JPS6062112A - Polysilicone cvd equipment - Google Patents

Polysilicone cvd equipment

Info

Publication number
JPS6062112A
JPS6062112A JP17063483A JP17063483A JPS6062112A JP S6062112 A JPS6062112 A JP S6062112A JP 17063483 A JP17063483 A JP 17063483A JP 17063483 A JP17063483 A JP 17063483A JP S6062112 A JPS6062112 A JP S6062112A
Authority
JP
Japan
Prior art keywords
tube
reaction tube
gas
nitrogen
nitrogen gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17063483A
Other languages
Japanese (ja)
Inventor
Kunio Imai
邦夫 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP17063483A priority Critical patent/JPS6062112A/en
Publication of JPS6062112A publication Critical patent/JPS6062112A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)

Abstract

PURPOSE:To prevent infiltration of air into a reaction tube by constructing an equipment to introduce a neutral gas from the opposite direction of an inlet for inserting the material of a semiconductor element. CONSTITUTION:A neutral gas such as nitrogen is introduced from the opposite direction 10 of an inlet where the blank of semiconductor element such as an Si substrate is inserted into a reaction tube 1. In order to carry out this process firmly and rapidly, a switch 11 detects opening of a cover 7 of the reaction tube 1 and valves 9, 12, 13 are operated for opening automatically. This results in flowing of gas such as nitrogen externally from the inside of the tube 1 and quantity of air infiltrating into the tube 1 can extremely be reduced.

Description

【発明の詳細な説明】 本発明はポリシリコンＣＶＤ装置において、ＣＶＤ処理
を開始するにあ念り、通常摂氏数百度の温度に加熱され
、窒素ガス等中性気体で満たされている状態の同装置の
反応管の中へ処理しようとする基板等半導体素子材量を
挿入する際、空気の管内への流入による基板等の酸化を
防ぐ為の窒素ガス等中性気体の噴出に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention uses a polysilicon CVD apparatus in which, in order to start the CVD process, the polysilicon is heated to a temperature of several hundred degrees Celsius and filled with a neutral gas such as nitrogen gas. When inserting a semiconductor element material such as a substrate to be processed into a reaction tube of an apparatus, it is related to blowing out a neutral gas such as nitrogen gas to prevent oxidation of the substrate etc. due to air flowing into the tube.

従来この種の装置は第１図に示すごとく、内部の温度を
摂氏７００度程度まで上げられるように設計された反応
管１と内部を真空にする為の排気系８を主体とする装置
で、通常は常時高温に保たれＣＶＤ処理を開始する際は
管のふた７及びバルブ９等を手動によシ操作し、最初管
内を窒素ガス等で満たしておき基板を入れる際に挿入側
に近い部分５から９索ガス等を管内に噴出させて空気の
侵入を防ぐ構造のものだった。しかしこのような構造で
は充分でなく、挿入される基板等と一緒に入ってくる空
気は噴出されている窒素ガス等の一部が管の奥へ流れる
のと混ざり合い、結果として管内の酸素分圧が高くなる
。この結果加熱されるシリコン基板等の表面は、酸化し
重大な悪影響を受けることがある。Conventionally, this type of apparatus, as shown in Fig. 1, consists mainly of a reaction tube 1 designed to raise the internal temperature to about 700 degrees Celsius, and an exhaust system 8 for creating a vacuum inside. Normally, the temperature is kept at high temperature at all times, and when starting the CVD process, manually operate the tube lid 7 and valve 9, etc., and first fill the tube with nitrogen gas etc. When inserting the substrate, the part near the insertion side It was designed to prevent air from entering the pipe by ejecting gas from 5 to 9 lines into the pipe. However, this structure is not sufficient, and the air that comes in together with the inserted board etc. mixes with some of the nitrogen gas etc. that is being blown out and flows deep into the tube, resulting in the oxygen content inside the tube being reduced. Pressure increases. As a result, the heated surface of the silicon substrate or the like may be oxidized and seriously affected.

本発明の目的は空気の管内への侵入を防ぎ、かかる欠点
を克服することである。第２図に示すごと〈従来の方法
に加えて管の逆方向側１０から毎分数リットル程度窒素
ガス等を噴出させるようにする。またこの手順を確実か
っ尽速に行なう為に反応管のふた７−が開くとスイッチ
１１がこれを検出しパルプ９．１２．１’３　が開くよ
うに自動的に動作するものとし、窒素ガス等の流量は条
件に応じて調整できる構成とする。この結果管の内部か
ら外部へ向かう窒素ガス等の流れを生ずるので、管内部
へ入り込む空気の量を著しく減少せしめ、従来の管の入
り口付近において管の軸に垂直な方向への窒素ガス等の
噴出と併用＋不ことにより、挿入される基板等が最初に
窒素ガス等で洗われ、洗浄後の汚染されたガスは管外へ
排出される機構を有する。基板等の挿入が終了したらふ
た７を閉じれば、自動的に窒素の噴出が停止し管を排気
装置側８へ接続すれば、ＯＶＤ作業が開始できる。The aim of the invention is to prevent air from entering the tube and to overcome this drawback. As shown in FIG. 2, in addition to the conventional method, nitrogen gas or the like is spouted from the opposite side 10 of the pipe at a rate of several liters per minute. In order to carry out this procedure reliably and quickly, the switch 11 detects when the reaction tube lid 7- is opened and automatically operates to open the pulp 9.12.1'3. The flow rate can be adjusted according to the conditions. As a result, a flow of nitrogen gas, etc. from the inside of the tube to the outside is generated, which significantly reduces the amount of air entering the inside of the tube. In combination with and without jetting, the device has a mechanism in which the inserted substrate, etc. is first washed with nitrogen gas or the like, and the contaminated gas after washing is discharged outside the tube. After inserting the substrate, etc., close the lid 7 to automatically stop blowing out nitrogen, and connect the pipe to the exhaust device side 8 to start the OVD operation.

