JPS603134A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPS603134A
JPS603134A JP58112196A JP11219683A JPS603134A JP S603134 A JPS603134 A JP S603134A JP 58112196 A JP58112196 A JP 58112196A JP 11219683 A JP11219683 A JP 11219683A JP S603134 A JPS603134 A JP S603134A
Authority
JP
Japan
Prior art keywords
wire
film
fine wire
bonding
fusion point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58112196A
Other languages
Japanese (ja)
Inventor
Saneyasu Hirota
弘田　実保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58112196A priority Critical patent/JPS603134A/en
Publication of JPS603134A publication Critical patent/JPS603134A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78268—Discharge electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To enable to perform ball bonding according to an Al fine wire by a method wherein the metal wire whose surface is coated with an insulating film having a fusion point higher than the fusion point of the metal wire is used. CONSTITUTION:At this wire bonding, an Al fine wire 7 formed uniformly with an insulating film 8 previously is used. As action of the film 8 thereof, because it is to check a phenomenon that an arc 5 is not concentrated to the tip of the fine wire 7, and to creep up the side, for a property needed for the film 8, the film is not fused and dissolved at the fusion point of Al, and to prevent the fine wire 7 from the arc 5. Therefore to make the film to be provided with a fusion point higher than the fusion point of Al is necessary. When formation of a ball is performed according to arc discharge using the fine wire 7 formed with the film 8, faults such as breaking or bending of the fine wire 7, generation of a deformed ball, etc. are not generated, and the ball 3 of the prescribed size is formed at the tip of the fine wire stably.

Description

【発明の詳細な説明】 発明の技術分野 この発明は工Ｃやトランジスタなどの製造において金属
線ｊ−１ｋ接続するワイヤボンディング方法・特にポー
ルポンディング方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a wire bonding method, particularly a pole bonding method, for connecting metal wires j-1k in the manufacture of circuit boards, transistors, and the like.

従来技術 熱圧着あるいは超音波併用熱圧着方式による自動ワイヤ
ポンディングにおいて、半導体チ・ノフ。In automatic wire bonding using conventional technology thermocompression bonding or ultrasonic thermocompression bonding method, semiconductor chipping is performed.

側へ接合する際のポンディングの方向性をなくすため、
金属細線先端？ポール状にすることが要求さｎる。In order to eliminate the directionality of bonding when joining to the side,
Thin metal wire tip? It is required to make it into a pole shape.

従来ボンディング粗金属ｆＩＩＩ線としては金線が使用
され、ボーｌし形成には、電気トーチ方式すなわち金属
細線先端と可動電極の間で放電させ、金属細線先端を溶
融凝固させてポール状にする方式・および水素炎方式す
なわち水素炎で金属離線を溶融切断すると同時にポール
を形成する方式が用いらｎていたが、金細線を用いるこ
とから、コストが高くなるという欠点があった。Conventionally, gold wire is used as the bonding coarse metal FIII wire, and the ball is formed using an electric torch method, that is, a method in which a discharge is generated between the tip of the thin metal wire and a movable electrode, and the tip of the thin metal wire is melted and solidified to form a pole shape. -Also, a hydrogen flame method, that is, a method in which a metal wire is melted and cut using a hydrogen flame and a pole is formed at the same time, has been used, but since a thin gold wire is used, the cost is high.

そこで金細線にかわ９アルシミニウム犯線２使用するこ
とが考えらｎるが、アルミニウム細線を用い電気トーチ
方式でポール形成を行うと、アルミニウムが金に比べて
はるかに比重が小さいこと、あるいは融点が低いことな
どでの物理的性質の違いに加え、アークのはい上り現象
によってワイヤ先端に入熱が集中せず、ワイヤのかな９
上方まで軟化してアルミニウム細線の折れ曲がり、異形
ポールの発生などが起こる。Therefore, it is considered to use aluminum wire instead of gold wire, but when forming poles using an electric torch method using aluminum wire, aluminum has a much lower specific gravity than gold, or has a lower melting point. In addition to differences in physical properties, such as arc creeping, the heat input to the wire tip is not concentrated, and the wire is
It softens upward, causing bending of thin aluminum wires and formation of oddly shaped poles.

第１しｊにそ扛らの゛現象を模式的に示す。図において
、（１）はギヤピラリチップ、（２）はキャブラリチッ
プ（１）に挿通さｆｌだア７レミニウム！ＩＩｌ線、＋
３）　ｉｉ　７　／レミニウム細線（２）の先端に形成
さｆ′したポーｌし、（４）はアルミニウム軸線（２）
の先端との間で放電せしめる可動電極、（５）はアルミ
ニウム細線（２）の先端と可動１！極（４）間に生じた
アーク、（６）はアーク発生用電源を示す。First, these phenomena will be schematically shown. In the figure, (1) is the gear pillar chip, and (2) is the fl that is inserted into the cabling chip (1). IIl line, +
3) ii 7 / f' pole formed at the tip of the thin aluminum wire (2), (4) is the aluminum axis line (2)
The movable electrode (5) causes a discharge between the tip of the thin aluminum wire (2) and the movable electrode 1! The arc generated between the poles (4) and (6) indicate the power source for generating the arc.

