JPS6046966A - Ceramic composition - Google Patents

Ceramic composition

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Publication number
JPS6046966A
JPS6046966A JP58152725A JP15272583A JPS6046966A JP S6046966 A JPS6046966 A JP S6046966A JP 58152725 A JP58152725 A JP 58152725A JP 15272583 A JP15272583 A JP 15272583A JP S6046966 A JPS6046966 A JP S6046966A
Authority
JP
Japan
Prior art keywords
composition
temperature
porcelain
points
main component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58152725A
Other languages
Japanese (ja)
Inventor
治彦 宮本
米沢 正智
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58152725A priority Critical patent/JPS6046966A/en
Publication of JPS6046966A publication Critical patent/JPS6046966A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は、磁器組成物、特に1050’C以下の低温で
焼結でき、誘′ε率が高く、室温および高温における絶
縁抵抗が高く、しかも機械的−i!Ii度の高い磁2(
組成物に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a porcelain composition that can be sintered at a low temperature, particularly below 1050'C, has a high dielectric constant, has a high insulation resistance at room temperature and high temperature, and has a mechanical -i! Magnetic 2 with high Ii degree (
The present invention relates to a composition.

従来、誘電体磁訂組成物として、チタン酸バリウム(B
aTiOs)を主成分とする磁器が広く実用化されてい
ることは周知のとおりである。しかしながら、チタン酸
バリウム(BaTiO3)を主成分とするものは、焼結
温度が通當1300〜1400℃の高温である。このた
めこれを積層形コンデンサに利用する場合には内部電極
としてこの焼結温度に耐え得る第4料、例えば白金、パ
ラジウムなどの高価な青金4を使用しなければならず、
製造コストが高くつくという欠点がある。積層形コンデ
ンサを女く作るためには、銀、ニッケル、などを主成分
とする安価な金属が内部電極に使用できるような、でき
るだけ低温、特に1050℃以下で焼結できる磁器が必
要である。
Conventionally, barium titanate (B
It is well known that porcelain containing aTiOs as a main component has been widely put into practical use. However, those whose main component is barium titanate (BaTiO3) have a sintering temperature of generally 1300 to 1400°C. Therefore, when this is used in a multilayer capacitor, a fourth material that can withstand this sintering temperature must be used as the internal electrode, such as an expensive blue metal such as platinum or palladium.
The disadvantage is that manufacturing costs are high. In order to make multilayer capacitors more attractive, it is necessary to use porcelain that can be sintered at as low a temperature as possible, especially below 1050°C, so that inexpensive metals mainly composed of silver, nickel, etc. can be used for the internal electrodes.

また磁器組成物の電気的特性として、誘電率が高く、誘
電損失が小さく、絶縁抵抗が高いことが基本的に要求さ
れる。さらに絶縁抵抗の値に関して、高信頼性の部品を
要求する米国防総省の規格であるミリタリースベシフイ
ケイション(Mi 1 i tar7Specific
ation )のMIL −C−55681Bでは、室
温における値のみならず、125℃における値も定めら
れており、これをみてもわかるように信頼性の高い磁器
コンデンサを得るためには温源における値のみならず、
最高使用温度における絶縁抵抗も高い値をとることが必
要である。
Furthermore, the electrical properties of the ceramic composition are basically required to have a high dielectric constant, low dielectric loss, and high insulation resistance. Furthermore, regarding the value of insulation resistance, the Military Specification (Mi 1 i tar 7 Specification) is a US Department of Defense standard that requires highly reliable components.
In the MIL-C-55681B of MIL-C-55681B, not only the value at room temperature but also the value at 125°C is specified, and as you can see, in order to obtain a highly reliable ceramic capacitor, only the value at the temperature source is specified. Not,
It is also necessary to have a high insulation resistance at the maximum operating temperature.

