JPS63238281A - Wafer treating device and micromanometer used therefor - Google Patents
Wafer treating device and micromanometer used thereforInfo
- Publication number
- JPS63238281A JPS63238281A JP7143487A JP7143487A JPS63238281A JP S63238281 A JPS63238281 A JP S63238281A JP 7143487 A JP7143487 A JP 7143487A JP 7143487 A JP7143487 A JP 7143487A JP S63238281 A JPS63238281 A JP S63238281A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- reaction chamber
- micro
- micromanometer
- exhaust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 50
- 230000011664 signaling Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 7
- 239000000376 reactant Substances 0.000 abstract 1
- 230000002463 transducing effect Effects 0.000 abstract 1
- 238000001514 detection method Methods 0.000 description 23
- 239000007789 gas Substances 0.000 description 21
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ウェハー処理装置に関し特に、化学的蒸着膜
を形成する装置（ＣＶＤ装置）に適用して、有効な技術
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a wafer processing apparatus, and particularly relates to a technique that is effective when applied to an apparatus for forming a chemical vapor deposition film (CVD apparatus).
反応処理室内の圧力を常圧（大気圧）に保った下での気
相反応による薄膜形成（以下、常圧Ｃ■Ｄと言う）を行
う装置（常圧ＣＶＤ装置）では、実際は、反応処理室内
の圧力を大気圧よシやや低い圧力にして、毒性の高い反
応ガスを外部に漏らさないようＫしている。この時の反
応処理室内の圧力は、例えば、大気圧よシ約２０Ｘ１０
″” （ｋｇ／ｃｆｆｌ ）低い圧力になっている。In a device (normal pressure CVD device) that performs thin film formation by gas phase reaction (hereinafter referred to as normal pressure CD) while maintaining the pressure inside the reaction processing chamber at normal pressure (atmospheric pressure), the reaction processing The pressure inside the chamber is set to slightly lower than atmospheric pressure to prevent highly toxic reaction gases from leaking outside. At this time, the pressure inside the reaction processing chamber is, for example, about 20×10 lower than atmospheric pressure.
``'' (kg/cffl) low pressure.
前記常圧ＣＶＤ装置を第５図によシ説明する。The atmospheric pressure CVD apparatus will be explained with reference to FIG.
常圧ＣＶＤ装置の反応部は、反応処理室１と。The reaction section of the normal pressure CVD apparatus is a reaction processing chamber 1.
排気管２と、反応処理室内の圧力を調整するための排気
圧調整ダンパ３と、排気７アン４と、ダイアフラムを利
用した微圧測定器５から構成されている。It is composed of an exhaust pipe 2, an exhaust pressure adjustment damper 3 for adjusting the pressure inside the reaction processing chamber, an exhaust 7an 4, and a micro-pressure measuring device 5 using a diaphragm.
前記微圧測定器５を第６図によシ説明する。The micro-pressure measuring device 5 will be explained with reference to FIG.
圧力検出ボート７を前記排気管２に接続し、圧力検出ボ
ート６を他に接続することなく開放状態とし大気圧の状
態にする。この時、前記排気管２内の圧力と前記反応処
理室１内の圧力は、等しいとみなすことができる。前記
圧力検出ボート７および６に連通したそれぞれの空間９
および８の間には、雨空間を隔離する弾性薄膜１０があ
る。大気圧よシ反応処理室１内の圧力が低い場合、前記
弾性薄膜１０は常時下方に引っばっている復元バネ１１
に対抗して、上方に変位する。この変位量がレバー１２
に伝わり、さらに固定点１４を支点とした拡大リンクレ
バー１３に伝わシ、ワイヤー１５によって滑車１６およ
び１７を回す。The pressure detection boat 7 is connected to the exhaust pipe 2, and the pressure detection boat 6 is brought into an open state without being connected to anything else and brought to atmospheric pressure. At this time, the pressure inside the exhaust pipe 2 and the pressure inside the reaction processing chamber 1 can be considered to be equal. Respective spaces 9 communicating with the pressure detection boats 7 and 6
and 8 there is an elastic membrane 10 which isolates the rain space. When the pressure inside the reaction processing chamber 1 is lower than atmospheric pressure, the elastic thin film 10 is always pulled downward by a restoring spring 11.
Displaces upward in opposition to. This amount of displacement is the lever 12
It is further transmitted to the enlarged link lever 13 with the fixed point 14 as a fulcrum, and the wire 15 turns the pulleys 16 and 17.
前記滑車１７の軸には、圧力指示針１８が付いておシ、
前記反応処理室１内の圧力を知ることができる。A pressure indicator needle 18 is attached to the shaft of the pulley 17.
