JPS6039833A - Ta↓2O↓5薄膜のエツチング方法 - Google Patents
Ta↓2O↓5薄膜のエツチング方法Info
- Publication number
- JPS6039833A JPS6039833A JP14660583A JP14660583A JPS6039833A JP S6039833 A JPS6039833 A JP S6039833A JP 14660583 A JP14660583 A JP 14660583A JP 14660583 A JP14660583 A JP 14660583A JP S6039833 A JPS6039833 A JP S6039833A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- etching
- gas
- plasma
- ta2o5
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 49
- 239000010409 thin film Substances 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000010408 film Substances 0.000 claims abstract description 12
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 10
- 239000011737 fluorine Substances 0.000 claims abstract description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 9
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000005684 electric field Effects 0.000 claims abstract description 5
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000007789 gas Substances 0.000 abstract 5
- 229910004546 TaF5 Inorganic materials 0.000 abstract 2
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical class F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 206010011732 Cyst Diseases 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 208000031513 cyst Diseases 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 238000005389 semiconductor device fabrication Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- -1 permanganese 17X'' Chemical compound 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000029305 taxis Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Insulating Materials (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14660583A JPS6039833A (ja) | 1983-08-12 | 1983-08-12 | Ta↓2O↓5薄膜のエツチング方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14660583A JPS6039833A (ja) | 1983-08-12 | 1983-08-12 | Ta↓2O↓5薄膜のエツチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6039833A true JPS6039833A (ja) | 1985-03-01 |
JPH0218577B2 JPH0218577B2 (de) | 1990-04-26 |
Family
ID=15411505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14660583A Granted JPS6039833A (ja) | 1983-08-12 | 1983-08-12 | Ta↓2O↓5薄膜のエツチング方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6039833A (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6260634U (de) * | 1985-09-30 | 1987-04-15 | ||
JPH0656144U (ja) * | 1993-01-08 | 1994-08-05 | 株式会社大林組 | コンクリート打設用トレミー管 |
-
1983
- 1983-08-12 JP JP14660583A patent/JPS6039833A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6260634U (de) * | 1985-09-30 | 1987-04-15 | ||
JPH0656144U (ja) * | 1993-01-08 | 1994-08-05 | 株式会社大林組 | コンクリート打設用トレミー管 |
Also Published As
Publication number | Publication date |
---|---|
JPH0218577B2 (de) | 1990-04-26 |
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