JPS6051682B2 - Optical mode discriminator - Google Patents

Optical mode discriminator

Info

Publication number
JPS6051682B2
JPS6051682B2 JP15659277A JP15659277A JPS6051682B2 JP S6051682 B2 JPS6051682 B2 JP S6051682B2 JP 15659277 A JP15659277 A JP 15659277A JP 15659277 A JP15659277 A JP 15659277A JP S6051682 B2 JPS6051682 B2 JP S6051682B2
Authority
JP
Japan
Prior art keywords
dielectric layer
layer
refractive index
dielectric
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15659277A
Other languages
Japanese (ja)
Other versions
JPS53114449A (en
Inventor
茂雄 若生
春夫 森
久義 柳井
武志 神谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP15659277A priority Critical patent/JPS6051682B2/en
Publication of JPS53114449A publication Critical patent/JPS53114449A/en
Publication of JPS6051682B2 publication Critical patent/JPS6051682B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は誘電体層と金属層とを備えた薄膜形の光モー
ド弁別器に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film type optical mode discriminator comprising a dielectric layer and a metal layer.

この種の薄膜形光モード弁別器として例えば屈折率が
比較的小さい誘電体基板上に、比較的屈折率の大きい誘
電体層を積層し、所望の光モード弁別器を形成すべく誘
電体層をある一定の厚みを残して部分的にエッチングし
て除去した構造が知られている。
For this type of thin film optical mode discriminator, for example, a dielectric layer having a relatively high refractive index is laminated on a dielectric substrate having a relatively low refractive index, and the dielectric layer is stacked to form a desired optical mode discriminator. A structure in which a certain thickness is partially etched and removed is known.

しかし、このようにして作成した光モード弁別器では
、誘電体層表面あるいは側面のエッチングによる境界面
の境界不整が光の波長程度で存在するため、この面精度
の悪さが大きな光散乱損失を引きおこし効率の低下を招
く原因となつていた。
However, in the optical mode discriminator created in this way, there is an irregularity in the boundary surface due to etching on the surface or side surface of the dielectric layer, which is about the wavelength of light, and this poor surface precision causes a large light scattering loss. This was a cause of a decrease in revitalization efficiency.

本発明はこれらの欠点を緩和することを目的とし、こ
れを比較的大きな屈折率を有する誘電体層と、所望のパ
ターンの金属層とを積層した構成によつて達成したもの
であり、以下図面について詳細に説明する。 第1図は
本発明の一実施例を示す平面図、第2図は第1図のX−
Y方向に沿つた断面図である。
The present invention aims to alleviate these drawbacks, and has achieved this by using a structure in which a dielectric layer having a relatively large refractive index and a metal layer with a desired pattern are laminated, as shown in the drawings below. will be explained in detail. Fig. 1 is a plan view showing an embodiment of the present invention, and Fig. 2 is a plan view showing an embodiment of the present invention.
It is a sectional view along the Y direction.

第1図と第2図において、1は屈折率が比較的小さい
誘電体基板、2は屈折率が比較的大きい誘電体層、3は
誘電体基板1と同じ(又は異なる)材質の屈折率が比較
的小さい誘電体層、4は空気、5は金属層、6は入射ビ
ーム光を示している。誘電体層2中の入射ビーム光6と
の入出力光の結合は、プリズムカプラー7a、7bを介
して行なうことができる。 この実施例では、誘電体基
板1、誘電体層2、誘電体層3、金属層5として順次そ
れぞれ、SiO2基板、Al。
In FIGS. 1 and 2, 1 is a dielectric substrate with a relatively small refractive index, 2 is a dielectric layer with a relatively high refractive index, and 3 is a material with the same (or different) refractive index as the dielectric substrate 1. A relatively small dielectric layer, 4 is air, 5 is a metal layer, and 6 is an incident beam of light. Coupling of the input and output light with the incident beam of light 6 in the dielectric layer 2 can take place via prism couplers 7a, 7b. In this embodiment, the dielectric substrate 1, the dielectric layer 2, the dielectric layer 3, and the metal layer 5 are made of SiO2 substrate and Al, respectively.