The pressure inside the reaction processing chamber 1 can be known.
上記したような、常圧ＣＶＤ装置および微圧測定器は、
特公昭６０−２３３８２７号公報および、特許第８２３
９７１号にそれぞれ記載されている。The normal pressure CVD equipment and low pressure measuring device as described above are
Japanese Patent Publication No. 60-233827 and Patent No. 823
971, respectively.
本発明者は、常圧ＣＶＤ装置の信頼性の向上について検
討した結果、次の点を見出した。The inventor of the present invention has found the following points as a result of studies on improving the reliability of normal pressure CVD apparatuses.
反応処理室内の微小圧力（Ｉ Ｘ １０−４ ｋｇ／ｃ
ｒＡ程度）の変動が、形成されるＣＶＤ膜の品質及び膜
厚のバラツキ、不良力どの原因となるため、前記微小圧
力を精度よく検出シ７、ただちに、前記反応処理室内の
圧力を１４！！！、することが必要である。Micro pressure inside the reaction treatment chamber (I x 10-4 kg/c
Fluctuations in the temperature (on the order of rA) can cause variations in the quality and thickness of the CVD film formed, as well as defective forces. ! ! ,It is necessary to.
しかし、従来の常圧ＣＶＤ装置における前記微圧測定器
５、排気圧ｖ４整ダンパ３および排気ファン４は、それ
ぞれ独立しておシ、自動的に制御されていない。However, the micro-pressure measuring device 5, exhaust pressure v4 regulating damper 3, and exhaust fan 4 in the conventional normal pressure CVD apparatus are each independently controlled and not automatically controlled.
また、従来の前記微圧測定器では、前記弾性薄膜１０お
よび復元バネ１１を変形するだけの力を要するため、微
圧の検出感度、精度が悪い。Further, the conventional micro-pressure measuring device requires a force sufficient to deform the elastic thin film 10 and the restoring spring 11, and thus has poor micro-pressure detection sensitivity and accuracy.
本発明の目的は、常圧ＣＶＤ装置の信頼性を向上するこ
とにある。An object of the present invention is to improve the reliability of an atmospheric pressure CVD apparatus.
本発明の他の目的は、微小な圧力差を検出することが可
能な技術を提供することにある。Another object of the present invention is to provide a technique capable of detecting minute pressure differences.
本発明の他の目的は、常圧ＣＶＤ装置において、反応処
理室内の圧力を、自動的に制御することが可能な技術を
提供することにある。Another object of the present invention is to provide a technique that can automatically control the pressure inside a reaction processing chamber in an atmospheric pressure CVD apparatus.
本発明の他の目的は、反応処理室内の圧力を、電気信号
によ多制御することが可能な技術を提供することにある
。Another object of the present invention is to provide a technique that allows the pressure within a reaction processing chamber to be controlled by electrical signals.
本発明の前記ならびにその他の新規な特徴は、本明細書
の記述及び添付図面によって明らかになるであろう。The above and other novel features of the present invention will become apparent from the description herein and the accompanying drawings.
本願によって開示される発明のうち、代表的なものの概
要を簡単に説明すれば、下記のとおシである。A brief overview of typical inventions disclosed in this application is as follows.
すなわち、２つの空間の間の微小な圧力差に相応するガ
スの流れを電気信号に変換し、その電気信号によシ排気
系（排気圧調整ダンパ、排気ファン）を制御する。That is, the gas flow corresponding to the minute pressure difference between the two spaces is converted into an electric signal, and the exhaust system (exhaust pressure adjustment damper, exhaust fan) is controlled by the electric signal.
上記した手段によれは、反応処理室内の圧力の変化（増
大または減少）は、電気信号にょシ自動的に制御される
ので、常圧ＣＶＤ装置の信頼性を向上することができる
。According to the above-mentioned means, the change (increase or decrease) in the pressure inside the reaction processing chamber is automatically controlled by an electric signal, so that the reliability of the atmospheric pressure CVD apparatus can be improved.
以下、本発明の構成について、実施例とともに説明する
。Hereinafter, the configuration of the present invention will be explained along with examples.
なお、実施例の全図において、同一機能を有するものは
同−付号を付け、その〈シ返しの説明は省略する。In all the figures of the embodiment, parts having the same function are given the same reference numeral, and the explanation of the ``return'' will be omitted.
本発明の実施例である常圧ＣＶＤ装置の簡略断面図を第
１図に示す。FIG. 1 shows a simplified cross-sectional view of an atmospheric pressure CVD apparatus that is an embodiment of the present invention.
