JPS6052822A - Laser device - Google Patents
Laser deviceInfo
- Publication number
- JPS6052822A JPS6052822A JP58161576A JP16157683A JPS6052822A JP S6052822 A JPS6052822 A JP S6052822A JP 58161576 A JP58161576 A JP 58161576A JP 16157683 A JP16157683 A JP 16157683A JP S6052822 A JPS6052822 A JP S6052822A
- Authority
- JP
- Japan
- Prior art keywords
- mirror
- laser
- laser light
- light
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Lasers (AREA)
- Laser Beam Processing (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
(1) 発明の属する分野
本発明はレーザ装置に係シ、特に被照射基板の高精度な
位置合わせが可能なレーザCVD装置に関する。DETAILED DESCRIPTION OF THE INVENTION (1) Field of the Invention The present invention relates to a laser device, and more particularly to a laser CVD device capable of highly accurate positioning of a substrate to be irradiated.
■ 従来技術の説明
レーザCVD技術は、近年光エネルギーを利用し九〇V
D技術の一つとして注目されている。この方法はシリコ
ン基板などの基板をモノシ゛ラン(5IH4)などの雰
囲気中に置き、アルゴンレーザなどで局所的に加熱して
基板の酸化g (5in2)上にアモルファスシリコン
膜を選択的に形成するものである。■ Explanation of conventional technology Laser CVD technology uses light energy in recent years to
It is attracting attention as one of the D technologies. In this method, a substrate such as a silicon substrate is placed in an atmosphere of monosilane (5IH4), etc., and an amorphous silicon film is selectively formed on the oxidized substrate by heating locally with an argon laser or the like. be.
従来、とのレーザCVD装置は第1図に示すような構成
となっていた。すなわち、レーザ発振器1からのレーザ
光は側内プリズム2.1/4波長板3を経てXステージ
18上のプリズム4でその方向が変えられ、しかる後に
Yステージ19上に導びかれてアぶ一チャ5を経てバー
7ミラー6で99チ程度のレーザ光が反射されてメカニ
カルシャッタ7、投影レンズ8を経てチャンバ9内のシ
リコン基板10上に照射される。その際にシリコン基板
10上でのレーザ光の位置およびスポット径の制御(Z
軸方向)の制御は極めて重要であるので、シリコン基板
10上に予め位置合わせマークを設け、レーザ照射の際
にXステージ18、Yステージ19、投影レンズ8を制
御してスポットの調整を行なう。Conventionally, a laser CVD apparatus has a configuration as shown in FIG. That is, the laser beam from the laser oscillator 1 passes through the inner prism 2 and 1/4 wavelength plate 3, has its direction changed by the prism 4 on the X stage 18, and is then guided onto the Y stage 19 where it is ablated. Approximately 99 beams of laser light are reflected by the bar 7 mirror 6 after passing through the shutter 5, pass through the mechanical shutter 7 and the projection lens 8, and are irradiated onto the silicon substrate 10 in the chamber 9. At this time, the position and spot diameter of the laser beam on the silicon substrate 10 are controlled (Z
Since control in the axial direction is extremely important, alignment marks are provided in advance on the silicon substrate 10, and the X stage 18, Y stage 19, and projection lens 8 are controlled during laser irradiation to adjust the spot.
この調整は、ハーフミラ−6を透過したシリコン基板1
0からの反射光を第1のミラー11、集光レンズ12、
第2のミラー13、マイクロスコープレンメ14に導び
き、テレビカメラ15でそのパターン、すなわち位置合
わせマークのパターンを検出することによシ行なう。こ
こで、この反射光を作る光源として前記レーザ光を用い
ると入射光と反射光のおのおのもしくは相互の散乱光に
よってスペックルパターンなどを生じ、第3図のように
位置合わせパターンが見えなくなシ、したがって高精度
な位置合わせが困難であった。This adjustment is performed using the silicon substrate 1 that has passed through the half mirror 6.
The reflected light from the first mirror 11, the condensing lens 12,
This is done by guiding the alignment marks to a second mirror 13 and a microscope lens 14, and detecting the pattern, that is, the pattern of alignment marks, with a television camera 15. Here, if the laser beam is used as a light source for creating this reflected light, a speckle pattern or the like is generated due to the scattered light of the incident light and the reflected light, or each other, and the alignment pattern becomes invisible as shown in Figure 3. , therefore, highly accurate positioning was difficult.
