JPS6058308B2 - Method for manufacturing titanium oxide film - Google Patents

Method for manufacturing titanium oxide film

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Publication number
JPS6058308B2
JPS6058308B2 JP8936978A JP8936978A JPS6058308B2 JP S6058308 B2 JPS6058308 B2 JP S6058308B2 JP 8936978 A JP8936978 A JP 8936978A JP 8936978 A JP8936978 A JP 8936978A JP S6058308 B2 JPS6058308 B2 JP S6058308B2
Authority
JP
Japan
Prior art keywords
acid
titanium oxide
group
oxide film
titanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8936978A
Other languages
Japanese (ja)
Other versions
JPS5515978A (en
Inventor
和利 舟橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teijin Ltd
Original Assignee
Teijin Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teijin Ltd filed Critical Teijin Ltd
Priority to JP8936978A priority Critical patent/JPS6058308B2/en
Publication of JPS5515978A publication Critical patent/JPS5515978A/en
Publication of JPS6058308B2 publication Critical patent/JPS6058308B2/en
Expired legal-status Critical Current

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  • Chemically Coating (AREA)
  • Chemical Vapour Deposition (AREA)

Description

【発明の詳細な説明】 本発明は酸化チタン膜の製造方法に関する。[Detailed description of the invention] The present invention relates to a method for manufacturing a titanium oxide film.

透明酸化チタン薄膜は高屈折率誘電体薄膜として種々の
用途、例えは透明導電性被膜又は選択光透過性被膜の成
分として利用されている。従来、これらの酸化チタン薄
膜は、例えば真空蒸着法、カソードスパッタリング法等
の物理的手段により形成されていた。
Transparent titanium oxide thin films are used as high refractive index dielectric thin films in various applications, such as as a component of transparent conductive coatings or selective light transmitting coatings. Conventionally, these titanium oxide thin films have been formed by physical means such as vacuum evaporation and cathode sputtering.

しかし、これらの方法は、均一厚さの薄膜を形成するの
が困難な点、更には生産性が低い点等の欠点があつた。
これらの欠点を改良する試みとして、アルキルチタネー
トを溶解した溶液を塗布し、加水分解、縮合せしめて酸
化チタン薄膜を形成せしめる方法が提案されているが、
アルキルチタネートの水や湿分に対する安定性が悪い為
に、アルキルチタネート溶液の塗布工程において均一透
明な塗布層を得ることが困難であり、この為に工程中の
湿気を厳しく管理した塗布工程が採用されているが、そ
れでも尚しばしば問題が発生し、目的とする堅牢な酸化
チタン薄膜を形成せしめるには非常な苦労を味わつてい
るのが現状である。
However, these methods have drawbacks such as difficulty in forming a thin film of uniform thickness and low productivity.
In an attempt to improve these drawbacks, a method has been proposed in which a solution containing an alkyl titanate is applied, hydrolyzed and condensed to form a titanium oxide thin film.
Due to the poor stability of alkyl titanates against water and moisture, it is difficult to obtain a uniform and transparent coating layer during the coating process of alkyl titanate solutions.For this reason, a coating process that strictly controls moisture during the process is adopted. However, problems still occur frequently, and it is currently extremely difficult to form the desired robust titanium oxide thin film.

本発明者はかかる状況に鑑み、水分の影響を伴わない酸
化チタン薄膜層の形成に関し鋭意研究するにおいて、チ
タン原子上の電子密度を減少せしめることにより水分に
よる不要の加水分解を防止しうるとの仮定に立ち研究を
すすめた所、アルキルチタネート系化合物のチタン原子
上にアルコキシ基より電気陰性度の大なる原子及ひ/又
は基を配置せしめることにアルキルチタネート系化合物
の水分に対する安定性が向上することを見出し、本発明
に到達した。
In view of this situation, the inventor of the present invention conducted intensive research on the formation of a titanium oxide thin film layer that is not affected by moisture, and found that unnecessary hydrolysis due to moisture could be prevented by reducing the electron density on titanium atoms. After conducting research based on the hypothesis, it was found that the stability of alkyl titanate compounds against moisture is improved by arranging an atom and/or group with higher electronegativity than an alkoxy group on the titanium atom of the alkyl titanate compound. They discovered this and arrived at the present invention.