まだ、積層形チップコンデンサの場合は、チップコンデ
ンサを基板に実装したとき、基板とチップコンデンサを
構成している磁器との熱膨張係数の違いにより、チップ
コンデンサに機械的な歪が加わり、チップコンデンサに
クラックが発生したり、破損したりすることがある。ま
た、エポキシ系樹脂等を外装したディップコンデンサの
場合も、外装樹脂の応力で、ディップコンデンサにクラ
ックが発生する場合がある。いずれの場合も、コンデン
サを形成している磁器の機械的強度が低いほど、クラッ
クが入シやすく、容易に破損するため、信頼性が低くな
る。したがって、磁器の機械的強度をできるだけ増大さ
せることは実用上極めて型費な問題である。
However, in the case of multilayer chip capacitors, when the chip capacitor is mounted on a board, mechanical strain is applied to the chip capacitor due to the difference in thermal expansion coefficient between the board and the porcelain that makes up the chip capacitor. Cracks may occur or damage may occur. Furthermore, even in the case of a dip capacitor coated with epoxy resin or the like, cracks may occur in the dip capacitor due to the stress of the coat resin. In either case, the lower the mechanical strength of the porcelain forming the capacitor, the more likely it is to crack and break, resulting in lower reliability. Therefore, increasing the mechanical strength of porcelain as much as possible is a practical and extremely expensive problem.

ところでPb(Mg17xWs7JCh PbTiOs
系磁器組成物については既にエヌ、エヌ、クライニク、
エイ。
By the way, Pb(Mg17xWs7JCh PbTiOs
As for porcelain compositions, N.N., Kleinik,
Stingray.

アイ、マグラノフスカヤ(N、N、Krainik a
nd A、I。
Ai, Maglanovskaya (N, N, Krainik a)
nd A, I.

Agrarovskaya(Fiziko Tverd
ogo Te1a、 Vo、2. No。
Agrarovskaya (Fiziko Tverd
ogo Te1a, Vo, 2. No.

1・pp 70〜72. Janvara 1960)
)より提案があり、また(SrxPb 1−xTjOs
 ) a(PbMg o、sWo、503) B (た
だし、x=o〜0.10 、a=0.35〜0.5 、
b=0.5〜0.65 、a + b=1 )について
は、モノリシックコンデンサおよびその製造方法どして
特開昭52−21662号公報に開示され、また誘電体
粉末組成物として特開昭52−21669号公報に開示
されている。しかしながら、いずれも比抵抗に関する開
示は全くされておらず、これらの磁器組成物の実用性は
明らかにされていない。
1.pp 70-72. Janvara 1960)
), and (SrxPb 1-xTjOs
) a(PbMgo, sWo, 503) B (where x=o~0.10, a=0.35~0.5,
b=0.5 to 0.65, a+b=1), a monolithic capacitor and its manufacturing method are disclosed in JP-A-52-21662, and a dielectric powder composition is disclosed in JP-A-52-21662. It is disclosed in Japanese Patent No. 52-21669. However, none of them discloses any specific resistance, and the practicality of these ceramic compositions has not been clarified.

一方、本発明者等は既に910−950℃の温度で簡結
でき、Pb (Mgl/、Wl、、)□sとPb T 
i Osとの2成分系からなり、これを、[Pb (M
g I/□W、、)03 )工(PbTiOs ) 1
−2と表わしだときに、Xが0.65<X≦1.00の
範囲にある組成物を提案した。この組成物は、誘電率と
比抵抗の積の値が高く、誘電損失の小さい優れた電気的
特性を有しているものである。しかしながら、上記組成
物はいずれも機械的強度が低いため、その用途は自ら狭
い範囲に限定せざるを得なかった。
On the other hand, the present inventors have already been able to simplify the process at a temperature of 910-950°C, and Pb (Mgl/, Wl, ,) □s and Pb T
It consists of a two-component system with iOs, which is combined with [Pb (M
g I/□W, ) 03 ) Engineering (PbTiOs) 1
-2, we proposed a composition in which X is in the range of 0.65<X≦1.00. This composition has excellent electrical properties such as a high value of the product of dielectric constant and specific resistance and low dielectric loss. However, since all of the above compositions have low mechanical strength, their applications have had to be limited to a narrow range.

また、Pb(Mg17zW17z)Os PbTiOs
系を含む3成分系についてtl、%開昭55−1110
11号公報においてPb(MgニアzW+7z)On 
PbTiOs Pb(Mg17sNbz7a)Os系が
、特開昭55−117809号公報においてpb (M
g 1/2 W□7JOs PbTiOs Pb(h7
Ig173Tat7.)Ox系が、それぞれ開示されて
いる。しかしながら、いずれも比抵抗や機械的強度に関
する開示は全くされておらず、これらの磁器組成物の実
用性も明らかにされていない。
Also, Pb(Mg17zW17z)Os PbTiOs
For three-component systems including systems, tl, % 1986-1110
In Publication No. 11, Pb(MgniazW+7z)On
PbTiOs Pb(Mg17sNbz7a)Os system was disclosed in JP-A-55-117809 as pb (M
g 1/2 W□7JOs PbTiOs Pb(h7
Ig173Tat7. ) Ox systems are disclosed respectively. However, none of them discloses any specific resistance or mechanical strength, and the practicality of these ceramic compositions has not been clarified.

