JPS6037804A - Local oscillating circuit - Google Patents

Local oscillating circuit

Info

Publication number
JPS6037804A
JPS6037804A JP14508383A JP14508383A JPS6037804A JP S6037804 A JPS6037804 A JP S6037804A JP 14508383 A JP14508383 A JP 14508383A JP 14508383 A JP14508383 A JP 14508383A JP S6037804 A JPS6037804 A JP S6037804A
Authority
JP
Japan
Prior art keywords
diode
changeover switch
potential
varactor diode
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14508383A
Other languages
Japanese (ja)
Inventor
Yoshio Fukutome
福留 義夫
Akira Usui
晶 臼井
Kazuhiko Kubo
一彦 久保
Hiroyuki Nagai
裕之 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14508383A priority Critical patent/JPS6037804A/en
Publication of JPS6037804A publication Critical patent/JPS6037804A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1841Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
    • H03B5/1847Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device

Landscapes

  • Circuits Of Receivers In General (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

PURPOSE:To increase the overlapping of the frequency at switching by using a varactor diode in place of a switching diode so as to expand the frequency variable range and attaining the switching through the use of the varactor diode used in the forward direction. CONSTITUTION:A resonator block C is connected with an amplifier block D by a coupling capacitor C1, and a tuning voltage BT is applied to a connecting point between the capacitor C1 and the varactor diode D1 through a high resistance resistor R1. One end of a resonance line L1 is connected to an anode of the diode D1, the other end of the line L1 is grounded through a high resistance value resistor R2 and connected to the anode of the varactor diode D2' through a coupling capacitor C2. A changeover switch S1 is connected to the connecting point between the capacitor C2 and the diode D2', and a bias potential Bs through a high resistance resistor R9 and a ground potential through a high resistance resistor R10 are given switchingly to the connecting point by the switch S1. A changeover switch S2 is connected to the connecting point between the diode D2 and a capacitor C8, and a ground potential and a voltage BT through a high resistance resistor R7 are given switchingly to the connecting point by the switch S2.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、ヘテロゲイン方式を使用したシステムにおけ
る広帯域の局部発振回路に関するものであシ、例えばテ
レビジョンチューナ回路、 SHF JT−1ダウンコ
ンバ一タ回路に用いるものである。
Detailed Description of the Invention (Industrial Application Field) The present invention relates to a wideband local oscillation circuit in a system using a hetero gain method, such as a television tuner circuit, SHF JT-1 down converter circuit, etc. It is used in circuits.

(従来例の構成とその問題点) 分布定数回路における線路インピーダンスZinは、特
性インピーダンスをZ。、線路の終端インピーダンスを
Z、線路長をtとすれば 2π となる。但し、β=下()、 :波長) ・・・・−・
(2)(1)式において21え一〇としたときZln−
jZo−βt ・・・・・・・・・・(3)とな9、こ
れを2゜で規格した特性は、第1図のよλ λ λ うになり、0から−の間で誘導性、1から百の間で容量
性、・・・、のような変化をする。この線路のλ 0から−の間を利用し、これに容量を与えて共振回路を
構成することができる。
(Configuration of conventional example and its problems) Line impedance Zin in a distributed constant circuit has characteristic impedance Z. , if the terminal impedance of the line is Z and the line length is t, then it becomes 2π. However, β = lower (), :wavelength) ・・・・−・
(2) In equation (1), when 21e10, Zln-
jZo−βt ・・・・・・・・・・・・(3) 9 The characteristic when normalized at 2° is λ λ λ as shown in Fig. 1, and it is inductive between 0 and -. It changes like capacitance between 1 and 100. A resonant circuit can be constructed by using the line between λ 0 and - and adding a capacitance to it.

