JPS6042863A - Photo-driven type semiconductor device - Google Patents

Photo-driven type semiconductor device

Info

Publication number
JPS6042863A
JPS6042863A JP15127083A JP15127083A JPS6042863A JP S6042863 A JPS6042863 A JP S6042863A JP 15127083 A JP15127083 A JP 15127083A JP 15127083 A JP15127083 A JP 15127083A JP S6042863 A JPS6042863 A JP S6042863A
Authority
JP
Japan
Prior art keywords
conductor
light
semiconductor element
cylinder
fixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15127083A
Other languages
Japanese (ja)
Inventor
Seiichi Yoshida
吉田 茂一
Toyohiko Kiyohara
豊彦 清原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15127083A priority Critical patent/JPS6042863A/en
Publication of JPS6042863A publication Critical patent/JPS6042863A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4295Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To enable to stably and easily mount a semiconductor element in a package by a method wherein hardened type resin is cast-adhered between a conductor and an insulation cylinder. CONSTITUTION:Above a light guide 6 fixed and loaded to the insulation cylinder 5 and above an electrode 3 fixed to the end surface of the cylinder 5, the semiconductor element 1 and the conductor 2 formed integrally therewith are positioned at a position of ignition by the minimum photo energy. Thereafter, the hardened resin 7 is cast-loaded between the outer peripheral surface of the conductor 2 and the inner peripheral surface of the cylinder 5. Thereby, the accuracy of processing the conductor 2 and the cylinder 5 do not come into problem. Therefore, labor saving due to the reduction of processes for improvement of the processing accuracy of the conductor 2 is contrived, and the element 1 is fixed to the package without positional slippage. As a result, the improvement of yield and reliability of the device is enabled.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は、光駆動サイリスタのパッケージ内に半導体
索子を装着する光駆動半導体装置に関するもの゛である
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an optically driven semiconductor device in which a semiconductor cable is mounted within a package of an optically driven thyristor.

〔従来技術〕[Prior art]

第1図は従来の光駆動サイリスクの平型半導体装置の断
面図である。1は一表面中央部に光トリガ受光部を有す
る半導体素子、2は前記半導体索子1の光トリガ受光部
面の対面に密層接合され、半導体索子1をパッケージに
支持固定する4電体で、半導体索子1の熱的歪曲を緩和
するために熱膨張特性が半導体索子1のそれに類似した
モリブテン等からなる。3は前記半導体素子10九トリ
ガ受光部面に形成された’414kiに加圧接触された
第1の′#41極体、4は前記導電体2に加圧接触され
た第2の電極体、5は前記半導体素子1および導電体2
を包囲し、第1の電極体3および第2の14i極体4に
よって気密固着されたパンケージを構成する絶縁筒体で
ある。6は前記半導体素子1を点弧させるための光信号
を導くガラス等のライト吾イドであり、先出刃先端が半
導体索子1の光トリガ受光部に近接し、他方元入力端部
側は絶縁筒体5に設けられた貫通孔を介して絶縁筒体5
に支持固定され、端面は絶縁筒体5の外部へ導かれてい
る。
FIG. 1 is a cross-sectional view of a conventional optically driven SiRISF flat semiconductor device. Reference numeral 1 denotes a semiconductor element having a light trigger light-receiving section in the center of one surface, and 2 a four-electronic body which is closely bonded to the opposite surface of the light trigger light-receiving section of the semiconductor cable 1 and supports and fixes the semiconductor cable 1 to the package. In order to alleviate thermal distortion of the semiconductor cord 1, the semiconductor cord 1 is made of molybdenum or the like having thermal expansion characteristics similar to that of the semiconductor cord 1. 3 is a first '#41 pole body that is pressed into contact with '414ki formed on the surface of the trigger light receiving portion of the semiconductor element 109; 4 is a second electrode body that is pressed and contacted with the conductor 2; 5 is the semiconductor element 1 and the conductor 2;
It is an insulating cylindrical body that constitutes a pan cage that surrounds the 14i electrode body and is hermetically fixed by the first electrode body 3 and the second 14i pole body 4. Reference numeral 6 denotes a light guide made of glass or the like that guides an optical signal for igniting the semiconductor element 1, the leading edge of which is close to the optical trigger light receiving part of the semiconductor cable 1, and the other input end side is insulated. The insulating cylinder 5 is inserted through the through hole provided in the cylinder 5.
The end face is guided to the outside of the insulating cylinder 5.

このように構成された従来の光駆動サイリスタは、半導
体素子1の中央部に位置する光トリガ礎光部に光信号を
伝送し、できるだけ低い光エネルギーでサイリスタを点
弧させることが必要である。
In the conventional optically driven thyristor configured as described above, it is necessary to transmit an optical signal to the optical trigger base light section located at the center of the semiconductor device 1, and to fire the thyristor with as low optical energy as possible.