本発明者等も既にPb(Mg17□Wz7JOs Pb
Ti03−Pb(Nil/3Nb、、3)On 3成分
組成物を既に提案している。この組成物は、900〜1
050℃の低温領域で焼結でき、誘電率が高く、誘電損
失が小さく、室温および高温における絶縁抵抗の値が高
い優れた特性を有しているものである。しかしながら、
この組成物は、機械的強度が低いため、その用途は自ら
狭い範囲に限定せざるを得なかった。
The present inventors have also already developed Pb (Mg17□Wz7JOs Pb
A Ti03-Pb(Nil/3Nb,,3)On three-component composition has already been proposed. This composition has 900 to 1
It can be sintered in the low temperature range of 050°C, has excellent properties such as high dielectric constant, low dielectric loss, and high insulation resistance at room temperature and high temperature. however,
Since this composition has low mechanical strength, its use has had to be limited to a narrow range.

本発明は、以上の点にかんがみ、900〜1050℃の
低温領域で焼結でき、誘電率が高く、誘電損失が小さく
、室温および高温における絶縁抵抗の値が高い優れた電
気的特性を有し、特に機械的強度も大きい信頼性の高い
磁器組成物を提供しようとするものであり、マグネシウ
ム管タングステン酸鉛(Pb(Mg□ztWt/1)O
s )、チタン酸鉛(PbTiOs)およびニッケル・
ニオブ酸鉛(Pb (Ni 、、、Nb 、、)Q、 
)からなる3成分組成物を、(pb (m l/、wl
、)Os )工(PbTiOら[pb (Nl 11B
Nb 1/3)Ox 〕zと表わしだときに(ただし、
X+3’+z=1.OO)この3成分組成図において以
下の組成点 (X=0.693 、 y=0.297 、 z=0.
01 )(x=0.495 、 y=o、495 、z
=0.01 )(X=0.195 、 y=0.455
 、 z=0.35 )(X=0.10 、 V=0.
40 、 z=0.50)(X=0.06 、y=0.
24 、z=0.70 )を結ぶ線上、およびこの5点
に囲まれる組成範囲にある主成分組成物に、副成分とし
て、マンガン・タンタル酸鉛[:Pb(Din□/2T
a s/□)0.〕を主成分に対して、0.05〜6m
o1%添加含有せしめてなることを特徴とするものであ
る。
In view of the above points, the present invention can be sintered in the low temperature range of 900 to 1050°C, has excellent electrical properties such as high dielectric constant, low dielectric loss, and high insulation resistance at room temperature and high temperature. The purpose is to provide a highly reliable porcelain composition with particularly high mechanical strength, and a magnesium tube lead tungstate (Pb(Mg□ztWt/1)O
s), lead titanate (PbTiOs) and nickel.
Lead niobate (Pb (Ni,,,Nb,,)Q,
), a three-component composition consisting of (pb (ml/, wl)
, ) Os ) engineering (PbTiO et al. [pb (Nl 11B
Nb 1/3) Ox ] When expressed as z (however,
X+3'+z=1. OO) In this three-component composition diagram, the following composition points (X=0.693, y=0.297, z=0.
01) (x=0.495, y=o, 495, z
=0.01) (X=0.195, y=0.455
, z=0.35) (X=0.10, V=0.
40, z=0.50) (X=0.06, y=0.
24, z=0.70) and in the composition range surrounded by these five points, manganese lead tantalate [:Pb(Din□/2T
a s/□)0. ] to the main component, 0.05 to 6 m
It is characterized by containing 1% o.

以下、本発明を実施例により詳細に説明する、。Hereinafter, the present invention will be explained in detail with reference to Examples.

