JPS6039165A - Activation of substance surface plating carrier material partially and directly - Google Patents

Activation of substance surface plating carrier material partially and directly

Info

Publication number
JPS6039165A
JPS6039165A JP14774884A JP14774884A JPS6039165A JP S6039165 A JPS6039165 A JP S6039165A JP 14774884 A JP14774884 A JP 14774884A JP 14774884 A JP14774884 A JP 14774884A JP S6039165 A JPS6039165 A JP S6039165A
Authority
JP
Japan
Prior art keywords
activation
organometallic
solvent
plating
carbon atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14774884A
Other languages
Japanese (ja)
Inventor
ウルリツヒ・フオン・ギジツキ
ゲルハルト・デイーター・ボルフ
キルコル・ジリニアン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bayer AG
Original Assignee
Bayer AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bayer AG filed Critical Bayer AG
Publication of JPS6039165A publication Critical patent/JPS6039165A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • C23C18/1607Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1608Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/20Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28Sensitising or activating
    • C23C18/30Activating or accelerating or sensitising with palladium or other noble metal
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/32Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/38Coating with copper
    • C23C18/40Coating with copper using reducing agents
    • C23C18/405Formaldehyde
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/42Coating with noble metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は直接部分的な無電源鍍金に使用できる坦体材料
の表面を、例えばプリント回路の基板アセンブリーをつ
くるために活性化する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for activating the surface of a carrier material which can be used for direct partial electroless plating, for example for producing printed circuit board assemblies.

この種の基板アセンブリーは多くの異った方法でつくる
ことができる。金属沈着物の種類に依存してこれらの種
々の方法として生温加法(semi−additive
 process) 、全添加法(fully add
itive process)、金属被覆添加法(me
tal resist process)または基質ド
添加法(substractive−additive
 pr。
This type of substrate assembly can be made in many different ways. Depending on the type of metal deposit, these various methods include semi-additive
process), fully add method
tive process), metal coating addition method (me
tal resist process) or substractive-additive method.
pr.

cess) 、及びいわゆる[多層膜法(s+ulti
layer technique)Jが使用される[ギ
ュンターーヘルマン(Guenther Her+ma
nn)著、「プリント回路板の製造法及び予備処理法(
Leitplatten Herstellung u
ndVorbehandlung) J、ドイツ、ザウ
ルガウ・つ゛ユルト(Saulgau Wuertt)
、オイゲン1ゲー111/7ツx (Eugen G、
 Lenze)出版社1978年発行、参照のこと]。
cess), and the so-called [multilayer film method (s+ulti
Layer technique) J is used [Guenther Hermann (Guenther Her+ma)
nn), “Printed circuit board manufacturing method and pretreatment method (
Leitplatten Herstellung u
ndVorbehandlung) J, Saulgau Wuertt, Germany
, Eugen 1 game 111/7x (Eugen G,
Lenze) Publishing Company, 1978, see here].

基質下線加法においては、坦体基板の両側に例えばスク
リーン争プリントψランカーまたは写真ラッカーで部分
的に被覆することにより銅箔に積層化し、酸化剤、例え
ばFeC11でエツチングしてう、カーのない部分の銅
を除去し、基板を水洗し、活性化溶液で活性化し、水洗
し増感した後、化学的鍍金浴中で全体の鍍金を行う。
In the substrate underlining method, the carrier substrate is laminated to a copper foil by partially coating both sides with e.g. After removing the copper and rinsing the substrate, activating it with an activating solution, rinsing and sensitizing it, the entire plate is plated in a chemical plating bath.

添加法は基板アセンブリーを直接つくりあげる方法であ
るが、この方法は次の操作工程から成っている。
The additive method, which directly creates a substrate assembly, consists of the following operational steps.

坦体な接着促進ラッカーで被覆し、う・ツカー被購をク
ロム硫酸でエツチングし、活性化溶液でラッカー被膜を
活性化し、基質表面を例えばスクリーン中プリントφラ
ッカーまたは写真ラッカーで被覆し、新しいラッカー被
膜を部分的に現像し、増感処理を行い、化学的にニッケ
ルまたは銅を鍵余し、電解により電気伝導性の金属沈着
物を厚くする。
Coating with a carrier adhesion-promoting lacquer, etching the substrate with chromium sulfate, activating the lacquer film with an activating solution, coating the substrate surface with, for example, a screen-in-print φ lacquer or a photographic lacquer, and applying a new lacquer. The coating is partially developed, sensitized, chemically exposed to nickel or copper, and electrolytically thickened with electrically conductive metal deposits.

