶縁膜であり、2″、グけCd8゜C
dS e等の半導体、10けスペーサー、11け液晶層
である。尚、表示装置では、動的散乱モード(DSM)
・ねじれ配列ネマティック(TN)等の表示モードのい
ずれを利用するかによって或いは装置を透過型又は反射
型にするかに応じて、種々の液晶分子配向状態及び偏向
板・λ/4板・反射板等の光学検知手段が適宜設定され
る。5. 5' and 9 are insulating films, 2'', with a depth of Cd8°C.
These are semiconductors such as dS e, 10 spacers, and 11 liquid crystal layers. Note that the display device uses dynamic scattering mode (DSM).
・Depending on which display mode such as twisted nematic (TN) is used or whether the device is transmissive or reflective, various liquid crystal molecule orientation states and polarization plates, λ/4 plates, and reflector plates are available. Optical detection means such as the above are appropriately set.
駆動方法を概説すれば、例えばゲート線1 a。To outline the driving method, for example, gate line 1a.
1a′に画像信号を、ソース線3.3′には駆動用電圧
を走査して印加すると(ゲート線に信号が入力されてい
る間に限って)、これらの電極の交点のうちの選択され
た箇所でソース(3,3’)−ドレイン(4,4“′)
間が導通して、ドレイン電極と対向電極(8)との間で
電場が生じ、液晶層11の液晶分子の配列状態が変化す
ることにより表示が行なわれる。ところが、上記の表示
装置には、装置がパッシブ型である為に次の様な不都合
が生じていた。即ち、表示装置がパッシブ型であるから
、外光によって表示面を照射する必要があるが、TIi
”Tの材料であるCdS 。When an image signal is applied to 1a' and a driving voltage is scanned and applied to source line 3.3' (only while a signal is input to the gate line), a selected one of the intersections of these electrodes is applied. Source (3, 3') - Drain (4, 4"')
When conduction occurs between the drain electrode and the counter electrode (8), an electric field is generated between the drain electrode and the counter electrode (8), and display is performed by changing the arrangement state of liquid crystal molecules in the liquid crystal layer 11. However, since the display device described above is of a passive type, the following problems have occurred. That is, since the display device is a passive type, it is necessary to illuminate the display surface with external light.
``CdS, the material of T.
CdS e等の半導体は顕著な光導電性を有している為
に、動作特性が不安定となるととがある。Since semiconductors such as CdSe have remarkable photoconductivity, their operating characteristics may become unstable.
又、この様な点を改善する目的で、電気的特性が外光に
左右されない半導体であるTeを使用する方法、或いは
半導体部に外光を入射させ々い様にCaF2及び8i0
2から成る(多層膜の)増反射膜を半導体部に積層する
方法等も提案されている。In addition, in order to improve these points, we have proposed a method using Te, which is a semiconductor whose electrical characteristics are not affected by external light, or a method using Te, which is a semiconductor whose electrical characteristics are not affected by external light, or a method using CaF2 and 8i0 to prevent external light from entering the semiconductor part.
A method has also been proposed in which a multilayer reflective film consisting of 2 layers is laminated on a semiconductor portion.
しかし、半導体としてTeを使用する場合には、汎用性
・毒性の点で好ましくないこと、又、増反射膜を形成す
る方法では、正確な厚みで多層膜を設ける必要があって
工程が多く複雑になること等の不都合等を生じる。However, when using Te as a semiconductor, it is unfavorable in terms of versatility and toxicity, and the method of forming an increased reflection film requires a multilayer film with a precise thickness, which requires many steps and is complicated. This may cause inconveniences such as
本発明は、上記諸点に鑑みて成されたものであり、本発
明の主な目的は安定な動作特性を有する表示セルを与え
ることにある。又1本発明の別な目的は、汎用性・毒性
等の点で材料の選択の自由度が制限されないで良好な特
性が得られる表示セルを与えることにある。或いは又、
本発明の別な目的は、同時にコントラストの向上をはか
りやすい表示セルを与えるととkある。The present invention has been made in view of the above points, and the main purpose of the present invention is to provide a display cell having stable operating characteristics. Another object of the present invention is to provide a display cell in which good characteristics can be obtained without restricting the freedom in selecting materials in terms of versatility, toxicity, etc. Or again,
Another object of the present invention is to provide a display cell in which the contrast can be easily improved.
この様な目的を達成する本発明は、半導体駆動回路が表
示基板に設けられた液晶表示セルに於いて、半導体部分
への入射光を遮へいする為の光じゃへい部材が設けられ
ることを特徴とする。The present invention, which achieves these objects, is characterized in that a liquid crystal display cell in which a semiconductor drive circuit is provided on a display substrate is provided with a light shielding member for blocking light incident on the semiconductor portion. do.