出発原料として純度99.9%以上の酸化鉛(PbO)
、Cutマグネシウム(MgO) 、4R化タングステ
ン(Wo、)、酸化チタン(TiOx)、酸化ニッケル
(Nip)、酸化ニオブ(Nb+ Os)、酸化タンク
# (Ta20s)および炭酸マンガン(MnCOs 
)を使用し、表に示した配合比となるように各々秤量し
た。次に秤量した各材料をボールミル中で湿式混合した
段75o〜soo’cで予焼を行ない、この粉末をボー
ルミルで粉砕し、日別、乾燥後、有機バインダーを入れ
、整粒後プレスし、試料としてm ’& 16 arm
 、厚さ約2朋の円板4枚と、直径16 *x s厚さ
約10朋の円柱を作成した。次に試料は空気中900〜
1050℃の温度で1時間焼結した。
Lead oxide (PbO) with a purity of 99.9% or more as a starting material
, Cut magnesium (MgO), 4R tungsten (Wo, ), titanium oxide (TiOx), nickel oxide (Nip), niobium oxide (Nb+Os), oxidation tank # (Ta20s) and manganese carbonate (MnCOs)
), and each was weighed to achieve the blending ratio shown in the table. Next, the weighed materials were wet-mixed in a ball mill and pre-baked in stages 75o to soo'c, and this powder was ground in a ball mill, dried, and then added with an organic binder, sized, and then pressed. m'& 16 arm as sample
, four disks with a thickness of about 2 mm and a cylinder with a diameter of 16*s and a thickness of about 10 mm were created. Next, the sample is 900 ~
Sintering was carried out at a temperature of 1050° C. for 1 hour.

焼結した円板4枚の上下面に60θ℃で銀電極を焼付け
、デジタルLCRメーターで周波数IKHz 、 m圧
IVr、m、s、温度20℃で容是と ’tTi、損失
を測定し、誘電率を鍔゛出した。。
Silver electrodes were baked on the top and bottom surfaces of four sintered disks at 60θ℃, and the conductivity, tTi, and loss were measured using a digital LCR meter at frequency IKHz, mpressure IVr, m, and s, and temperature 20℃. The rate was set high. .

次に超絶縁抵抗計で50Vの電用を1分間印加して、絶
縁抵抗を温度20°Cと125°Cテ1ill定し、比
抵抗を算出した。
Next, a voltage of 50V was applied for 1 minute using a super insulation resistance meter to determine the insulation resistance at temperatures of 20°C and 125°C, and the specific resistance was calculated.

機械的性質を抗折強仰でtY価するため、焼結した円柱
から厚さ帆5 mm、幅2+11111.長さ約1:3
朋の矩形板を10枚切り出しだ。支点間距離を9藷にと
り、kq/ωd〕なる式に従い、抗折強度τC/に9/
cvI〕をめた。
In order to evaluate the mechanical properties in terms of bending stress and tY value, a sintered cylinder with a thickness of 5 mm and a width of 2+11111. Length approximately 1:3
Cut out 10 pieces of my friend's rectangular board. Taking the distance between the fulcrums as 9, and according to the formula kq/ωd], the bending strength τC/ is 9/
cvI].

ただし、lは支点間圧j准、tは試料の厚み、W +=
ま試料の幅である。電気的特性(弓、円板試料4点の甲
−均値、抗折強度は矩形板試料10点の平均値よりめた
。このようにしてイリら21.た磁器の主成分〔Pb(
Mg 1/xWx/2)Os )X[P bT i O
s +ly (Pb (Ni 、/3Nb 、/3)O
s ) 2の配合比X、V+zおよび副成分添加量と1
透1[率、誘電損失、20℃および125℃における比
抵抗、および抗折強度の関係を次表に示す。
However, l is the inter-support pressure j, t is the thickness of the sample, W +=
It is the width of the sample. The electrical properties (bow, average value of 4 disk samples, and bending strength were determined from the average value of 10 rectangular plate samples. In this way, Ili et al. 21.
Mg 1/xWx/2)Os )X[P bT i O
s +ly (Pb (Ni, /3Nb, /3)O
s) Mixing ratio X, V+z of 2 and addition amount of subcomponents and 1
The following table shows the relationship among the transmittance, dielectric loss, resistivity at 20°C and 125°C, and bending strength.