第2図はこのような共振回路を利用した局部発振回路の
従来例を示す。すなわち、この局部発振回路は上述の共
振回路を増幅器に接続して反射型の発振器を構成したも
ので、図においてAは共振体部ブロック、Bは増幅器ブ
ロックを示し、図示のように共振体部ブロックAは増幅
器ブロックBに結合容量C1を介して接続される。D、
は第1の外部直流電位(以下同調電位という)B、によ
多容量を可変できる同調ダイオード(以下バラクタダイ
オードという)、D2は第2の外部直流電位(以下バイ
アス電位という)B8によシ導通、非導通を切り換える
ことのできるスイッチダイオード、Llは共振線路で一
端がバラクタダイオードD1のアノードに接続され他端
は結合容量C2を介してスイッチダイオードD2に接続
されると共に、高抵抗R2を通して接地される。結合容
量C2とスイッチダイオードD の接続点は高抵抗R5
を通してバイアス電圧B8が与えられる。共振は共振線
路L1とバラクタダイオードD1の容量CD1と回路の
浮遊容量C7及びスイッチングダイオードD2の容量C
D2、スイッチングダイオードD2に並列に接続された
容量CfDの合成容量とで構成される。この合成容量を
Cとすれば共振点において j「= Zotanl?l −・・・・・−・・(4)
の関係があυ、第2図の回路はこのω。で発振する。
FIG. 2 shows a conventional example of a local oscillation circuit using such a resonant circuit. That is, this local oscillation circuit is a reflection type oscillator constructed by connecting the above-mentioned resonant circuit to an amplifier. In the figure, A indicates a resonator block, B indicates an amplifier block, and the resonator block Block A is connected to amplifier block B via a coupling capacitor C1. D.
is a first external DC potential (hereinafter referred to as a tuning potential) B, a tuning diode (hereinafter referred to as a varactor diode) whose capacitance can be varied, and D2 is conductive to a second external DC potential (hereinafter referred to as a bias potential) B8. , a switch diode capable of switching non-conduction, Ll is a resonant line, one end of which is connected to the anode of the varactor diode D1, the other end of which is connected to the switch diode D2 via a coupling capacitance C2, and is grounded through a high resistance R2. Ru. The connection point between the coupling capacitance C2 and the switch diode D is a high resistance R5.
Bias voltage B8 is applied through. Resonance is caused by the resonance line L1, the capacitance CD1 of the varactor diode D1, the stray capacitance C7 of the circuit, and the capacitance C of the switching diode D2.
D2 and a combined capacitor of a capacitor CfD connected in parallel to the switching diode D2. If this combined capacitance is C, then at the resonance point j' = Zotanl?l -...... - (4)
There is a relationship υ, and the circuit in Figure 2 has this ω. oscillates.

共振体部ブロックAにおいて、スイッチダイオードD2
が導通しだときには、共振体は結合容量C2を通して直
接接地された形となり、容量CfDの影響はほとんどな
い。故に、共振容量はバラクタダイオードD1の同調容
量CD1と結合容量C11C2と増幅器プロ、りBを含
めた浮遊容量Cfとの和になるが、結合容量C1,C2
は同調容量CD、に対して大きな値を用いるため実質上
の合成容量C6はco= cD1+ c(=−・・(5
)となる。
In the resonator block A, the switch diode D2
When is conductive, the resonator is directly grounded through the coupling capacitor C2, and the influence of the capacitor CfD is almost negligible. Therefore, the resonant capacitance is the sum of the tuning capacitance CD1 of the varactor diode D1, the coupling capacitance C11C2, and the stray capacitance Cf including the amplifier pro-B, but the coupling capacitances C1 and C2
uses a large value for the tuning capacitance CD, so the effective combined capacitance C6 is co= cD1+ c(=-...(5
).

一方、スイッチダイオードD2が非導通になると、スイ
ッチダイオードD2は容量CfDを通して接地され、容
量CfDは結合容量C1,C2に対して極めて小さいた
め無視できず合成容量C8は となる。
On the other hand, when the switch diode D2 becomes non-conductive, the switch diode D2 is grounded through the capacitance CfD, and since the capacitance CfD is extremely small compared to the combined capacitances C1 and C2, it cannot be ignored and the combined capacitance C8 becomes.

