JPS6046968A - Ceramic composition - Google Patents

Ceramic composition

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Publication number
JPS6046968A
JPS6046968A JP58152727A JP15272783A JPS6046968A JP S6046968 A JPS6046968 A JP S6046968A JP 58152727 A JP58152727 A JP 58152727A JP 15272783 A JP15272783 A JP 15272783A JP S6046968 A JPS6046968 A JP S6046968A
Authority
JP
Japan
Prior art keywords
composition
temperature
porcelain
points
cpb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58152727A
Other languages
Japanese (ja)
Inventor
治彦 宮本
米沢 正智
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58152727A priority Critical patent/JPS6046968A/en
Publication of JPS6046968A publication Critical patent/JPS6046968A/en
Pending legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は、磁器組成物、特に1100°C以下の低温で
焼結でき、誘電率が高く、室温および高温における絶縁
抵抗が高く、しかも機械的強度の高い磁器組成物に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a ceramic composition, particularly a ceramic composition that can be sintered at a low temperature of 1100°C or less, has a high dielectric constant, has high insulation resistance at room temperature and high temperature, and has high mechanical strength. It is related to.

従来、誘電体磁器組成物として、チタン酸バリウム(B
aTiOx)を主成分とする磁器が広く実用化されてい
ることは周知のとおりである。しかしながら、チタン酸
バリウム(BaTiO3)を主成分とするものは、焼結
温度が通常1300〜1400℃の高温である。このた
めこれを積層形コンデンサに利用する場合には内部電極
としてこの焼結温度に耐え得る材料、例えば白金、パラ
ジウムなどの高価な貴金属を使用しなければならず、製
造コストが高くつくという欠点がある。積層形コンデン
サを安く作るためには、銀、ニッケルなどを主成分とす
る安価な金属が内部電極に使用できるような、できるだ
け低温、特に1100℃以下で焼結できる磁器が必要で
ある。
Conventionally, barium titanate (B
It is well known that porcelain containing aTiOx as a main component has been widely put into practical use. However, those whose main component is barium titanate (BaTiO3) have a sintering temperature of usually 1300 to 1400°C. Therefore, when using this material in a multilayer capacitor, a material that can withstand this sintering temperature must be used for the internal electrodes, such as an expensive noble metal such as platinum or palladium, which has the disadvantage of high manufacturing costs. be. In order to manufacture multilayer capacitors at low cost, it is necessary to use porcelain that can be sintered at as low a temperature as possible, especially below 1100° C., so that inexpensive metals mainly composed of silver, nickel, etc. can be used for the internal electrodes.

また磁器組成物の電気的特性として、誘電率が高く、誘
電損失が小さく、絶縁抵抗が高いことが基本的に要求さ
れる。さらに絶縁抵抗の値に関して、高信頼性の部品を
要求する米国防総省の規格であるミリタリースペシフイ
ケイション(Mi 11tar7Specificat
ion)のMIL−C−55681Bでは、室温におけ
る値のみならず、125℃における値も定められている
、これをみてもわかるように、信頼性の高い磁器コンデ
ンサを得るためには、室温における値のみならず、最高
使用温度における絶縁抵抗も高い値をとることが必要で
ある。
Furthermore, the electrical properties of the ceramic composition are basically required to have a high dielectric constant, low dielectric loss, and high insulation resistance. Furthermore, regarding the value of insulation resistance, it complies with the Military Specification (Mi 11tar7 Specificat), a US Department of Defense standard that requires highly reliable components.
ion) MIL-C-55681B specifies not only the value at room temperature but also the value at 125°C.As you can see, in order to obtain a highly reliable ceramic capacitor, the value at room temperature is specified. In addition, it is necessary to have a high insulation resistance at the maximum operating temperature.