第１図のように、この実施例の常圧ＣＶＤ装置は、反応
処理室１９と、排気系３８と、微圧測定器３３Ａと、制
御部２８及び３７Ａとがら、構成される。As shown in FIG. 1, the normal pressure CVD apparatus of this embodiment includes a reaction processing chamber 19, an exhaust system 38, a micropressure measuring device 33A, and control sections 28 and 37A.
前記反応処理室１９内は、支持軸２０．サセプタ２１、
バッファ部材２３、およびヒータ２４からなる。試料台
２１Ａの上罠載置されたウェハー２２は、図示しない駆
動モーターによシ、支持軸２０（サセプタ２１）及び試
料台２１Ａが夫々回転させられることにょシ自公転する
。反応処理室１９内へは、その上部から反応ガス（及び
キャリアガス）２６Ａが供給される。反応ガス２６Ａは
バッファ部材２３に沿ってウェハー２２上に供給され、
ヒータ２４によって加熱されて反応し、ウェハー２２上
に薄膜を形成する・ウーハ−２２は・例えば、シリコン
半導体基板（シリコンウェハー）からなシ、その上にト
ランジスタ等からなる集積回路が複数形成される。反応
処理室１９内では、例えば集積回路装置において絶縁膜
として使用されるＰＳＧ（フォス７オシリケートガラス
）膜等が、ＳｉＨ４ガスとＯ，ガス及びＰＨ，ガスを含
むガス２６Ａの化学反応によってウェハー２２上に形成
される。Inside the reaction processing chamber 19, a support shaft 20. Susceptor 21,
It consists of a buffer member 23 and a heater 24. The wafer 22 placed on the upper trap of the sample stage 21A rotates around itself as the support shaft 20 (susceptor 21) and the sample stage 21A are rotated by a drive motor (not shown). A reaction gas (and carrier gas) 26A is supplied into the reaction processing chamber 19 from the upper part thereof. The reaction gas 26A is supplied onto the wafer 22 along the buffer member 23,
The woofer 22 is heated by the heater 24 and reacts to form a thin film on the wafer 22.The woofer 22 is, for example, made of a silicon semiconductor substrate (silicon wafer), on which a plurality of integrated circuits such as transistors are formed. . In the reaction processing chamber 19, for example, a PSG (phos-7 ossilicate glass) film used as an insulating film in integrated circuit devices is heated to the wafer 22 by a chemical reaction between SiH4 gas, O, gas and PH, and a gas 26A containing the gas. formed on top.
前記排気系３８には、排気圧調整ダンパ２７および排気
ファン２５が設置され、前記排気圧調整ダンパ２７は、
制御部を構成する駆動用モーター２８によって、開閉が
可能になっている。前記排気７アン２５の回転数と、前
記排気圧調整ダンパ２７の開閉度を調整することによシ
、排気口がら反応系の外へ排気されるガス２６Ｂの量を
調整し、前記反応処理室１９の中の圧力を大気圧（ｌａ
ｔｍ＝１ｋｇ／ｃ品）よシ、１〜２０ Ｘ １０−’
（ｋｇ／ｃｒＡ ）低い圧力に調整し７ている。An exhaust pressure adjustment damper 27 and an exhaust fan 25 are installed in the exhaust system 38, and the exhaust pressure adjustment damper 27 is
Opening and closing is possible by a drive motor 28 that constitutes a control section. The amount of gas 26B exhausted from the reaction system through the exhaust port is adjusted by adjusting the rotational speed of the exhaust 7-an 25 and the opening/closing degree of the exhaust pressure adjusting damper 27. The pressure in 19 is atmospheric pressure (la
tm=1kg/c product) 1~20 x 10-'
(kg/crA) The pressure is adjusted to a low level.
前記微圧測定器３３Ａの圧力検出ボート３４Ａは、前記
排気系３８に接続されておシ、他の一方の圧力検出ボー
）３５Ａは流量ａ１１ｓパルプ３６に接続される。前記
圧力検出ボート３４Ａ内の圧力は、前記反応処理室」９
内の圧力と等しい。また、前記圧力検出ボート３５Ａ内
は前記流：ｌｖ！４整パルプ３６を開放した状態で、大
気状態（大気圧）になっている。したがって、前記反応
処理室１９内の圧力が大気圧より低い状態になっている
ため、前記圧力検出ボー）３５Ａから前記圧力検出ボー
ト３４Ａの方向にカス（大気３０）が流れる。前記大気
の流れる度合（流ｉ）にょシ前記反応処理室１９内の圧
力を知ることができる。The pressure detection boat 34A of the micro pressure measuring device 33A is connected to the exhaust system 38, and the other pressure detection boat 35A is connected to the flow rate a11s pulp 36. The pressure inside the pressure detection boat 34A is determined by the pressure inside the reaction processing chamber 9.