本発明の装置において窒素ガスを毎分７リツトル流した
場合と従来の装置を用いた場合との比較実験が行なわれ
た。Ｎ状態にしたシリコン基板上にポリシリコンをＯＶ
Ｄ成長させ、その上からイオン打込み装置により燐イオ
ンを１平方センチメートルあたり４　Ｘ　１０１５個打
込んだものの接合部の抵抗は、接合面積が４平方ミクロ
ンの場合でそれ３５Ω、１３．９にΩであった。゛これ
は、後者では劫記接合部分に酸化膜ができ、抵抗性接合
を阻み、前者では問題にならないまでに改善されたこと
を示し、本発明の有効性が立証された。A comparative experiment was conducted between the case where nitrogen gas was flowed at 7 liters per minute in the apparatus of the present invention and the case where a conventional apparatus was used. OV polysilicon on silicon substrate in N state
The resistance of the junction was 35 Ω when the junction area was 4 microns squared, and 13.9 Ω when the junction area was 4 microns square. Ta. ``This indicates that in the latter case, an oxide film was formed at the bonded portion and prevented the resistance bonding, whereas in the former case, the problem was improved to such an extent that it did not become a problem, thus proving the effectiveness of the present invention.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来のＯＶＤ装置を示す図、第２図は本発明に
本とづ（０’Ｖ　Ｄ装置の断面図を示す図である。 １′・・・・・・反応管 ２・・・・・・パルプ ３・・・・・・シリコン基板 ４・・・・・・ポート ５・・・・・・窒素ガス等噴出口 ６・・・・・・窒素ガス等流動方向 ７・・・・・・反応管のふた ８・・・・・・排気系への接続パイプ ９・・・・・・パルプまたは自動パルプ１０・・・・・
・窒素ガス等新噴出部 １１・・・・・・ふた開閉検出スイッチ１２・・・・・
・自動パルプ １３・・・・・・自動バ、ルブ 以　上 出願人　株式会社　諏訪精工台 代理人　弁理士　最上　務FIG. 1 is a diagram showing a conventional OVD device, and FIG. 2 is a diagram showing a cross-sectional view of the 0'VD device based on the present invention. 1'...Reaction tube 2... ...Pulp 3...Silicon substrate 4...Port 5...Nitrogen gas, etc. spout 6...Nitrogen gas, etc. flow direction 7... ... Reaction tube lid 8 ... Connection pipe to exhaust system 9 ... Pulp or automatic pulp 10 ...
・New spouting part 11 for nitrogen gas, etc. Lid opening/closing detection switch 12...
・Automatic pulp 13・・・Automatic pulp, lubricant and above Applicant Suwa Seikodai Co., Ltd. Agent Patent attorney Tsutomu Mogami

Claims (1)

【特許請求の範囲】[Claims] ポリシリコン形成用ＯＶＤ装置において、シリコン基板
等半導体素子の材量を挿入する入口とは逆の方向から窒
素その地中性気体を流入するように構成されたことを特
徴とするポリシリコンＣＶＤ装置。1. A polysilicon CVD apparatus for forming polysilicon, characterized in that the OVD apparatus is configured such that nitrogen or other underground gas is introduced from a direction opposite to an inlet into which a material for a semiconductor element such as a silicon substrate is inserted.
JP17063483A 1983-09-16 1983-09-16 Polysilicone cvd equipment Pending JPS6062112A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17063483A JPS6062112A (en) 1983-09-16 1983-09-16 Polysilicone cvd equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17063483A JPS6062112A (en) 1983-09-16 1983-09-16 Polysilicone cvd equipment

Publications (1)

Publication Number Publication Date
JPS6062112A true JPS6062112A (en) 1985-04-10

Family

ID=15908508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17063483A Pending JPS6062112A (en) 1983-09-16 1983-09-16 Polysilicone cvd equipment

Country Status (1)

Country Link
JP (1) JPS6062112A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62252930A (en) * 1986-04-25 1987-11-04 Mitsubishi Electric Corp Reduced pressure type chemical vapor growth apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52115185A (en) * 1976-03-24 1977-09-27 Hitachi Ltd Vapor phase growing apparatus
JPS5398775A (en) * 1977-02-09 1978-08-29 Hitachi Ltd Gas phase growth unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52115185A (en) * 1976-03-24 1977-09-27 Hitachi Ltd Vapor phase growing apparatus
JPS5398775A (en) * 1977-02-09 1978-08-29 Hitachi Ltd Gas phase growth unit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62252930A (en) * 1986-04-25 1987-11-04 Mitsubishi Electric Corp Reduced pressure type chemical vapor growth apparatus

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