ここでCfD二1 pF 、 Cf=0.5pFCD1
= 0.7 pF〜6 pFにすれば、(5)式のC8
の可変範囲は、1.2 pF〜6.5pFとなり、共振
線路をインピーダンス5oΩ、線路長142mmとする
と周波数可変範囲は900 MHz 〜1750 MH
zとなる。
Here CfD21 pF, Cf=0.5pFCD1
= 0.7 pF to 6 pF, C8 in equation (5)
The variable range is 1.2 pF to 6.5 pF, and if the resonant line has an impedance of 5oΩ and a line length of 142 mm, the frequency variable range is 900 MHz to 1750 MHz.
It becomes z.

(6)式の場合はC8の変化は0.9 ]、 pF〜1
.35pFになシ、1700 MHz 〜1900 M
Hzの周波数可変範囲を得る。よって第2図のB8端子
によりスイッチダイオードD2を導通、非導通すること
によって、900MHz〜1900 MUzまでの周波
数可変範囲を得ようとするものであるが、上記回路の場
合、導通、非導通時の周波数の重なシが少ないだめ、素
子のバラツキ等によシ周波数に不連続部分が生じるとい
う欠点があった。
In the case of formula (6), the change in C8 is 0.9 ], pF ~ 1
.. 35pF, 1700MHz ~ 1900M
Obtain a frequency variable range of Hz. Therefore, by making the switch diode D2 conductive and non-conductive using the B8 terminal in Fig. 2, a frequency variable range from 900 MHz to 1900 MUz is attempted to be obtained. Although there are few overlapping frequencies, there is a drawback that discontinuous parts occur in the frequencies due to variations in the elements.

(発明の目的) 本発明は、かかる欠点を改善するもので、スイッチダイ
オードの代シにバラクタダイオードを使用し、周波数可
変範囲を拡大すると共に、バラクタダイオードを順方向
に用いて切り換えるようにして、切り換え時の周波数の
重なりを増大させ、素子のバラツキ等による不連続部分
が生じない局部発振回路を提供することを目的とする。
(Object of the Invention) The present invention aims to improve such drawbacks by using a varactor diode in place of the switch diode, expanding the frequency variable range, and switching by using the varactor diode in the forward direction. It is an object of the present invention to provide a local oscillation circuit that increases frequency overlap during switching and does not generate discontinuous portions due to element variations or the like.

(発明の構成) 上記目的を達成するために本発明は、局部発振回路にお
いて第1の外部直流電位(同調電位)により容量を可変
できる第1のバラクタダイオード(同調ダイオード)と
、共振線路と、第2の外部直流電位により導通・非導通
が制御されると共に前1尼第1のバラクタダイオードに
加えている外部直流電位によって容量を可変できる第2
のバラクタダイオードとを直列に接続して共振体部を構
成し、この共振体部の一端を増幅器を構成するトランジ
スタのベースあるいはコレクタに接続すると共に他端を
交流的に接地し、さらに前記第2のバラクタダイオード
のアノード側に第1の切り換えスイッチの入力端子を、
カソード側に第2の切り換えスイッチの入力端子をそれ
ぞれ接続し、第1の切シ換えスイッチの一方の接点には
抵抗又はチョークコイルを通して前記第2の外部直流電
位を与え、他方の接点は抵抗又はチョークコイルを通し
て接地し、また、第2の切り換えスイッチの一方の接点
には前記第1の外部直流電位を抵抗又はチョークコイル
を通してそのま−1あるいは分割して与え、他方の接点
は接地し、これら第1および第2の切り換えスイッチを
操作して前記第2のバラクタダイオードの導通・非導通
を制御するととによシ周波数範囲を切シ換えるようにし
たことを特徴とするもので、これによシ切り換え時の周
波数の重なりを増大させることができ、素子のバラノキ
等による不連続部分をなくすことができる。
(Structure of the Invention) In order to achieve the above object, the present invention includes a first varactor diode (tuning diode) whose capacitance can be varied by a first external DC potential (tuning potential) in a local oscillation circuit, a resonant line, A second varactor diode whose conduction/non-conduction is controlled by a second external DC potential and whose capacitance can be varied by an external DC potential applied to the first varactor diode.
varactor diodes are connected in series to constitute a resonator section, one end of this resonator section is connected to the base or collector of a transistor constituting an amplifier, and the other end is grounded in an alternating current manner. Connect the input terminal of the first changeover switch to the anode side of the varactor diode of
The input terminals of the second changeover switches are connected to the cathode side, and the second external DC potential is applied to one contact of the first changeover switch through a resistor or a choke coil, and the other contact is connected to the resistor or The first external DC potential is applied to one contact of the second changeover switch directly or divided through a resistor or choke coil, and the other contact is grounded. The device is characterized in that when the first and second changeover switches are operated to control conduction/nonconduction of the second varactor diode, the frequency range is changed over. It is possible to increase the frequency overlap at the time of switching, and it is possible to eliminate discontinuous portions caused by element irregularities or the like.

