JPS6046373A - Vapor deposition material gasifying apparatus - Google Patents

Vapor deposition material gasifying apparatus

Info

Publication number
JPS6046373A
JPS6046373A JP15352483A JP15352483A JPS6046373A JP S6046373 A JPS6046373 A JP S6046373A JP 15352483 A JP15352483 A JP 15352483A JP 15352483 A JP15352483 A JP 15352483A JP S6046373 A JPS6046373 A JP S6046373A
Authority
JP
Japan
Prior art keywords
gas
pressure
evaporated
vapor
vapor deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15352483A
Other languages
Japanese (ja)
Inventor
Kotaro Takahashi
幸太郎 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
YANAKO KEISOKU KK
Original Assignee
YANAKO KEISOKU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by YANAKO KEISOKU KK filed Critical YANAKO KEISOKU KK
Priority to JP15352483A priority Critical patent/JPS6046373A/en
Publication of JPS6046373A publication Critical patent/JPS6046373A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation

Abstract

PURPOSE:To generate vapor deposition gas always having constant pressure and concn., by evaporating vapor diposition substance under heating in a hermetically closed container, and controlling a heater and the flow control valve of diluting gas on the basis of the pressure measured value of the evaporated substance. CONSTITUTION:A vapor deposition material W is put in a hermetically closed container 1 which is, in turn, evacuated by a vacuum pump 15 to form a vacuum atmosphere. The vapor depostion material W is heated by the ring shaped heater 5 provided to the outside of the container 1 and evaporated. Gas pressure increases as the amount of evaporated gas increases and the evaporated gas is supplied to a vapor deposition reactor from an outlet 6 through a discharge pipe 8 having a capillary 7. In this case, the pressure of the evaporated gas is measured by a gas pressure detector 11 and the heater 5 and the flow control valve 18 of diluting gas are controlled on the basis of the measured result to send vapor having constant pressure and concn. to a vapor depostion furnace while controlling the evaporation amount and the flow amount the diluting gas.

Description

【発明の詳細な説明】 この発明は蒸着材料ガス化装置に関する。[Detailed description of the invention] The present invention relates to a deposition material gasification device.

半導体素子を気相成長法等により製造する際においては
、その品質管理のため安定した濃度の蒸着材料の蒸発ガ
ス(なお、この明細書において蒸発とは昇華も含むもの
である。)を得ることが必要である。また、半導体素子
の製造方法のat究や開発を行なう際においても、反応
炉の蒸発ガス濃度測定器の感度設定を行なうため、標準
ガスとして濃度の安定した蒸発ガスを得ることが必要で
ある。
When manufacturing semiconductor devices by a vapor phase growth method, etc., it is necessary to obtain a stable concentration of evaporation gas (in this specification, evaporation includes sublimation) of the evaporation material for quality control. It is. Furthermore, when conducting research and development of semiconductor device manufacturing methods, it is necessary to obtain evaporated gas with a stable concentration as a standard gas in order to set the sensitivity of the evaporated gas concentration measuring device in the reactor.

この発明は、上記の目的を達成するためになされt二も
のである。以下にこの発明を図面に示す実施例に基づい
て説明する。
This invention has been made to achieve the above objects. The present invention will be explained below based on embodiments shown in the drawings.

温度により蒸発圧力が一義的に定まる公知の蒸着材料W
を入れる密閉容器(υは一対の左右半休(2)。
Known evaporation material W whose evaporation pressure is uniquely determined by temperature
(υ is a pair of left and right halves (2).

!3)よりなり、両者はボルト・ナツト14)等の公知
の連結手段により結合・分離1在となされている。
! 3), and both are connected and separated by known connecting means such as bolts and nuts 14).

左半休(2)には環状の加熱器(5)が設けられている
An annular heater (5) is provided in the left half (2).

右手体(3,には出口(6)が形成され、この出口(6
(にキャピラリー(7ンを有する導出管(8)が接続さ
れている。
An exit (6) is formed in the right hand body (3,
An outlet tube (8) having a capillary (7) is connected to (.

まtコ、右半休(3)の上部には透孔(す)が形成され
、この透孔(9)には、可撓性陥膜00が張設されると
共に、圧力検出器[+])が接続管(2)を介して接続
されている。
A through hole (su) is formed in the upper part of the right half (3), and a flexible fall membrane 00 is stretched in this through hole (9), and a pressure detector [+] ) are connected via a connecting pipe (2).

