JPS6045917A - Production of thin film magnetic head - Google Patents
Production of thin film magnetic headInfo
- Publication number
- JPS6045917A JPS6045917A JP15330383A JP15330383A JPS6045917A JP S6045917 A JPS6045917 A JP S6045917A JP 15330383 A JP15330383 A JP 15330383A JP 15330383 A JP15330383 A JP 15330383A JP S6045917 A JPS6045917 A JP S6045917A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- layer
- piq
- photoresist
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は薄膜磁気ヘヅドの製造方法に係り、特にフロン
トギャップおよびパックギャップ形成部近傍の絶縁島形
状を軸止する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a method of manufacturing a thin film magnetic head, and more particularly to a method of pivoting an insulating island shape near a front gap and a pack gap forming portion.
薄膜磁気へ、ドの従来の構造を第１図に示す。 A conventional structure for thin film magnetism is shown in FIG.
同図は媒体摺動面と垂直方向の断面図である。This figure is a sectional view taken in a direction perpendicular to the medium sliding surface.
基板１上に第１磁性層２．ギャップ長を規定する非磁性
絶縁層３．コイル導体層５．絶縁層６゜第２磁性層４を
順次積層した構成で、第１磁性層と第２磁性層はパック
ギャップ８で接続さね、磁気回路を作っている。A first magnetic layer 2 on the substrate 1. 3. Non-magnetic insulating layer that defines the gap length. Coil conductor layer5. It has a structure in which an insulating layer 6 and a second magnetic layer 4 are sequentially laminated, and the first magnetic layer and the second magnetic layer are connected by a pack gap 8 to form a magnetic circuit.
従来、絶縁層６のフロントギャップ７とバックギャップ
８近傍の形状は、同図にα、βの符号で示したテーバ角
でいえば、３０°〜５ヂに選定され、また、同図にＰ、
Ｑで示した部分は滑らかに形成されている。これは、こ
の１に積層する第２磁性層のテーバ部分での磁気特性や
膜厚の細り、磁気漏洩などを考慮したためである。Conventionally, the shape of the insulating layer 6 in the vicinity of the front gap 7 and back gap 8 has been selected to be 30° to 5° in terms of Taber angles indicated by α and β in the same figure. ,
The part indicated by Q is formed smoothly. This is because consideration has been given to magnetic properties, thinning of the film thickness, magnetic leakage, etc. at the tapered portion of the second magnetic layer laminated to the first magnetic layer.
従来、このような形状の絶縁層を実現するために、絶縁
材料にＡＺ系ホトレジスト（シブレー社製）を使ってい
る。すなわち、フロントギヤ、プとパックギャップのホ
トレジストを除去した後約ｎｏ℃の熱処理によって、同
図の如くＰ、Ｑの部分を滑らかにするＬｌ／１つもので
ある。Conventionally, in order to realize an insulating layer having such a shape, an AZ-based photoresist (manufactured by Sibley) has been used as an insulating material. That is, after removing the photoresist of the front gear, P and pack gap, heat treatment is performed at approximately no.degree. C. to make the P and Q portions smooth as shown in the figure.
ところが、この従来技術では絶縁材料の耐熱性が低いこ
とから、第２磁性層はメッキで形成しなければならない
。また、へ、ド組立工程で保護板の接着にガラス接着を
使えなり等、後工程の処理溶度を低温化抑えなけれはな
らないという問題をかかえている。However, in this prior art, the second magnetic layer must be formed by plating because the heat resistance of the insulating material is low. In addition, there are problems in that it is not possible to use glass adhesive to bond the protective plate in the assembly process, and the solubility in subsequent processes must be kept low.
一方、絶縁材料に高耐熱性のポリイミド系樹脂や無機絶
縁材料を使い、上記他プロセスでの問題を解決した薄膜
磁気ヘッド例も知られている。しかし、この場合は、第
２図に示したように、絶縁層のＰ、Ｑの部分を滑らかに
することはできず、この近傍では磁気特性のよい第２磁
性層を形成することはできなかった。On the other hand, there are also known examples of thin-film magnetic heads that use highly heat-resistant polyimide resins or inorganic insulating materials as insulating materials to solve the problems encountered in other processes. However, in this case, as shown in Figure 2, it is not possible to make the P and Q portions of the insulating layer smooth, and it is not possible to form a second magnetic layer with good magnetic properties in this vicinity. Ta.
以上説明したように、従来技術ではヘッド特性が良好で
、しかも後工程におけるガラス接着などの高温プロセス
に耐え得る耐熱性の高い薄膜磁気ヘッドを作ることはで
きなかった。As explained above, with the prior art, it has not been possible to produce a thin film magnetic head with good head characteristics and high heat resistance that can withstand high-temperature processes such as glass bonding in subsequent steps.