ここで使用される活性化溶液は好ましくはイオ゛/性ま
たはコロイド状のパラジウム溶液であるか、または最近
では有機金属化合物の溶液または分散液である(オース
トリア特許第288,058号、ドイツ特許公開明細書
環2,451,217号及び第3,123.946号参
照)。
The activation solution used here is preferably an ionic or colloidal palladium solution or more recently a solution or dispersion of an organometallic compound (Austrian Patent No. 288,058, German Patent Publication No. (See Specification Ring No. 2,451,217 and No. 3,123.946).

基質の部分的鍍金に関する公知方法について一上記で述
べた簡単な説明から、これらの方法は非常に労力のかか
る方法であることが判る。さらにこれらの方法〒は通常
、LLI11程度の複雑な幾何学的構造をもつ所望の細
かい電気伝導性の通路をつくることはできず、基質材料
を不可逆的に劣化させる。
From the brief description given above of known methods for partial plating of substrates, it can be seen that these methods are very labor-intensive. Furthermore, these methods are typically unable to create the desired fine electrically conductive pathways with geometries as complex as LLI11 and irreversibly degrade the matrix material.

また水性の鍍金工程で捕捉される酸化剤、例えばクロム
酸イオンのために、活性化浴、1?感浴、及び鍍金浴は
不可逆的に被毒する。
Also, for oxidizing agents, such as chromate ions, which are trapped in the aqueous plating process, an activation bath, 1? Bathing and plating baths are irreversibly poisoned.

5− 従って本発明の目的は、上記の欠点を避け、とくに坦体
に対する通常の後処理または前処理、例えばマスクをか
ける工程、マスクを化学的または物理的に除去する工程
、或いはエツチングによりiル続的な金属沈着物を部分
的に除去する工程を必要としない部分的な金属沈着物を
有する坦体を提供することである。
5- It is therefore an object of the present invention to avoid the above-mentioned disadvantages and, in particular, to eliminate the conventional post- or pre-treatments of the carrier, such as applying a mask, removing the mask chemically or physically or by etching. The object of the present invention is to provide a carrier having partial metal deposits that does not require a subsequent partial removal process of the metal deposits.

本発明に従えば、この目的は活性化剤として有機溶媒の
中に均一・に分散した周期律表の第1及び第8副属の元
素の有機金属化合物を使用し、これを選択的にコントロ
ールされた噴霧ミスト転写法(spray−mist 
tracing process)、特に「インク拳ミ
スト法」または「インク嗜ジェット法」により基質表面
の一部に被覆することにより達成される。
According to the invention, this purpose is achieved by selectively controlling the use of organometallic compounds of elements of subgroups 1 and 8 of the periodic table uniformly dispersed in an organic solvent as activators. spray-mist transfer method
tracing process), in particular by coating a portion of the substrate surface by the "ink fist mist method" or the "ink jet method".

[インク争ジx ット転写法(ink jet tra
cing process) Jは一般に公知である。
[ink jet tra
cing process) J is generally known.

これは印刷インク法であり、印刷ヘッドを坦体表面に接
触させずに液滴をコントロールしながら坦体表面に噴霧
す6一 る方法である。このような方法は例えばシーメンス、ジ
ャーナシしくSiemens Journal)第4巻
、 1977年4月号、218〜221頁に記載されて
いる。
This is a printing ink method, in which droplets are controlled and sprayed onto the surface of the carrier without bringing the print head into contact with the surface of the carrier. Such methods are described, for example, in Siemens Journal, Volume 4, April 1977, pages 218-221.

この方υ:によればセルロースをペースにした記録材料
の1−に極めて迅速に情報を印刷することができる。
According to this method υ:, information can be printed extremely quickly on a cellulose-based recording material 1-.

印刷ノズルをコントロールするには主としてピエゾ電気
効果を使用し、これに付随して液滴の放出のトリガーに
する。この原理で操作される印刷へブドは例えばドイツ
公開特許第2,543,457号に記載されている。
Piezoelectric effects are primarily used to control the printing nozzle and concomitantly trigger the ejection of droplets. A printing press operating on this principle is described, for example, in DE 2,543,457.

ノズル及びそれの反対側に置かれた電極の間にかけられ
た信号電圧で印刷インクが加速されコントロールされる
「インク・ジェット法」とは対照的に、同様に公知の「
インク・ミスト法」においては超音波振動によりインク
のミストをつくる。
In contrast to the "ink jet method" in which the printing ink is accelerated and controlled by a signal voltage applied between a nozzle and an electrode placed opposite it, the similarly known "ink jet method"
In the ``ink mist method,'' an ink mist is created using ultrasonic vibrations.

X質表面の無電流鍍金に使用される有機金属化合物の活
性化剤も一般に公知である(、l:記のオーストリア特
許第288,058号及びドイツ特許公開明細書第2,
451,217号の他に、ドイツ特許公開明細書第3,
025,307号、第3,148,280号及び第3,
150゜885号参照)。
Activators for organometallic compounds used in currentless plating of X-type surfaces are also generally known (Austrian Patent No. 288,058 and German Patent Application No.
In addition to No. 451,217, German Patent Publication No. 3,
No. 025,307, No. 3,148,280 and No. 3,
150°885).