表に示した結果から明らかなようにPb (]VIg 
sy□W17□)Os P b T 10s Pb (
Nl 1/3Nb 、/3)Os 3成分組成物に副成
分として、pb (Mn 1/、Ta l/1)03を
特定の割合いで添加含有せしめたものは、誘電率が31
00〜13530と高く、誘電損失が0.1〜2.2%
と小さく、比抵抗が20℃において2.a x toi
2〜1.5 XIQ13Ω・ぼと高く、しかも125℃
においても1.I XIO”〜4.I XIO”Ω・儂
という高い値を示し、さらに抗折強度も1010〜14
50 kg/cdと実用上十分高い値を示す信頼性の高
い実用性の極めて高い磁器組成であることがわかる。こ
のように優れた特性を示す本発明の磁器は焼結温度が1
050℃以下の低温であるため、積層コンデンサの内部
電極の低価格化を実現できると共に、省エネルギーや炉
材の節約にもなるという極めて優れた効果も生じる。図
は本発明の主成分組成範囲を示す。図に示した番号は、
表に示した主成分配合比の番号に対応させである。
As is clear from the results shown in the table, Pb (]VIg
sy□W17□)Os P b T 10s Pb (
Nl 1/3Nb, /3)Os A 3-component composition in which pb (Mn 1/, Ta l/1)03 is added as a subcomponent at a specific ratio has a dielectric constant of 31.
00-13530, high dielectric loss of 0.1-2.2%
The resistivity is as small as 2.0 at 20°C. a x toi
2~1.5 XIQ13Ω・Very high, and 125℃
Also in 1. It shows a high value of I XIO" to 4. I
It can be seen that the porcelain composition has a highly reliable and extremely practical value showing a value of 50 kg/cd, which is sufficiently high for practical use. The porcelain of the present invention exhibiting such excellent properties has a sintering temperature of 1
Since the temperature is 0.050° C. or lower, it is possible to reduce the cost of the internal electrodes of multilayer capacitors, and also has the extremely excellent effect of saving energy and furnace materials. The figure shows the main component composition range of the present invention. The numbers shown in the diagram are
The numbers correspond to the main component blending ratios shown in the table.

本発明は、主成分組成物を(pb(Mg、、□W1/ρ
on)工(PbTiOs)アI:pb (Ni 173
Nb 273)Os :)2と表わしたときに(ただし
、x十Y+z=1.oO)、その組成は3成分組成図に
おける点 (x=0.693 、 y=0.297 、 z=(1
,01)(x=0.495 、3’=0.495 、 
z=0.01 )(x=0.195 、 y=0.45
5 、 z=0.35 )(x=0.10 、 y=o
、4o 、 z=0.50 )(x=0.06 、 y
=0.24 、 z=0.70)を結ぶ線上、およびこ
の5点に囲まれる組成範囲に限定され、副成分の添加含
有量は主成分に対して0.05〜6mo1%に限定され
る。主成分組成範囲を表わす3成分組成図において、組
成点2,6および組成点17.19を結ぶ線の外側では
、高温における比抵抗が小さくなり、実用的でない。組
成点6゜13 、17を結ぶ腺の外側では、キュリ一点
が実用範囲より高温側に大きくずれるため、誘電率が小
さくなり、組成点19,2を結ぶ線の外側では、キュリ
一点が実用範囲より低温側に大きくずれるため、誘電率
が小さくなり、実用的ではない。
In the present invention, the main component composition (pb(Mg, □W1/ρ
on) Engineering (PbTiOs) A I: pb (Ni 173
When expressed as Nb 273) Os :) 2 (where x + Y + z = 1.oO), its composition is the point (x = 0.693, y = 0.297, z = (1
, 01) (x=0.495, 3'=0.495,
z=0.01) (x=0.195, y=0.45
5, z=0.35) (x=0.10, y=o
, 4o, z=0.50) (x=0.06, y
= 0.24, z = 0.70) and the composition range surrounded by these five points, and the added content of subcomponents is limited to 0.05 to 6 mo1% of the main component. . In the three-component composition diagram showing the main component composition range, the resistivity at high temperatures becomes small outside the line connecting composition points 2 and 6 and composition point 17.19, making it impractical. Outside the gland connecting composition points 6゜13 and 17, the single Curie point deviates significantly to the higher temperature side than the practical range, so the dielectric constant becomes small, and outside the line connecting composition points 19 and 2, the single Curie point falls outside the practical range. Since the temperature deviates significantly toward the lower temperature side, the dielectric constant decreases, making it impractical.