なお、大気中でボーｌし形成を行うと、アルミニウム線
は伸固な酸化皮膜を形成するため、ポール形成成に不活
性ガス雰囲気中で行う必要がある。また、水素炎？用い
てポール形成を行う場合も、酸化皮膜を形成するため、
アルミニウム軸線に適用することは出来ない。Note that if the aluminum wire is formed by balling in the atmosphere, a tough oxide film will be formed on the aluminum wire, so it is necessary to form the pole in an inert gas atmosphere. Also, hydrogen flame? Even when forming poles using
It cannot be applied to aluminum axes.

発明の概要 この発明は、金属線の融点より高い融点を有する絶縁皮
膜で表面が被覆さ−ｎた金属線を用いることにより、ア
ルミニウム線１１線によるポールボンディングを可能に
することができるワイヤボンディング方法を提案するも
のである。Summary of the Invention The present invention provides a wire bonding method that enables pole bonding with an aluminum wire by using a metal wire whose surface is coated with an insulating film having a melting point higher than the melting point of the metal wire. This is what we propose.

発明の実施例 以下、この発明の一実施例全図について説明する。第２
図において、（７〕は金属線、（８）は金属線Ｃ力の表
面を被覆する絶縁皮膜、（９）は金属線（７）の給電部
であり、例えば長尺状金属線（７）の終端部の絶縁皮膜
（８）をはく離することにより形成される。EMBODIMENT OF THE INVENTION Hereinafter, one embodiment of the present invention will be explained in its entirety. Second
In the figure, (7) is a metal wire, (8) is an insulating film that covers the surface of the metal wire C, and (9) is a power feeding part of the metal wire (7), for example, a long metal wire (7). It is formed by peeling off the insulating film (8) at the terminal end of the insulating film (8).

この実施例においては、予め絶縁皮膜（８）を１〜２μ
ｍ程度の厚さに均一に形成したアルミニウム細線（７）
？用いる。なお、絶縁皮膜（８）の作用としては、アー
ク（５）が細線（７）の先端に集中せず、側面にはい上
る現象を防止することであるから、絶縁皮膜（８）に要
求さｎる性質としては、アルミニウム線の融点６６０Ｃ
以下で融解、分解せず、細線〔７）ヲアーク（５）から
保護するということである。このためアルミニウムの融
点より高い融、蝋ヲ有する必要がある。In this example, the insulating film (8) is coated with a thickness of 1 to 2 μm in advance.
Aluminum thin wire (7) uniformly formed to a thickness of about m
? use The function of the insulating film (8) is to prevent the arc (5) from concentrating on the tip of the thin wire (7) and to prevent it from creeping up the side. As for the properties, the melting point of aluminum wire is 660C.
This means that it does not melt or decompose below, and protects the thin wire [7] from arcing (5). For this reason, it is necessary to have a melting point higher than that of aluminum.

また、ボンディング１生を１氏下させるもの、ボンディ
ング後ワイヤあるいはＩＣ、トランジスタとの接合部？
劣化させるものには好ましくない。例えばＡｌ、０．ｌ
皮膜が適当な皮膜である。Also, what makes bonding 1st grade worse? Is it the wire after bonding or the junction with IC or transistor?
It is not desirable for things that cause deterioration. For example, Al, 0. l
The coating is a suitable coating.

図に示したように、絶縁皮膜（８）？形成したアルミニ
ウム利ｊ線（７）？用いて、アーク放電によるポール形
成２行うと、利１線（７）の折ｎ曲が９、異形ボールの
発生などの不良が発生せず、安定して細線先端に所定の
大きさのポール（３）が形成される。As shown in the figure, the insulation film (8)? Formed aluminum wire (7)? When pole formation 2 is performed by arc discharge using a thin wire, no defects such as bending of the wire (7) or irregularly shaped balls occur, and a pole of a predetermined size is stably formed at the tip of the thin wire ( 3) is formed.

なお、上ｉｉ２突施例においては、アルミニウム細Ｈｋ
用いた工Ｃ、トランジスタなどのワイヤボンディングに
ついて説明したが、２００７１１７１程度の太線ヲ用い
たアルミニウム線のポールボンディングなど、他Ｃ接合
法への適用も可能である。In addition, in the upper ii two-projection embodiment, the aluminum thin Hk
Although we have described the method C used for wire bonding of transistors, etc., it is also possible to apply it to other C bonding methods, such as pole bonding of aluminum wires using thick wires such as 20071171.

発明の効果 この発明は以上説明した通り、金）風綿の融点より高い
融点？有する絶、縁皮膜で表面が破覆さｆ’した金属線
ケ用いるようにしたので、アルミニウム線であっても安
定してポール全形成することができ、接合品質を向上で
きる効果がある。Effects of the Invention As explained above, this invention has a melting point higher than the melting point of gold). Since the metal wire whose surface has been destroyed by the insulation and edge film f' is used, even if it is an aluminum wire, the entire pole can be stably formed, which has the effect of improving the bonding quality.