即ち本発明は、下記一般式〔I〕 Z1、Ti−〜0]ji−R・・・・・・〔I〕(OR
)m〔但し、式中Xは基−ORより電気陰性度の大なる
原子及び/又は基てあり、Rは炭素原子数1〜20個の
アルキル基であり、Zは基−OR又は基−ORより電気
陰性度の大なる原子若しくは基であり、l及びmは0又
は2であつて1+m=2を満足し、nは1〜30の整数
である。
That is, the present invention provides the following general formula [I] Z1, Ti-~0]ji-R...[I](OR
)m[However, in the formula, It is an atom or group with higher electronegativity than OR, l and m are 0 or 2 and satisfy 1+m=2, and n is an integer of 1 to 30.

またn個のl(5mはΣl/Σm=0.1〜2.5を満
足するものとする。〕で表わされるチタン化合物を加熱
処理して形成せしめることを特徴とする酸化チタン膜の
製造方法である。
Further, a method for producing a titanium oxide film, characterized in that the titanium compound represented by n l (5 m satisfies Σl/Σm = 0.1 to 2.5) is formed by heat treatment. It is.

上記一般式〔1〕で表わされるチタン化合物について更
に詳細に説明する。Xは前記の如く、基−0Rより電気
陰性度の大なる原子又は基であり、n個のXは同一でも
よく異なつていてもよい。
The titanium compound represented by the above general formula [1] will be explained in more detail. As described above, X is an atom or group having a higher electronegativity than the group -0R, and the n X's may be the same or different.

かかるXとしては、通常アルコールHORより強い酸性
を呈する化合物の残基が挙げられる。より好ましいXと
しては、有機酸及び無機酸の残基があげられR″COO
−, /ClO4−,B4O7等を挙げること
ができる。
Examples of such X include residues of compounds that normally exhibit stronger acidity than alcohol HOR. More preferable examples of X include residues of organic acids and inorganic acids, such as R″COO
-, /ClO4-, B4O7, etc. can be mentioned.

\なおXの中で結合手が2ケ以上存在するも
のは、同一分子内又は異分子間のTi原子と結合して、
網状化することができる。
\If there are two or more bonds in X, it will bond with Ti atoms within the same molecule or between different molecules,
Can be reticulated.

上記においてR″は特に限定はしないが、反応性及び立
体障害の点より炭素原子数6個以下の有機基が好ましく
、更に好ましくは直鎖のものである。n個のXは同一で
もよく異つていてもよい。又、式〔1〕中の−Rはアル
キル基であつて、炭素原子数としては1〜加個のものが
好ましく、特に炭素原子数2〜m個のものが好ましい。
In the above, R'' is not particularly limited, but from the viewpoint of reactivity and steric hindrance, it is preferably an organic group having 6 or less carbon atoms, and more preferably a straight chain. n X's may be the same or different. In addition, -R in formula [1] is an alkyl group, preferably having 1 to 5 carbon atoms, particularly preferably 2 to m carbon atoms.

かかる基として例えばエチル,プロピル,ブチル等が挙
げられる。(Nxm+1)個の−Rは同一でもよく異な
つていてもよい。Zは前記の通りであつて、Xにおいて
述べた基か−0Rである。
Examples of such groups include ethyl, propyl, butyl, and the like. (Nxm+1) -Rs may be the same or different. Z is as described above and is the group mentioned in X or -0R.