このような構成により、密閉谷23 +11内の蒸発ガ
スを逃すことなく、密閉容器(1)内の圧力を+J撓性
隔11zuQを介して圧力検出器a時に伝えることが出
来る。
With such a configuration, the pressure inside the closed container (1) can be transmitted to the pressure detector a via the +J flexible gap 11zuQ without escaping the evaporative gas inside the closed valley 23+11.

密閉容器(1)の右半休(3)の下部にも透孔(Ifが
あけられ、この透孔03に接続管0(を介して真空ポン
プ(15)が接続されている。
A through hole (If) is also drilled in the lower part of the right half (3) of the closed container (1), and a vacuum pump (15) is connected to this through hole 03 via the connecting pipe 0.

前記導出管(8)の、キャピラリー(7)より下流側に
、希釈用ガス輸送管onが接続され、この輸送管Q時の
端には希釈用ガスボンベQ7)が接続されると共に、そ
の途中には流量制御弁α橢が介在されている。この流量
制御弁(へ)及び加熱器(5)は、圧力検出器(lυか
らの圧力変化に対応した信号により自動制御されるよう
になされている。換言すれば、密閉容器(1)の圧力が
設定値を外れると、設定圧力になるように加熱器;5)
の温度を変更し、蒸発ガスが一定濃度となるように希釈
用ガスの流量を変更するようになされている。なお、こ
のような自動制御機(1°I■は必ずしも必要なもので
はない。
A dilution gas transport pipe on is connected to the outlet pipe (8) on the downstream side of the capillary (7), and a dilution gas cylinder Q7) is connected to the end of this transport pipe Q, and in the middle of the A flow control valve α is interposed. The flow rate control valve (to) and the heater (5) are automatically controlled by a signal corresponding to a pressure change from a pressure detector (lυ).In other words, the pressure in the closed container (1) If the pressure is out of the set value, the heater will adjust to the set pressure; 5)
The temperature of the diluting gas is changed, and the flow rate of the diluent gas is changed so that the concentration of evaporated gas is constant. Note that such an automatic controller (1°I■) is not necessarily necessary.

次に上記装置の使用方法について説明する。Next, how to use the above device will be explained.

まず、この装置を蒸着装置の一部として使用するときは
、導出管(8)に蒸着対象物を収めた反応炉を接続し、
他方標準ガス発生装置として使用するときは、導出管(
8)に感度を設定するべき蒸発ガス濃度測定器を接続す
る。
First, when using this device as a part of a vapor deposition device, connect the reactor containing the vapor deposition target to the outlet pipe (8),
On the other hand, when using it as a standard gas generator, the outlet pipe (
8) Connect the evaporative gas concentration measuring device whose sensitivity should be set.

このような準備の後、密閉容器(1)内に、蒸着材料(
例えば五塩化モリブデン)を入れて、密閉容器(])内
を真空ポンプclrjにより真空とした後、本装置の主
スィッチを入れれば、加熱器(5)により密閉容器(1
)が加熱され蒸着材料の蒸発が開始され、蒸発ガスは、
密閉容器(1)内の圧力を自ら高めるため、その上昇し
た一定の圧力により、即ち加熱温度に応じて定まる一定
の圧力により、密閉容器(υ内を出て導出管(8)内に
至る。導出管(8)内の蒸発ガスは流量制御弁Q樽によ
り蒸発ガスの圧力に応じた流量に制御された希釈用ガス
により希釈され、一定濃度の蒸発ガスとなって反応炉又
は蒸発ガス濃度測定器内に入り込むことになる。
After such preparation, the vapor deposition material (
For example, put molybdenum pentachloride) in the sealed container () and make it evacuated using the vacuum pump clrj, and then turn on the main switch of this device.
) is heated and the evaporation of the deposition material starts, and the evaporated gas is
Since the pressure inside the closed container (1) is increased by itself, the increased constant pressure, that is, the constant pressure determined depending on the heating temperature, leaves the closed container (υ) and reaches the outlet pipe (8). The evaporated gas in the outlet pipe (8) is diluted with diluent gas whose flow rate is controlled by the flow rate control valve Q barrel according to the pressure of the evaporated gas, and becomes evaporated gas with a constant concentration, which can be used in the reactor or for measurement of evaporated gas concentration. It will get inside the vessel.

なお、必要に応じて導出管(8)等を保温又は加熱する
ことが望ましい。
Note that it is desirable to keep the outlet pipe (8) and the like warm or heated as necessary.