そこで、Yステージ上にさらに白色光源16、可動ミラ
ー17を設けて、位置合わせの際にこの可動ミラー17
を動かしてハーフミラ−乙に白色光を入射きせることに
よって位置合ゎせを行なっていた。しかしながら、この
ような方法では不所望な発熱による位置精度の低下、位
置合わせ用の光とCVDに使用する光の波長の違いなど
による精度の低下が生じるので、高精度なレーザCVD
装置は実現できなかった。Therefore, a white light source 16 and a movable mirror 17 are further provided on the Y stage, and the movable mirror 17 is
Alignment was performed by moving the mirror so that white light was incident on half mirror A. However, with this method, the positioning accuracy decreases due to undesired heat generation and the difference in wavelength between the alignment light and the light used for CVD.
The device could not be realized.
(3) 発明の目的
本発明の目的は、かかる従来の欠点のない、容易に高精
度な位置合わせが可能なレーザ装置を提供することにあ
る。(3) Object of the Invention An object of the present invention is to provide a laser device that does not have the above-mentioned drawbacks of the conventional laser device and can easily perform highly accurate positioning.
(4) 発明の特徴
本発明の特徴は、レーザ光を所定の導光路を経て基板上
に照射するレーザ装置において、酌記導光路に前記レー
ザ光のコピーレンズを低下せしめる手段が設けられてい
るレーザ装置にろる。そして、この変換手段はレーザビ
ームの各点での位相を分布きせる散乱板、たとえば任意
の各点で厚みが異なるガラス板(すりガラス)、所定の
パターンにカットされたガラス板、網、特に金属網など
でろることが好ましい。さらにこの散乱板を振動させて
、位相の乱れを平均化することが好ましい。(4) Features of the invention A feature of the present invention is that in a laser device that irradiates laser light onto a substrate through a predetermined light guide path, a means for lowering a copy lens for the laser light is provided in the light guide path. Go to the laser device. This conversion means can be a scattering plate that distributes the phase of the laser beam at each point, such as a glass plate (ground glass) with a different thickness at each arbitrary point, a glass plate cut into a predetermined pattern, a mesh, especially a metal mesh. It is preferable to write something like this. Furthermore, it is preferable to vibrate this scattering plate to average out the phase disturbance.
(5) 発明の効果
本発明によれば、加工に用いるレーザ光を用いて極めて
高精度な位置合わせが可能である。さらに、レーザ光散
乱手段を振動させることによって不所望な解像ムラが平
均化源れるので、視覚的に極めて鮮明な位置合わせパタ
ーン像が得られる。(5) Effects of the Invention According to the present invention, extremely highly accurate positioning is possible using a laser beam used for processing. Furthermore, by vibrating the laser light scattering means, undesirable resolution unevenness is averaged out, so that a visually extremely clear alignment pattern image can be obtained.
(6) 実施例 以下、図面を用いて本発明の一実施例を説明する。(6) Example An embodiment of the present invention will be described below with reference to the drawings.
第2図は本発明の一実施例のレーザCVD装置である。FIG. 2 shows a laser CVD apparatus according to an embodiment of the present invention.
第1図の従来例と同様にレーザ発振器1からのレーザ光
は偏向プリズム2,1/4波長板3を経てXステージ1
8上のプリズム4でその方向が変えられ、しかる後にY
ステージ19上に導ひかれてアパーチャ5を経てハーフ
ミラ−6で99係程度のレーザ光が反射されて、メカニ
カルシャッタ7、投影レンズ8を経てチャンバ9内のシ
リコン基板10上に照射される。その際にシリコン基板
10上でのレーザ光の位置およびスポット径の制御(z
軸方向)の制御はシリコン基板1o上に予め位置合わせ
マークを設け、レーザ照射の際にXステージ18、Yス
テージ19、投影レンズ8を制御してスポットの調整を
行なう。As in the conventional example shown in FIG.
Its direction is changed by prism 4 on 8, and then Y
The laser beam is guided onto a stage 19, passes through an aperture 5, is reflected by a half mirror 6, passes through a mechanical shutter 7, a projection lens 8, and is irradiated onto a silicon substrate 10 in a chamber 9. At that time, the position and spot diameter of the laser beam on the silicon substrate 10 are controlled (z
For control in the axial direction, positioning marks are provided in advance on the silicon substrate 1o, and the spot is adjusted by controlling the X stage 18, Y stage 19, and projection lens 8 during laser irradiation.
