JPS6051322A - Cmos voltage converting circuit - Google Patents

Cmos voltage converting circuit

Info

Publication number
JPS6051322A
JPS6051322A JP58159261A JP15926183A JPS6051322A JP S6051322 A JPS6051322 A JP S6051322A JP 58159261 A JP58159261 A JP 58159261A JP 15926183 A JP15926183 A JP 15926183A JP S6051322 A JPS6051322 A JP S6051322A
Authority
JP
Japan
Prior art keywords
voltage
input signal
turned
power supply
supply system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58159261A
Inventor
Hideji Koike
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58159261A priority Critical patent/JPS6051322A/en
Publication of JPS6051322A publication Critical patent/JPS6051322A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01Modifications for accelerating switching
    • H03K19/017Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits

Abstract

PURPOSE:To convert an input signal from a low-voltage power supply system to a signal of a high-voltage power supply system by charging a capacitor beforehand and superposing a voltage between both ends of the capacitor onto an input voltage to drive a CMOS inverter of the high-voltage power supply system. CONSTITUTION:An input signal Vi is the signal of the low-voltage power supply system, and a transistor TRT1 is turned off when the input signal Vi is 0V. A voltage obtained by subtracting a voltage drop VF due to a diode from a power source voltage VP is applied to a capacitor C; and since this voltage is set to a value smaller than the value obtained by subtracting a threshold VTP (absolute value) of a TRT2 from a high voltage VPP, the TRT2 is turned on, and a high voltage is outputted to an output VO. When the input signal Vi starts rising to VCC, TRs T1 and T2 are turned on together; and when the input signal Vi rises furthermore, the TRT2 is turned off, and the output VO is 0V.
JP58159261A 1983-08-31 1983-08-31 Cmos voltage converting circuit Pending JPS6051322A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58159261A JPS6051322A (en) 1983-08-31 1983-08-31 Cmos voltage converting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58159261A JPS6051322A (en) 1983-08-31 1983-08-31 Cmos voltage converting circuit

Publications (1)

Publication Number Publication Date
JPS6051322A true JPS6051322A (en) 1985-03-22

Family

ID=15689893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58159261A Pending JPS6051322A (en) 1983-08-31 1983-08-31 Cmos voltage converting circuit

Country Status (1)

Country Link
JP (1) JPS6051322A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0218288A2 (en) * 1985-10-07 1987-04-15 SGS-THOMSON MICROELECTRONICS S.r.l. MOS power device usable both as an N-chanel MOS transistor and as a P-channel MOS transistor
JP2007525875A (en) * 2003-10-10 2007-09-06 ナノ−プロプライエタリー, インコーポレイテッド High voltage pulse driver using capacitive coupling
JP2014239551A (en) * 2003-02-12 2014-12-18 株式会社半導体エネルギー研究所 Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917161A (en) * 1972-06-01 1974-02-15
JPS5710534A (en) * 1980-06-23 1982-01-20 Nec Corp High-voltage mos inverter and its driving method
JPS5844762A (en) * 1981-04-24 1983-03-15 Nec Corp Integrated structure of high voltage complementary mos inverter array

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917161A (en) * 1972-06-01 1974-02-15
JPS5710534A (en) * 1980-06-23 1982-01-20 Nec Corp High-voltage mos inverter and its driving method
JPS5844762A (en) * 1981-04-24 1983-03-15 Nec Corp Integrated structure of high voltage complementary mos inverter array

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0218288A2 (en) * 1985-10-07 1987-04-15 SGS-THOMSON MICROELECTRONICS S.r.l. MOS power device usable both as an N-chanel MOS transistor and as a P-channel MOS transistor
JP2014239551A (en) * 2003-02-12 2014-12-18 株式会社半導体エネルギー研究所 Semiconductor device
JP2016034150A (en) * 2003-02-12 2016-03-10 株式会社半導体エネルギー研究所 Semiconductor device, display device, module and electronic apparatus
JP2007525875A (en) * 2003-10-10 2007-09-06 ナノ−プロプライエタリー, インコーポレイテッド High voltage pulse driver using capacitive coupling

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