〔発明の目的〕
本発明の目的は、上述した従来の薄膜磁気ヘッドの欠点
を解決し、熱流動性の悪い高耐熱性樹脂や無機絶縁材料
を使っても、へ、ド特性良好な薄膜磁気ヘッドを作れる
製造方法を提供することにある。[Object of the Invention] The object of the present invention is to solve the above-mentioned drawbacks of the conventional thin film magnetic head, and to create a thin film magnetic head with good thermal properties even when using a highly heat-resistant resin with poor thermal fluidity or an inorganic insulating material. The purpose is to provide a manufacturing method that can make heads.
本発明の要点は、フロントギャップおよびパックギャッ
プの絶縁層をエツチングで除去した後、絶縁層のテーパ
部分に滑らかな表面形状を得るために有機材料をスピン
塗布し、この表面形状をドライエツチング法にょシ、最
初の絶縁層に転写する点にある。The key point of the present invention is that after removing the insulating layer in the front gap and pack gap by etching, an organic material is spin coated on the tapered part of the insulating layer to obtain a smooth surface shape, and this surface shape is then etched using a dry etching method. The second step is to transfer it to the first insulating layer.
以下、本発明を実施例により具体的に説明する。 Hereinafter, the present invention will be specifically explained with reference to Examples.
第３図はポリイミド系樹脂であるＰＩＱ（日立化成（株
）製）を絶縁層に使った実施例で、本発明に関連する部
分の製造工程図である。FIG. 3 shows an example in which polyimide resin PIQ (manufactured by Hitachi Chemical Co., Ltd.) is used for the insulating layer, and is a manufacturing process diagram of a portion related to the present invention.
この工程図で順を追って説明する。The process will be explained step by step using this process diagram.
に）コイル導体層５を形成した後、ＰＩＱをスピン塗布
し、３５０℃で硬化させる。b) After forming the coil conductor layer 5, PIQ is spin coated and cured at 350°C.
（ロ）エツチングによシフロントギャップ７およびパッ
クギャップ部８のＰＩＱを除去する。(b) Remove the PIQ in the front gap 7 and pack gap portion 8 by etching.
０ホトレジストをスピン塗布で基板全面に塗布し、テー
パ部近傍に滑らかな表面形状を作る。0 photoresist is applied to the entire surface of the substrate by spin coating to create a smooth surface shape near the tapered portion.
０ドライエツチング（イオンエツチング、反応性プラズ
マエツチング等）化より、所定時ｊｌ＋全面をエツチン
グし、ＰＩＱ絶縁層にホトレジストの表面状態を転写す
る。By dry etching (ion etching, reactive plasma etching, etc.), the entire surface of jl+ is etched at a predetermined time, and the surface state of the photoresist is transferred to the PIQ insulating layer.
■残ったホトレジストを除去する。■Remove the remaining photoresist.
以上の工程によって形成されるＰＩＱ絶縁層は従来例で
述べたホトレジストを絶縁一層に使った絶縁層形状と同
等のものが得られる。上述工程Ｃ）のホトレジストはＡ
Ｚ系レジスト、ＯＭＲレジスト（東京応化製）等いずれ
でも良く、また硬化したＰＩＱと選択エツチング可能な
未硬化ＰＩＱ（例えば１５０℃で乾燥した膜はＮ、Ｎ、
ジメチルアセトアミドやＮ、メチルジピロリドンに溶け
るが、硬化したＰＩＱ膜は溶けない）を使うこともでき
る。The PIQ insulating layer formed by the above steps has the same shape as the insulating layer using photoresist as the single insulating layer described in the conventional example. The photoresist in step C) above is A
Any Z-based resist, OMR resist (manufactured by Tokyo Ohka), etc. may be used, and cured PIQ and uncured PIQ that can be selectively etched (for example, a film dried at 150°C may be N, N,
(It is soluble in dimethylacetamide, N, and methyldipyrrolidone, but the cured PIQ film is not soluble) can also be used.
上述した実施例のように、ＰＩＱを絶縁層に使った場合
、ＰＩＱの成膜と同時にコイルの凹凸は平坦化されるが
、８１０ ＋ ８１０２などの無機材料を絶縁層に使っ
た場合、コイル凹凸の平坦化工程が必要になる。本発明
に一成る絶縁層のテーパ形状の補正方法によれは、この
補正工程中に同時に平坦化も行うことができる。その実
施例を第４図に示す。各工程は第６図と全く同じである
。ただ、工程（６）は無機絶縁材料をスパッタや蒸着で
成膜する点が異なる。また、工程Ｃ）のホトレジストは
ＡＺ系レジストの方が平坦化特性が良く好しい。As in the above example, when PIQ is used for the insulating layer, the unevenness of the coil is flattened at the same time as the PIQ film is formed, but when an inorganic material such as 810 + 8102 is used for the insulating layer, the unevenness of the coil is flattened. A planarization process is required. According to the method of correcting the tapered shape of an insulating layer according to the present invention, planarization can be simultaneously performed during this correction step. An example thereof is shown in FIG. Each step is exactly the same as in FIG. However, step (6) is different in that an inorganic insulating material is formed by sputtering or vapor deposition. Further, as the photoresist in step C), an AZ-based resist is preferred because of its better flattening properties.