これらの化合物は金属キレート錯体、金属と結合するの
に必要な基の他に少なくとも一つの他の官能基をもった
有機金属π錯体(化合物)、及び有機金属化合物のオリ
ゴマー、重合体、及び予備重合体である。
These compounds include metal chelate complexes, organometallic π complexes (compounds) that have at least one other functional group in addition to the groups necessary to bind the metal, and oligomers, polymers, and preliminaries of organometallic compounds. It is a polymer.

Pd、 Au、 Pt、及びAgの有機金属π錯体が好
適である。その例としてはブタジェンー二塩化パラジウ
ム、イソプレンー二塩化パラジウム及びベンゾニI・リ
ルー二塩化パラジウムがある。
Organometallic π complexes of Pd, Au, Pt, and Ag are preferred. Examples are butadiene-palladium dichloride, isoprene-palladium dichloride and benzoni I. liru dichloride palladium.

特に好適なものは酸化度が1〜4の周期律表の第1及び
第8副属の元素(特に1価のパラジウム)と、式 但しR,及びR4は炭素数1〜20のアルキル、好まし
くは炭素数1〜6のアルキルであり、R2及びR3は水
素又は炭素数1〜4のアルキル、好ましくはメチルであ
る。
Particularly preferred are elements of the 1st and 8th subgroups of the periodic table with an oxidation degree of 1 to 4 (especially monovalent palladium), and a formula in which R and R4 are alkyl having 1 to 20 carbon atoms, preferably is alkyl having 1 to 6 carbon atoms, and R2 and R3 are hydrogen or alkyl having 1 to 4 carbon atoms, preferably methyl.

の不飽和ケトンとの同様に一部公知の、或いは公知方法
で製造し得る錯体である。
These complexes with unsaturated ketones are also partially known or can be produced by known methods.

その例としては酸化メシチル、n−ブドー3−エン−2
−オン、n−ヘプト−3−エン−2−オン、n−へキス
−3−エン−2−オン、n−デク−4−エン−3−オン
、5−クロロベント−3−エン−2−オン、エチルビニ
ルケトン、3−メチルオクト−5−エン−4−オン、3
−メチルベント−3−エン−2−オン、及び7−メドキ
シヘプトー3−エン−2−オンである。
Examples include mesityl oxide, n-budo-3-ene-2
-one, n-hept-3-en-2-one, n-hex-3-en-2-one, n-dec-4-en-3-one, 5-chlorobent-3-en-2 -one, ethyl vinyl ketone, 3-methyloct-5-en-4-one, 3
-methylbent-3-en-2-one, and 7-medoxyheptot-3-en-2-one.

これらの化合物から誘導される錯体は貯蔵安定性が高い
特徴をもっている。
Complexes derived from these compounds are characterized by high storage stability.

活性化剤を均一に分散させるのに適した有機溶媒は塩化
メチレン、クロロフォルム、酸化メシチル、トリクロエ
チレン、 1.1.11リクロロエタン、アセトン、メ
タノール、エタノール、ブタノール、エチレングリコー
ル及びこれらの溶媒と能の溶媒との混合物である。
Suitable organic solvents for uniformly dispersing the activator include methylene chloride, chloroform, mesityl oxide, trichlorethylene, dichloroethane, acetone, methanol, ethanol, butanol, ethylene glycol, and the like. It is a mixture with a solvent.

9− 鍍金するプラスチックスの表面を部分的に汚染または部
分的に膨潤させる溶媒又は溶媒混合物は、金属沈着物と
坦体表面との接着を増加させるために、本発明方法を実
施するのに特に好適に使用される。
9- Solvents or solvent mixtures which partially contaminate or partially swell the surface of the plastics to be plated are particularly suitable for carrying out the method of the invention in order to increase the adhesion of the metal deposit to the carrier surface. Preferably used.

この点に関し、溶媒及びそれと沈澱剤との配合物は、例
えば米国ニューヨーク、ジョン・ウィリー・アンド拳す
ンズ(John Wiley and 5ons)社1
974年発行、ジェー・會ブランドラップ(j、 Br
undrup)及びイーΦエイチ・インナーガツト(E
、 H,Innergut)著、「ポリで−11ハンド
ブツク(PolymerHandbook)Jに記載さ
れている。
In this regard, solvents and their combinations with precipitants are available from, for example, John Wiley and 5ons, New York, USA.
Published in 974, J-kai brand wrap (j, Br
undrup) and EΦH inner gut (E
, H. Innergut), "Polymer Handbook J.

しかし本発明を限定することなく本発明方法をL業的規
模で実施する場合には、次の条件を保持することが推奨
される。
However, without limiting the invention, when carrying out the method of the invention on a commercial scale, it is recommended that the following conditions be maintained.