また、積層形チップコンデンサの場合は、チップコンデ
ンサを基板に実装したとき、基板とチップコンデンサを
構成している磁器との熱膨張係数の違いにより、チップ
コンデンサに機械的な歪が加わり、チップコンデンサに
クラックが発生したり、破損したりすることがある。ま
た、エポキシ系樹脂等を外装したディップコンデンサの
場合も、外装樹脂の応力で、ディップコンデンサにクラ
ックが発生する場合がある。いずれの場合も、コンデン
サを形成している磁器の機械的強度が低いほど、クラン
クが入りやすく、容易に破損するため、信頼性が低くな
る。したがって、磁器の機械的強度をできるだけ増大さ
せることは実用上極めて重要な問題である。
In addition, in the case of multilayer chip capacitors, when the chip capacitor is mounted on a board, mechanical strain is applied to the chip capacitor due to the difference in thermal expansion coefficient between the board and the porcelain that makes up the chip capacitor. Cracks may occur or damage may occur. Furthermore, even in the case of a dip capacitor coated with epoxy resin or the like, cracks may occur in the dip capacitor due to the stress of the coat resin. In either case, the lower the mechanical strength of the porcelain forming the capacitor, the easier it is to be cranked and damaged, resulting in lower reliability. Therefore, increasing the mechanical strength of porcelain as much as possible is an extremely important problem in practice.

ところでPb(PvIg172W1/2)Os PbT
i0g系磁器組成物については既にエヌ、エヌ、クライ
ニク、エイ。
By the way, Pb(PvIg172W1/2)Os PbT
Regarding i0g type porcelain compositions, N.N., Kleinik, and A.

アイ、マグラノフスカヤ(N、N、Krainik a
nd A、I。
Ai, Maglanovskaya (N, N, Krainik a)
nd A, I.

A、grarovskaya(Fiziko Tver
dogo Te1a+Vo、2+ No。
A, grarovskaya (Fiziko Tver
dogo Te1a+Vo, 2+ No.

1、 pp 70〜72+ Janvara 1960
))より提案があり、また(SrxPb 1−、T i
O* )a(PbMg o、sWo、s Os ) b
Cただし、x=θ〜0.10.a−0,35〜0.5.
b−0,5〜0.65.a+b=1〕については、モノ
リシックコンデンサおよびその製造方法として特開昭5
2−21662号公報に開示され、また誘電体粉末組成
物として特開昭52−21699号公報に開示されてい
る。しかしながら、いずれも比抵抗に関する開示は全く
されておらず、これらの磁器組成物の実用性は明らかに
されていない。まだ、本発明者等は既に910」50℃
の温度でm結−11’き、Pb (Mg x7zWt7
x)OsとPbTi0.との2成分系からなり、これを
、cpb avb 17xw17J os )X (P
 b T 10LI、1と表わしたときに、Xが0.6
5<X≦1.00の範囲にある組成物を提案した。この
組成物は、誘電率と比抵抗との積の値が高く、誘電損失
の小さい優れた電気的特性を有しているものである。し
かしながら、上記組成物はいずれも機械的強度が低いた
め、その用途は自ら狭い範囲に限定せざるを1「なかっ
た。
1, pp 70-72+ Janvara 1960
)), and (SrxPb 1-, T i
O*)a(PbMgo,sWo,sOs)b
C However, x=θ~0.10. a-0.35 to 0.5.
b-0.5 to 0.65. a+b=1], a monolithic capacitor and its manufacturing method are described in Japanese Patent Application Laid-open No. 5
It is disclosed in Japanese Patent Application Laid-open No. 2-21662, and as a dielectric powder composition in Japanese Patent Application Laid-Open No. 52-21699. However, none of them discloses any specific resistance, and the practicality of these ceramic compositions has not been clarified. However, the inventors have already tested the temperature at 910"50℃.
At a temperature of m-11', Pb (Mg x7zWt7
x) Os and PbTi0. It consists of a two-component system of cpb avb 17xw17J os )X (P
b When expressed as T 10LI, 1, X is 0.6
A composition in the range of 5<X≦1.00 was proposed. This composition has excellent electrical properties such as a high value of the product of dielectric constant and specific resistance and low dielectric loss. However, since all of the above compositions have low mechanical strength, their applications have had to be limited to a narrow range.

