JPS6066174A - Method and device for detecting electron and ion superposed beam - Google Patents
Method and device for detecting electron and ion superposed beamInfo
- Publication number
- JPS6066174A JPS6066174A JP58172938A JP17293883A JPS6066174A JP S6066174 A JPS6066174 A JP S6066174A JP 58172938 A JP58172938 A JP 58172938A JP 17293883 A JP17293883 A JP 17293883A JP S6066174 A JPS6066174 A JP S6066174A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- electron
- detecting
- magnetic field
- scintillator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、例えば、計測分野特に高感度分析法である二
次イオン質量分析法と高分解細組β法としての電子顕微
鏡との複合化に必須な手段である電子とイオンの重畳ビ
ー11の検出方法および装置に関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention is applicable, for example, to the field of measurement, particularly to the combination of secondary ion mass spectrometry, which is a high-sensitivity analysis method, and electron microscopy, which is a high-resolution subassembly β method. The present invention relates to a method and apparatus for detecting a superimposed beam 11 of electrons and ions, which is an essential means.
従来荷電粒子検出方法どして第1図J′9よび第2図に
示すような方法が採用さJしていた。第1図は、シンチ
レータ4と光電子増倍管6を組合せた検出系を示したも
のであり、動作原理は、先ず荷電粒子をシンチレータで
受けて光に変換し、その光出力を高電子増倍管により増
倍して検出することにある。この検出器にイオンビーム
1と電T・ビーム2が同時に入射するとシンチレータに
おけるイオンと電子の発光効率が異なるため実質上は、
電子のみの検出器として働らくことになる。すなわちイ
オンのみの検出は困難である。たとえイオンと電子が同
時に検出できたとしても二次電子増倍管7を利用した従
来例を示したものである。この場合は、イオンおよび電
子のいずれも検出iiJ能であるが、両者の信号を独立
に区別して検出することは困難である。Conventionally, methods such as those shown in FIG. 1 and FIG. 2 have been adopted as charged particle detection methods. Figure 1 shows a detection system that combines a scintillator 4 and a photomultiplier tube 6.The principle of operation is that charged particles are first received by the scintillator and converted into light, and the light output is converted into light with high electron multiplication. The purpose is to amplify and detect using a tube. When ion beam 1 and electron beam 2 are simultaneously incident on this detector, the emission efficiency of ions and electrons in the scintillator is different, so in reality,
It will work as a detector for electrons only. In other words, it is difficult to detect only ions. This shows a conventional example in which a secondary electron multiplier tube 7 is used even if ions and electrons can be detected simultaneously. In this case, both ions and electrons can be detected, but it is difficult to distinguish and detect both signals independently.
このように従来の検出法では、電子とイオンを同時に検
出することが困難であるという欠点があった。As described above, conventional detection methods have the drawback that it is difficult to detect electrons and ions simultaneously.
〔発明の1−1的〕
本発明の目的は、イオン・電子重畳前n・1ビー11の
検出において、両者の強度変化を独立に且つ定量的に検
出できる検出方法および装置を提供することにある。[Object 1-1 of the invention] An object of the present invention is to provide a detection method and device that can independently and quantitatively detect changes in the intensity of n·1 B 11 before ion/electron superposition. be.
本発明では次の3つの現象を利用している。 The present invention utilizes the following three phenomena.
1)荷電粒子の物質内への透過性
2)発光効率の質量依存性
3)磁場偏向における質量依存性
すなわち検出器としてシンチレータを利用した場合、1
)の@象によりシンチレータ表面の導電層の厚さを適当
にすることにより、電子のみが透過発光に寄与するよう
にする。たとえイオン励起による発光があっても、2)
の効果により電子の発光に比較して極めて小さくできる
。イオン検出は3)の効果すなわち磁場偏向を利用して
イオンを電なと区別して検出する。このようにしてイオ
ン・電子重畳ビームにおける電子・イオン分P7I検出
を実現させる。1) Permeability of charged particles into substances 2) Mass dependence of luminous efficiency 3) Mass dependence of magnetic field deflection, that is, when a scintillator is used as a detector, 1
) By adjusting the thickness of the conductive layer on the surface of the scintillator appropriately, only electrons contribute to transmitted light emission. Even if there is light emission due to ion excitation, 2)
Due to this effect, the light emission can be made extremely small compared to the emission of electrons. Ion detection utilizes the effect of 3), that is, magnetic field deflection, to distinguish ions from electrons and detect them. In this way, detection of the electron/ion component P7I in the ion/electron superimposed beam is realized.
本発明を微小領域三次元M折法に適用した−・実施例を
示す。 第3図に実施例にJノけろl1Vi成を示す。An example will be shown in which the present invention is applied to a three-dimensional M-folding method in a small area. FIG. 3 shows the construction of J-no-Kero-11Vi as an example.