1、溶媒は活性化剤を化学的にも物理的にも非’t+’
f 逆的に劣化させてはいけない。
1. The solvent is chemically and physically non-'t+' to the activator.
f It must not be adversely deteriorated.

ii、溶媒は活性化剤の凝固を起したり分離(dewi
xing)を起したりしてはいけない。
ii. The solvent may cause coagulation or separation of the activator.
xing).

10− iii 、溶媒は使用する坦体を完全に溶解したりエン
チングしたりしてはいけない。
10-iii. The solvent must not completely dissolve or etch the carrier used.

iv、溶媒は余分な後処理、例えば紫外線照射または真
空処理をすることなく蒸発可能でなければならない。
iv. The solvent must be able to evaporate without extra post-treatment, such as UV irradiation or vacuum treatment.

マ、 所望の粘度範囲またはレオロジー的性質を賦すす
るためには、勿論有機重合体及びラテックス及び/又は
有機または無機の濃化剤を活性化剤−m液に加えること
ができる。#機溶液に固有粘度、チキントロピー及びグ
イラタンシーまたはニュートン瀉に関する性質を賦与す
るこのような楕加剤は一般に公知である[ウルマン(U
llman)、2 、80; to、?+5.740;
及び17.107.192参照]。これらの汗加剤を選
択する場合、装置の操作条件(印刷速度、剪断応力及び
ノズルの中の剪断力または剪断速度)及び活性化溶液の
化学的及び物理的性質(例えば粘度、沸点及び膨潤性)
を考慮しなければならない。
Of course, organic polymers and latexes and/or organic or inorganic thickeners can be added to the activator-m liquid in order to impart the desired viscosity range or rheological properties. #Such elliptical additives which impart properties relating to intrinsic viscosity, chicktropy and giratancy or Newtonian filtration to the liquid solution are generally known [Ullmann (Ullmann et al.
llman), 2, 80; to,? +5.740;
and 17.107.192]. When selecting these sweat additives, the operating conditions of the equipment (printing speed, shear stress and shear force or shear rate in the nozzle) and the chemical and physical properties of the activating solution (e.g. viscosity, boiling point and swelling properties) )
must be taken into consideration.

vl、活性化剤溶液は0.3〜100cpの粘度をもっ
ていなければならない。
vl, the activator solution must have a viscosity of 0.3 to 100 cp.

本発明の新規方法は一般に次のようにして行われる。The novel method of the present invention is generally carried out as follows.

周期律表の第1及び第8副属の元素、特にCu、Ag、
 Au、Pd、及びptの有機金属化合物を有機溶媒に
溶解する。有機金属化合物の濃度は!fL当り(使用し
た金属に関し)0.01〜100g、好ましくは0.1
〜10.0g 、特に好ましくは0.1〜2.5gテあ
る。
Elements of the 1st and 8th subgroups of the periodic table, especially Cu, Ag,
Organometallic compounds of Au, Pd, and pt are dissolved in an organic solvent. What is the concentration of organometallic compounds? 0.01 to 100 g per fL (regarding the metal used), preferably 0.1
~10.0g, particularly preferably 0.1~2.5g.

活性化剤溶液を液滴の形で、例えば温度10〜40℃に
おいて、「イ二/り争ジェ・シト法]または「インク・
ミスト法」により坦体に噴霧した後、乾燥する。
The activator solution is applied in the form of droplets, e.g.
After spraying onto a carrier using the "mist method", it is dried.

本発明方法に適した坦体の例としては紙、ポリエチ1/
ン、ポリプロピレン、ABSプラスチックヌ、エポキシ
樹脂、ポリアミドプラスチックス、ポリエステルプラス
チックス、ポリアクリロニトリルプラスチックス、スチ
レン中ブタジェン共重合体、アミド/イミド共縮合体、
ポリヒダントイン、及びこれらの?#醍体の混合物また
は共重合体である。
Examples of carriers suitable for the method of the invention include paper, polyethylene 1/
polypropylene, ABS plastics, epoxy resins, polyamide plastics, polyester plastics, polyacrylonitrile plastics, butadiene in styrene copolymer, amide/imide cocondensate,
Polyhydantoin, and these? # It is a mixture or copolymer of solids.

このように部分的に活性化した坦体を次に還元して増感
しなければならない。このためには電気化学丁業におけ
る通常の還元剤、例えば水和ヒドラジン、フォルl、ア
ルデヒド、ハイポ亜燐酸またはポランを使用することが
好ましい。 ゛このようにして活性化した表面は直接無
電流鍍金に使用することができる。しかし、水洗により
表面から還元剤の残渣を除去する必要がある。
The partially activated carrier must then be reduced and sensitized. For this purpose, it is preferable to use the reducing agents customary in electrochemistry, such as hydrated hydrazine, phorol, aldehydes, hypophosphorous acid or poranes. ``The surface activated in this way can be used directly for currentless plating. However, it is necessary to remove the reducing agent residue from the surface by washing with water.

