JPS6052571A - Formation of pattern - Google Patents
Formation of patternInfo
- Publication number
- JPS6052571A JPS6052571A JP58159053A JP15905383A JPS6052571A JP S6052571 A JPS6052571 A JP S6052571A JP 58159053 A JP58159053 A JP 58159053A JP 15905383 A JP15905383 A JP 15905383A JP S6052571 A JPS6052571 A JP S6052571A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- vapor deposition
- pattern
- mask
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000007740 vapor deposition Methods 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000000151 deposition Methods 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 abstract description 12
- 239000000463 material Substances 0.000 abstract description 11
- 230000008020 evaporation Effects 0.000 abstract description 10
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 20
- 239000000975 dye Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- ZPUCINDJVBIVPJ-LJISPDSOSA-N cocaine Chemical compound O([C@H]1C[C@@H]2CC[C@@H](N2C)[C@H]1C(=O)OC)C(=O)C1=CC=CC=C1 ZPUCINDJVBIVPJ-LJISPDSOSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- -1 polybutyral Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、蒸着方法に関し、より詳しくは、微細加工に
利用されるフォトリソグラフィー技術、特に、フォトレ
ジストパターンの形成された回路基板、ガラス板、固体
撮像素子等の基板」二にパターニング物質を蒸着する方
法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a vapor deposition method, and more particularly, to a photolithography technique used for microfabrication, and in particular to a substrate such as a circuit board, glass plate, solid-state imaging device, etc., on which a photoresist pattern is formed. "Secondly, it relates to a method of depositing a patterning material."
従来、蒸着方法による蒸着層の形成は、種々の分野で広
く利用されており、例えば電子写真感光体層、種々の光
学素子に於ける反射防止層、種々の保護層、カラーフィ
ルターの色素層等の形成が代表的なものとして挙げられ
る。このような蒸着を実施する場合、従来は、蒸着され
るべき基板等の被蒸着材料は、蒸着源（蒸着を行う蒸着
材料が加熱のために設置されている場所）に対して垂直
な平面上に設置して蒸着するのが一般的であった。Conventionally, the formation of vapor deposited layers by vapor deposition methods has been widely used in various fields, such as electrophotographic photoreceptor layers, antireflection layers in various optical elements, various protective layers, dye layers of color filters, etc. A typical example is the formation of When carrying out such vapor deposition, conventionally, the material to be vapor-deposited such as the substrate to be vapor-deposited is placed on a plane perpendicular to the vapor deposition source (the place where the vapor-deposited material to be vapor-deposited is placed for heating). It was common practice to install the evaporator in the
一方、大規模集積回路や微細色フィルター等の微細パタ
ーンの製造法に於いて、リフトオフ法（又はリバースエ
ツチング法）と称されるパターン形成法が知られている
。この方法は、種々の基板ｌ上に、予めフォトレジスト
からなる後で除去される凹凸パターンマスク（以下、ア
ンダーマスクと称する）２を形成し、その上部に金属や
色素等の蒸着層３を第１図に示されるように積層し、蒸
着層３には直接作用を及ぼすことなく下部のアンダーマ
スク２を基板上から除去することにより、その−に部の
不要な蒸着層３′を物理的に除去し、所望とする蒸着層
のパターンを基板上に形成する方法である。On the other hand, a pattern forming method called a lift-off method (or reverse etching method) is known as a method for manufacturing fine patterns for large-scale integrated circuits, fine color filters, and the like. In this method, a concavo-convex pattern mask (hereinafter referred to as an undermask) 2 made of photoresist and to be removed later is formed in advance on various substrates 1, and a vapor-deposited layer 3 of metal, dye, etc. is deposited on top of the mask 2. The layers are stacked as shown in Figure 1, and by removing the lower undermask 2 from the substrate without directly acting on the vapor deposited layer 3, the unnecessary vapor deposited layer 3' on the negative side is physically removed. In this method, a desired pattern of a deposited layer is formed on a substrate.