この様に半導体部分への入射光を遮へいする部材を設け
ることによって、動作特性が安定した表示セルが得られ
る。By providing a member that shields light incident on the semiconductor portion in this manner, a display cell with stable operating characteristics can be obtained.
第3図は本発明の表示セルの断面構成を示す(第2図と
同一の番号を記したものは、同一のものを示している)
。第2図に示すセルに比較して、光じやへい部材6.6
′が、半導体部分上に設けられている。この構成は外部
光の入射方向が、基板11の上方にある例を示している
が、表示セルを投影型、透過型或いは反射型で用いるか
に従って、光透へい部材の設置場所を種々変えることが
できる。本発明では、光透へい部材を、基板の内壁側或
いは基板の外側等表示セルのいずれの部分に設けても一
応の目的は達せられるが、好ましくは、基板の内壁側に
設けることが望ましい。尚、基板の「内壁側」とは、第
2図に於いて基板7及びSよりも内側、即ち液晶層11
に近い壁面の側を指している。FIG. 3 shows the cross-sectional structure of the display cell of the present invention (those with the same numbers as in FIG. 2 indicate the same ones)
. Compared to the cell shown in FIG.
' is provided on the semiconductor portion. Although this configuration shows an example in which the incident direction of external light is above the substrate 11, the installation location of the light-transmitting member can be changed depending on whether the display cell is used as a projection type, transmission type, or reflection type. Can be done. In the present invention, although the objective can be achieved by providing the light-transmitting member on any part of the display cell, such as on the inner wall side of the substrate or on the outer side of the substrate, it is preferable to provide it on the inner wall side of the substrate. Note that the "inner wall side" of the substrate refers to the inner side of the substrates 7 and S in FIG. 2, that is, the side of the liquid crystal layer 11.
It points to the side of the wall closest to.
光透へい部材としては、黒色又は暗色の光吸収性且つ化
学的に安定な材料が好ましい。例えば蓮へい部材6.6
′を液晶層11、半導体2,2′等に直接接触させる場
合には、これらと先週へい部材とが不要な化学反応を生
じないものを選択することが望ましい。光透へい部材と
して、光吸収性の、有機フィルム或いは有機顔料を分散
させた層を設ける。As the light-transmitting member, a black or dark-colored light-absorbing and chemically stable material is preferable. For example, lotus hei member 6.6
When making direct contact with the liquid crystal layer 11, the semiconductors 2, 2', etc., it is desirable to select a material that will not cause any unnecessary chemical reaction between these and the thin film member. As a light-transmitting member, a light-absorbing organic film or a layer in which an organic pigment is dispersed is provided.
又、本発明表示セルの別な利点として、光透へい部材が
、画像非表示部;即ち半導体部分・ソース或いはゲート
線等画像表示に寄与しない部分を陰べいするマスクを兼
ねることもできる。Another advantage of the display cell of the present invention is that the light-transmitting member can also serve as a mask for obscuring image non-display areas; ie, semiconductor areas, sources, gate lines, and other areas that do not contribute to image display.
この様なマスクが設けられると、隣接する表示セグメン
ト(ドレイン電極)同士が視覚的に分離され、表示装置
全体として外光に対する非表示部分の反射率が下がる為
に、コントラストが相対的に向上する。殊に表示装置を
透過型或いはカラー化する場合には、コントラストの向
上の効果が顕著である。When such a mask is provided, adjacent display segments (drain electrodes) are visually separated from each other, and the reflectance of the non-display portions of the display device as a whole to external light is reduced, resulting in a relative improvement in contrast. . In particular, when the display device is of a transmissive type or a color display device, the effect of improving contrast is remarkable.
又、本発明では、半導体2及び2′の下に設けられた絶
縁膜5.5′及びゲート電極1.1′或いはソース或い
はゲート電極と半導体との接触部分等に光透へい部材を
用いると、更に好ましい結果が得られる。Further, in the present invention, if a light-transmitting member is used for the insulating film 5.5' provided under the semiconductors 2 and 2', the gate electrode 1.1', or the contact portion between the source or gate electrode and the semiconductor, etc. , more favorable results are obtained.