又、l及びmはO又は1又は2であり、1+m=2を満
足するものである。又n量体にあつては、n個のlとm
はΣ1/Σm=0.1〜2.5を満足するものである。
Σl/Σmがこの範囲より小さいとチタン化合物の安定
性があまり向上せず塗膜が困難となり、この範囲を越え
ると形成された酸化チタン薄膜の性能が低下する。nは
1〜30の整数である。nの値は単一でなくてもよいが
、nの分布は25以下に最大値を有するものであること
が塗工操作上好ましい。前記式〔1〕で表わされるチタ
ン化合物は、その製造法により限定されるものではない
が、該チタン化合物の容易な製造方法としては、アルキ
ルチタネートにx成分を有する酸を反応させる方法が挙
げられる。
Further, l and m are O, 1, or 2, and satisfy 1+m=2. In addition, in the case of n-mers, n l and m
satisfies Σ1/Σm=0.1 to 2.5.
If Σl/Σm is smaller than this range, the stability of the titanium compound will not improve much and it will be difficult to form a coating, and if it exceeds this range, the performance of the formed titanium oxide thin film will deteriorate. n is an integer from 1 to 30. Although the value of n does not have to be single, it is preferable for the distribution of n to have a maximum value of 25 or less in terms of coating operation. The titanium compound represented by the formula [1] is not limited by its manufacturing method, but an easy method for manufacturing the titanium compound includes a method of reacting an alkyl titanate with an acid having the component x. .

この際に式〔1〕中のlおよびmは反応に使用される酸
の量を調節することにより制御することが多くの場合可
能である。かかる反”応に適用しうるアルキルチタネー
トは、一般式TipOqRr〔但し、Rは前記の通りで
あり、P,q及びrは正の整数である。〕で表わされる
。かかるアルキルチタネートのうちP,q及びrが下記
三式を満足するものが、本発明に利用するのには好都合
である。
In many cases, l and m in formula [1] can be controlled by adjusting the amount of acid used in the reaction. Alkyl titanates applicable to such a reaction are represented by the general formula TipOqRr [wherein R is as described above, and P, q, and r are positive integers]. Among such alkyl titanates, P, Those in which q and r satisfy the following three formulas are convenient for use in the present invention.

アルキルチタネートに反応せしめるべき酸としては、前
記のx成分を提供しうる化合物であつて、例えば(1)
フェノール,チオフェノール (Ii)ギ酸,酢酸,プロピオン酸,酪酸,イソ酪酸,
吉草酸,ウンデカン酸,オレイン酸,シクロヘキサンカ
ルボン酸,モノクロル酢酸,安息香酸,蓚酸,コハク酸
,アジピン酸(Ili)塩化水素,臭化水素,硫酸,リ
ン酸,ポリリン酸,ホウ酸,過塩素酸,ベンゼンスルホ
ン酸が挙げられるが、就中(Ii)及び(IiOに挙げ
たものが好ましく、特に沸点の低いものが望ましく、ギ
酸,酢酸,プロピオン酸,酪酸,塩化水素が好ましい。
The acid to be reacted with the alkyl titanate is a compound capable of providing the above-mentioned component x, such as (1)
Phenol, thiophenol (Ii) formic acid, acetic acid, propionic acid, butyric acid, isobutyric acid,
Valeric acid, undecanoic acid, oleic acid, cyclohexanecarboxylic acid, monochloroacetic acid, benzoic acid, oxalic acid, succinic acid, adipic acid (Ili), hydrogen chloride, hydrogen bromide, sulfuric acid, phosphoric acid, polyphosphoric acid, boric acid, perchloric acid , benzenesulfonic acid, among which those listed under (Ii) and (IiO) are preferred, those with a low boiling point are particularly preferred, and formic acid, acetic acid, propionic acid, butyric acid, and hydrogen chloride are preferred.

また、上記方法の他にチタンのハロゲン化物のハロゲン
原子の一部をアルコキシ基で置換して合成する方法も挙
けられる。
In addition to the above-mentioned method, there is also a method of synthesizing a titanium halide by substituting a part of the halogen atoms with an alkoxy group.