ライトガイド6により【導かれた光エネルギーは半導体
素子1内で電気エネルギーに変換されてサイリスタを点
弧させるため、光エネルギーから電気エネルギーへの変
換効率を十分に高く保ち、最小の光エネルギーでサイリ
スタを点弧させるためのライトガイド6の光出力端と半
導体素子10光トリガ受元部の位置決めを50μm程度
の精度で行った後、光トリガ受光部の位置ずれを起さな
いよう導電体2を絶縁筒体5に密着固定させている。
The light energy guided by the light guide 6 is converted into electrical energy within the semiconductor element 1 and ignites the thyristor, so the conversion efficiency from light energy to electrical energy is kept sufficiently high and the thyristor is activated with minimum light energy. After positioning the light output end of the light guide 6 and the light trigger receiving part of the semiconductor element 10 for ignition with an accuracy of about 50 μm, the conductor 2 is adjusted so as not to cause misalignment of the light trigger receiving part. It is closely fixed to the insulating cylinder 5.

しかLながら、絶縁筒体5は機械的強度が強く、かつ、
絶縁性、熱伝導性の良好なアルミナなどの磁器性絶縁体
で構成されているのが通常であり、このため仕上り形状
を50μm程度の高精度で形成、さらに加工することは
その材質上から困難である。そのため半導体素子1と一
体となった導電体2の支持固定に際しては、導電体2を
絶縁筒体5の仕上り形状に合わせて個々に加工するため
に時間的労力を要し、半導体装置の組立工程が複雑化、
長期化し、さらに歩留り低下の原因となっていた。
However, the insulating cylinder 5 has strong mechanical strength and
It is usually composed of a porcelain insulator such as alumina, which has good insulation and thermal conductivity, so it is difficult to form the finished shape with a high precision of about 50 μm and further process it due to the material. It is. Therefore, when supporting and fixing the conductor 2 integrated with the semiconductor element 1, it takes time and effort to individually process the conductor 2 to match the finished shape of the insulating cylinder 5, and the process of assembling the semiconductor device becomes complicated,
This took a long time and caused a further drop in yield.

L発明の概要〕 この発明は、上記のような従来のものの欠点を除去する
ためになされたもので、導電体と絶縁筒体の間に硬化性
樹脂を注入接着することにより半導体素子の位置ずれを
防止し1組立工程の量産性。
L Summary of the Invention] This invention was made to eliminate the drawbacks of the conventional products as described above, and by injecting and adhering a curable resin between the conductor and the insulating cylinder, it is possible to eliminate the misalignment of the semiconductor element. Prevents mass production in one assembly process.

信頼性を向上させた半導体装置を提供することを目的と
したものである。
The purpose is to provide a semiconductor device with improved reliability.

〔発明の実施例〕[Embodiments of the invention]

第2図はこの発明の一実施例である光駆動サイリスタの
平型半導体装置の断面図である。この図で、1〜6は第
1図に示した従来のものと全く同一のものである。1は
前記導電体2の外周面と絶縁筒体5の内周面の間に挿入
された・硬化性樹脂で、注入硬化に伴5樹脂流出防止の
ため適度の粘性を有したゴム等からなる。
FIG. 2 is a sectional view of a flat semiconductor device of an optically driven thyristor, which is an embodiment of the present invention. In this figure, numerals 1 to 6 are exactly the same as the conventional one shown in FIG. 1 is a curable resin inserted between the outer circumferential surface of the conductor 2 and the inner circumferential surface of the insulating cylinder 5, and is made of rubber or the like with appropriate viscosity to prevent resin from flowing out as the resin is injected and hardened. .

・上記のように構成された装置においては、絶縁筒体5
に固定!!着されたライトガイド6および絶縁筒体5の
端面に固層された第1の電極体3上で半導体素子1とこ
れと一体となった4電体2を最少の光エネルギーで点弧
する位置に位置決め後、導電体2の外周面と絶縁筒体5
の内周面の間に硬化性樹脂1を注入装着する。このため
導電体2および絶縁筒体5の加工精度は全く問題となら
ず、4電体2の加工N直向上のための工程削減による省
力化がはかれ、半導体素子1が位置ずれすることなくパ
ッケージに固定されるため装置の歩留り、信頼性向上が
可能となる。
- In the device configured as above, the insulating cylinder 5
Fixed to! ! A position where the semiconductor element 1 and the four electric bodies 2 integrated therewith are ignited with the minimum light energy on the attached light guide 6 and the first electrode body 3 solidly layered on the end face of the insulating cylinder 5. After positioning, the outer peripheral surface of the conductor 2 and the insulating cylinder 5
A curable resin 1 is injected and installed between the inner circumferential surfaces of. Therefore, the processing accuracy of the conductor 2 and the insulating cylindrical body 5 is not a problem at all, and labor is saved by reducing the number of steps to improve the N accuracy of machining the 4-electric body 2, and the semiconductor element 1 is not misaligned. Since it is fixed to the package, it is possible to improve the yield and reliability of the device.