(実施例の説明) 以下、本発明の一実施例について図面を参照し、なから
説明する。第3図は本発明の一実施1+1]における局
部発振回路の構成を示すもので、第3図においてブロッ
クCは共振体部、ブロックDけ」曽幅部である。共振体
部ブロックCは増幅器プロ、りDと結合容量C1で接続
され、結合容量C1とバラクタダイオードD1の接続点
には高抵抗R1を通して同調電圧BTが加えられる。バ
ラクタダイオードI)1のアノードには、共振線路L1
の一端が接続され、共振線路L1の他端は、高抵抗R2
を通して接地されると共に、結合容量C2を通し−Cバ
ラクタダイオードD2のアノードに接続される。丑だ、
バラクタダイオードD′2には特定の容量C8Dが並列
に接続され、バラクタダイオードD′2のカソードは大
容量C8を通して接地される。
(Description of Embodiment) Hereinafter, an embodiment of the present invention will be described from the beginning with reference to the drawings. FIG. 3 shows the configuration of a local oscillation circuit in one embodiment 1+1 of the present invention. In FIG. 3, block C is a resonator section and block D is a narrow section. The resonator block C is connected to the amplifier circuit D through a coupling capacitor C1, and a tuning voltage BT is applied to the connection point between the coupling capacitor C1 and the varactor diode D1 through a high resistance R1. A resonant line L1 is connected to the anode of the varactor diode I)1.
One end of the resonant line L1 is connected, and the other end of the resonant line L1 is connected to a high resistance R2.
-C is connected to the anode of the varactor diode D2 through the coupling capacitor C2. It's ox.
A specific capacitor C8D is connected in parallel to the varactor diode D'2, and the cathode of the varactor diode D'2 is grounded through the large capacitor C8.

結合容量C2とバラクタダイオードD′2の接続点には
切り換えスイッチS1が接続され、この切り換えスイッ
チS1によシ同接続点には高抵抗R9を通してバイアス
電位B8と、高抵抗R4゜を通して接地とが切シ換えて
与えられるようにしている。捷だ、バラクタダイオード
D′2と容量C8の接続点には切シ換えスイッチS2が
接続され、この切り換えスイッチS2によシ同接続点に
は接地と、高抵抗R7を通して同調電圧BT(あるいは
これを分割した電位)とが切り換えて与えられるように
している◇上述の切シ換えスイッチS1と82は互いに
独立したものでも、あるいは連動させるようにしたもの
でもよい。
A changeover switch S1 is connected to the connection point between the coupling capacitor C2 and the varactor diode D'2, and the changeover switch S1 connects a bias potential B8 through a high resistance R9 to the connection point, and a grounding through a high resistance R4°. I'm trying to change the way it's given to me. A changeover switch S2 is connected to the connection point of the varactor diode D'2 and the capacitor C8, and the connection point of this changeover switch S2 is connected to the ground, and the tuning voltage BT (or this) is connected through the high resistance R7. ◇The above-mentioned changeover switches S1 and 82 may be independent of each other or may be linked.