O。層、SiO2層、Al層を用い、SiO2基板1上
に高周波スパッタ法(あるいはC、V、D・法その他の
方法)でAl2O3層2を数千A付着させ、次にSlO
2層3を誘電体層2と同様の、高周波スパッタ法(ある
いはC.V.D法その他の方法)で千A付着させ、さら
にA1層5を数千Aマスク蒸着法(あるいは蒸着後のホ
トエッチング法等)によつて付着させて構成している。
このような構成で誘電体層3の膜厚を適当に選ぶと、誘
電体層2を伝播するTEモードの光6aとTMモードの
光6bとの間で減衰定数差が著しく大きくなる点が現わ
るので、■モードの光6aを取り出す光弁別器が得られ
る。
O. An Al2O3 layer 2 of several thousand amps is deposited on the SiO2 substrate 1 using a high frequency sputtering method (or C, V, D method or other method), and then a SiO2 layer and an Al layer are used.
The second layer 3 is deposited by a high-frequency sputtering method (or C.V.D method or other method) similar to that of the dielectric layer 2, and the A1 layer 5 is deposited by a mask evaporation method (or a photolithography method after vapor deposition) of several thousand amps. It is constructed by attaching it by etching method, etc.).
If the film thickness of the dielectric layer 3 is appropriately selected in such a configuration, the difference in attenuation constant between the TE mode light 6a and the TM mode light 6b propagating through the dielectric layer 2 becomes significantly large. Therefore, an optical discriminator that extracts the light 6a of mode 2 can be obtained.

次にこのような構成によりTEモードの光6aとTMモ
ードの光6bとの間で減衰定数差が著しく大きくなる理
由について述べる。
Next, the reason why the difference in attenuation constant between the TE mode light 6a and the TM mode light 6b becomes significantly large due to such a configuration will be described.

誘電体2中の光の伝播定数β,光の減衰定数αと誘電体
2の膜厚T2,誘電体3の膜厚bとの関係は、b=0と
した良く知られている(例えばAppIiedOpti
cs第化巻第5号A.Reisinger参照)関係式
の拡張として次式で示すことができる。ここで (TMモードの場合) であり λoは光の真空中での波長、El,ε2,ε3,E4,
ε5は波長λ。
The relationship between the propagation constant β of light in the dielectric 2, the attenuation constant α of light, the film thickness T2 of the dielectric 2, and the film thickness b of the dielectric 3 is well known with b=0 (for example, AppIiedOpti
cs Vol. No. 5 A. (Reisinger)) The relational expression can be expressed as an extension of the following expression. Here (for TM mode), λo is the wavelength of light in vacuum, El, ε2, ε3, E4,
ε5 is the wavelength λ.

に対する誘電体基板1,誘電体層2,誘電体層3,空気
4,もしくは金属層5それぞれの物質の誘電率、T2は
光伝送路となる薄膜誘電体層の厚さ、bは中間絶縁層3
の厚さ、Nは光の次数、Nl,rl2,j,n4,jは
λ0に対する誘電体基板1,誘電体層2,誘電体層3,
空気4,もしくは金属層5それぞれの物質の屈折率、で
ある。誘電体基板1,誘電体層2,誘電体層3,金属層
5の物質をそれぞれSlO2,Al2O3,SiO2,
Alと』しn1=1.48,r12=1.68,n3=
1.48,n5=1.2−J7.Oとして波長6328
A(7)He−Neレーザー光について数値解析で行な
えば、誘電体層2として6000AのAl2O3層を、
誘電体層3として1000A(7)SiO2層を用いた
場合、TEモードとTMモードとの弁別比−が40dB
程度のものが得られる。
, the dielectric constant of each substance of the dielectric substrate 1, dielectric layer 2, dielectric layer 3, air 4, or metal layer 5, T2 is the thickness of the thin film dielectric layer serving as the optical transmission path, and b is the intermediate insulating layer. 3
, N is the order of light, Nl, rl2, j, n4, j are the dielectric substrate 1, dielectric layer 2, dielectric layer 3,
This is the refractive index of the substance of the air 4 or the metal layer 5, respectively. The materials of the dielectric substrate 1, dielectric layer 2, dielectric layer 3, and metal layer 5 are SlO2, Al2O3, SiO2,
With Al, n1=1.48, r12=1.68, n3=
1.48, n5=1.2-J7. Wavelength 6328 as O
A(7) Numerical analysis of He-Ne laser light reveals that a 6000A Al2O3 layer is used as the dielectric layer 2.
When a 1000A (7) SiO2 layer is used as the dielectric layer 3, the discrimination ratio between TE mode and TM mode is 40 dB.
You can get something like that.