しかしながら、このリフトオフ法によれば、基板及びア
ンダーマスク」二に形成される蒸着層３のステップカバ
レッジ性（段差を連続的に被覆する性質）がよいため、
アンダーマスク２を溶解しても、第２図のＡで示される
ような除去すべき部分の蒸着層３′が基板上に残存する
ような欠陥がしばしば発生し、所望とする完璧な蒸着パ
ターンを得難いという問題点があった。However, according to this lift-off method, the step coverage of the vapor deposition layer 3 formed on the substrate and the undermask (2) is good (the property of continuously covering the steps).
Even if the undermask 2 is melted, defects such as the portion of the deposited layer 3' that should be removed, as shown by A in FIG. 2, often remains on the substrate, making it difficult to achieve the desired perfect deposition pattern. The problem was that it was difficult to obtain.
本発明者等は上記の欠点を解決するリフトオフ法につき
鋭意検討した結果、蒸着を実施するに際し、蒸着源に対
する垂直平面に対して、該基板を適度に傾斜させて配置
して蒸着を実施することによって、ステップカバレッジ
性のよさに基づく蒸着パターン欠陥の発生を抑制するこ
とが可能なことを見い出した。The inventors of the present invention have conducted intensive studies on a lift-off method that solves the above-mentioned drawbacks, and have found that when performing evaporation, the substrate is placed at an appropriate inclination with respect to a plane perpendicular to the evaporation source. It was discovered that it is possible to suppress the occurrence of deposition pattern defects based on good step coverage.
本発明の目的は、リフトオフ法により、基板上に高品質
な蒸着膜パターンを形成することのできる新規な蒸着方
法を提供することにある。An object of the present invention is to provide a novel vapor deposition method that can form a high-quality vapor deposition film pattern on a substrate using a lift-off method.
すなわち、本発明の蒸着方法は、その表面上に後で除去
される凹凸パターンの形成された基板を蒸着するに際し
、蒸着源に対する垂直平面に対して、前記基板を傾斜さ
せて配置して蒸着を実施することを特徴とする。That is, in the vapor deposition method of the present invention, when vapor depositing a substrate on which a concavo-convex pattern is formed on the surface thereof, the vapor deposition is performed by arranging the substrate at an angle with respect to a plane perpendicular to the vapor deposition source. It is characterized by carrying out.
以下、本発明による蒸着方法につき、図面に基づいて説
明する。Hereinafter, the vapor deposition method according to the present invention will be explained based on the drawings.
第３図は、本発明の方法に用いる蒸着装置の模式的断面
図の概要であり、真空にすることのできるペルジャー４
内に、蒸着材料５が積載され、抵抗加熱手段を有するポ
ート６と、蒸着の行われる凹凸パターンの形成された基
板７とが配置されている。FIG. 3 is an outline of a schematic cross-sectional view of a vapor deposition apparatus used in the method of the present invention.
A port 6 in which a vapor deposition material 5 is loaded, a port 6 having a resistance heating means, and a substrate 7 on which a concavo-convex pattern is formed on which vapor deposition is performed are arranged.
本発明の蒸着方法に於いては、凹凸パターンの形成され
た基板７を蒸着源に対する垂直平面８に対して、傾斜さ
せて配置した状態下に蒸着が実施される。なお、本発明
にいう蒸着源とは、便宜的にポート６内の蒸着材料５の
中央部分、より正確には重心を指すことにする。また、
基板７を蒸着源に対する垂直平面８に対して傾斜させた
配置とは、垂直平面８と基板７の位置する平面とが形成
する角度（傾斜角）θが少なくとも５°以上の値を有す
ることをいう。In the vapor deposition method of the present invention, vapor deposition is performed while the substrate 7 on which the uneven pattern is formed is inclined with respect to a plane 8 perpendicular to the vapor deposition source. Note that, for convenience, the evaporation source as used in the present invention refers to the central portion of the evaporation material 5 within the port 6, more precisely, the center of gravity. Also,
The arrangement in which the substrate 7 is inclined with respect to the plane 8 perpendicular to the vapor deposition source means that the angle (angle of inclination) θ formed by the vertical plane 8 and the plane on which the substrate 7 is located has a value of at least 5°. say.