特に好適な本発明の具体化例においては、鍍金浴中での
増感は無電流鍍金の還元剤を用いて実施する。この特に
好適な具体化例によれば、これまでは不可能であった部
分的な鍍金の簡単化が行われる。この特に簡単な具体化
例は、坦体の一部の直接活性化、溶媒の蒸発、及び活性
化された表面の鍍金浴への浸漬の三つの操作から成るに
過ぎない。
In a particularly preferred embodiment of the invention, sensitization in the plating bath is carried out using a reducing agent for currentless plating. This particularly preferred embodiment simplifies partial plating, which was not possible heretofore. This particularly simple embodiment consists of only three operations: direct activation of a part of the carrier, evaporation of the solvent and immersion of the activated surface in a plating bath.

この具体化例はアミノポランを含むニッケル13− 浴5 フォルマリンを含む銅浴または化学的な金の浴に
特に適している。
This embodiment is particularly suitable for nickel-13 baths containing aminoporane, copper baths containing formalin, or chemical gold baths.

本発明方法に使用できる好適な鍍金浴はXi、Go、 
Cu、 Au、またはAg塩またはそれらの混合物を含
む浴である。このような鍍金浴は無電流鍍金法において
公知である。必要に応じこのような金属沈着物は化学的
方法又は電解法で所望の厚さまで増加させることができ
る。
Suitable plating baths that can be used in the method of the present invention include Xi, Go,
A bath containing Cu, Au, or Ag salts or a mixture thereof. Such plating baths are known in currentless plating processes. If desired, such metal deposits can be increased to the desired thickness by chemical or electrolytic methods.

本発明でつくられた製品は多くの用途をもっており1例
えばプリント回路(プリント電気回路基板アセンブリー
)、金属光沢なもつ材料(装飾用)、静電的に或いは電
磁波から遮蔽するプラスチックスからつくられた坦体、
識別用カード、磁気的に情報を運搬または記録及び格納
する材料、パルサー及びクロック装置、プリント後所望
の期間後にC部分的活性化)鍍金により秘匿された情報
を顕在化する材料、及び金属光沢をもつ文字、線等が描
かれた紙またはプラスチックスでつくられた坦体の製造
に使用される。下記の実施例によ14− り本発明を例示する。これらの実施例は中に例示のため
のものであり、特許請求の範囲記載の事項以外本発明を
駆足するものではない。
Products made according to the invention have many uses, such as printed circuits (printed electrical circuit board assemblies), metallic luster materials (decorative), and plastics made of electrostatically or electromagnetic shielding. carrier,
Identification cards, materials that magnetically carry or record and store information, pulsers and clock devices, materials that reveal hidden information by plating (partially activated after a desired period of time after printing), and materials with metallic luster. Used to manufacture carriers made of paper or plastics with characters, lines, etc. drawn on them. The invention is illustrated by the following examples. These Examples are for illustrative purposes only, and do not constitute the scope of the present invention other than the matters described in the claims.

実施例1 大きさ2]OX300mm 、厚さO,ItamのAB
S7(ルl、な、0.75gの塩化4−シクロヘキセン
−1,2−ジカルホン酸パラジウム(II)、8001
のエタノール及び50m lのトリクロロエタンからつ
くられた活性化溶前を使用して通常の[インク・ジェッ
ト法」 で部分的に活性化し、フィルムを室温で1分間
乾燥し、次いで3.Ogのジメチルアミノポラン、30
gのNiCl2 と10gのクエン酸とを1文中に含み
濃アンモニア溶液でpHを8.2にされた化学的Ni浴
中で20分間無電流ニッケル信金(currentle
ss nickeling)をする。部分的に鍍金され
たフィルムが得られた。金属光波をもつN1沈着物の被
膜の厚さは約0.2 p−mであった。
Example 1 Size 2] AB of OX300mm, thickness O, Itam
S7 (lu, na, 0.75 g palladium(II) 4-cyclohexene-1,2-dicarphonate chloride, 8001
The film was partially activated using a conventional "ink jet method" using an activation solution made from 1.5 ml of ethanol and 50 ml of trichloroethane, the film was dried for 1 minute at room temperature, and then 3. Og dimethylaminoporan, 30
NiCl2 and 10 g of citric acid for 20 minutes in a chemical Ni bath with a concentrated ammonia solution to a pH of 8.2.
ss nickeling). A partially plated film was obtained. The coating thickness of the N1 deposit with metallic light waves was approximately 0.2 p-m.