また、Pb(Mg1/2W172)Oa PbT103
系を含む3成分系については、特開昭55−11101
1号公報においてPb(Mg1/2Wエフ2)03−P
bTiOs Pb(Mg173Nb27+)Os系が、
特開昭55−117809号公報においてPb (Mg
 、、、 W172)Os PbTiOs Pb(Mg
173Ta2/3)Os系が、それぞれ開示されている
。しかしながら、いずれも比抵抗や機(成約強度に関す
る開示は全くされておらず、これらの磁器組成物の実用
性も明らかにされていないO また、本発明者等も既にpbcMg、/!w、/2)Q
3PbTiQ−Pb(InX/□Nb□7□)033成
分組成物を既に提案している。この組成物は、900〜
1100℃の低温領域で焼結でき、誘電率が高く、誘電
損失が小さく、室温および高温における絶縁抵抗の値が
高い優れた特性を有しているものである。しかしながら
、この組成物は、機械的強度が低いため、その用途は自
ら狭い範囲に限定せざるを得なかった。
Also, Pb(Mg1/2W172)Oa PbT103
For three-component systems including
In Publication No. 1, Pb(Mg1/2W F2)03-P
bTiOs Pb(Mg173Nb27+)Os system is
In JP-A-55-117809, Pb (Mg
,,, W172)Os PbTiOs Pb(Mg
173Ta2/3)Os systems are disclosed respectively. However, none of them discloses the specific resistance or mechanical strength, and the practicality of these porcelain compositions has also not been clarified. 2)Q
3PbTiQ-Pb(InX/□Nb□7□)033 component composition has already been proposed. This composition is 900~
It can be sintered at a low temperature of 1100°C, has excellent properties such as high dielectric constant, low dielectric loss, and high insulation resistance at room temperature and high temperature. However, since this composition has low mechanical strength, its use has to be limited to a narrow range.

本発明は、以上の点にかんがみ、900〜1100℃の
低温領域で焼結でき、誘電率が高く、誘電損失が小さく
、室温および高温における絶縁抵抗の値が高い優れた電
気的特性を有し、特に機械的強度も大きい信頼性の高い
磁器組成物を提供しようとするものであり、マグネシウ
ム・タングステン酸鉛(Pb (Mg 、7zWv□)
0.〕、チタン酸鉛(PbTiOs〕およびインジウム
”−オプ酸鉛(Pb(I n 17tNb xyx)0
1 )からなる3成分組成物をcpb(至)1.、w、
□)Ox :] x CPb T iへ〕ア[pb (
I n 1.Nb 1,2)Os 〕、と表わしたとき
に(ただし、x”)”z=1.00)、この3成分組成
図において以下の組成点 (x = 0.796. y = 0.199. z 
= 0.005 )(x=0.48 、7=0.12 
、 z=0.40 )(x=0.21 、 )’=0.
09 、 z=0.70 )(x=0.12 、y=0
.18 、Z=0.70 )(x = 0.398. 
y = 0.597. z = 0.005 )を結ぶ
線上、およびこの5点に1711すれる組成範囲にある
主成分組成物に、副成分として、マンガン・タンタル酸
鉛[Pb (Mn1/□Ta 1/2)Os−’を主成
分に対して、0.05〜4mo6%添加含有せしめてな
ることを特徴とするものである。
In view of the above points, the present invention can be sintered in the low temperature range of 900 to 1100°C, has excellent electrical properties such as high dielectric constant, low dielectric loss, and high insulation resistance at room temperature and high temperature. The purpose is to provide a highly reliable porcelain composition with particularly high mechanical strength, and magnesium lead tungstate (Pb (Mg, 7zWv□)
0. ], lead titanate (PbTiOs) and indium”-lead opate (Pb(I n 17tNb xyx)0
1) to cpb (to) 1. ,w,
□) Ox :] x CPb T i] A [pb (
I n 1. Nb 1,2)Os ], (where x")"z = 1.00), the following composition point (x = 0.796. y = 0.199. z
= 0.005) (x=0.48, 7=0.12
, z=0.40 ) (x=0.21 , )'=0.
09, z=0.70) (x=0.12, y=0
.. 18, Z=0.70) (x=0.398.
y=0.597. z = 0.005) and in the composition range that lies within these five points, manganese lead tantalate [Pb (Mn1/□Ta 1/2)Os- It is characterized by containing 0.05 to 4 mo6% of ' to the main component.