本発明の蒸着方法は、蒸着の行われる基板の配置を除け
ば、従来の蒸着と全く変わることな〈実施され、抵抗加
熱法による蒸着方法に限定されることなく、電子ビーム
法、スパッタ法等も包含される。蒸着材料としては、昇
華、蒸発又はスパッタリング可能な、アルミニウム、シ
リコン等の無機物や、色素等の有機物が、目的に応じて
適宜選択して使用される。傾斜角θとしては、ｌＯ〜４
０゜程度とすることが好ましく、１５〜２５°の範囲か
ら選択することが特に好ましい。傾斜角が余りに小さい
場合には本発明の効果が得られず、また傾斜角が余りに
大きい場合には基板上の蒸着層の層厚が不均一になった
り、所望位置に蒸着層が形成できなくなったりするので
好ましくない。The vapor deposition method of the present invention is carried out in the same way as conventional vapor deposition except for the arrangement of the substrate on which the vapor deposition is performed. is also included. As the vapor deposition material, inorganic substances such as aluminum and silicon, and organic substances such as dyes, which can be sublimed, evaporated, or sputtered, are appropriately selected and used depending on the purpose. The inclination angle θ is lO~4
The angle is preferably about 0°, and particularly preferably selected from the range of 15 to 25°. If the angle of inclination is too small, the effect of the present invention cannot be obtained, and if the angle of inclination is too large, the thickness of the vapor deposited layer on the substrate may become uneven, or the vapor deposited layer may not be formed at the desired position. This is not desirable because it causes
本発明の蒸着方法が適用される基板としては、その使用
目的により種々のものが使用でき、特に限定されないが
、具体的には以下のようなものが使用できる０例えば集
積回路を製造する場合には、紙−フェノール樹脂積層板
、ガラス−エポキシ樹脂積層板等の従来回路用基板とし
て使用されている種々の絶縁性材料からなるフィルム若
しくは板が、微細色フィルターを製造する場合には、ガ
ラス板；光学用樹脂板；ゼラチン、ポリビニルアルコー
ル、ヒドロキシルエチルセルロース、メチルメタクリレ
ート、ポリエステル、ポリブチラール、ポリアミド等の
樹脂フィルムが挙げられる。また、基板をカラーフィル
ターを適用されるものと一体として形成することも可能
であり、その場合の基板の一例としては、ＣＯＤ、ＢＢ
Ｄ。As the substrate to which the vapor deposition method of the present invention is applied, various substrates can be used depending on the purpose of use, and although not particularly limited, specifically, the following substrates can be used.For example, when manufacturing integrated circuits, Films or plates made of various insulating materials, such as paper-phenolic resin laminates and glass-epoxy resin laminates, which are conventionally used as circuit boards, are replaced by glass plates when manufacturing fine color filters. ; Optical resin plate; Examples include resin films of gelatin, polyvinyl alcohol, hydroxyl ethyl cellulose, methyl methacrylate, polyester, polybutyral, polyamide, and the like. It is also possible to form the substrate integrally with the color filter to which it is applied; examples of the substrate in that case include COD, BB, etc.
D.
ＣＩＤ等の固体撮像素子、ブラウン管表示面、撮像管の
受光面、液晶ディスプレー面、カラー電子写真感光体等
が挙げられる。Examples include solid-state imaging devices such as CID, display surfaces of cathode ray tubes, light-receiving surfaces of image pickup tubes, liquid crystal display surfaces, and color electrophotographic photoreceptors.