equal to the pressure within. Moreover, the flow inside the pressure detection boat 35A is: lv! When the four-sized pulp 36 is opened, it is in an atmospheric state (atmospheric pressure). Therefore, since the pressure inside the reaction processing chamber 19 is lower than the atmospheric pressure, the waste (atmosphere 30) flows from the pressure detection boat 35A toward the pressure detection boat 34A. The pressure inside the reaction processing chamber 19 can be determined by the flow rate (flow i) of the air.
上記の原理を利用して、前記反応処理室１９内の圧力が
変化（増加または減少）した場合、前記圧力の変化は、
前記流量の減化（増加または減少）Ｋ相応する。この流
量の変化を前記微圧測定器３３Ａによシ、電気信号に変
換し、制御部ｆ：構成する制御装置３７Ａに送る。前記
制御装置３７Ａは、前記電気信号を認識し、前記駆動用
モーター２８および排気７アン２５を制御し、前記排気
圧調整ダンパ２７の開閉度、および前記排気ファンの回
転数を変化させることによシ、前記反応処理室１９内の
自動圧力調整を可能にする。さらに、図示しないが、制
御装置３７Ａは、大気圧と、前記圧力検出ボート３４Ａ
と間の圧力差が大きい場合には、前記微圧測定器３３Ａ
を通過するカス（大気）流量が大きくなるため、前記流
量論整バルブ３６で流れるガス流量をしほって使用する
。Using the above principle, when the pressure inside the reaction processing chamber 19 changes (increases or decreases), the change in pressure is as follows:
The decrease (increase or decrease) of the flow rate K corresponds. This change in flow rate is converted into an electrical signal by the micro-pressure measuring device 33A, and sent to the control device 37A that constitutes the control section f. The control device 37A recognizes the electric signal, controls the drive motor 28 and the exhaust fan 25, and changes the opening/closing degree of the exhaust pressure adjusting damper 27 and the rotation speed of the exhaust fan. (b) Automatic pressure adjustment within the reaction processing chamber 19 is enabled. Furthermore, although not shown, the control device 37A detects atmospheric pressure and the pressure detection boat 34A.
If the pressure difference between
Since the flow rate of gas (atmosphere) passing through becomes large, the flow rate of the flowing gas is reduced by the flow rate adjustment valve 36.
また、この実施例では、前記微圧測定器３３Ａと同一機
能をもつ微圧測定器３３Ｂを、反応処理室１９内の圧力
調整の他に、排気系３８のフィルター２９の目づまシの
検出に用いている。すなわち、微圧測定器３３Ｂの圧力
検出ボート３５Ｂをフィルター２９の上流に、圧力検出
ボート３４Ｂをフィルター２９の下流に、それぞれ接続
する。In addition, in this embodiment, a micro-pressure measuring device 33B having the same function as the micro-pressure measuring device 33A is used not only to adjust the pressure inside the reaction processing chamber 19 but also to detect clogging of the filter 29 of the exhaust system 38. I am using it. That is, the pressure detection boat 35B of the micropressure measuring device 33B is connected upstream of the filter 29, and the pressure detection boat 34B is connected downstream of the filter 29, respectively.
前記フィルター２９は、前記反応処理室で発生した粉塵
状の反応生成物を除去するためのものである。前記フィ
ルター２９が粉塵で目づまシする前は、前記フィルター
の上下流間の圧力差は少ない。The filter 29 is for removing dust-like reaction products generated in the reaction processing chamber. Before the filter 29 is clogged with dust, the pressure difference between upstream and downstream of the filter is small.
つマシ、前記圧力検出ボート３５Ｂから３４Ｂへと流れ
るガス量は少ない。しかし、前記フィルター２９が粉塵
でつまると、前記フィルター２９の上下流間の圧力差は
大きくなり、前記圧力検出ポー）３５Ｂと３４Ｂ間を流
れるガス量は多くなる。Unfortunately, the amount of gas flowing from the pressure detection boat 35B to 34B is small. However, if the filter 29 is clogged with dust, the pressure difference between the upstream and downstream sides of the filter 29 will increase, and the amount of gas flowing between the pressure detection ports 35B and 34B will increase.