上記構成において、今、切シ換えスイッチS。In the above configuration, the changeover switch S is now selected.

をd側、切り換えスイッチS2をd側にすると、バラク
タダイオードD2は導通し、共振体は結合容量C2、大
写fACB及び切シ換えスイッチs2を通して接地され
た形となる。故に、共振容量はバラクタダイオードD1
の同調容量CD、と結合容量C1,C2゜(C8)と、
増幅器プロ、りDを含めた浮遊容量C8との合成になる
が、C1,C2,C8はcDlに対して大きな値を用い
るだめ実質上の結合容量C6はCo嬌CD1+Cf・・
・・−(7) となる。
When the changeover switch S2 is set to the d side and the changeover switch S2 is set to the d side, the varactor diode D2 becomes conductive, and the resonator becomes grounded through the coupling capacitance C2, the large image fACB, and the changeover switch s2. Therefore, the resonant capacitance is the varactor diode D1
The tuning capacitance CD, and the coupling capacitance C1, C2° (C8),
The amplifier is combined with the stray capacitance C8 including RI D, but since C1, C2, and C8 should have large values relative to cDl, the actual coupling capacitance C6 is Co-CD1+Cf...
...-(7) becomes.

才だ、切り換えスイッチS1.S2をそれぞれb側、C
側にすると、バラクタダイオード叫に逆バイアスがかか
り、バラクタダイオード+D′2の容量をcl、2とす
ると となる。
Excellent, changeover switch S1. S2 on side b and C
When it is on the side, reverse bias is applied to the varactor diode, and if the capacitance of the varactor diode +D'2 is cl,2.

ここでCH)= 1 pF 、 Cf= 0.5 pF
CD、 = 0.7 pF〜6 pF 、 CD2=0
.5 pF〜5pFにすれば、(7)式のC8の可変範
囲は、1.2 pF〜6.5pFとなり従来と同じであ
シ、共振線路をインピーダンス50Ω、線路長14.2
+m++とすると周波数Tif変・j・α囲は900 
MHz 〜1750 MHzとなる。
where CH) = 1 pF, Cf = 0.5 pF
CD, = 0.7 pF ~ 6 pF, CD2=0
.. 5 pF to 5 pF, the variable range of C8 in equation (7) is 1.2 pF to 6.5 pF, which is the same as before, and the resonant line has an impedance of 50 Ω and a line length of 14.2 pF.
If +m++, the frequency Tif change, j, α range is 900
MHz to 1750 MHz.

(8)式の場合はC8の変化は0.98pF〜3.5p
Fとなシ、coの変化比は3.6となり、従来の1.5
 (1,35A)91)に比べて24倍増大し、周波数
可変jliα囲も1175〜18751旧2となり、切
り換え時の周波数の重なりが50 MI(7,であった
のが575 MHzに増大された。
In the case of formula (8), the change in C8 is 0.98pF to 3.5p
The change ratio of F, Nashi, and Co is 3.6, compared to the conventional 1.5.
(1,35A) 91), the frequency variable jliα range is now 1175 to 18751 (old 2), and the frequency overlap when switching has been increased from 50 MI (7, to 575 MHz). .