一方、該基板上に形成され後で除去される凹凸パターン
（アンダーマスク）２は、一般的には、フォトレジスト
を使用して形成するのが好都合である。このフォトレジ
ストは、ポジ型であってもネガ型であってもよいし、ま
た、液状のものであってもドライフィルムタイプのもの
でもよい。On the other hand, the concavo-convex pattern (undermask) 2 formed on the substrate and later removed is generally conveniently formed using photoresist. This photoresist may be of positive type or negative type, and may be of liquid type or dry film type.
以下、本発明の蒸着方法が好適に実施されるリフトオフ
法による蒸着膜パターンの形成方法につき、第４図〜第
７図に基づいて説明する。Hereinafter, a method for forming a deposited film pattern by a lift-off method in which the deposition method of the present invention is suitably carried out will be explained based on FIGS. 4 to 7.
先ず、第４図に示されるように、基板１上にフォトレジ
ストを積層し、パターンマスクを介して、紫外光、遠紫
外光、Ｘ線あるいは電子線等により露光し、該レジスト
の現像液を用い処理することによって露光部分選択的に
溶解し、アンダーマスク２を得る。First, as shown in FIG. 4, a photoresist is layered on a substrate 1, exposed to ultraviolet light, far ultraviolet light, X-rays, or electron beams through a pattern mask, and a developer for the resist is applied. The exposed portion is selectively dissolved by the treatment, and an under mask 2 is obtained.
次いで、第５図に示されるように、後で除去される凹凸
パターン２の形成された基板ｌ上に、前述した本発明の
蒸着方法により蒸着材料を蒸着する。本発明の蒸着方法
は、蒸着源に対する垂直平面に対して、基板を傾斜させ
て配置して蒸着を実施するので、アンダーマスク２のな
す段差部分の一方の側面は、蒸着層により連続的には被
覆されず、ステップカバレッジ性が改善される。Next, as shown in FIG. 5, a vapor deposition material is vapor deposited by the above-described vapor deposition method of the present invention on the substrate l on which the uneven pattern 2 is formed, which will be removed later. In the vapor deposition method of the present invention, vapor deposition is performed by arranging the substrate at an angle with respect to a plane perpendicular to the vapor deposition source. No coating, improving step coverage.
次いで、第６図に示されるように、アンダーマスクを溶
解等の手段により除去すれば、不要なアンダーマスク上
の蒸着層３′も同時に除去され、基板上に所望形状のパ
ターンを有する蒸着層３を得ることができる。Next, as shown in FIG. 6, when the undermask is removed by means such as melting, the unnecessary vapor deposited layer 3' on the under mask is also removed at the same time, leaving a vapor deposited layer 3 having a pattern of a desired shape on the substrate. can be obtained.
このような本発明の蒸着方法によれば、基板上に形成さ
れた凹凸パターンのなす段差部分の一方の側面は、蒸着
層により連続的には被覆されない。したがって、蒸着後
に凹凸パターンを溶解液等に浸漬することにより除去す
る際には、溶解液は必ず蒸着層の下方の凹凸パターンに
接触することができ、第２図のＡで示されるような基板
及びアンダーマスク上に形成される蒸着層３のステップ
カバレッジ性がよいため、アンダーマスクを溶解除去し
ても除去すべき部分の蒸着層３′が基板上に残存するよ
うな欠陥を生ずることなく、所望の蒸着パターンを基板
」二に正確に形成することが可能である。更に、アンダ
ーマスクをレジスト溶解液にて溶解除去するに際しても
、基板のレジスト溶解液中への浸漬時間を大幅に短縮す
ることができるので、特に基板上のパターニング物質が
色素等の有機物の場合には、レジスト溶解液のこれらパ
ターニング物質へ及ぼす影響を極力小さくすることが可
能であり、高品質な蒸着膜パターン、を形成することが
できる。According to the vapor deposition method of the present invention, one side surface of the stepped portion formed by the uneven pattern formed on the substrate is not continuously covered with the vapor deposition layer. Therefore, when removing the uneven pattern by immersing it in a solution or the like after vapor deposition, the solution can always come into contact with the uneven pattern below the vapor deposition layer, and the substrate as shown by A in FIG. Also, since the step coverage of the vapor deposited layer 3 formed on the undermask is good, even if the undermask is dissolved and removed, the vapor deposition layer 3' that should be removed will not remain on the substrate. It is possible to accurately form a desired deposition pattern on the substrate. Furthermore, when removing the undermask with a resist solution, the immersion time of the substrate in the resist solution can be significantly shortened, especially when the patterning material on the substrate is an organic substance such as a dye. It is possible to minimize the influence of the resist solution on these patterning substances, and it is possible to form a high-quality deposited film pattern.
