JPS6057238B2 - Amorphous semiconductor switch element - Google Patents
Amorphous semiconductor switch elementInfo
- Publication number
- JPS6057238B2 JPS6057238B2 JP51088573A JP8857376A JPS6057238B2 JP S6057238 B2 JPS6057238 B2 JP S6057238B2 JP 51088573 A JP51088573 A JP 51088573A JP 8857376 A JP8857376 A JP 8857376A JP S6057238 B2 JPS6057238 B2 JP S6057238B2
- Authority
- JP
- Japan
- Prior art keywords
- amorphous semiconductor
- semiconductor
- threshold voltage
- switch element
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Thermally Actuated Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
【発明の詳細な説明】 本発明は非晶質半導体スイッチ素子に関する。[Detailed description of the invention] The present invention relates to an amorphous semiconductor switching element.
非晶質半導体、たとえはＳｉ１２、Ｇｅ１Ｏ、ＡＳ３
Ｏ、Ｔｅ４８の如きは、第１図に示す様な電流−電圧特
性、いわゆるスイッチ特性を持つていることは良く知ら
れている。このスイッチ現象でスイッチを開始する電圧
、即ち閾値電圧は第２図に示す様に温度上昇と共にその
値が低くなることも又知られており、斯る閾値電圧の温
度依存性は、非晶質半導体を一般のスイッチ素子として
使用する場合の大きな障害となつている。 従つて本発
明目的は、周囲温度に影響されすに一定の電圧でスイッ
チすることのできる非晶質半導体スイッチ素子を提供す
るにある。Amorphous semiconductors, such as Si12, Ge1O, AS3
It is well known that materials such as O and Te48 have current-voltage characteristics, so-called switch characteristics, as shown in FIG. It is also known that the voltage that initiates the switch in this switching phenomenon, that is, the threshold voltage, decreases as the temperature rises, as shown in Figure 2, and the temperature dependence of the threshold voltage is This is a major obstacle when using semiconductors as general switching elements. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide an amorphous semiconductor switching element that can be switched at a constant voltage regardless of ambient temperature.
第３図は本発明実施例の概念図を示し、１は非晶質半
導体、２、３は該半導体を挾持する電極、 ４、５は電
極２、３に夫々接続されたリード線、６は非晶質半導体
１、電極２、３及びリード線４、５を保護し固定するた
めのガラスなどからなるケース、７は非晶質半導体１と
並列配置になる様にリード線４、５間に接続され、且非
晶質半導体１の近傍に置かれた抵抗発熱体である。FIG. 3 shows a conceptual diagram of an embodiment of the present invention, in which 1 is an amorphous semiconductor, 2 and 3 are electrodes that sandwich the semiconductor, 4 and 5 are lead wires connected to the electrodes 2 and 3, respectively, and 6 is an amorphous semiconductor. A case 7 is made of glass or the like to protect and fix the amorphous semiconductor 1, electrodes 2 and 3, and lead wires 4 and 5, and a case 7 is placed between the lead wires 4 and 5 so as to be arranged in parallel with the amorphous semiconductor 1. This is a resistance heating element connected to the amorphous semiconductor 1 and placed near the amorphous semiconductor 1.
上記スイッチ素子に於いて、非晶質半導体１の閾値電
圧はスイッチ素子の使用温度範囲の上限温度以上に於け
る値に設定されている。In the above switch element, the threshold voltage of the amorphous semiconductor 1 is set to a value above the upper limit temperature of the operating temperature range of the switch element.
例えば使用温度範囲をＯ℃〜７０℃とし、希望する閾値
電圧を１００Ｖとすると、温度８０℃に於ける非晶質半
導体１の閾値電圧が１００Ｖになるべく設定される。即
ち該半導体１の閾値電圧は８０゜Ｃより低い温度で１０
０Ｖより高い値となる。尚斯る閾値電圧の設定は電極２
、３間の距離や非晶質半導体１の組成を選択することに
より行ない得る。そして抵抗発熱体７はリード線４、５
間に電圧が印加された場合発熱して非晶質半導体１の温
度を高め、その閾値電圧を低下せしめるのであるが、上
記使用温度内’の周囲温度に於いて、上記印加電圧が１
００Ｖ以上の場合にのみ、非晶質半導体１の温度を８０
℃以上まで上昇でき、その閾値電圧を１００Ｖ以下に低
下せしめる様に発熱体７の発熱量が設定されている。尚
斯る発熱量の設定は発熱体１の抵抗値、形・状、更には
スイッチ素子全体の熱容量などから行い得る。従つて上
記スイッチ素子によれば、１００Ｖより低い電圧が印加
されても、上記使用温度範囲にある限り周囲温度に関係
なく、非晶質半導体１の温度を８０℃以上に高めること
はできず、従つてスイッチ素子は導通することはなく、
１００Ｖ以上の電圧が印加されると、上記使用温度範囲
にある限り周囲温度に関係なく非晶質半導体１の温度が
８０℃以上に上昇してその閾値電圧が１００Ｖ以下に低
下し、従つて例えは印加電圧が１００Ｖの時には８０℃
に達した時点でスイッチ素子が導通する。For example, if the operating temperature range is 0°C to 70°C and the desired threshold voltage is 100V, the threshold voltage of the amorphous semiconductor 1 at a temperature of 80°C is set to 100V as much as possible. That is, the threshold voltage of the semiconductor 1 is 10 at a temperature lower than 80°C.