この調整は、ハーフミラ−6を透過したシリコン基板1
0からの反射光を第1のミラー11、集光レンズ12、
第2のミラー13、マイクロスコープレンズ14に導び
き、テレビカメラ15でそのパターン、すなわち位置合
わせマークのパターンを検出することにょ)行なう。こ
こで、位置合わせ時に散乱板20をハーフミラ−6と偏
向プリズム4との間に設ける。この散乱板20によって
レーザ光はインコピーレフト光とナシ、位置合わせパタ
ーンは第4図のようになって見かけ上の精度が大幅に向
上する。さらにこの散乱板20をレーザ光に対して垂直
方向に動かすことによって散乱は一層平均化され第5図
のように位置合わせパターンの視認性は一層向上する。This adjustment is performed using the silicon substrate 1 that has passed through the half mirror 6.
The reflected light from the first mirror 11, the condensing lens 12,
The pattern is guided to the second mirror 13 and the microscope lens 14, and the pattern, that is, the pattern of the alignment mark, is detected by the television camera 15. Here, a scattering plate 20 is provided between the half mirror 6 and the deflection prism 4 during alignment. Due to this scattering plate 20, the laser beam is not an incopy left beam, and the alignment pattern becomes as shown in FIG. 4, so that the apparent accuracy is greatly improved. Further, by moving the scattering plate 20 in a direction perpendicular to the laser beam, the scattering is further averaged and the visibility of the alignment pattern is further improved as shown in FIG.
なお、この動かす速さは散乱板の表面の変動の一周期、
すなわち同じ位置における変化の周期が目視した場合に
ちらつかない程度で十分であり、散乱板20に金属線間
隔300μm以下の金属網を用いた場合には20111
m7秒以上で十分でめる。The speed of this movement is one period of fluctuation of the surface of the scattering plate,
In other words, it is sufficient that the period of change at the same position does not flicker when visually observed, and if the scattering plate 20 is a metal mesh with a metal wire spacing of 300 μm or less, 20111
7 seconds or more is sufficient.
なお、プラスティック網などでも十分な効果が得られる
。Note that a sufficient effect can also be obtained with a plastic net or the like.
第1図は従来のレーザCVD装置の概略図、第2図は本
発明の一実施例のレーザCVD装置の概略図、第3図は
散乱板を用いない場合の位置合わせパターン像、第4図
は散乱板を用いた場合の位置合わせパターン像、第5図
は散乱板を振動させた場合の位置合わせパターン像、で
ある。
なお、図において、1・・・し〜ザ発振器、2・・・偏
向プリズム、3・・・174波長板、4・・・プリズム
、5・・・アパーチャ、6・・・ハーフミラ−17・・
・メカニカルシャッタ、8・・・投影レンズ、9・・・
チャンバ、10・・・シリコン基板、11・・・第1の
ミラー、12・・・集光レンズ、13・・・第2のミラ
ー、14・・・マイクロスコープレンズ、15・・・テ
レビカメラ、18・・・Xステージ、19・・・Yステ
ージ、2o・・・散乱板、である。
第3図
第4図
第5図
手続補正書(方式)
%式%
1、 事件の表示
昭和58年特許原第1.61576号
Z 発明の名称
レーザ装置
3、 補正をする者
事件との関係 特許出願人
昭和59年1月61日(発送日)
5、補正の対象
明細書全文Fig. 1 is a schematic diagram of a conventional laser CVD apparatus, Fig. 2 is a schematic diagram of a laser CVD apparatus according to an embodiment of the present invention, Fig. 3 is an alignment pattern image when no scattering plate is used, and Fig. 4 5 is an alignment pattern image when a scattering plate is used, and FIG. 5 is an alignment pattern image when the scattering plate is vibrated. In the figure, 1... the oscillator, 2... deflection prism, 3... 174 wavelength plate, 4... prism, 5... aperture, 6... half mirror 17...
・Mechanical shutter, 8... Projection lens, 9...