実施例2 大きさ210 X300mm 、厚さ0 、05mm(
7) セ)Iy O−ス繊維からつくられたカードを、
0.5gのブタシエン二用化ハラジウム、500m l
のシクロ八、キサノー1し、200m lのエチレング
リコール、及び50m1の酸化メシチルからつくられた
活性化溶液を用いて通常の「インク・ミスi・法」によ
り部分的に活性化し、このカードを室温で5分間乾燥し
、4.0gのジメチルアミノポランを11中に含む水性
還元浴中で3分間増感し、次いで通常の化学的銅浴[例
えばドイツ、ゾーリンゲン(Solingen) 58
50、フリードリーヒ・ブラスベルグ(Friedli
ch Blasberg)社製]中で銅鍍金する。僅か
15分後に試験試料は部分的に調法着物で被覆された。
Example 2 Size: 210 x 300 mm, thickness: 0, 05 mm (
7) Card made from Iy O-ce fiber,
0.5g butadiene dihaladium, 500ml
The card was partially activated by the conventional "Ink Miss I method" using an activation solution made from 1 cyclo8, 1 xanol, 200 ml ethylene glycol, and 50 ml mesityl oxide, and the card was kept at room temperature. for 5 minutes, sensitized for 3 minutes in an aqueous reducing bath containing 4.0 g of dimethylaminoporan in 11, followed by a conventional chemical copper bath [e.g. Solingen, Germany 58
50, Friedli Blasberg
Copper plating is carried out in a commercially available commercially available commercially available commercially available commercially available commercial product. After only 15 minutes, the test specimen was partially covered with the dressing.

約25分後。About 25 minutes later.

この化学的な銅の沈着物のモ均の厚さは約0.2用m、
幅は約75g、mになった。化学的な鍍金浴から試験試
料を取り出し、蒸留水で水洗した後、銅電解浴中で電流
密度0.8 /drn’において30分間電解し沈着物
の厚さを約6.6 μmに増加せた。
The average thickness of this chemical copper deposit is approximately 0.2 m,
The width is approximately 75g, m. The test sample was removed from the chemical plating bath, washed with distilled water, and then electrolyzed in a copper electrolytic bath at a current density of 0.8/drn' for 30 minutes to increase the thickness of the deposit to approximately 6.6 μm. Ta.

実施例3 300 X 20mmの矩形のポリエステルフィルムを
実施例1に従って活性化し、溶媒をへ発させた後、15
分間ニッケル鍍金した。
Example 3 A 300 x 20 mm rectangular polyester film was activated according to Example 1 and, after evaporation of the solvent, 15
Nickel plated for minutes.

部分的に鍍金されたフィルムが得られた。金属光沢をも
つN1沈着物の被膜の厚さは約0.2 pLmであった
A partially plated film was obtained. The coating thickness of the N1 deposit with metallic luster was approximately 0.2 pLm.

実施例4 ガラス繊維で補強された100 X 100 mmの正
方形のポリアミドフィルムを、1交の1.1.1−1−
リクロロエタンの中に0.6gのアセトニトリルニ塩化
パラジウムを含む溶液で「インクΦミスト法jにより部
分的に活性化し1次いで実施例1の無電流鍍金を行った
。僅か30秒後にシートの表面は部分的に黒色に変り始
め、3分後には細かいNiの沈着物で部分的に被覆され
た。約15分後、化学的につくられたNi沈着物の厚さ
は約Q、2 p、m 1幅約25pmになった。n−ヘ
プト−3−エノンのパラジウム−r−錯体を使用しても
同様な結果が得られる。
Example 4 A 100 x 100 mm square polyamide film reinforced with glass fibers was cut into a 1.1.1-1-
A solution containing 0.6 g of acetonitrile palladium dichloride in dichloroethane was partially activated by the ink Φ mist method, and then currentless plating was performed as in Example 1. After only 30 seconds, the surface of the sheet was It started to partially turn black and after 3 minutes it was partially covered with fine Ni deposits. After about 15 minutes, the thickness of the chemically created Ni deposits was about Q,2 p,m. Similar results are obtained using palladium-r-complex of n-hept-3-enone.

実施例5 ガラス繊維で補強された200 X 200龍の正方形
17− のポリエステルフィルムを、0.9gのイソプレン−1
p化パラジウJ・、2gの陽イオン性ボリウ1/タン・
ラテツクス、200m1のメタノール、及び400m1
 の塩化メチレンから成り粘度が5.Ocpの溶液を使
用して実施例2に従って活性化し、フィルムを乾燥し、
増感した後25分間銅鍍金した。
Example 5 A 200 x 200 dragon square 17-square polyester film reinforced with glass fibers was coated with 0.9 g of isoprene-1.
2 g of cationic boron 1/tan.
latex, 200ml methanol, and 400ml
It consists of methylene chloride with a viscosity of 5. Activate according to Example 2 using a solution of Ocp, dry the film,
After sensitization, copper plating was performed for 25 minutes.