以上の次第でこの発明によれば、密閉容器(1)を真空
にして加熱し、蒸発ガスの自己圧力により蒸発ガスを流
出させるものであるから、加熱器(5)の温度を制御す
ることにより、蒸発ガスの流出量を一定に保つことが出
来、且つ6釈用ガスの流11Yも流量制御弁O榎により
制御し一定に保つことが出来るの、で、究極的に希釈さ
れた蒸発ガスを一定濃度にすることが出来る。従って蒸
着装置の蒸発ガス発生装置や標準ガス発生装置として有
効に利用し得るものである。
As described above, according to the present invention, since the closed container (1) is evacuated and heated, and the evaporated gas is caused to flow out by the self-pressure of the evaporated gas, by controlling the temperature of the heater (5). , the outflow amount of evaporated gas can be kept constant, and the flow 11Y of the 6-distillation gas can also be controlled and kept constant by the flow rate control valve O, so that the ultimately diluted evaporated gas can be kept constant. It is possible to maintain a constant concentration. Therefore, it can be effectively used as an evaporative gas generator of a vapor deposition apparatus or a standard gas generator.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の実施例を示す系統図である。 !j)・密閉容器、(5)・・・加熱器、(6)・−・
出口、+gj−・導出管、OS・・・真空ポンプ、C7
1・・・希釈用ガスボンベ、08・・流量制御弁、W・
・・蒸着材料特許出願人 株式会社 ヤナコ計測 代理人弁理士大西哲夫 第1図
FIG. 1 is a system diagram showing an embodiment of the present invention. ! j)・Airtight container, (5)・・・heater, (6)・−・
Outlet, +gj-/outlet pipe, OS...vacuum pump, C7
1... Dilution gas cylinder, 08... Flow rate control valve, W.
...Vapour-deposition material patent applicant Yanako Keizoku Co., Ltd. Patent attorney Tetsuo Onishi Figure 1

Claims (1)

【特許請求の範囲】[Claims] 蒸着材料(W)を入れる密閉容器11)と、この密閉容
器(])を加熱する加熱器(5)と、前記密閉容器(旧
こ接続された真空ポンプ0!9と、密閉容器(1)の出
口(6)に接続された導出管(8)と、この導出管(8
)に接続された希釈用ガスボンベQ7)と、この8釈用
ガスの流量を調節する流量制御弁側とを有する蒸着材料
ガス化装置。
An airtight container 11) containing the vapor deposition material (W), a heater (5) for heating this airtight container (]), a vacuum pump 0!9 connected to the airtight container (formerly), and an airtight container (1) an outlet pipe (8) connected to an outlet (6) of the outlet pipe (8);
) and a flow rate control valve side for adjusting the flow rate of the dilution gas Q7).
JP15352483A 1983-08-22 1983-08-22 Vapor deposition material gasifying apparatus Pending JPS6046373A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15352483A JPS6046373A (en) 1983-08-22 1983-08-22 Vapor deposition material gasifying apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15352483A JPS6046373A (en) 1983-08-22 1983-08-22 Vapor deposition material gasifying apparatus

Publications (1)

Publication Number Publication Date
JPS6046373A true JPS6046373A (en) 1985-03-13

Family

ID=15564409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15352483A Pending JPS6046373A (en) 1983-08-22 1983-08-22 Vapor deposition material gasifying apparatus

Country Status (1)

Country Link
JP (1) JPS6046373A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987001614A1 (en) * 1985-09-16 1987-03-26 J.C. Schumacher Company Vacuum vapor transport control
JPS63256833A (en) * 1987-03-31 1988-10-24 ライボルト・アクチエンゲゼルシヤフト Method and device for inspecting leakage of system filled with steam or liquid or both steam and liquid
EP1967610A1 (en) * 2007-03-08 2008-09-10 Schott AG Handling device for precursor
WO2010106410A1 (en) * 2009-03-16 2010-09-23 Applied Materials, Inc. Evaporator, coating installation, and method for use thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53120686A (en) * 1977-03-31 1978-10-21 Hitachi Ltd Forming method for thin film by gas phase reaction

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53120686A (en) * 1977-03-31 1978-10-21 Hitachi Ltd Forming method for thin film by gas phase reaction

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987001614A1 (en) * 1985-09-16 1987-03-26 J.C. Schumacher Company Vacuum vapor transport control
JPS63256833A (en) * 1987-03-31 1988-10-24 ライボルト・アクチエンゲゼルシヤフト Method and device for inspecting leakage of system filled with steam or liquid or both steam and liquid
EP1967610A1 (en) * 2007-03-08 2008-09-10 Schott AG Handling device for precursor
WO2010106410A1 (en) * 2009-03-16 2010-09-23 Applied Materials, Inc. Evaporator, coating installation, and method for use thereof

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