Chamber, 10... Silicon substrate, 11... First mirror, 12... Condensing lens, 13... Second mirror, 14... Microscope lens, 15... Television camera, 18...X stage, 19...Y stage, 2o... scattering plate. Figure 3 Figure 4 Figure 5 Procedural amendment (method) % formula % 1. Indication of the case Original Patent No. 1.61576 of 1988 Name of the invention Laser device 3. Person making the amendment Relationship to the case Patent Applicant January 61, 1982 (shipping date) 5. Full text of the specification subject to amendment
Claims (1)
装置において、前記導光路に前記レーザ光のコピーレン
ズを低下せしめる手段が設けられていることを特徴とす
るレーザ装置。A laser device that irradiates laser light onto a substrate through a predetermined light guide path, wherein the light guide path is provided with means for lowering a copy lens for the laser light.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58161576A JPS6052822A (en) | 1983-09-02 | 1983-09-02 | Laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58161576A JPS6052822A (en) | 1983-09-02 | 1983-09-02 | Laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6052822A true JPS6052822A (en) | 1985-03-26 |
JPH0438833B2 JPH0438833B2 (en) | 1992-06-25 |
Family
ID=15737740
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58161576A Granted JPS6052822A (en) | 1983-09-02 | 1983-09-02 | Laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6052822A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61211356A (en) * | 1985-03-15 | 1986-09-19 | Kuraray Co Ltd | Water-resistant composition |
JPH02248041A (en) * | 1989-03-20 | 1990-10-03 | Mitsubishi Electric Corp | Laser beam irradiation device |
KR100480435B1 (en) * | 2002-07-05 | 2005-04-06 | 민성욱 | Device to chase automatically marking-position of laser marking system |
US8262235B2 (en) | 2007-08-09 | 2012-09-11 | Konica Minolta Opto, Inc. | Laser projector and image projection method for projecting an image with reduced speckles on the projected laser light image |
JP2017186240A (en) * | 2016-03-31 | 2017-10-12 | 旭硝子株式会社 | Manufacturing method of glass substrate, method for forming pore in glass substrate and device for forming pore in glass substrate |
JP2019091698A (en) * | 2013-09-18 | 2019-06-13 | 株式会社半導体エネルギー研究所 | Stack manufacturing apparatus |
US11123822B2 (en) * | 2016-03-31 | 2021-09-21 | AGC Inc. | Manufacturing method for glass substrate, method for forming hole in glass substrate, and apparatus for forming hole in glass substrate |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5068347A (en) * | 1973-10-22 | 1975-06-07 | ||
JPS5565940A (en) * | 1978-11-13 | 1980-05-17 | Matsushita Electric Ind Co Ltd | Laser image display device |
-
1983
- 1983-09-02 JP JP58161576A patent/JPS6052822A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5068347A (en) * | 1973-10-22 | 1975-06-07 | ||
JPS5565940A (en) * | 1978-11-13 | 1980-05-17 | Matsushita Electric Ind Co Ltd | Laser image display device |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61211356A (en) * | 1985-03-15 | 1986-09-19 | Kuraray Co Ltd | Water-resistant composition |
JPH02248041A (en) * | 1989-03-20 | 1990-10-03 | Mitsubishi Electric Corp | Laser beam irradiation device |
KR100480435B1 (en) * | 2002-07-05 | 2005-04-06 | 민성욱 | Device to chase automatically marking-position of laser marking system |
US8262235B2 (en) | 2007-08-09 | 2012-09-11 | Konica Minolta Opto, Inc. | Laser projector and image projection method for projecting an image with reduced speckles on the projected laser light image |
JP2019091698A (en) * | 2013-09-18 | 2019-06-13 | 株式会社半導体エネルギー研究所 | Stack manufacturing apparatus |
JP2017186240A (en) * | 2016-03-31 | 2017-10-12 | 旭硝子株式会社 | Manufacturing method of glass substrate, method for forming pore in glass substrate and device for forming pore in glass substrate |
TWI725155B (en) * | 2016-03-31 | 2021-04-21 | 日商Agc股份有限公司 | Manufacturing method for glass substrate, method for forming hole in glass substrate, and apparatus for forming hole in glass substrate |
US11123822B2 (en) * | 2016-03-31 | 2021-09-21 | AGC Inc. | Manufacturing method for glass substrate, method for forming hole in glass substrate, and apparatus for forming hole in glass substrate |
Also Published As
Publication number | Publication date |
---|---|
JPH0438833B2 (en) | 1992-06-25 |
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