【図面の簡単な説明】[Brief explanation of the drawing]

第１（８）は従来法によりアルミニウム線細線にボール
形成ｒ行った場合の現象を模式的に示した概要構成図、
第２図は本発明の一実施例を模式的に示す概要構成図で
ある。 図において、（３）はポール、（４）は可動電極、ｒ５
）はアーク％丸６ンはアーク発生用電源、（７）は金属
線、（８）は絶縁皮膜である。 なお、図中同一符号は同一または相当部分を示す。 代理人　大岩増雄The first (8) is a schematic configuration diagram schematically showing the phenomenon when ball formation is performed on thin aluminum wire by the conventional method,
FIG. 2 is a schematic configuration diagram schematically showing an embodiment of the present invention. In the figure, (3) is a pole, (4) is a movable electrode, and r5
) is the arc % circle is the power source for arc generation, (7) is the metal wire, and (8) is the insulating film. Note that the same reference numerals in the figures indicate the same or corresponding parts. Agent Masuo Oiwa

Claims (2)

【特許請求の範囲】[Claims] （１）　金属線の先端とこｎに対向する電砺との間のア
ーク放電によって上記金属線の先端にポール？形成し、
このポールを用いて上記金属線全接着する方法において
、上記金属線の融、ヴより高い融、ｇ、　ｆｚｃ有する
絶縁皮膜で表面が彼覆さ扛た金Ｙ線を用いることを特徴
とするワイヤボンディング方法。(1) A pole is formed at the tip of the metal wire by arc discharge between the tip of the metal wire and the electric wire opposite to this. form,
The wire bonding method is characterized in that the method of bonding all of the metal wires using this pole uses a gold Y wire whose surface is covered with an insulating film having a higher melting point, g, fzc than the melting point, g, fzc of the metal wire. Method. （２）　金属線はアルミニウムーであり、絶縁皮膜は月
、Ｏｓ膜であることを特徴とする特許請求の範囲第１項
記載のワイヤボンディング方法。(2) The wire bonding method according to claim 1, wherein the metal wire is aluminum and the insulating film is an Os film.
JP58112196A 1983-06-20 1983-06-20 Wire bonding method Pending JPS603134A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58112196A JPS603134A (en) 1983-06-20 1983-06-20 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58112196A JPS603134A (en) 1983-06-20 1983-06-20 Wire bonding method

Publications (1)

Publication Number Publication Date
JPS603134A true JPS603134A (en) 1985-01-09

Family

ID=14580664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58112196A Pending JPS603134A (en) 1983-06-20 1983-06-20 Wire bonding method

Country Status (1)

Country Link
JP (1) JPS603134A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63208236A (en) * 1987-02-25 1988-08-29 Hitachi Ltd Bonding method for wire with insulating coating
US5037023A (en) * 1988-11-28 1991-08-06 Hitachi, Ltd. Method and apparatus for wire bonding
US5176310A (en) * 1988-11-28 1993-01-05 Hitachi, Ltd. Method and apparatus for wire bond
JPH08274126A (en) * 1996-04-04 1996-10-18 Hitachi Ltd Manufacture of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63208236A (en) * 1987-02-25 1988-08-29 Hitachi Ltd Bonding method for wire with insulating coating
US5037023A (en) * 1988-11-28 1991-08-06 Hitachi, Ltd. Method and apparatus for wire bonding
US5110032A (en) * 1988-11-28 1992-05-05 Hitachi, Ltd., Method and apparatus for wire bonding
US5176310A (en) * 1988-11-28 1993-01-05 Hitachi, Ltd. Method and apparatus for wire bond
JPH08274126A (en) * 1996-04-04 1996-10-18 Hitachi Ltd Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
US3672047A (en) Method for bonding a conductive wire to a metal electrode
US6455785B1 (en) Bump connection with stacked metal balls
US3380155A (en) Production of contact pads for semiconductors
US3136032A (en) Method of manufacturing semiconductor devices
US4948030A (en) Bond connection for components
KR910000154B1 (en) Semiconductor device and preparation there of and bonding wire used there of
JPS60154537A (en) Method of producing semiconductor device
JPS603134A (en) Wire bonding method
JP2737953B2 (en) Gold alloy wire for gold bump
JPS5863142A (en) Bonding wire and bonding process
US3561084A (en) Method of terminating a lamp filament
JPS6097655A (en) Wire for bonding
JPS60134444A (en) Formation for bump electrode
US4739142A (en) Method of producing a wire bonding ball
JPH0158861B2 (en)
JPS6333296B2 (en)
JP2621288B2 (en) Au alloy extra fine wire for semiconductor element bonding
JPS61194735A (en) Semiconductor device
JPH02170931A (en) Fine gold-alloy wire for gold bump
JPS61172344A (en) Wire bonding process
JP2506152B2 (en) Wire bonding method for coated wire
JPS61199645A (en) Ball forming method for wire bonding
JPH02251155A (en) Gold alloy thin wire for semiconductor elements and bonding method thereof
JPH01227458A (en) Formation of bump electrode
JPS61208229A (en) Formation of wire bonding ball