部分的に鍍金されたプラスチ・ンクス成分が得られたが
、これを通常の電解金鍍金浴[例えばドイツ、ゾーリン
ゲy(Solingen) 5850、フリードリー/
 ヒ”ブラスベルグ(Friedlich Blasb
erg)社製]中で全鍍金17、約40gmの厚さの全
鍍金を得た。
A partially plated plastinx component was obtained which was processed in a conventional electrolytic gold plating bath [e.g.
Friedlich Blasb
Full plating 17 with a thickness of about 40 gm was obtained.

実施例6 実施例4のへブタノン錯体は次のようにしてつくられ払
Example 6 The hebutanone complex of Example 4 was prepared as follows.

15重借%のPdを含むNa2 PdC:Itの水溶液
6gを20gの新しく薪留したn−ヘプト−3−エン−
2−オンに110℃において15分に亙り滴下し、上記
温度でこの混合物を25分間攪拌した後、0℃に冷却す
る。
6 g of an aqueous solution of Na2PdC:It containing 15% Pd was mixed with 20 g of freshly wood-fired n-hept-3-ene-
2-one over a period of 15 minutes at 110 DEG C., the mixture is stirred at this temperature for 25 minutes and then cooled to 0 DEG C.

−18= 2時間後、竹色の沈澱を吸引濾過し、75m1の蒸留水
で3回洗炸した後、精製した冷エタノール50m1で2
回洗浄し、乾燥し、トルエン/トリクロロエチレン(1
:1)から再結晶し、乾燥器中で一晩真空乾燥する。分
解点188℃の桃黄色の結晶固体を92%の収率で得た
-18 = After 2 hours, the bamboo-colored precipitate was suction filtered, washed three times with 75 ml of distilled water, and then washed with 50 ml of cold purified ethanol.
Washed twice, dried, toluene/trichloroethylene (1
: Recrystallize from 1) and vacuum dry in a dryer overnight. A pink-yellow crystalline solid with a decomposition point of 188° C. was obtained in a yield of 92%.

特許出願人 バイエル舎アクチェンゲゼルシャ19− 438−Patent applicant: Bayer Akchengezersha 19- 438-

Claims (1)

【特許請求の範囲】 1、有機溶媒の中に均・に分布させた周期律表の第1及
び第8副属の元素の有機金属化合物を使用し、坦体材料
を部分的に直接無電法鍍金するため基質表面を活性化す
る方法であって、これらの化合物を選択的にコントロー
ルされた噴霧ミスト転写法、特に「インク拳ミスト法」
または「インク拳ジェット法」により適用することを特
徴とする方法。 2、処理した基質を溶媒から取り出した後、心安に応じ
増感を施した後、直接無電疏鍍金浴に導入する特許請求
の範囲第1項記載の方法。 3、Au、 Ag、 Pd、 Pt、及びCuノ有機金
属π化合物または+Lメート錯体を用いて活性化を行な
う特許請求の範囲第1項記載の方法。 −1= 4、有機金属化合物は金属を結合するのに必要な基の他
に少なくとも一つの他の官能基を有する特許請求の範囲
第1項記載の方法。 5、式 但しR1及びR4は炭素数1〜20のアルキル、好まし
くは炭素数1〜8のアルキルであり、R2及びR3は水
素又は炭素数1〜4のアルキル、好ましくはメチルであ
る、 の不飽和ケトンの錯体化合物を用いて活性化を行う特許
請求の範囲第1記載の方法。 6、ブドー3−エン−2−オンのパラジウム−I−M体
を用いて活性化を行う特許請求の範囲第1記載の方法。 7、有機金属化合物は0.1〜IO0,0g/]の廣(
使用した金属に関し)で溶媒に溶解または分散している
特許請求の範囲第1項記載の方法。 8、化学的鍍金浴としてCu、 Ni、 C(1,Al
lまたほそ−2= れらの混合物を使用する特許請求の範囲第1項記載の方
法。 9、プリント回路基板アセンブリーの製造に使用する特
許請求の範囲第1項記載の方法。
[Claims] 1. Using organometallic compounds of elements of the 1st and 8th subgroups of the periodic table evenly distributed in an organic solvent, the carrier material is partially directly electroless processed. A method of activating the substrate surface for plating, which selectively controls the transfer of these compounds using a spray mist transfer method, especially the "ink fist mist method".
Or a method characterized in that it is applied by the "ink fist jet method." 2. The method according to claim 1, wherein the treated substrate is removed from the solvent, sensitized as required, and then directly introduced into an electroless plating bath. 3. The method according to claim 1, wherein the activation is performed using an organometallic π compound of Au, Ag, Pd, Pt, and Cu or a +L mate complex. -1=4, the method according to claim 1, wherein the organometallic compound has at least one other functional group in addition to the group necessary for binding the metal. 5. Formula where R1 and R4 are alkyl having 1 to 20 carbon atoms, preferably alkyl having 1 to 8 carbon atoms, and R2 and R3 are hydrogen or alkyl having 1 to 4 carbon atoms, preferably methyl. The method according to claim 1, wherein the activation is performed using a complex compound of a saturated ketone. 6. The method according to claim 1, wherein the activation is carried out using palladium-IM form of boudo-3-en-2-one. 7. Organometallic compounds have a range of 0.1 to IO0.0 g/] (
2. The method according to claim 1, wherein the metal used is dissolved or dispersed in a solvent. 8. Cu, Ni, C (1, Al
1 or 2= The method according to claim 1, wherein a mixture thereof is used. 9. A method according to claim 1 for use in manufacturing a printed circuit board assembly.
JP14774884A 1983-07-22 1984-07-18 Activation of substance surface plating carrier material partially and directly Pending JPS6039165A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19833326508 DE3326508A1 (en) 1983-07-22 1983-07-22 METHOD FOR ACTIVATING SUBSTRATE SURFACES FOR THE DIRECT PARTIAL METALIZATION OF CARRIER MATERIALS
DE3326508.9 1983-07-22