装置は、イオンマイクロアナライサと電子顕微鏡機能を
備えた複合構成をもっている。The device has a combined configuration that includes an ion microanalyzer and an electron microscope function.
・この装置は、主として一次イp’rン照躬系ずなわち
荷電粒子源10、集束偏向系11.試料室12、試料1
3、二次イオンおよび電子偏向用セクタ電N415、表
面に金属膜を付着させたシンチレータ19.シールドメ
ツシュ]7、光電子増倍管1G、電子俄筺11察川CR
T22、セクタ磁場18、イAン検出+t:Y 21
J、’iよびイオン像wAQ用CRT23より構成さJ
している、。- This device mainly consists of a primary irradiation system, namely a charged particle source 10, a focusing deflection system 11. Sample chamber 12, sample 1
3. Sector electrode N415 for secondary ion and electron deflection, scintillator with a metal film attached to the surface 19. Shield mesh] 7, photomultiplier tube 1G, electronic housing 11 Ogawa CR
T22, sector magnetic field 18, IA detection +t:Y 21
Consisting of CRT 23 for J, 'i and ion image wAQ
are doing,.
動作原理は次の通りである。正・負両用荷電オ゛・χ子
源lOとしては、デュオプラズマ1−ロンを採用した。The operating principle is as follows. A Duo Plasma 1-ron was used as the positive and negative charging source 1O.
この荷電粒子源はプラズマ型であり、負イオンを引出す
ように引出電圧を印加すると負イオンと電子14が同−
源より放出される。この状態で試料に負の高圧を印加す
ると、スパッタ現象により試料より負の二次イオンlお
よび二次電子2が同時に放出される。これらのイオン1
および電子2はセクタ電場15により図のような軌道を
通り、一部はシンチレータ19をたたき、一部はシンチ
レータ19の中心穴を通過し、セクタ磁場18に導入さ
れる。シンチレータJ9をたたいたイオン1はシンチレ
ータ表面の金属膜に吸収され、シンチレータ19を光ら
すことは困難である。一方シンチレータ19をたたく電
子2は、その透過性により、シンチレータ1gを光らせ
る。このようにして発生した電子による光20は、光電
子増倍管16で受けらJし、その出力が電子像観察用C
RT22の輝度変調信号として利用される。This charged particle source is of a plasma type, and when an extraction voltage is applied to extract negative ions, negative ions and electrons 14 are generated at the same time.
released from the source. When a negative high voltage is applied to the sample in this state, negative secondary ions 1 and secondary electrons 2 are simultaneously emitted from the sample due to a sputtering phenomenon. These ions 1
The electrons 2 follow the trajectory shown in the figure due to the sector electric field 15, some of which strike the scintillator 19, and some of which pass through the center hole of the scintillator 19 and are introduced into the sector magnetic field 18. The ions 1 that hit the scintillator J9 are absorbed by the metal film on the surface of the scintillator, making it difficult to illuminate the scintillator 19. On the other hand, the electrons 2 striking the scintillator 19 cause the scintillator 1g to glow due to its transparency. The light 20 generated by the electrons thus generated is received by a photomultiplier tube 16, and the output thereof is a C for electron image observation.
It is used as a brightness modulation signal for RT22.
一方シンチレータ19の中心穴を通過したイオンビーム
1は、セクタ磁場18に導入し、質量分離後、イオン検
出器21により特定イオンとして検出される。この出力
は、二次イオン像i察用CRT23の輝度変調信号とし
て利用さ才し、二次イオン像として二次元元索像として
利用される。On the other hand, the ion beam 1 that has passed through the center hole of the scintillator 19 is introduced into the sector magnetic field 18, and after mass separation is detected as a specific ion by the ion detector 21. This output is used as a brightness modulation signal for the CRT 23 for detecting secondary ion images, and is used as a two-dimensional original image as a secondary ion image.
本実施例では、−次荷電粒子ビー1114をCRT22
.23の偏向と同期させて走査させ、走査型゛4次イオ
ン像と二次電子像を独立画像としてnl察することに成
功した。この場合、−次電子ヒー11どイオンビームは
、磁場レンズと電場レンズ(省略)の組合せにより、そ
れぞ牡独\χに41s束させ、試料上でのビーム径は、
イオンおよび電子てそJしぞれ1μmおよび0.05μ
m程度である。すなわち電子利用により、試料表面の形
状を0.05μ用以下の像分解能で102察でき、その
形状変化にともなう質量スペクトル変化および特定−二
次イオン顛変化をダイナミックに解析できた。In this embodiment, the -order charged particle beam 1114 is transferred to the CRT 22.