上記したことから、前記圧力検出ボート３５Ｂと３４Ｂ
間を流れるガス量を前記微圧測定器３３Ｂによシ測定し
、所定の流量（フィルター２９の目づまシ状態）になっ
たら、制御装置３７Ｂにょシ、警報を鳴らす等して、前
記フィルター２９の目づまシを自動監視することができ
る。From the above, the pressure detection boats 35B and 34B
The micro-pressure measuring device 33B measures the amount of gas flowing between the filters 29 and 33B, and when the flow rate reaches a predetermined value (the filter 29 is clogged), the control device 37B sounds an alarm, etc. It is possible to automatically monitor blind spots.
次に、本発明の実施例に使用した、微圧測定器３３Ａ（
３３Ｂ）を第２図および第３図にょシ説明する。Next, the micro-pressure measuring device 33A (
33B) will be explained with reference to FIGS. 2 and 3.
第２図のように、圧力検出ボート３５Ａと３４Ａの間に
１回転体（羽根車）３９があシ、前記圧力検出ボート３
５Ａと３４Ａ間を流れるガス（大気）の流量の増加とと
もに回転数が高くなる又は回転角が大きくなるしくみに
なっている。また、前記回転体３９には、パルス発生器
４０が連結されている。前記パルス発生器４０は、第３
図のように、ホトダイオード等の発光器４０Ａ１ホトト
ランジスタ等の受光器４０Ｂおよび円板３９Ｂから構成
され、前記回転体３９の軸４１に前記円板３９Ｂがその
中心で連結されている。前記円板３９Ｂには、穴がおい
ておシ、その穴が前記発光器４０Ａと受光器４０Ｂとを
結ぶ線上に来た時だけ前記発光器４０Ａの光を受光器４
０Ｂが受光する。よって前記円板３９Ｂの回転数が変化
（増加または減少）すれば、前記受光器３９Ｂが受光す
る光の回数も変化（増加または減少）する。よって、前
記受光器４０Ｂが受光する光の回数（パルス数）を測是
することで、前記圧力検出ボー）３５Ａと３４Ａ間のガ
ス流量変化（圧力変化）を電気信号として検出すること
が可能である。なお、第３図においては、図面をわかり
易くするため、円板３９Ｂには一つの穴しか形成されて
いないが、微少な穴を多数同心円上に等間隔で形成する
ことが望ましい。これによシ、回転体３９の微少な回転
（小さい回転角）を検出することが可能となる。As shown in FIG. 2, there is a rotating body (impeller) 39 between the pressure detection boats 35A and 34A, and the pressure detection boat 3
The mechanism is such that as the flow rate of gas (atmosphere) flowing between 5A and 34A increases, the number of rotations increases or the rotation angle increases. Further, a pulse generator 40 is connected to the rotating body 39. The pulse generator 40 is a third
As shown in the figure, it is composed of a light emitter 40A such as a photodiode, a light receiver 40B such as a phototransistor, and a disc 39B, and the disc 39B is connected to the shaft 41 of the rotating body 39 at its center. A hole is provided in the disk 39B, and only when the hole is on a line connecting the light emitter 40A and the light receiver 40B, the light from the light emitter 40A is transmitted to the light receiver 4.
0B receives light. Therefore, if the rotational speed of the disk 39B changes (increases or decreases), the number of times the light receiver 39B receives light also changes (increases or decreases). Therefore, by measuring the number of times (number of pulses) of light received by the light receiver 40B, it is possible to detect the gas flow rate change (pressure change) between the pressure detection board 35A and 34A as an electrical signal. be. Although only one hole is formed in the disk 39B in FIG. 3 in order to make the drawing easier to understand, it is desirable to form a large number of minute holes at equal intervals on concentric circles. This makes it possible to detect minute rotations (small rotation angles) of the rotating body 39.
これＫよシ、微小な圧力（Ｉ Ｘ １０−’ ｋｇ／Ｃ
ｌ１ｌ程度又はそれ以下）の変化を精度良く検出でき、
高い精度で反応処理室１９内の圧力を制御し、かつその
大気圧との圧力差を小さくできる。これによシ、反応処
理室１９内で形成される薄膜の蒸着速度を大きくでき、
その膜質及び膜厚のバラツキを少なくできる。このよう
に、本実施例によれは、前記電気信号により、前記反応
処理室１９内の圧力を自動制御することが可能である。This is K, a minute pressure (I x 10-' kg/C
It is possible to accurately detect changes in
The pressure within the reaction processing chamber 19 can be controlled with high precision, and the pressure difference between the pressure and the atmospheric pressure can be reduced. As a result, the deposition rate of the thin film formed in the reaction processing chamber 19 can be increased,
Variations in film quality and film thickness can be reduced. In this way, according to this embodiment, the pressure within the reaction processing chamber 19 can be automatically controlled by the electrical signal.