The value is higher than 0V. The threshold voltage is set using electrode 2.
, 3 and the composition of the amorphous semiconductor 1. The resistance heating element 7 is connected to the lead wires 4 and 5.
When a voltage is applied between them, heat is generated, raising the temperature of the amorphous semiconductor 1 and lowering its threshold voltage.
00V or more, the temperature of the amorphous semiconductor 1 is set to 80V.
The amount of heat generated by the heating element 7 is set so that the voltage can rise to 100 V or higher and the threshold voltage can be lowered to 100 V or lower. The amount of heat generated can be set based on the resistance value and shape of the heating element 1, the heat capacity of the entire switch element, etc. Therefore, according to the switch element, even if a voltage lower than 100V is applied, the temperature of the amorphous semiconductor 1 cannot be raised to 80° C. or higher, regardless of the ambient temperature, as long as the operating temperature is within the above operating temperature range. Therefore, the switch element will not conduct,
When a voltage of 100V or more is applied, the temperature of the amorphous semiconductor 1 rises to 80°C or more regardless of the ambient temperature as long as it is within the above operating temperature range, and its threshold voltage decreases to 100V or less. is 80℃ when the applied voltage is 100V
The switch element becomes conductive at the point in time when .
即ちスイッチ素子としての閾値電圧は周囲温度によらず
常に１００Ｖ一定となる。第４図乃至第６図は第３図の
抵抗発熱体７の具体的構造を示すもので、何れの場合も
、抵抗発熱体７は金属薄膜からなり、第４図ではケース
６の内面全面に、第５図ではケース６の外面に全面に第
６図ではケース６の外面にら旋状に夫々被着され、ケー
ス６の両端にてリード線４，５に結合している。That is, the threshold voltage as a switching element is always constant at 100V regardless of the ambient temperature. 4 to 6 show the specific structure of the resistance heating element 7 shown in FIG. 3. In each case, the resistance heating element 7 is made of a metal thin film, and in FIG. , are applied to the entire outer surface of the case 6 in FIG. 5 and in a spiral shape to the outer surface of the case 6 in FIG. 6, and are connected to the lead wires 4 and 5 at both ends of the case 6.
かくして本発明によれば、２端子型非晶質半導体スイッ
チ素子に於いて、周囲温度によらず閾値電圧を一定にす
ることができ高い信頼性を得ることができる。Thus, according to the present invention, in a two-terminal amorphous semiconductor switch element, the threshold voltage can be made constant regardless of the ambient temperature, and high reliability can be obtained.
第１図、第２図は非晶質半導体の特性曲線図、第３図は
本発明実施例の概念的断面図、第４図乃至第６図は夫々
本発明の異なる実施例を示し、第４図、第５図は断面図
、第６図は側面図である。
１・・・非晶質半導体、２，３・・・電極、７・・・抵
抗発熱体。1 and 2 are characteristic curve diagrams of an amorphous semiconductor, FIG. 3 is a conceptual cross-sectional view of an embodiment of the present invention, and FIGS. 4 to 6 respectively show different embodiments of the present invention. 4 and 5 are cross-sectional views, and FIG. 6 is a side view. 1... Amorphous semiconductor, 2, 3... Electrode, 7... Resistance heating element.
Claims (1)
れた抵抗発熱体を上記半導体の近傍に配してスイッチ素
子を構成し、上記半導体の閾値電圧を上記素子の使用温
度範囲の上限以上の所定温度に於ける値に設定すると共
に、上記半導体に上記閾値電圧以上の電圧が印加された
場合にのみ上記半導体の温度を上記所定温度以上に上昇
できるべく上記発熱体の発熱量を設定してなる非晶質半
導体スイッチ素子。1 A switching element is constructed by arranging an amorphous semiconductor sandwiched between a pair of electrodes and a resistance heating element connected in parallel to the semiconductor, and the threshold voltage of the semiconductor is set within the operating temperature range of the element. In addition to setting the value at a predetermined temperature above the upper limit, the heat generation amount of the heating element is set so that the temperature of the semiconductor can be raised to above the predetermined temperature only when a voltage higher than the threshold voltage is applied to the semiconductor. Amorphous semiconductor switch element made by setting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51088573A JPS6057238B2 (en) | 1976-07-22 | 1976-07-22 | Amorphous semiconductor switch element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51088573A JPS6057238B2 (en) | 1976-07-22 | 1976-07-22 | Amorphous semiconductor switch element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5313368A JPS5313368A (en) | 1978-02-06 |
| JPS6057238B2 true JPS6057238B2 (en) | 1985-12-13 |
Family
ID=13946593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51088573A Expired JPS6057238B2 (en) | 1976-07-22 | 1976-07-22 | Amorphous semiconductor switch element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6057238B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS499274A (en) * | 1972-05-12 | 1974-01-26 |
-
1976
- 1976-07-22 JP JP51088573A patent/JPS6057238B2/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS499274A (en) * | 1972-05-12 | 1974-01-26 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5313368A (en) | 1978-02-06 |
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