JPS6051681B2 - light reflector - Google Patents
light reflectorInfo
- Publication number
- JPS6051681B2 JPS6051681B2 JP15659177A JP15659177A JPS6051681B2 JP S6051681 B2 JPS6051681 B2 JP S6051681B2 JP 15659177 A JP15659177 A JP 15659177A JP 15659177 A JP15659177 A JP 15659177A JP S6051681 B2 JPS6051681 B2 JP S6051681B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- light
- layer
- refractive index
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/34—Optical coupling means utilising prism or grating
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Elements Other Than Lenses (AREA)
- Optical Integrated Circuits (AREA)
Description
【発明の詳細な説明】
本発明は誘電体層と金属層とを備えた薄膜形の光反射器
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film type light reflector comprising a dielectric layer and a metal layer.
この種の薄膜形光反射器として、例えば屈折率が比較的
小さい誘電体基板上に、比較的屈折率の大きい誘電体層
を積層し、所望の光反射器を形成すべく誘電体層を部分
的にエッチングして除去した構造が知られている。For this type of thin film light reflector, for example, a dielectric layer with a relatively high refractive index is laminated on a dielectric substrate with a relatively low refractive index, and portions of the dielectric layer are layered to form a desired light reflector. A structure that is removed by etching is known.
しかし、このようにして作成した光反射器では、エッチ
ング側面、すなわち横方向境界面の境界不整が光の波長
程度で存在するため、この面精度の悪さが大きな光散乱
損失を引き起こし、効果の良いものを得ることが困難で
あつた。However, in the light reflector created in this way, the etched side surface, that is, the lateral boundary surface, has boundary irregularities on the order of the wavelength of light, so this poor surface precision causes a large light scattering loss, making it difficult to improve the It was difficult to obtain things.
本発明はこれらの欠点を緩和することを目的とし、これ
を誘電体基板上に作成した比較的大きな屈折率を有する
第1の誘電体層と、この第1の誘電体層上に積層された
比較的、屈折率の小さい第2の誘電体層と、所望のパタ
ーンの金属層とを積層した構成によつて達成したもので
あり、以下図面について詳細に説明する。The present invention aims to alleviate these drawbacks, and includes a first dielectric layer having a relatively large refractive index formed on a dielectric substrate, and a layer laminated on the first dielectric layer. This is achieved by a structure in which a second dielectric layer with a relatively small refractive index and a metal layer with a desired pattern are laminated, and will be described in detail below with reference to the drawings.
第1図は本発明の一実施例を示す平面図、第2図は第1
図のX、−Y、方向に沿つた断面図、第3図は第1図の
x。Fig. 1 is a plan view showing one embodiment of the present invention, and Fig. 2 is a plan view showing an embodiment of the present invention.
A sectional view along the X and -Y directions in the figure, and FIG. 3 is the x in FIG. 1.
−Y。方向に沿つた断面図である。第1図と第2図にお
いて、1は屈折率が比較的・小さい誘電体基板、2は屈
折率が比較的大きい第1の誘電体層、3は屈折率が比較
的小さい第2の誘電体層、4は空気、5は金属層、6は
入射ビーム光を示している。-Y. It is a sectional view along the direction. In Figures 1 and 2, 1 is a dielectric substrate with a relatively low refractive index, 2 is a first dielectric layer with a relatively high refractive index, and 3 is a second dielectric layer with a relatively low refractive index. The layers 4 are air, 5 is a metal layer, and 6 is an incident beam of light.
第1の誘電体層2中の入射ビーム光6との入出力光の結
合は、プリズムカプラフー7a、7bを介して行なうこ
とができる。また、n、、n2、n3、n。、化は順次
それぞれ誘電体基板1,第1の誘電体層2,第2の誘電
体層3,空気4,金属層5の物質の光の屈折率である。
この実施例では誘電体基板1,第1の誘電体層2,第2
の誘電体層3,金属層5として順次それぞれ、SlO2
基板、Al2O3層、SiO2層、Al層を用い、Si
O2基板1上に高周波スパッタ法(あるいはC.V.D
・法その他の方法)でAl2O3層2を数千Aないしは
、数μm付着させ、更に同様の方法でSiO2層3を数
千A程度付着させ、次にA1層5を数千Aマスク蒸着法
(あるいは蒸着後のフォトエッチング法等)によつて付
着させて構成している。Coupling of the input and output light with the incident light beam 6 in the first dielectric layer 2 can take place via prism couplers 7a, 7b. Also, n,, n2, n3, n. , are the optical refractive indexes of the materials of the dielectric substrate 1, the first dielectric layer 2, the second dielectric layer 3, the air 4, and the metal layer 5, respectively.
In this embodiment, a dielectric substrate 1, a first dielectric layer 2, a second
The dielectric layer 3 and the metal layer 5 are sequentially made of SlO2.
Using a substrate, Al2O3 layer, SiO2 layer, and Al layer, Si
High frequency sputtering method (or C.V.D.