以下、本発明のパターン形成法を実施例に基づき説明す
る。Hereinafter, the pattern forming method of the present invention will be explained based on Examples.
実施例１
ガラス基板（５ｃｍＸ ５ｃ■）上にフォトレジスト（
商品名： ０ＤＯＲ−１０１３、東京応化■製）をスピ
ナーにより７０００Ａの膜厚に塗布した。このレジスト
膜を乾燥した後、 １２０℃で２０分間プリベークした
後、所望のパターンを有するマスクを用い、遠紫外光に
て１２秒間の露光を行った。次いで、基板を現像液（０
ＤＵＲ−１０１０シリーズ専用現像液、商品名、東京応
化■製）中に浸漬してレジストを現像処理し、凹凸パタ
ーンの形成された基板を作製した。Example 1 Photoresist (
A product (trade name: 0DOR-1013, manufactured by Tokyo Ohka Co., Ltd.) was applied to a film thickness of 7000A using a spinner. After drying this resist film, it was prebaked at 120° C. for 20 minutes, and then exposed to deep ultraviolet light for 12 seconds using a mask having a desired pattern. Next, the substrate was placed in a developer (0
The resist was developed by immersing it in a developer exclusively for the DUR-1010 series (trade name, manufactured by Tokyo Ohka Chemical Co., Ltd.) to produce a substrate with a concavo-convex pattern formed thereon.
次に、真空蒸着装置内に、この基板を蒸着源（Ｎｏポー
トに詰めた銅フタロシアニン）に対する垂直平面に対し
て２０°傾斜させて配置した。蒸着源と基板の中心部の
距離は３０Ｃ！１とした。蒸着装置内の真空度を１０’
Ｔｏｏｔ迄排気した後、Ｎｏポートを５００℃に加熱
し、基板上に約３０００への銅フタロシアこン蒸着膜を
蒸着した。Next, this substrate was placed in a vacuum evaporation apparatus at an angle of 20 degrees with respect to a plane perpendicular to the evaporation source (copper phthalocyanine packed in the No port). The distance between the evaporation source and the center of the substrate is 30C! It was set to 1. The degree of vacuum in the evaporation equipment is set to 10'
After evacuating to Toot, the No. port was heated to 500° C., and a copper phthalocyanate film of about 3000° C. was deposited on the substrate.
次に蒸着基板を真空蒸着装置から取り出し、アンダーマ
スクを除去（リフトオフ）するために、０ＤＵＲ−１０
１０シリーズ専用現像液中に約２分間浸漬し、撹拌しつ
つアンダーマスクを溶解除去した。Next, the evaporation substrate was taken out from the vacuum evaporation equipment, and in order to remove the undermask (lift-off), 0DUR-10
The undermask was dissolved and removed by immersing it in a special developer for the 10 series for about 2 minutes while stirring.