前記回転体３９および円板３９Ｂの材料は、例えば、ア
ルミニウム（ＡＩ）、のような質量の小さいものが使用
される。特に回転体３９０羽根部は、これらの慣性モー
メントは小さく、前記回転体３９及び円板３９Ｂ回転さ
せるための力は微小であり、要求される圧力測定の精度
（±Ｉ Ｘ １０−’ ｋｇ／ｃｔＡ ）Ｋくらべ無視
できる。。The rotating body 39 and the disc 39B are made of a material having a small mass such as aluminum (AI). In particular, the moment of inertia of the blades of the rotating body 390 is small, the force for rotating the rotating body 39 and the disc 39B is minute, and the required pressure measurement accuracy (±I x 10-' kg/ctA ) can be ignored compared to K. .
また上記微圧測定器３３Ａおよび３３Ｂのかわりに、次
に示す圧力測定器を使用してもよい。例えば、第４図の
ように細９４２の外周に、温度センサー４３Ａおよび４
３Ｂが設置されておシ、前記温度センサー４３Ａと４３
Ｂの中央にヒーター４４が設置されている。前記細管４
２内にガスの流れがないときは、前記ヒーター４４によ
る熱は、前記ヒーターの位置を頂点として左右均尋に分
布する。ガスの流れがあるときは、前記ヒーターによる
熱の分布は全体的に、ガスの流れ方向に移向するので、
前記温度センサー４３Ａと、前記温度センサー４３Ｂの
温度差からガス流量を知ることができる。Moreover, the following pressure measuring instruments may be used instead of the above-mentioned micro-pressure measuring instruments 33A and 33B. For example, as shown in FIG. 4, temperature sensors 43A and 4
3B is installed, and the temperature sensors 43A and 43
A heater 44 is installed in the center of B. Said thin tube 4
When there is no gas flow inside the heater 44, the heat from the heater 44 is evenly distributed on the left and right sides with the heater position as the apex. When there is a gas flow, the heat distribution by the heater is entirely shifted in the direction of the gas flow, so
The gas flow rate can be determined from the temperature difference between the temperature sensor 43A and the temperature sensor 43B.
前記微圧測定器３３Ａのかわシに、前記細管を前記圧力
検出ボート３５Ａと３４Ａの間に設置し、接続すれば、
前記圧力検出ボー）３５Ａと３４Ａの間のガス流量を測
定できるので、前記反応処理室１９内の圧力変化を検知
することができる。If the thin tube is installed between the pressure detection boats 35A and 34A and connected to the edge of the micropressure measuring device 33A,
Since the gas flow rate between the pressure detection units 35A and 34A can be measured, changes in the pressure inside the reaction processing chamber 19 can be detected.
以上説明したように、本願において開示された新規な技
術によれば、以下に述べる効果を得ることができる。As explained above, according to the novel technology disclosed in this application, the following effects can be obtained.
（１）反応処理室内の圧力変化を電気信号に変換するこ
とが可能な微圧測定器を設けたことによシ、反応処理室
内の圧力を自動制御することができる。(1) By providing a micro-pressure measuring device capable of converting pressure changes within the reaction processing chamber into electrical signals, the pressure within the reaction processing chamber can be automatically controlled.
（２）前記（１）の微圧測定器は、微小な圧力を検出す
ることが可能なので、ＣＶＤ膜の品質のバラツキ、不良
をなくすことができる。(2) Since the micro-pressure measuring device described in (1) above is capable of detecting micro-pressure, it is possible to eliminate variations in quality and defects in CVD films.
（３） 前記（１）訃よび（２）によシ、常圧ＣＶＤ
！！２置の信頼性を向上することができる。(3) For the above (1) death and (2) death, normal pressure CVD
! ! 2-position reliability can be improved.
以上本発明者によってなされた発明を、前記実施例に基
づき具体的に説明したが、本発明は、前記実施例に限定
されるものではなく、その要旨を逸脱しない範囲におい
て、種々変形し得ることは勿論である。Although the invention made by the present inventor has been specifically explained based on the above embodiments, the present invention is not limited to the above embodiments, and can be modified in various ways without departing from the gist thereof. Of course.
例えば、本発明は、空気調整関連の設備に適用してもよ
い。For example, the present invention may be applied to equipment related to air conditioning.
また、本発明は、真空関連装置での微圧検出器に適用し
てもよい。Further, the present invention may be applied to a low pressure detector in a vacuum-related device.