以下本発明を実施例により詳細に説明する。The present invention will be explained in detail below using examples.

出発原料として綽度99.9チ以上の酸化鉛(I)bO
)、酸化マグネシウム(MgO) 、r?l化夕/ゲス
テン(vvOs)、酸化チタン(TiO++)、酸化イ
ンジウム(InzOi ) 、I’l化=、1プ(Nb
20q) 、酸化タンク# (Ta205)および炭酸
マンガン(MnCOx )を使用し、表に示した配合比
となるように各々秤量した。次に秤量した各月利乾燥後
、有機バインダーを入れ、整粒後プレスし、試料として
直径!6 欝i、厚さ約2順の円板4枚と、直径J6π
罵、厚さ約10 ynmの円柱を作成した。次に試料は
空気中900〜1100℃の温度で1時間焼結した。
Lead (I) oxide with a purity of 99.9% or higher as a starting material
), magnesium oxide (MgO), r? I'l oxidation/gesten (vvOs), titanium oxide (TiO++), indium oxide (InzOi), I'l oxidation=, 1p (Nb
20q), oxidation tank # (Ta205), and manganese carbonate (MnCOx) were used, and each was weighed so as to have the compounding ratio shown in the table. Next, after weighing and drying each month, add an organic binder, size the particles, press, and measure the diameter as a sample! 6 欝i, 4 disks of approximately 2 thicknesses and a diameter of J6π
A cylinder with a thickness of about 10 ynm was created. The samples were then sintered in air at a temperature of 900-1100°C for 1 hour.

焼結した円板4枚の上下面に600℃で銀電極を焼付け
、デジタルLCRメーターで周波数IKI(z 、電圧
IVr、rn、s、温度20℃で8聞と誘電損失を測定
し、誘電率を算出した・ 次に超絶縁抵抗計で50Vの電Hik1分間印加しで、
絶縁抵抗を温度20℃と125℃で測定し、比抵抗を算
出した。
Silver electrodes were baked on the top and bottom surfaces of four sintered disks at 600°C, and the dielectric loss was measured using a digital LCR meter at frequency IKI (z), voltage IVr, rn, s, and temperature 20°C.・Next, apply a 50V electric current for 1 minute using a super insulation resistance meter,
Insulation resistance was measured at temperatures of 20°C and 125°C, and specific resistance was calculated.

機械的性賀を抗折強度で評価するため、焼結した円柱か
ら厚さ0.5龍、幅2隨、長さ約13謂の矩形洲〕をめ
た。ただし、lは支点間距離、tは試料の厚み、Wは試
料の幅である。電気的特性は円板試料4点の平均値、抗
折強度は矩形板試料10点の平均値よりめた。このよう
にして得られた磁器の主成分[Pb(Mg1/2W1.
、)03 )、[PbTiOs )y(Pb(In1/
2Nbl 7B)Os Ezの配合比X * 7 + 
1および副成分添加量と誘電率、誘電損失、20℃およ
び125℃における比抵抗、および抗折強度の関係を次
表に示す。
In order to evaluate the mechanical resistance in terms of bending strength, a rectangular shape with a thickness of 0.5 mm, a width of 2 mm, and a length of about 13 mm was cut from a sintered cylinder. Here, l is the distance between the supporting points, t is the thickness of the sample, and W is the width of the sample. The electrical properties were determined from the average value of 4 disk samples, and the bending strength was determined from the average value of 10 rectangular plate samples. The main component of the porcelain thus obtained was [Pb(Mg1/2W1.
, )03 ), [PbTiOs )y(Pb(In1/
2Nbl 7B) Os Ez blending ratio X * 7 +
The following table shows the relationship between the amounts of 1 and subcomponents added, dielectric constant, dielectric loss, resistivity at 20° C. and 125° C., and bending strength.