増幅器ブロックDは第2図の場合の増幅器ブロック13
と同じであり、ここで、この増幅器ブロックについて説
明する。第3図において、増幅器を構成するトランジス
タQ1のベースには前述の結合容3t C1を介して共
振体部ブロックCが接続され、トランジスタQ1のコレ
クタはC6の大容量で接地される。また、トランジスタ
Q1のコレクタには抵抗R5全通してバイアスが与えら
れ、さらに、抵抗R4によりベース電位が与えられてい
る。この場合ベースバイアスについては自己帰還型でな
くてもよい。トランジスタQ1のエミッターコレクタ間
の容量C5はエミッタとアース間の最短距離を交流的に
接Jルするもので、C5にょシ、広帯域の発振の安定性
を改善している。R2はハイパワーをとり出すプ(めの
チョークコイルである。R6はエミッタ抵抗であり、C
7を通して発振出力をとり出すもので、電流約38 m
A時に約10 dBmの・ぐワーをとり出すことができ
る。なお発振出力のとり出し方には、種々の方法があり
、C6の容量を10 pF程度にしてコレクタからとり
出す方法や、共振線路にLあるいは容量結合によってと
り出す方法も可能である。
Amplifier block D is the amplifier block 13 in the case of FIG.
This amplifier block will be explained here. In FIG. 3, the base of the transistor Q1 constituting the amplifier is connected to the resonator block C via the aforementioned coupling capacitor 3tC1, and the collector of the transistor Q1 is grounded through the large capacitor C6. Further, a bias is applied to the collector of the transistor Q1 through the entire resistor R5, and a base potential is further applied through the resistor R4. In this case, the base bias need not be of the self-feedback type. The emitter-collector capacitance C5 of the transistor Q1 connects the shortest distance between the emitter and the ground in an alternating current manner, and improves the stability of broadband oscillation. R2 is a choke coil that extracts high power. R6 is an emitter resistor, and C
The oscillation output is taken out through 7, and the current is approximately 38 m.
Approximately 10 dBm of air can be extracted at A time. Note that there are various methods for taking out the oscillation output, including a method in which the capacitance of C6 is set to about 10 pF and the output is taken out from the collector, and a method in which the oscillation output is taken out by L or capacitive coupling to the resonant line.

パワーを考えれば、エミッタからとり出すのが最適であ
る。
Considering the power, it is best to take it out from the emitter.

本発明の場合、出力のとり出し方、あるいに共振線路の
設定個所については、多くの方法があるが、本発明は、
その共振体部のバラクタダイオードにバイアス電圧を与
え導通させ、まだ同調電圧又はその分割した電圧を与え
ることによって周波数の可変範囲を増大し、結果的に切
り換え時の周波数の重なりを大きくしているという点が
重要なポイントである。またバラクタダイオードD′2
はバラクタダイオードD1と同じ又は別の物を用いるこ
とができる。
In the case of the present invention, there are many ways to take out the output or set the resonant line, but the present invention
By applying a bias voltage to the varactor diode in the resonator section to make it conductive, and then applying a tuning voltage or its divided voltage, the frequency variable range is increased, and as a result, the frequency overlap during switching is increased. This is an important point. Also, the varactor diode D'2
can be the same as or different from the varactor diode D1.

なお、共振体部ブロックCにおいて、バラクタダイオー
ドD1には同調電圧BTの逆バイアス電圧、バラクタダ
イオードD′2にはバイアス電圧BSと共に同調電圧B
T又はこれを分割した電圧が力えられている点が重要で
あシ、ダイオードD、、D’、の向きは特に問題でない
。才だ、上記実施例における共振体部ブOツクC中のR
1+ R7およびR7は抵抗にかえてチョークコイルを
使うようにしてもよい。
In the resonator block C, the varactor diode D1 is supplied with a reverse bias voltage of the tuning voltage BT, and the varactor diode D'2 is supplied with a tuning voltage B together with the bias voltage BS.
It is important that the voltage T or its divided voltage is applied, and the orientation of the diodes D, D' does not particularly matter. In the above embodiment, R in the resonator block C
1+ R7 and R7 may use choke coils instead of resistors.