.. By scanning in synchronization with the deflection of 23, we succeeded in observing the scanning type 4th ion image and secondary electron image as independent images. In this case, the -order electron heat 11 and other ion beams are each focused in a direction of 41 s by a combination of a magnetic field lens and an electric field lens (omitted), and the beam diameter on the sample is
1μm and 0.05μ for ion and electron beams, respectively
It is about m. That is, by using electrons, it was possible to observe the shape of the sample surface with an image resolution of 0.05μ or less, and dynamically analyze changes in the mass spectrum and specific secondary ion characteristics that accompany changes in the shape.
以上述べたように、本発明の電工・イオン重畳ビーム検
出方法を用いることにより、試料の三次元形態観察と利
時に各表面前に対応した元素分布情報がダイナミックに
得られ、試料の多次元評価(キャラクタリゼーション)
が可能になった。As described above, by using the electrician/ion superimposed beam detection method of the present invention, it is possible to observe the three-dimensional morphology of the sample and dynamically obtain elemental distribution information corresponding to each surface at a convenient time, allowing multidimensional evaluation of the sample. (characterization)
is now possible.
本発明の効果は次の通りである。 The effects of the present invention are as follows.
■)信号系にイオンおよび電子が重畳されている場合に
おいても両者を独立に検出することができる。これによ
りより確かな情報が得られる。(2) Even when ions and electrons are superimposed on the signal system, both can be detected independently. This provides more reliable information.
2)本発明を利用することにより、イオンビームの有す
るエツチング作用と微量分析能(二次イオン質量分析法
)および電子ビームの微小部観察能(電子顕微鏡法)を
利用して三次元形tA観奈と三次元元素濃度分布を同時
に且つ連続的に解析し、物質の多次元評価(キャラクタ
リゼーション)が可能になった。2) By utilizing the present invention, three-dimensional tA observation can be achieved by utilizing the etching action and microanalysis ability of the ion beam (secondary ion mass spectrometry) and the microscopic observation ability of the electron beam (electron microscopy). Simultaneously and continuously analyze the three-dimensional element concentration distribution and three-dimensional element concentration distribution, making it possible to perform multidimensional evaluation (characterization) of substances.
第1および第2図は、従来の検出方法を示す原理図であ
り、第3図は本発明の実施例を示す原理図である。
符号の説明1 and 2 are principle diagrams showing a conventional detection method, and FIG. 3 is a principle diagram showing an embodiment of the present invention. Explanation of symbols
Claims (1)
荷電粒子の物質内における透過発光性を利用して電子を
検出することを特徴とする電子・イオン重畳ビームの検
出方法。 2、六を有し電子・イオン重畳ビームを受けるシンチレ
ータと、前記ビーム内の電子により前記シンチレータが
発生した光を検知する手段と、前記シンチレータの穴を
通過した前記ビームを導入する磁場偏光手段と、前記磁
場偏向手段により分離された前記ビーム内のイオンを検
知する手段とからなることを特徴とする電子・イオン重
畳ビームの検出装置。[Claims] ■ Detecting ions using magnetic field deflection properties of charged particles;
A method for detecting an electron/ion superimposed beam, which is characterized by detecting electrons by utilizing the transmissive luminescence properties of charged particles within a substance. a scintillator that receives a superimposed beam of electrons and ions, a means for detecting light generated by the scintillator due to electrons in the beam, and a magnetic field polarizing means for introducing the beam that has passed through a hole in the scintillator. , means for detecting ions in the beam separated by the magnetic field deflecting means.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58172938A JPS6066174A (en) | 1983-09-21 | 1983-09-21 | Method and device for detecting electron and ion superposed beam |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58172938A JPS6066174A (en) | 1983-09-21 | 1983-09-21 | Method and device for detecting electron and ion superposed beam |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6066174A true JPS6066174A (en) | 1985-04-16 |
JPH0555832B2 JPH0555832B2 (en) | 1993-08-18 |
Family
ID=15951129
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58172938A Granted JPS6066174A (en) | 1983-09-21 | 1983-09-21 | Method and device for detecting electron and ion superposed beam |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6066174A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54123987A (en) * | 1978-03-20 | 1979-09-26 | Toshiba Corp | Radiation detector |
JPS58101458U (en) * | 1981-12-29 | 1983-07-09 | 株式会社島津製作所 | mass spectrometer |
-
1983
- 1983-09-21 JP JP58172938A patent/JPS6066174A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54123987A (en) * | 1978-03-20 | 1979-09-26 | Toshiba Corp | Radiation detector |
JPS58101458U (en) * | 1981-12-29 | 1983-07-09 | 株式会社島津製作所 | mass spectrometer |
Also Published As
Publication number | Publication date |
---|---|
JPH0555832B2 (en) | 1993-08-18 |
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