なお、誘電体層2中の入射ビーム光5との入出力光の結
合は、プリズムカプラー7の他に誘電体層2の表面に回
折格子を形成し、入射ビーム光6との干渉により行うこ
ともできる。
Incidentally, the coupling of input and output light with the incident beam light 5 in the dielectric layer 2 is performed by forming a diffraction grating on the surface of the dielectric layer 2 in addition to the prism coupler 7, and by interference with the incident beam light 6. You can also do it.

また、前記実施例では屈折率の比較的大きい誘電体層上
に比較的屈折率の小さい誘電体層を介して金属層を積層
したが、屈折率の比較的大きい誘電体層上に直接金属層
を積層してもよい。
Furthermore, in the above embodiments, a metal layer is laminated on a dielectric layer with a relatively high refractive index via a dielectric layer with a relatively low refractive index, but the metal layer is directly stacked on the dielectric layer with a relatively high refractive index. may be laminated.

以上説明したように、本発明によれば境界面での光の散
乱を小さくできるため、効率の良い、あるいは容易に製
作できる等の利点を有する。
As explained above, according to the present invention, since the scattering of light at the boundary surface can be reduced, it has advantages such as high efficiency and easy manufacture.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す光モード弁別器の平面
図、第2図は第1図のX−Y線に沿つた断面図である。
FIG. 1 is a plan view of an optical mode discriminator showing an embodiment of the present invention, and FIG. 2 is a sectional view taken along the X-Y line in FIG. 1.

Claims (1)

【特許請求の範囲】[Claims] 1 屈折率の小さい誘電体基上に積層された屈折率の比
較的大きい第1誘電体層と、この第1誘電体層上に比較
的屈折率の小さい第2誘電体層を介して積層された金属
層とを備え、前記第2誘電体層の厚さを弁別すべきモー
ドに対応して比較的薄く設定され且つ前記金属層が弁別
領域に設置されていることを特徴とした複数モード光か
ら単一モード光を弁別する光モード弁別器。
1 A first dielectric layer having a relatively high refractive index laminated on a dielectric base having a low refractive index, and a second dielectric layer having a relatively low refractive index laminated on the first dielectric layer via a second dielectric layer having a relatively low refractive index. a metal layer, the thickness of the second dielectric layer is set to be relatively thin in accordance with the mode to be discriminated, and the metal layer is disposed in a discrimination region. Optical mode discriminator that discriminates single mode light from
JP15659277A 1977-12-27 1977-12-27 Optical mode discriminator Expired JPS6051682B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15659277A JPS6051682B2 (en) 1977-12-27 1977-12-27 Optical mode discriminator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15659277A JPS6051682B2 (en) 1977-12-27 1977-12-27 Optical mode discriminator

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP49032643A Division JPS6051085B2 (en) 1974-03-25 1974-03-25 optical device

Publications (2)

Publication Number Publication Date
JPS53114449A JPS53114449A (en) 1978-10-05
JPS6051682B2 true JPS6051682B2 (en) 1985-11-15

Family

ID=15631118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15659277A Expired JPS6051682B2 (en) 1977-12-27 1977-12-27 Optical mode discriminator

Country Status (1)

Country Link
JP (1) JPS6051682B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4762382A (en) * 1987-06-29 1988-08-09 Honeywell Inc. Optical interconnect circuit for GaAs optoelectronics and Si VLSI/VHSIC

Also Published As

Publication number Publication date
JPS53114449A (en) 1978-10-05

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