(発明の効果) 以上説明したように本発明の局部発振回路は、第1の外
部直流電位により容量を可変できる同調ダイオードと、
共振線路と、第2の外部直流電位により導通・非導通が
制御されると共に前記同調ダイオードに加えている外部
直流電位によって容量を可変できるバラクタダイオード
とを直列に接続して共振体部を構成し、この共振体部の
一端を増幅器を構成するトランジスタのベースあるいは
コレクタに接続すると共に他端を交流的に接地し、さら
に前記バラクタダイオードのアノード側に第1のlJJ
り換えスイッチの入力端子を、カソード側に第2の切り
換えスイッチの入力端子をそれぞれ接続し、第1の切り
換えスイッチの一方の接点にd、抵抗又はチョークコイ
ルを通して第2の外部直流電位を与え、他方の接点は抵
抗又はチョークコイルを通して接地し、また、第2の切
り換えスイッチの一方の接点には前記第1の外部直流電
位を抵抗又はチョークコイルを通してその寸まあるいは
分割したものを与え、他方の接点は接地し、これら第1
および第2の切り換えスイッチを操作して前記・ぐラク
タダイオードの導通・非導通を制御することによシ周波
数範囲を切り換えるようにしたもので、この構成により
周波数可変範囲が拡大し、その結果、局部発振回路の周
波数の9ノリ換え時の周波数の重なりを増大することが
できる。
(Effects of the Invention) As explained above, the local oscillation circuit of the present invention includes a tuning diode whose capacitance can be varied by a first external DC potential;
A resonator section is constructed by connecting in series a resonant line and a varactor diode whose conduction/non-conduction is controlled by a second external DC potential and whose capacitance can be varied by an external DC potential applied to the tuning diode. , one end of this resonator part is connected to the base or collector of a transistor constituting the amplifier, and the other end is grounded in an alternating current manner, and a first lJJ is connected to the anode side of the varactor diode.
Connecting the input terminal of the changeover switch to the cathode side and the input terminal of the second changeover switch to the cathode side, and applying a second external DC potential to one contact of the first changeover switch through a resistor or a choke coil, The other contact is grounded through a resistor or choke coil, and the first external DC potential is applied to one contact of the second changeover switch through the resistor or choke coil, and the other contact is connected to the ground through the resistor or choke coil. The contacts are grounded and these first
The frequency range is changed by controlling conduction/non-conduction of the glucta diode by operating a second changeover switch.This configuration expands the frequency variable range, and as a result, It is possible to increase the frequency overlap when changing the frequency of the local oscillation circuit by 9 times.

従って、本発明によれば素子のバラツキ等による周波数
の不連続部分をなくすことができ、信頼性の高い局部発
振回路を提供することができる。
Therefore, according to the present invention, it is possible to eliminate frequency discontinuities due to element variations, etc., and it is possible to provide a highly reliable local oscillation circuit.

【図面の簡単な説明】[Brief explanation of the drawing]

λ 第1図は片側終端の7線路のインピーグノスfl’r性
図、第2図は局部発振回路の従来例の回路図、第3図は
本発明の一実施例における局部発振回路の回路図である
。 A、C・・・共振体部プロ、り、、 l’3 、1)−
増幅器ブロック、L、・・・共振線路、D、、D′2 
バラクタグイオ−ド’、 Ql”’hランジスタ、sl
、s2 ・・切り換えスイッチ。 特許出願人 松下電器産業株式会社 (−二−)l 第1図 −」× Δ 2ソ 立入 入 4 2 4 第2図 L J 第3図 L−一一一一一、 J
λ Fig. 1 is an impingance fl'r characteristic diagram of 7 lines terminated on one side, Fig. 2 is a circuit diagram of a conventional example of a local oscillation circuit, and Fig. 3 is a circuit diagram of a local oscillation circuit in an embodiment of the present invention. be. A, C... Resonator part professional, l'3, 1)-
Amplifier block, L, ... resonant line, D, , D'2
Barac tag diode', Ql''h transistor, sl
, s2...Selector switch. Patent applicant Matsushita Electric Industrial Co., Ltd. (-2-) Figure 1-'' × Δ 2 So Entrance 4 2 4 Figure 2 L J Figure 3 L-11111, J

Claims (1)