本願において開示される発明のうち代表的なものによっ
て得られる効果を簡単に説明すれば、下記のとおシであ
る。A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.
反応処理室内の圧力変化を電気信号に変換することが可
能な微圧測定器を設けることによシ、反応処理室内の圧
力を精度、感度よく自動制御することができる。By providing a micro-pressure measuring device capable of converting pressure changes within the reaction processing chamber into electrical signals, the pressure within the reaction processing chamber can be automatically controlled with high accuracy and sensitivity.
第１図は、本発明の実施例である常圧ＣＶＤ装置の反応
部の断面図、
第２図及び第３図は、前記第３図における微圧測定器３
３Ａ及び３４Ｂの構造を示す図、第４図は、本発明の実
施例である流量測定器の構造を示す図、
第５図は、従来技術による常圧ＣＶＤ装置の反応部の簡
略断面図、
第６図は、前記第１図における微圧測定器５の内部構造
を示した断面図である。
図中、１・・・反応処理室、２・・・排気管、３・・・
排気圧調整ダンパ、４・・・排気ファン、５・・・微圧
測定器、６．７・・・圧力検出ボート、１０・・・弾性
薄膜、１１、・・復元バネ、１２．１３・・・レバー、
１５・・・ワイヤー、１６．１７・・・滑車、１９・・
・反応処理室、２゜・・・支持軸、２１・・・サセプタ
、２１Ａ・・・試料台、２２・・・ウヱハー、２３・・
・バッファ部材、２４・・・ヒーター、２５・・・排気
ファン、２６・・・排気ガス、２７・・・排気圧調整ダ
ンパ、２９・・・フィルター、３０・・・ガス（大気）
、３３Ａ、３３Ｂ・・・微圧測定器、３４Ａ。
３５Ａ、３４Ｂ、３５Ｂ・・・圧力検出ボート、３６・
・・流量調整パルプ、３８・・・排気管、３９・・・回
転体、４０・・・パルス発生器、４１・・・連結軸、４
０Ａ・・・発光器、４０Ｂ・・・受光器、３９Ｂ・・・
円板、４２・・・細管、４３Ａ、４３Ｂ・・・温度セン
サー、４４・・・ヒーター、である。
第 １ 図
第 ３ 図
第 ４ 図
第 ５ 図
第 ６ 図FIG. 1 is a cross-sectional view of the reaction section of the atmospheric pressure CVD apparatus which is an embodiment of the present invention, and FIGS. 2 and 3 are the micro-pressure measuring device 3 in FIG.
3A and 34B, FIG. 4 is a diagram showing the structure of a flow rate measuring device according to an embodiment of the present invention, and FIG. 5 is a simplified cross-sectional view of a reaction section of a conventional atmospheric pressure CVD apparatus. FIG. 6 is a sectional view showing the internal structure of the low pressure measuring device 5 in FIG. 1. In the figure, 1... reaction processing chamber, 2... exhaust pipe, 3...
Exhaust pressure adjustment damper, 4... Exhaust fan, 5... Micro-pressure measuring device, 6.7... Pressure detection boat, 10... Elastic thin film, 11... Restoration spring, 12.13... ·lever,
15...wire, 16.17...pulley, 19...
・Reaction processing chamber, 2゜...support shaft, 21...susceptor, 21A...sample stand, 22...wafer, 23...
・Buffer member, 24... Heater, 25... Exhaust fan, 26... Exhaust gas, 27... Exhaust pressure adjustment damper, 29... Filter, 30... Gas (atmosphere)
, 33A, 33B...low pressure measuring device, 34A. 35A, 34B, 35B...pressure detection boat, 36.
...Flow rate adjustment pulp, 38...Exhaust pipe, 39...Rotating body, 40...Pulse generator, 41...Connection shaft, 4
0A... Emitter, 40B... Receiver, 39B...