〔発明の効果〕〔Effect of the invention〕

この発明は、以上説明したように、平屋パンケージを有
する半導体装置において、導電体と絶縁筒体の間に硬化
性樹脂を注入固層するという簡単な構造により、半導体
素子をパッケージ内に安定、かつ、容易に装着し、半導
体素子の位置ずれを防止し、パッケージの組立J:程削
減をはかり、歩留りおよび信頼性の同上をはかることが
できる効果がある。
As explained above, in a semiconductor device having a one-story pancage, the present invention has a simple structure in which a curable resin is injected and solidified between a conductor and an insulating cylindrical body, so that a semiconductor element can be stably housed in a package. It is possible to easily mount the semiconductor element, prevent misalignment of the semiconductor element, reduce assembly time of the package, and improve yield and reliability.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の光駆動サイリスタの平型半導体装置を示
す断面図、亀2図はこの発明の一実施例を示す断面図で
ある。 図中、1は半導体素子、2は導電体、3はMlの電極体
、4は第2の電極体、5は絶縁筒体、6はライトガイド
、1は硬化性樹脂である。 なお、図中の同一符号は同一または相当部分を示すもの
とする。 代理人 大岩増雄 (外2名)
FIG. 1 is a sectional view showing a conventional optically driven thyristor flat semiconductor device, and FIG. 2 is a sectional view showing an embodiment of the present invention. In the figure, 1 is a semiconductor element, 2 is a conductor, 3 is an Ml electrode body, 4 is a second electrode body, 5 is an insulating cylinder, 6 is a light guide, and 1 is a curable resin. Note that the same reference numerals in the figures indicate the same or corresponding parts. Agent Masuo Oiwa (2 others)

Claims (1)

【特許請求の範囲】[Claims] 一表面中央部に光トリガ用受光部を有する半導体素子、
この半導体索子の受光部裏面全面に接合固着された導電
体、この導電体と前記半導体素子を挾持する第1および
第2の電極体、前記半導体素子と前記導電体を包囲固着
し前記第1および第2の141極体によって両端面な気
密固着された絶縁筒体、この絶縁筒体を貫通し前記半導
体素子の光トリガ用受光部に光出力端が近接して設けら
れたライトガイド、前記絶縁筒体内周と前記導電体外周
の間に挿入され前記半導体素子と一体となった前記導電
体を前記絶縁筒体に固着する硬化性樹脂とを備えたこと
を特徴とする光駆動半導体装置。
A semiconductor element having a light-receiving part for a light trigger in the center of one surface;
A conductor is bonded and fixed to the entire back surface of the light-receiving part of the semiconductor cable; first and second electrode bodies sandwiching the conductor and the semiconductor element; and an insulating cylindrical body whose both ends are hermetically fixed by a second 141-pole body, a light guide whose light output end is provided in close proximity to the light-triggering light-receiving portion of the semiconductor element, passing through the insulating cylindrical body; An optically driven semiconductor device comprising: a curable resin inserted between the inner periphery of the insulating cylinder and the outer periphery of the conductor to fix the conductor integrated with the semiconductor element to the insulating cylinder.
JP15127083A 1983-08-17 1983-08-17 Photo-driven type semiconductor device Pending JPS6042863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15127083A JPS6042863A (en) 1983-08-17 1983-08-17 Photo-driven type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15127083A JPS6042863A (en) 1983-08-17 1983-08-17 Photo-driven type semiconductor device

Publications (1)

Publication Number Publication Date
JPS6042863A true JPS6042863A (en) 1985-03-07

Family

ID=15514994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15127083A Pending JPS6042863A (en) 1983-08-17 1983-08-17 Photo-driven type semiconductor device

Country Status (1)

Country Link
JP (1) JPS6042863A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306082A (en) * 1992-06-12 1994-04-26 James Karlin Appliance doors and panels

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134941A (en) * 1979-04-06 1980-10-21 Mitsubishi Electric Corp Semiconductor device
JPS5750439A (en) * 1980-09-12 1982-03-24 Hitachi Ltd Semiconductor device
JPS57180137A (en) * 1981-04-30 1982-11-06 Hitachi Ltd Semicondudtor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134941A (en) * 1979-04-06 1980-10-21 Mitsubishi Electric Corp Semiconductor device
JPS5750439A (en) * 1980-09-12 1982-03-24 Hitachi Ltd Semiconductor device
JPS57180137A (en) * 1981-04-30 1982-11-06 Hitachi Ltd Semicondudtor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306082A (en) * 1992-06-12 1994-04-26 James Karlin Appliance doors and panels

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