表に示した結果から明らかなように、(Pb (Mg□
7.W17.)Os −PbTiOs −Pb(In、
7tNb1/2)Os 3成分組成物にPb(λ紬、7
□Ta工/2)Osをl庁定の割合いで添加含有せしめ
たものは、誘電率が1060〜3710と高く、誘電損
失が0.2〜2.9チと小さく、比抵抗が20℃におい
て1.8 X 10′2〜7.9 X 1013Ω’l
と高く、しかも125℃においても8.2 XlQ10
〜1.2 X 1013Ω・鑞という高い値を示し、さ
らに抗折強度も1000〜1390 kl?/cffl
と実用上十分高い値を示す信頼性の晶い実用性の極めて
高い磁器組成物であることがわかる。このように優れた
特性を示す本発明の磁器組成物は焼結温度が1100℃
以下の低温であるだめ、積層コンデンサの内部電極の低
価格化を実現できると共に、省エネルギーや炉材の節約
にもなるという極めて優れた効果も生じる。図は本発明
の主成分組成範囲を示す。図に示した番号は表に示した
主成分配合比の番号に対応させである。
As is clear from the results shown in the table, (Pb (Mg□
7. W17. )Os-PbTiOs-Pb(In,
7tNb1/2)Os Pb (λ Tsumugi, 7tNb1/2)Os
□Ta/2) Those containing Os at the prescribed ratio have a high dielectric constant of 1060 to 3710, a small dielectric loss of 0.2 to 2.9 inches, and a specific resistance at 20°C. 1.8 x 10'2~7.9 x 1013Ω'l
8.2 XlQ10 even at 125℃
It shows a high value of ~1.2 x 1013 Ω・further, and also has a bending strength of 1000~1390 kl? /cffl
It can be seen that this is a highly reliable and highly practical porcelain composition that exhibits a sufficiently high value for practical use. The porcelain composition of the present invention exhibiting such excellent properties has a sintering temperature of 1100°C.
If the temperature is lower than that, it is possible to reduce the cost of the internal electrodes of multilayer capacitors, and it also has the extremely excellent effect of saving energy and furnace materials. The figure shows the main component composition range of the present invention. The numbers shown in the figure correspond to the numbers of the main component blending ratios shown in the table.

本発明は(:Pb(MgMu1/a)Os :)xCP
bTiOi :)y(Pb(In1/2Nb 1/2)
On ) 、!: 表t) L k トきに(ただし、
x+y+z=1.oo)、この3成分組成図において、
以下の組成(X=0.796 、y=0.199 、z
=o、o05 )(X=0.48 、y=0.12 、
z=0.40 )(x=0.21 、y=0.09 、
z=0.70 )(x=0.12 、)’=0.18 
、z=0.70 )(x=0.398 、y=0.59
7 、z=0.OQ5 )を結ぶ線上、およびこの5点
に囲まれる組成範囲に限定され、副成分の添加含有量は
主成分に対して0.05〜4mo 1%に限定される。
The present invention relates to (:Pb(MgMu1/a)Os:)xCP
bTiOi :)y(Pb(In1/2Nb1/2)
On),! : table t) L k tokini (however,
x+y+z=1. oo), in this three-component composition diagram,
The following composition (X=0.796, y=0.199, z
=o, o05) (X=0.48, y=0.12,
z=0.40) (x=0.21, y=0.09,
z=0.70)(x=0.12,)'=0.18
, z=0.70) (x=0.398, y=0.59
7, z=0. The composition range is limited to the line connecting OQ5) and the composition range surrounded by these five points, and the added content of the subcomponent is limited to 0.05 to 4 mo 1% with respect to the main component.