また副成分である、Pb (Mn 172’l’a 1
.)Onの添加量がQ、05 moノチ未満では抗折強
度の改善効果が小さく、6 molチを超えると逆に抗
折強度が小さくなるため実用的ではない。
In addition, Pb (Mn 172'l'a 1
.. ) If the amount of On added is less than Q, 05 mo, the effect of improving the transverse strength is small, and if it exceeds 6 mo, the transverse strength decreases, which is not practical.

【図面の簡単な説明】[Brief explanation of the drawing]

図は、本発明の主成分組成範囲と実施例に示した組成点
を示す図である。 特許出願人 日本電気株式会社 Pb(NL1/3Nb2/3)03
The figure is a diagram showing the main component composition range of the present invention and the composition points shown in Examples. Patent applicant: NEC Corporation Pb (NL1/3Nb2/3) 03

Claims (1)

【特許請求の範囲】[Claims] (1)マグネシラノ、ψタング:1. テア rll 
@”l [Pb (Mg 、/2 )W、/□)03〕
、チタン酸鉛CPbTi03)およびニッケル・ニオブ
酸鉛(pb (Nl l/3Nb 2/3)Os 〕か
らなる3成3成成物を(pb(へ句、/2W1/□)0
.)、CPbTi03)、CPb(Ni、。 Nb273)03〕2と表わしたときに、(ただし、X
 + y+z=1.00)この3成分組成図に訃いて、
以下の組成点 (x=0.693 、y=0.297 、z=0.01
 )(x=(1,495+ y:0.495 、z=0
.01 )(x””0.195 、 3’=0.455
 、z =0.35 )(x=0.10 、y=o、4
o 、z=0.50 )(x=0.06 、y=0.2
4 、z=0.70 )を結ぶ線上、およびこの5点に
囲まれる組成範囲にある主成分組成物に副成分としてマ
ンガン・タンタル酸鉛[Pb (Mn I/2Ta 1
72)Os )を主成分に対して0.05〜6mo4チ
添加含有せしめてなることを特徴とする磁器組成物。
(1) Magnesilano, ψ tongue: 1. thea rll
@”l [Pb (Mg, /2)W, /□)03]
, lead titanate CPbTi03) and nickel-lead niobate (pb (Nl l/3Nb 2/3)Os)].
.. ), CPbTi03), CPb(Ni,.Nb273)03]2, (where X
+ y + z = 1.00) Based on this three-component composition diagram,
The following composition points (x=0.693, y=0.297, z=0.01
)(x=(1,495+y:0.495,z=0
.. 01)(x””0.195, 3'=0.455
, z = 0.35 ) (x = 0.10 , y = o, 4
o, z=0.50) (x=0.06, y=0.2
4, z=0.70) and in the composition range surrounded by these five points, manganese-lead tantalate [Pb (Mn I/2Ta 1
72) A porcelain composition comprising 0.05 to 6 mo4 of Os) added to the main component.
JP58152725A 1983-08-22 1983-08-22 Ceramic composition Pending JPS6046966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58152725A JPS6046966A (en) 1983-08-22 1983-08-22 Ceramic composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58152725A JPS6046966A (en) 1983-08-22 1983-08-22 Ceramic composition

Publications (1)

Publication Number Publication Date
JPS6046966A true JPS6046966A (en) 1985-03-14

Family

ID=15546785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58152725A Pending JPS6046966A (en) 1983-08-22 1983-08-22 Ceramic composition

Country Status (1)

Country Link
JP (1) JPS6046966A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661462A (en) * 1984-06-13 1987-04-28 Murata Manufacturing Co., Ltd. Dielectric ceramic composition
US4711862A (en) * 1984-12-27 1987-12-08 Matsushita Electric Industrial Co., Ltd. Dielectric ceramic compositions

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58176176A (en) * 1982-04-08 1983-10-15 日本電気株式会社 Ceramic composition

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58176176A (en) * 1982-04-08 1983-10-15 日本電気株式会社 Ceramic composition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661462A (en) * 1984-06-13 1987-04-28 Murata Manufacturing Co., Ltd. Dielectric ceramic composition
US4711862A (en) * 1984-12-27 1987-12-08 Matsushita Electric Industrial Co., Ltd. Dielectric ceramic compositions

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