このようにして製造された基板上の色素パターンを顕微
鏡で観察し、ブリッジ等のある不良品の発生率を調査し
たところ（ｎ＝１５０ ） 、 ２％以下であった。The dye pattern on the substrate thus manufactured was observed under a microscope to investigate the incidence of defective products with bridges etc. (n=150), and it was found to be 2% or less.
比較例１
基板の蒸着に際し、基板を蒸着源に対する垂直平面上に
配置したことを除いては、実施例１と全く同様な方法に
より基板上に色素パターンを形成した。このようにして
製造された基板上の色素パターンの形成し、不良品の発
生率を調査したところ（ｎ＝１００ ） 、 １０％で
あった。Comparative Example 1 A dye pattern was formed on a substrate in the same manner as in Example 1, except that the substrate was placed on a plane perpendicular to the vapor deposition source. When the dye pattern was formed on the substrate thus manufactured and the incidence of defective products was investigated (n=100), it was found to be 10%.
第１図は、従来のりフトオフ法によるパターン形成法を
示す模式図である。第２図は、従来のリフトオフ法によ
る場合に生ずるパターン欠陥を示す図である。第３図は
、本発明の蒸着方法を示す模式図である。第４図〜第６
図は、本発明の蒸着方法を利用したリフトオフ法による
パターン形成法を示す模式１程図である。
ｌ二基板 ２：凹凸パターン
３．３′：蒸着層 ４：ベルジャー
５：蒸着材料 ６：ポート
７：凹凸パターンの形成された基板
８：蒸着源に対する垂直平面アンダーマスクＡニステッ
プカバレッジ性がよいために生ずる欠陥
θ：傾斜角
１FIG. 1 is a schematic diagram showing a pattern forming method using a conventional lift-off method. FIG. 2 is a diagram showing pattern defects that occur when using the conventional lift-off method. FIG. 3 is a schematic diagram showing the vapor deposition method of the present invention. Figures 4 to 6
The figure is a schematic diagram showing a pattern forming method by a lift-off method using the vapor deposition method of the present invention. 12 substrates 2: uneven pattern 3. 3': vapor deposition layer 4: bell jar 5: vapor deposition material 6: port 7: substrate with uneven pattern 8: vertical plane undermask A with good two-step coverage for the vapor deposition source Defect θ occurring in: Tilt angle 1
Claims (1)
た基板を蒸着するに際し、蒸着源に対する垂直平面に対
して、前記基板を傾斜させて配置して蒸着を実施するこ
とを特徴とする蒸着方法。Vapor deposition characterized in that when depositing a substrate on which a concavo-convex pattern is formed on the surface thereof, the vapor deposition is carried out by arranging the substrate at an angle with respect to a plane perpendicular to the vapor deposition source. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58159053A JPS6052571A (en) | 1983-09-01 | 1983-09-01 | Formation of pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58159053A JPS6052571A (en) | 1983-09-01 | 1983-09-01 | Formation of pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6052571A true JPS6052571A (en) | 1985-03-25 |
Family
ID=15685190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58159053A Pending JPS6052571A (en) | 1983-09-01 | 1983-09-01 | Formation of pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6052571A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS613885A (en) * | 1984-06-18 | 1986-01-09 | Taiyo Yuden Co Ltd | Manufacture of thin film by atomization |
| US5017459A (en) * | 1989-04-26 | 1991-05-21 | Eastman Kodak Company | Lift-off process |
| JP2019199630A (en) * | 2018-05-15 | 2019-11-21 | 東京エレクトロン株式会社 | Method for forming film |
-
1983
- 1983-09-01 JP JP58159053A patent/JPS6052571A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS613885A (en) * | 1984-06-18 | 1986-01-09 | Taiyo Yuden Co Ltd | Manufacture of thin film by atomization |
| US5017459A (en) * | 1989-04-26 | 1991-05-21 | Eastman Kodak Company | Lift-off process |
| JP2019199630A (en) * | 2018-05-15 | 2019-11-21 | 東京エレクトロン株式会社 | Method for forming film |
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