Publications (1)

Publication Number Publication Date
JPS6039165A true JPS6039165A (en) 1985-02-28

Family

ID=6204690

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14774884A Pending JPS6039165A (en) 1983-07-22 1984-07-18 Activation of substance surface plating carrier material partially and directly

Country Status (3)

Country Link
EP (1) EP0132677A1 (en)
JP (1) JPS6039165A (en)
DE (1) DE3326508A1 (en)

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US4668533A (en) * 1985-05-10 1987-05-26 E. I. Du Pont De Nemours And Company Ink jet printing of printed circuit boards
DE3667800D1 (en) * 1985-08-23 1990-02-01 Ciba Geigy Ag MIXTURE OF OLEFIN AND DIBENZALACETONE-PALLADIUM COMPLEX AND THEIR USE.
DE3760813D1 (en) * 1986-01-30 1989-11-23 Ciba Geigy Ag Polymeric compositions containing a dissolved dibenzal acetone palladium complex
GB8703664D0 (en) * 1987-02-17 1987-03-25 Green A Electroless silver plating composition
DK648187D0 (en) * 1987-12-09 1987-12-09 Linkease Test Systems A S METHOD AND APPARATUS FOR CIRCUIT MANUFACTURING
US5227223A (en) * 1989-12-21 1993-07-13 Monsanto Company Fabricating metal articles from printed images
DE4035080A1 (en) * 1990-11-05 1992-05-07 Abb Patent Gmbh METHOD AND DEVICE FOR PRODUCING PARTIAL METAL LAYERS
GB2360489A (en) 2000-03-23 2001-09-26 Seiko Epson Corp Deposition of soluble materials
IL159175A0 (en) * 2001-06-04 2004-06-01 Qinetiq Ltd Patterning method
GB0113408D0 (en) * 2001-06-04 2001-07-25 Secr Defence Autocatalytic coating method
GB2391871A (en) * 2002-08-16 2004-02-18 Qinetiq Ltd Depositing conductive solid materials using reservoirs in a printhead
US20060134318A1 (en) * 2003-01-28 2006-06-22 Alan Hudd Method of forming a conductive metal region on a substrate
EP1687461A2 (en) * 2003-10-29 2006-08-09 Conductive Inkjet Technology Limited The formation of layers on substrates
DE102005006995B4 (en) * 2005-02-15 2008-01-24 Infineon Technologies Ag Semiconductor device with plastic housing and external connections and method for producing the same

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Publication number Priority date Publication date Assignee Title
DE2253944C2 (en) * 1972-11-03 1983-02-24 Agfa-Gevaert Ag, 5090 Leverkusen Method for producing a relief image
DE2451217C2 (en) * 1974-10-29 1982-12-23 Basf Ag, 6700 Ludwigshafen Activation of substrates for electroless metallization
CH616178A5 (en) * 1976-03-30 1980-03-14 Electroplating Eng Plating appliance for thin plates, foils or similar sheet-like material.
DE2731894C3 (en) * 1977-07-14 1980-07-17 Roland 8702 Veitshoechheim Kraus Paint application process and device for carrying out the process
FI783935A (en) * 1978-12-20 1980-06-21 Outokumpu Oy REFERENCE FITTING WITH METAL AV ETT MATERIAL SOM ICKE LEDER ELEKTRICITET
DE3148280A1 (en) * 1981-12-05 1983-06-09 Bayer Ag, 5090 Leverkusen METHOD FOR ACTIVATING SUBSTRATE SURFACES FOR ELECTRIC METALLIZATION

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EP0132677A1 (en) 1985-02-13

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