前記式〔1〕で表わされるチタン化合物から酸化チタン
膜を形成せしめるには、通常1種又は2種以上の該チタ
ン化合物を適当な溶剤に溶解せしめて溶液となし、該溶
液を適当な基材上に流舐して液膜を形成せしめ、しかる
のち湿分の存在下又は非存在下で加熱することにより達
成することがてきる。
In order to form a titanium oxide film from the titanium compound represented by the above formula [1], one or more of the titanium compounds are usually dissolved in a suitable solvent to form a solution, and the solution is applied to a suitable base material. This can be achieved by pouring it onto the surface to form a liquid film and then heating it in the presence or absence of moisture.

湿分の要求量はチタン化合物の種類により変化する。又
、副生物の除去を効率的に行う為通常は空気や不活性ガ
スの気流中で加熱される。かかる溶剤としては、脂肪族
,脂環族,芳香族,複素環族の溶剤が広く適用でき、又
アルコール,ケトン,エステル,エーテル等の溶剤も適
用しうる。かかる溶剤の例としては、ヘキサン,ヘプタ
ン,シクロヘキサン,メチルシクロヘキサン,ベンゼン
,トルエン,キシレン,メタノール,エタノール,イソ
プロピルアルコール,プロピルアルコール,ブタノール
,シクロヘキサノール,テトラヒドロフラン,ジオキサ
ン,アセトン,メチルエチルケトン,酢酸エチル,酢酸
ブチル,クロロホルム,メチルセロソンブ等が挙げられ
、これらは1種又は2種以上の混合物として使用しうる
Moisture requirements vary depending on the type of titanium compound. Further, in order to efficiently remove by-products, it is usually heated in a stream of air or inert gas. As such a solvent, a wide range of aliphatic, alicyclic, aromatic, and heterocyclic solvents can be used, and solvents such as alcohols, ketones, esters, and ethers can also be used. Examples of such solvents include hexane, heptane, cyclohexane, methylcyclohexane, benzene, toluene, xylene, methanol, ethanol, isopropyl alcohol, propyl alcohol, butanol, cyclohexanol, tetrahydrofuran, dioxane, acetone, methyl ethyl ketone, ethyl acetate, butyl acetate. , chloroform, methylcellosomb, etc., and these may be used alone or as a mixture of two or more.

又、所望する酸化チタン膜の条件(例えば基材への接着
性,又は自立膜形成)により溶剤や添加剤は適宜選択さ
れる。又、チタン化合物の濃度も目的により変化しうる
が、通常0.5〜30Wt%が適用され、薄膜形成等に
あつては1〜10Wt%が好ましい。流舐は従来公知の
手段がいずれも適用でき、加熱処理は通常90〜220
゜Cで10秒〜6紛で目的を達成しうる。以下、実施例
を挙げて更に説明する。
Further, the solvent and additives are appropriately selected depending on the desired conditions of the titanium oxide film (for example, adhesion to the substrate or formation of a self-supporting film). Further, the concentration of the titanium compound may also vary depending on the purpose, but 0.5 to 30 Wt% is usually applied, and 1 to 10 Wt% is preferable when forming a thin film. Any conventionally known means can be applied for the licking, and the heat treatment is usually performed at a temperature of 90 to 220
The objective can be achieved in 10 seconds to 6 seconds at °C. Hereinafter, further explanation will be given with reference to Examples.

実施例1〜4 下記式 〔但し、Rは−CH2・CH2・CH3又は−CH2・
CH2・CH2・CH3であり、nは4又は10である
Examples 1 to 4 The following formula [where R is -CH2.CH2.CH3 or -CH2.
CH2, CH2, CH3, and n is 4 or 10.

R及びnの組合せは第1表参照。〕で表わされるアルキ
ルチタネートを、所定溶媒に3.5Wt%になるように
溶解し、所定量の酸HX(Xは第1表参照。
See Table 1 for combinations of R and n. ] was dissolved in a predetermined solvent to a concentration of 3.5 wt%, and a predetermined amount of acid HX (see Table 1 for X) was dissolved.