・Al2O3 layer 2 of several thousand amps or several μm is deposited using the same method (method or other method), and then a SiO2 layer 3 of several thousand amps is deposited using the same method. Alternatively, the film may be deposited by a photo-etching method after vapor deposition, etc.).
このように構成すると、金属層5と第2の誘電体層3を
介して、接した第1の誘電体層2の等価屈折率すなわち
領域Aにおける第1誘電体層2の等価屈折率は約1.6
04となり空気4が接したB領域での第1の誘電体層2
の等価屈折率は約1.636となり、金属層5のパター
ンに従つて第1の誘電体層2に於ける屈折率差が生じる
。With this structure, the equivalent refractive index of the first dielectric layer 2 in contact with the metal layer 5 via the second dielectric layer 3, that is, the equivalent refractive index of the first dielectric layer 2 in the region A is approximately 1.6
04 and the first dielectric layer 2 in the B region in contact with the air 4
The equivalent refractive index of is approximately 1.636, and a refractive index difference occurs in the first dielectric layer 2 according to the pattern of the metal layer 5.
この屈折率差により、誘電体層2中に横方向境界面を発
生させ、入射光ビームの入射角度を適切に設定しておけ
ば、第2図、第3図に破線で示した、等価屈折率が低下
した領域Aの境界で反射される。またこの光反射器は、
入射角の設定によつて第4図に示す光分割器として用い
ることもできる。この実施例のように構成すると、容易
に製造できると共に、第2の誘電体層の効果によつて金
属層のオーミックな損失が小さくかつ光反射面である横
方向境界面での光散乱損失が少なく、効率の−良い光反
射器を得ることができる。Due to this refractive index difference, a lateral boundary surface is generated in the dielectric layer 2, and if the incident angle of the incident light beam is set appropriately, the equivalent refraction shown by the broken line in FIGS. 2 and 3 can be achieved. It is reflected at the boundary of area A where the rate has decreased. In addition, this light reflector
Depending on the setting of the incident angle, it can also be used as a light splitter as shown in FIG. With the structure of this embodiment, it is easy to manufacture, the ohmic loss of the metal layer is small due to the effect of the second dielectric layer, and the light scattering loss at the lateral boundary surface, which is a light reflecting surface, is reduced. It is possible to obtain a light reflector with low cost and high efficiency.
次に、第1の誘電体層2の上に第2の誘電体層3を設け
ることにより、第1誘電体層2における光の伝送損失が
低下する理由について述べる。Next, the reason why the optical transmission loss in the first dielectric layer 2 is reduced by providing the second dielectric layer 3 on the first dielectric layer 2 will be described.
誘電体層2中の光の伝播定数β,光の減衰定数αと.誘
電体層2の膜厚T2,誘電体層3の膜厚bとの関係は、
b=0とした良く知られている(例えばApplled
Optics第12巻第5号A.Reisinger参
照)関係式の拡張として次式で示すことができる。ここ
で、γ4=1,γ32=1,γ53=1(TEモードの
場合)(TMモードの場合)
であり、λoは滉の真空中での波長、ε1,E・2,E
3,E4,E5は波長λ。The propagation constant β of light in the dielectric layer 2, the attenuation constant α of light. The relationship between the thickness T2 of the dielectric layer 2 and the thickness b of the dielectric layer 3 is as follows:
It is well known that b = 0 (for example, Applied
Optics Vol. 12 No. 5 A. (Reisinger)) The relational expression can be expressed as an extension of the following expression. Here, γ4 = 1, γ32 = 1, γ53 = 1 (for TE mode) (for TM mode), λo is the wavelength in vacuum, ε1, E・2, E
3, E4, and E5 are wavelengths λ.
に対する誘電体基板1,誘電体層2,誘電体層3,空気
4,もしくは金属層5それぞれの物質の誘電率、ちは光
伝送路となる薄膜誘電体層の厚さ、bは中間絶縁層3の
厚さ、Nは光の次数、Nl,n2,n3,rl4,n5
はλoに対する誘電体基板1,誘電体層2,誘電体層3
,空気4,もしくは金属層5それぞれの物質の屈折率、
である。誘電体基板1,誘電体層2,誘電体層3,金属
層5の物質をそれぞれSlO.,A]203,Si02
,A1とし屈折率をn1=1.48,n2=1.88,
n3=1.48,穐=1.2−J7.Oとして、また波
長6328A(7)He−Neレーザー光を用いて、誘
電体層2の厚さを3000A,誘電体層3の厚さ300
0A,金属層5の欠除部分の横方向幅を8.5μmとし
た場合、TEOモードの伝播光に対する減衰量は、4d
B/Arl程度となり誘電体層3を設けない場合の85
dB/c!RL程度と比較して大巾に改善される。The dielectric constant of each substance of the dielectric substrate 1, dielectric layer 2, dielectric layer 3, air 4, or metal layer 5, that is, the thickness of the thin film dielectric layer that becomes the optical transmission path, and b is the intermediate insulating layer. 3 thickness, N is the order of light, Nl, n2, n3, rl4, n5
are dielectric substrate 1, dielectric layer 2, dielectric layer 3 for λo
, the refractive index of the substance of the air 4 or the metal layer 5,
It is. The materials of the dielectric substrate 1, dielectric layer 2, dielectric layer 3, and metal layer 5 are each made of SlO. ,A]203,Si02
, A1 and the refractive index n1=1.48, n2=1.88,
n3=1.48, Akira=1.2-J7. The thickness of the dielectric layer 2 was 3000A, and the thickness of the dielectric layer 3 was 300A, using a He-Ne laser beam with a wavelength of 6328A (7).