なお、以上２つの実施例の工程中、４）のドライエツチ
ングの条件はホトレジストのエッチ速度が絶縁層のエッ
チ速度よシ若干大きいか等しい条件に選ぶのがよい。In the process of the above two embodiments, the dry etching condition 4) is preferably selected such that the etch rate of the photoresist is slightly higher than or equal to the etch rate of the insulating layer.
以上説明したように、本発明によれは高耐熱性樹脂や無
機材料を絶縁層に使った場合でも、ホトレジストを絶縁
層に使った場合と同等の絶縁層形状を得ることができる
ことがわかる。As explained above, it can be seen that according to the present invention, even when a highly heat-resistant resin or an inorganic material is used for the insulating layer, it is possible to obtain an insulating layer shape equivalent to that when a photoresist is used for the insulating layer.
本発明によれは、熱流動性に乏しい高耐熱性樹脂や無機
絶縁材料を絶縁層に使った薄膜磁気へ、ドにおいて、ホ
トレジストを絶縁層に使った場合と同等の絶縁層形状を
実現できるので、へ、ド特性が良好で、しかもガラス接
着が可能となり、耐摩性もすぐれた薄膜磁気ヘッドを作
ることができる。According to the present invention, it is possible to realize an insulating layer shape equivalent to that when photoresist is used for the insulating layer in a thin film magnetic film using a highly heat-resistant resin or inorganic insulating material with poor thermal fluidity for the insulating layer. It is possible to produce a thin film magnetic head that has good magnetic properties, can be bonded to glass, and has excellent abrasion resistance.
第１図はホトレジストを絶縁層に使った従来の薄膜磁気
ヘッドの断面図、第２図は他の従来の薄膜磁気ヘッドの
断面図、第３図は本発明になる実施例を説明するための
工程図、第４図は他の実施例を説明するための工程図で
ある。
１・・・基板、 ２・・・第１磁性層、５・・・絶縁層
、 ４・・・第２磁性層、５・・・コイル導体層、
６・・・ホトレジストからなる絶縁層、７・・・フロン
トギャップ形成部、
８・・・パックギャップ形成部、
６１・・・耐熱性樹脂からなる絶縁層、１０・・・ホト
レジスト、
６２・・・無機材料からなる絶縁層。
代理人弁理士 高 橋 明 夫
”７ＰＩ図
オ？閃
第３図FIG. 1 is a cross-sectional view of a conventional thin-film magnetic head using photoresist as an insulating layer, FIG. 2 is a cross-sectional view of another conventional thin-film magnetic head, and FIG. 3 is a cross-sectional view for explaining an embodiment of the present invention. Process diagram, FIG. 4 is a process diagram for explaining another embodiment. DESCRIPTION OF SYMBOLS 1... Substrate, 2... First magnetic layer, 5... Insulating layer, 4... Second magnetic layer, 5... Coil conductor layer, 6... Insulating layer made of photoresist, 7 ...Front gap forming part, 8... Pack gap forming part, 61... Insulating layer made of heat-resistant resin, 10... Photoresist, 62... Insulating layer made of inorganic material. Representative Patent Attorney Akio Takahashi “7PI Diagram O?Sen Figure 3
Claims (1)
る絶縁層と上記第１磁性層き磁気回路を作る第２磁性層
とを順次所定形状に積層してなる薄膜磁気ヘッドにおい
て、上記絶縁層が、絶縁層を成膜する工程、該絶縁層の
へラドギャップ形成部および上記第１．第２磁性層の接
続部をエツチングによシ除去する工程、基板全面に有機
材料を形成した後、所定時間エツチングを施す工程およ
び前記有機材料の残りを除去する工程さによ多形成され
ることを特徴とする薄膜磁気ヘッドの製造方法。1. In a thin-film magnetic head in which a first magnetic layer, an insulating layer containing a coil conductor layer therein, and a second magnetic layer forming a magnetic circuit with the first magnetic layer are sequentially laminated in a predetermined shape on a substrate, the above-described The step of forming an insulating layer, the helad gap forming portion of the insulating layer, and the first step described above. A step of removing the connecting portion of the second magnetic layer by etching, a step of forming an organic material on the entire surface of the substrate and then etching it for a predetermined time, and a step of removing the remaining organic material. A method for manufacturing a thin film magnetic head characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15330383A JPS6045917A (en) | 1983-08-24 | 1983-08-24 | Production of thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15330383A JPS6045917A (en) | 1983-08-24 | 1983-08-24 | Production of thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6045917A true JPS6045917A (en) | 1985-03-12 |
Family
ID=15559527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15330383A Pending JPS6045917A (en) | 1983-08-24 | 1983-08-24 | Production of thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6045917A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6238517A (en) * | 1985-08-12 | 1987-02-19 | Sony Corp | Production of thin film magnetic head |
-
1983
- 1983-08-24 JP JP15330383A patent/JPS6045917A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6238517A (en) * | 1985-08-12 | 1987-02-19 | Sony Corp | Production of thin film magnetic head |
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