Disc, 42... Thin tube, 43A, 43B... Temperature sensor, 44... Heater. Figure 1 Figure 3 Figure 4 Figure 5 Figure 6
Claims (1)
た排気系と、前記反応室内の圧力を測る微圧測定器とに
よりなる反応処理装置であって、前記微圧測定器は検出
した圧力を電気信号に変換し、前記電気信号により排気
系を制御することにより、前記反応室内の圧力を自動的
に制御する機能を備えたことを特徴とするウェハー処理
装置。 ２、２つの空間の一方の空間の圧力を規準として、他方
の空間の圧力、または、２つの空間の圧力差を検出する
微圧測定器であって、上記微圧測定手段は、上記２つの
空間を連結する手段と、その２つの空間内を流れる気体
の流量を測定する手段を持ち、上記２つの空間内を流れ
る気体により回転する回転体と、上記回転体の回転数に
応答して、上記回転数に対応するパルス信号を発生する
パルス発生手段を備えたことを特徴とする微圧測定器。[Scope of Claims] 1. A reaction processing apparatus comprising a reaction chamber used at normal pressure, an exhaust system connected to the reaction chamber, and a micropressure measuring device for measuring the pressure inside the reaction chamber, Wafer processing characterized in that the micro-pressure measuring device has a function of automatically controlling the pressure inside the reaction chamber by converting the detected pressure into an electrical signal and controlling an exhaust system using the electrical signal. Device. 2. A micro-pressure measuring instrument that detects the pressure in one of two spaces as a reference, or the pressure in the other space, or the pressure difference between the two spaces, wherein the micro-pressure measuring means A rotating body having means for connecting the spaces and means for measuring the flow rate of gas flowing in the two spaces, and a rotating body that is rotated by the gas flowing in the two spaces, and responding to the rotational speed of the rotating body, A micro-pressure measuring instrument characterized by comprising a pulse generating means for generating a pulse signal corresponding to the rotational speed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7143487A JPS63238281A (en) | 1987-03-27 | 1987-03-27 | Wafer treating device and micromanometer used therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7143487A JPS63238281A (en) | 1987-03-27 | 1987-03-27 | Wafer treating device and micromanometer used therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63238281A true JPS63238281A (en) | 1988-10-04 |
Family
ID=13460424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7143487A Pending JPS63238281A (en) | 1987-03-27 | 1987-03-27 | Wafer treating device and micromanometer used therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63238281A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0237716A (en) * | 1988-07-27 | 1990-02-07 | Tokyo Electron Ltd | Semiconductor processor |
| JPH03107464A (en) * | 1989-08-31 | 1991-05-07 | American Teleph & Telegr Co <Att> | Method and device for accumulating dielectric film |
| JPH03229874A (en) * | 1990-02-05 | 1991-10-11 | Matsushita Electric Ind Co Ltd | Film depositing device |
| US5088922A (en) * | 1990-01-23 | 1992-02-18 | Tokyo Electron Sagami Limited | Heat-treatment apparatus having exhaust system |
| US5091207A (en) * | 1989-07-20 | 1992-02-25 | Fujitsu Limited | Process and apparatus for chemical vapor deposition |
| US5407349A (en) * | 1993-01-22 | 1995-04-18 | International Business Machines Corporation | Exhaust system for high temperature furnace |
| US6139640A (en) * | 1998-08-12 | 2000-10-31 | Advanced Micro Devices, Inc. | Chemical vapor deposition system and method employing a mass flow controller |
| JP2013532391A (en) * | 2010-07-14 | 2013-08-15 | プリマックス インコーポレイテッド | Process chamber pressure control system and control method |
-
1987
- 1987-03-27 JP JP7143487A patent/JPS63238281A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0237716A (en) * | 1988-07-27 | 1990-02-07 | Tokyo Electron Ltd | Semiconductor processor |
| US5091207A (en) * | 1989-07-20 | 1992-02-25 | Fujitsu Limited | Process and apparatus for chemical vapor deposition |
| JPH03107464A (en) * | 1989-08-31 | 1991-05-07 | American Teleph & Telegr Co <Att> | Method and device for accumulating dielectric film |
| US5088922A (en) * | 1990-01-23 | 1992-02-18 | Tokyo Electron Sagami Limited | Heat-treatment apparatus having exhaust system |
| JPH03229874A (en) * | 1990-02-05 | 1991-10-11 | Matsushita Electric Ind Co Ltd | Film depositing device |
| US5407349A (en) * | 1993-01-22 | 1995-04-18 | International Business Machines Corporation | Exhaust system for high temperature furnace |
| US5567149A (en) * | 1993-01-22 | 1996-10-22 | International Business Corporation | Exhaust system for high temperature furnace |
| US5752819A (en) * | 1993-01-22 | 1998-05-19 | International Business Machines Corporation | Exhaust system for high temperature furnace |
| US6139640A (en) * | 1998-08-12 | 2000-10-31 | Advanced Micro Devices, Inc. | Chemical vapor deposition system and method employing a mass flow controller |
| JP2013532391A (en) * | 2010-07-14 | 2013-08-15 | プリマックス インコーポレイテッド | Process chamber pressure control system and control method |
| US10161567B2 (en) | 2010-07-14 | 2018-12-25 | Spts Technologies Limited | Process chamber pressure control system and method |
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