JPS6046049U - semiconductor pressure sensor - Google Patents
semiconductor pressure sensorInfo
- Publication number
- JPS6046049U JPS6046049U JP13849883U JP13849883U JPS6046049U JP S6046049 U JPS6046049 U JP S6046049U JP 13849883 U JP13849883 U JP 13849883U JP 13849883 U JP13849883 U JP 13849883U JP S6046049 U JPS6046049 U JP S6046049U
- Authority
- JP
- Japan
- Prior art keywords
- pressure sensor
- semiconductor pressure
- semiconductor
- diaphragm
- recorded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の半導体圧力セン垂の構成を示す断面図、
第２図は同圧カセンザの特性を示す図、第３図はこの考
案の一実施例の構成を宗す断面図、第４図は同実施例の
特性を示す図である。
１１・・・台座、１３，１４・・・ダイヤフラム、１５
．１６・・・拡散抵抗（ピエゾ抵抗）。Figure 1 is a sectional view showing the configuration of a conventional semiconductor pressure sensor.
FIG. 2 is a diagram showing the characteristics of the isobaric gas sensor, FIG. 3 is a sectional view showing the configuration of an embodiment of this invention, and FIG. 4 is a diagram showing the characteristics of the same embodiment. 11...Pedestal, 13,14...Diaphragm, 15
．． 16... Diffusion resistance (piezo resistance).
Claims (1)
、各ダイヤフラムに各々ピエゾ抵抗を形成してなる半導
体圧力センサ。A semiconductor pressure sensor in which a plurality of diaphragms with different diameters are formed on a semiconductor substrate, and a piezoresistor is formed in each diaphragm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13849883U JPS6046049U (en) | 1983-09-07 | 1983-09-07 | semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13849883U JPS6046049U (en) | 1983-09-07 | 1983-09-07 | semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6046049U true JPS6046049U (en) | 1985-04-01 |
Family
ID=30310735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13849883U Pending JPS6046049U (en) | 1983-09-07 | 1983-09-07 | semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6046049U (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007512535A (en) * | 2003-11-24 | 2007-05-17 | エム ケー エス インストルメンツ インコーポレーテッド | Integrated absolute / differential pressure transducer |
| JP2009503445A (en) * | 2005-07-22 | 2009-01-29 | エスティーマイクロエレクトロニクス エス．アール．エル． | Integrated pressure sensor with dual measurement scale and high full scale value |
| JP2009168616A (en) * | 2008-01-16 | 2009-07-30 | Toyota Motor Corp | Pressure detector |
| JP2012078239A (en) * | 2010-10-04 | 2012-04-19 | Denso Corp | Pressure sensor and manufacturing method thereof |
| JP2013205403A (en) * | 2012-03-29 | 2013-10-07 | Toshiba Corp | Pressure sensor and microphone |
| WO2018116549A1 (en) * | 2016-12-20 | 2018-06-28 | 株式会社村田製作所 | Pressure sensor element and pressure sensor module provided with same |
| JP2021501324A (en) * | 2017-10-31 | 2021-01-14 | エンサイト エルエルシー | Wide range micro pressure sensor |
-
1983
- 1983-09-07 JP JP13849883U patent/JPS6046049U/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007512535A (en) * | 2003-11-24 | 2007-05-17 | エム ケー エス インストルメンツ インコーポレーテッド | Integrated absolute / differential pressure transducer |
| JP2009503445A (en) * | 2005-07-22 | 2009-01-29 | エスティーマイクロエレクトロニクス エス．アール．エル． | Integrated pressure sensor with dual measurement scale and high full scale value |
| JP2009168616A (en) * | 2008-01-16 | 2009-07-30 | Toyota Motor Corp | Pressure detector |
| JP2012078239A (en) * | 2010-10-04 | 2012-04-19 | Denso Corp | Pressure sensor and manufacturing method thereof |
| JP2013205403A (en) * | 2012-03-29 | 2013-10-07 | Toshiba Corp | Pressure sensor and microphone |
| US8973446B2 (en) | 2012-03-29 | 2015-03-10 | Kabushiki Kaisha Toshiba | Pressure sensor and microphone |
| US9759618B2 (en) | 2012-03-29 | 2017-09-12 | Kabushiki Kaisha Toshiba | Pressure sensor and microphone |
| US10082430B2 (en) | 2012-03-29 | 2018-09-25 | Kabushiki Kaisha Toshiba | Pressure sensor and microphone |
| WO2018116549A1 (en) * | 2016-12-20 | 2018-06-28 | 株式会社村田製作所 | Pressure sensor element and pressure sensor module provided with same |
| US11280692B2 (en) | 2016-12-20 | 2022-03-22 | Murata Manufacturing Co., Ltd. | Pressure sensor device and pressure sensor module including same |
| JP2021501324A (en) * | 2017-10-31 | 2021-01-14 | エンサイト エルエルシー | Wide range micro pressure sensor |
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