【特許請求の範囲】[Claims] 第1の外部直流電位によ多容量を可変できる同調ダイオ
ードと、共振線路と、第2の外部直流電位により導通・
非導通が制御されると共に前記同調ダイオードに加えて
いる外部直流電位によって容量を可変できるバラクタダ
イオードとを直列に接続して共振体部を構成し、この共
振体部の一端を増幅蒔を構成するトランジスタのベース
あるいはコレクタに接続すると共に他端を交流的に接地
し、さらに前記バラクタダイオードのアノード側に第1
の切り換えスイッチの入力端子を、カソード側に第2の
切シ換えスイッチの入力端子をそれぞれ接続し、第1の
切り換えスイッチの一方の接点には抵抗又はチョークコ
イルを通して前記第2の外部直流電位を与え、他方の接
点は抵抗又はチョークコイルを通して接地し、寸だ、第
2の切り換えスイッチの一方の接点には前記第1の外部
直流電位を抵抗又はチョークコイルを通してその寸まあ
るいは分割して与え、他方の接点は接地し、これら第1
および第2の切り換えスイッチを操作して前記バラクタ
ダイオードの導通・非導通を制御することにより周波数
範囲を切り換えるようにしたことを特徴とする局部発振
回路。
A tuning diode whose capacitance can be varied by a first external DC potential, a resonant line, and a conduction/conduction circuit by a second external DC potential.
A varactor diode whose non-conduction is controlled and whose capacitance can be varied by an external direct current potential applied to the tuning diode is connected in series to constitute a resonator section, and one end of this resonator section constitutes an amplification plate. A first terminal is connected to the base or collector of the transistor, and the other end is grounded in an alternating current manner.
The input terminal of a changeover switch is connected to the cathode side, and the input terminal of a second changeover switch is connected to the cathode side, and the second external DC potential is connected to one contact of the first changeover switch through a resistor or a choke coil. the other contact is grounded through a resistor or a choke coil, and the first external DC potential is applied to one contact of the second changeover switch in the same amount or in divided form through the resistor or choke coil; The other contact is grounded and these first
and a local oscillation circuit characterized in that the frequency range is switched by controlling conduction/non-conduction of the varactor diode by operating a second changeover switch.
JP14508383A 1983-08-10 1983-08-10 Local oscillating circuit Pending JPS6037804A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14508383A JPS6037804A (en) 1983-08-10 1983-08-10 Local oscillating circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14508383A JPS6037804A (en) 1983-08-10 1983-08-10 Local oscillating circuit

Publications (1)

Publication Number Publication Date
JPS6037804A true JPS6037804A (en) 1985-02-27

Family

ID=15376984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14508383A Pending JPS6037804A (en) 1983-08-10 1983-08-10 Local oscillating circuit

Country Status (1)

Country Link
JP (1) JPS6037804A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6140020U (en) * 1984-08-15 1986-03-13 富士通テン株式会社 Voltage controlled oscillator circuit
JPS626504A (en) * 1985-07-03 1987-01-13 Hitachi Ltd Voltage controlled oscillator
JPS6238005A (en) * 1985-08-13 1987-02-19 Matsushita Electric Ind Co Ltd Variable frequency oscillator
JPH03172305A (en) * 1989-11-16 1991-07-25 Soc Atochem Carrier for supporting catalyst for olefin polymerization, its production and catalyst obtained from said carrier

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6140020U (en) * 1984-08-15 1986-03-13 富士通テン株式会社 Voltage controlled oscillator circuit
JPS626504A (en) * 1985-07-03 1987-01-13 Hitachi Ltd Voltage controlled oscillator
JPS6238005A (en) * 1985-08-13 1987-02-19 Matsushita Electric Ind Co Ltd Variable frequency oscillator
JPH03172305A (en) * 1989-11-16 1991-07-25 Soc Atochem Carrier for supporting catalyst for olefin polymerization, its production and catalyst obtained from said carrier
JPH0733406B2 (en) * 1989-11-16 1995-04-12 アトケム Carrier of olefin polymerization catalyst, method for producing the carrier, and catalyst obtained from the carrier

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