主成分組成範囲において、組成点2,15を結ぶ線の外
側では高温における比抵抗が小さくなり実用的でない0
組成点15.16,7,3.2を結ぶ線の外側では誘電
率が小さくなり実用的でない。また副成分であるPb 
(Mn 、、Ta17□)o、の添加量が0.05mo
7%未満では抗折強度の改善効果が小さく、4mo1%
を超えると逆に抗折強度が小さくなるため実用的でない
In the main component composition range, outside the line connecting composition points 2 and 15, the specific resistance at high temperatures becomes small, making it impractical.
Outside the line connecting composition points 15.16, 7, and 3.2, the dielectric constant becomes small and is not practical. In addition, the subcomponent Pb
The amount of (Mn,, Ta17□)o added is 0.05 mo
If it is less than 7%, the effect of improving bending strength is small, and 4mo1%
On the other hand, if it exceeds this, the bending strength decreases, which is not practical.

【図面の簡単な説明】 図は本発明の主成分組成範囲と実施例に示した組成点を
示す図である。
BRIEF DESCRIPTION OF THE DRAWINGS The figure is a diagram showing the main component composition range of the present invention and the composition points shown in Examples.

Claims (1)

【特許請求の範囲】[Claims] (1)マグネシウム・タングステン酸m CPb(Mg
、/□W工、)OS)、チタン酸鉛(PbTi03:)
およびインジウム・ニオブrr’p鉛(Pb (In 
、7xNb 1/2)03 :)からなる3成分組成物
をCPb (Mg r/、Wl、□)Os ] 、CP
bT 10s )y CPb (I n1/2Nb 1
/2)O3〕zと表わしたときに(ただし、X + 7
 + Z=1.00 )、この3成分組成図において、
以下の組成点 (x=0.796 、y=0.199 、z=0.00
5)(x=0.48 、y=0.12 、z=0.40
 )(x=0.21 、y=o、oct 、z=0.7
0 )(x=0.12 、 7=0.18 、z=0.
70 )(x=0.398 、 7=0.597 、z
=0.005)を結ぶ線上、およびこの5点に囲まれる
組成範囲にある主成分組成物に副成分としてマンガン・
タンタル酸鉛[Pb(”n1/2” 1/2)Ox :
)を主成分に対して0.05〜4mol修添加含有せし
めてなることを特徴とする磁器組成物。
(1) Magnesium tungstate m CPb (Mg
, /□W engineering, )OS), lead titanate (PbTi03:)
and indium niobium rr'p lead (Pb (In
, 7xNb 1/2) 03 :) CPb (Mg r/, Wl, □) Os ], CP
bT 10s )y CPb (I n1/2Nb 1
/2) When expressed as O3]z (however, X + 7
+ Z = 1.00), in this three-component composition diagram,
The following composition points (x=0.796, y=0.199, z=0.00
5) (x=0.48, y=0.12, z=0.40
) (x=0.21, y=o, oct, z=0.7
0) (x=0.12, 7=0.18, z=0.
70) (x=0.398, 7=0.597, z
= 0.005) and in the composition range surrounded by these five points, manganese and
Lead tantalate [Pb("n1/2" 1/2)Ox:
1.) A porcelain composition characterized in that it contains 0.05 to 4 mol of 0.05 to 4 mol of a main component.
JP58152727A 1983-08-22 1983-08-22 Ceramic composition Pending JPS6046968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58152727A JPS6046968A (en) 1983-08-22 1983-08-22 Ceramic composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58152727A JPS6046968A (en) 1983-08-22 1983-08-22 Ceramic composition

Publications (1)

Publication Number Publication Date
JPS6046968A true JPS6046968A (en) 1985-03-14

Family

ID=15546831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58152727A Pending JPS6046968A (en) 1983-08-22 1983-08-22 Ceramic composition

Country Status (1)

Country Link
JP (1) JPS6046968A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0426032U (en) * 1990-06-21 1992-03-02
JPH04135401U (en) * 1991-06-04 1992-12-16 今村 光雄 Clamp device for tube-shaped film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0426032U (en) * 1990-06-21 1992-03-02
JPH04135401U (en) * 1991-06-04 1992-12-16 今村 光雄 Clamp device for tube-shaped film

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