)を常温〜50℃の温度で、攪拌下に滴下し、反応させ
て下記式〔但し、X,R,Z,I,m,nは第1表に示
す。
) was added dropwise under stirring at a temperature of room temperature to 50° C., and reacted to form the following formula [where X, R, Z, I, m, and n are shown in Table 1].

尚、I,mは平均値である。〕で表わされるチタン化合
物の溶液を得た。
Note that I and m are average values. ] A solution of a titanium compound represented by the following formula was obtained.

この溶液をパーコーターで数ミクロンの厚さに、アルミ
ニューム箔,及びポリエチレンテレフタレートフィルム
上に塗布し、140℃の熱風乾燥器中で5分間加熱処理
して酸化チタン薄膜を形成させた。
This solution was coated on aluminum foil and polyethylene terephthalate film to a thickness of several microns using a percoater, and heated in a hot air dryer at 140° C. for 5 minutes to form a titanium oxide thin film.

アルミニューム箔上に塗布した塗布液の白濁の有無で、
塗膜の良否を判定し、又同上に形成された酸化チタン薄
膜を用いて、薄膜中の炭素含量を測定した。
Depending on the presence or absence of cloudiness of the coating liquid applied on the aluminum foil,
The quality of the coating film was determined, and the carbon content in the thin film was measured using the titanium oxide thin film formed thereon.

Claims (1)

【特許請求の範囲】 1 下記一般式 ▲数式、化学式、表等があります▼ 〔但し、式中Xは基−ORより電気陰性度の大なる原子
及び/又は基であり、Rは炭素原子数1〜20個のアル
キル基であり、Zは基−OR又は基−ORより電気陰性
度の大なる原子若しくは基であり、1及びmは0又は1
又は2であつてl+m=2を満足し、nは1〜30の整
数である。 またn個のlとmはΣl/Σm=0.1〜2.5を満足
するものとする。〕で表わされるチタン化合物を加熱処
理して形成せしめることを特徴とする酸化チタン膜の製
造方法。
[Claims] 1 The following general formula ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ [However, in the formula, X is an atom and/or group with higher electronegativity than the group -OR, and R is the number of carbon atoms. 1 to 20 alkyl groups, Z is a group -OR or an atom or group with higher electronegativity than the group -OR, and 1 and m are 0 or 1
or 2, satisfying l+m=2, and n is an integer from 1 to 30. It is also assumed that n l's and m's satisfy Σl/Σm=0.1 to 2.5. ] A method for producing a titanium oxide film, which comprises forming a titanium compound represented by the following by heat treatment.
JP8936978A 1978-07-24 1978-07-24 Method for manufacturing titanium oxide film Expired JPS6058308B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8936978A JPS6058308B2 (en) 1978-07-24 1978-07-24 Method for manufacturing titanium oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8936978A JPS6058308B2 (en) 1978-07-24 1978-07-24 Method for manufacturing titanium oxide film

Publications (2)

Publication Number Publication Date
JPS5515978A JPS5515978A (en) 1980-02-04
JPS6058308B2 true JPS6058308B2 (en) 1985-12-19

Family

ID=13968771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8936978A Expired JPS6058308B2 (en) 1978-07-24 1978-07-24 Method for manufacturing titanium oxide film

Country Status (1)

Country Link
JP (1) JPS6058308B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6471718A (en) * 1987-09-14 1989-03-16 Hitachi Metals Ltd Pipe fitting with outer surface coated with resin

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176034U (en) * 1981-05-01 1982-11-06
JPS6184380A (en) * 1984-10-01 1986-04-28 Nitto Kasei Kk Formation of conductive oxide tin film on base body
TW462977B (en) * 1996-06-28 2001-11-11 Toray Industries Resin compositions, processes for producing thereby, and process for producing titanium oxide

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6471718A (en) * 1987-09-14 1989-03-16 Hitachi Metals Ltd Pipe fitting with outer surface coated with resin

Also Published As

Publication number Publication date
JPS5515978A (en) 1980-02-04

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