0A, and when the lateral width of the removed portion of the metal layer 5 is 8.5 μm, the amount of attenuation for the TEO mode propagating light is 4d.
B/Arl is about 85 in the case where the dielectric layer 3 is not provided.
dB/c! This is a huge improvement compared to RL.
なお、誘電体層2中の入射ビーム光5との入出力光の結
合はプリズムカプラー7の他に誘電体層2の表面に回折
格子を形成し入射ビーム光6との干渉により行うことも
できる。In addition to the prism coupler 7, coupling of input and output light with the incident beam 5 in the dielectric layer 2 can also be achieved by forming a diffraction grating on the surface of the dielectric layer 2 and interfering with the incident beam 6. .
また、誘電体層2中に半導体レーザ等の活性層を埋め込
む構造にしても良い。さらに、第5図に示すように金属
層5a,5bを対向させることにより両者間で光共振器
を構成することもできる。Alternatively, an active layer such as a semiconductor laser may be embedded in the dielectric layer 2. Furthermore, as shown in FIG. 5, by placing metal layers 5a and 5b facing each other, an optical resonator can be constructed between them.
以上説明したように、本発明によれば横方向境界面での
光の散乱を小さくかつ透過光の損失も小さくできるため
、反射効率の良い、あるいは容易に製作できる等の利点
を有する。As explained above, according to the present invention, the scattering of light at the lateral boundary surface can be reduced and the loss of transmitted light can also be reduced, so it has advantages such as good reflection efficiency and easy manufacture.
第1図は本発明の一実施例を示す光反射器の平面図、第
2図は第1図のX1−Y1線に沿つた断面図、第3図は
第1図のX2−Y2線に沿つた断面図、第4図は本発明
の他の実施例を示す光分割器の平面図、第5図は本発明
の他の実施例を示す光共振器の平面図である。
1・・・・・・誘電体基板、2・・・・・・第1の誘電
体層、3・・・・第2の誘電体層、4・・・・・空気、
5・・・・・金属層、6・・・・・・入射ビーム光、7
・・・・・・プリズムカプラー。Fig. 1 is a plan view of a light reflector showing an embodiment of the present invention, Fig. 2 is a sectional view taken along the line X1-Y1 in Fig. 1, and Fig. 3 is a sectional view taken along the line X2-Y2 in Fig. 1. FIG. 4 is a plan view of a light splitter showing another embodiment of the present invention, and FIG. 5 is a plan view of an optical resonator showing another embodiment of the present invention. 1... Dielectric substrate, 2... First dielectric layer, 3... Second dielectric layer, 4... Air,
5... Metal layer, 6... Incident beam light, 7
・・・・・・Prism coupler.
Claims (1)
較的大きい第1誘電体層と、この第1誘電体層上に積層
された比較的屈折率が小さく且つ前記第1誘電体層の特
定部分を導波する伝播光の損失が小さくなるような比較
的薄い第2誘電体層と、この第2誘電体層上に積層され
た金属層とを含み、前記第1誘電体層中に形成される光
伝送路に対して前記金属層が光の進行方向に垂直もしく
はある角度をもつて帯状に形成された光反射器。1. A first dielectric layer having a relatively high refractive index laminated on a dielectric base having a low refractive index, and the first dielectric layer having a relatively low refractive index and laminated on the first dielectric layer. a relatively thin second dielectric layer that reduces loss of propagating light guided through a specific portion of the first dielectric layer, and a metal layer laminated on the second dielectric layer; A light reflector in which the metal layer is formed in a band shape perpendicular to the traveling direction of light or at a certain angle with respect to an optical transmission path formed in the light transmission line.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15659177A JPS6051681B2 (en) | 1977-12-27 | 1977-12-27 | light reflector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15659177A JPS6051681B2 (en) | 1977-12-27 | 1977-12-27 | light reflector |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP49032643A Division JPS6051085B2 (en) | 1974-03-25 | 1974-03-25 | optical device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53118061A JPS53118061A (en) | 1978-10-16 |
JPS6051681B2 true JPS6051681B2 (en) | 1985-11-15 |
Family
ID=15631098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15659177A Expired JPS6051681B2 (en) | 1977-12-27 | 1977-12-27 | light reflector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6051681B2 (en) |
-
1977
- 1977-12-27 JP JP15659177A patent/JPS6051681B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS53118061A (en) | 1978-10-16 |
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