本発明の表示セルは、スタティックな表示に対して良好
なコントラストが得られるのみならず、テレビ画像の様
な高い応答性が要求される動画表示に於いても安定で高
コントラストの表示が行なえる。テレビ画像信号の様に
高速応答性が要求される場合には、各セグメントに並列
に蓄積用コンデンサーを設け、フレームメモリーとして
利用することが望ましい。この場合の表示セルの断面図
を第4図に示す。蓄積用コンデンサーは、絶縁膜12を
介して隣接するゲートからドレイン電極の下側に延びた
導電膜13により構成されている。The display cell of the present invention not only provides good contrast for static displays, but also provides stable, high-contrast display for video displays that require high responsiveness, such as TV images. . When high-speed response is required, such as in the case of television image signals, it is desirable to provide a storage capacitor in parallel to each segment and use it as a frame memory. A cross-sectional view of the display cell in this case is shown in FIG. The storage capacitor is constituted by a conductive film 13 extending from the adjacent gate to below the drain electrode with an insulating film 12 in between.
本発明の液晶表示セルは、偏光板、反射板、λ/4板カ
ラーフィルター等を適宜設けることにより、種々の表示
モード、及び投影型・透過型或いは反射型にして薄型化
・コンパクト化された表示装置として、各種パネルディ
スプレイ:例えば時計或いは計算機等の表示板、小屋テ
レビ、ビデオカメラ用モニター等に応用される。The liquid crystal display cell of the present invention can be made thinner and more compact by providing a polarizing plate, a reflecting plate, a λ/4 plate color filter, etc. as appropriate, so that it can be used in various display modes and can be of a projection type, transmission type, or reflection type. As a display device, it is applied to various panel displays, such as display boards for clocks or calculators, cabin televisions, monitors for video cameras, etc.
第1図(a)は半動体駆動回路を有する基板の一部分を
示す斜視図、第1図(b) Ifiその平面図、第2図
は第1図(a)及び(b)に示す基板を有する表示セル
の部分断面図、第3図は本発明の表示セルの一部を示す
断面図、第4図は本発明の別の実施態様図である。
図に於いて、
l a 、l a’−・−ゲート線Th 1 、 1′
、1//、 lAl1.、、ゲート電極、2.2′、2
#、2″・・・半導体、3.3’・・・ソース線、4.
4’、 4“、4″・・・ドレイン電極、5゜5’、
9.12.I・・・絶縁膜、6.6′・・・光透へい部
材、7.S・・・基板、8・・・導電膜、10・・・ス
ペーサー、11・・・液晶層、13・・・導電膜、であ
る。
出願人 キャノン株式会社Fig. 1(a) is a perspective view showing a part of the board having a semi-moving body drive circuit, Fig. 1(b) is a plan view thereof, and Fig. 2 shows the board shown in Figs. 1(a) and (b). FIG. 3 is a cross-sectional view showing a part of the display cell of the present invention, and FIG. 4 is a diagram showing another embodiment of the present invention. In the figure, la, la'--gate lines Th1, 1'
, 1//, lAl1. ,,gate electrode,2.2',2
#, 2″...Semiconductor, 3.3'...Source line, 4.
4', 4", 4"...Drain electrode, 5°5',
9.12. I...Insulating film, 6.6'...Light transparent member, 7. S: Substrate, 8: Conductive film, 10: Spacer, 11: Liquid crystal layer, 13: Conductive film. Applicant Canon Co., Ltd.
Claims (1)
接するソース電極及びドレイン電極を有する積層構造体
をマトリクス状に配置した薄膜トランジスタ基板におい
て、前記積層構造体の上に光吸収性有機フィルム又は顔
料分散層からなる光速へい部材を設けたことを特徴とす
る薄膜トランジスタ基板。Button on substrate In a thin film transistor substrate in which a laminated structure having a gate electrode, an insulating film, a semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film is arranged in a matrix, a light-absorbing organic film or a light-absorbing organic film is provided on the laminated structure. A thin film transistor substrate characterized in that it is provided with a light-speed shielding member made of a pigment-dispersed layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59148308A JPS6068325A (en) | 1984-07-16 | 1984-07-16 | Thin film transistor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59148308A JPS6068325A (en) | 1984-07-16 | 1984-07-16 | Thin film transistor substrate |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10248579A Division JPS5627114A (en) | 1979-08-08 | 1979-08-10 | Liquid crystal display cell |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6068325A true JPS6068325A (en) | 1985-04-18 |
Family
ID=15449880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59148308A Pending JPS6068325A (en) | 1984-07-16 | 1984-07-16 | Thin film transistor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6068325A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5781254A (en) * | 1995-08-29 | 1998-07-14 | Lg Electronics Inc. | Active matrix LCD having a non-conductive light shield layer |
-
1984
- 1984-07-16 JP JP59148308A patent/JPS6068325A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5781254A (en) * | 1995-08-29 | 1998-07-14 | Lg Electronics Inc. | Active matrix LCD having a non-conductive light shield layer |
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