JPS6031285A - Semiconductor laser with built-in monitor - Google Patents
Semiconductor laser with built-in monitorInfo
- Publication number
- JPS6031285A JPS6031285A JP58139011A JP13901183A JPS6031285A JP S6031285 A JPS6031285 A JP S6031285A JP 58139011 A JP58139011 A JP 58139011A JP 13901183 A JP13901183 A JP 13901183A JP S6031285 A JPS6031285 A JP S6031285A
- Authority
- JP
- Japan
- Prior art keywords
- light
- semiconductor laser
- heat sink
- monitor
- projection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、モニター付半導体レーザに関するものである
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor laser with a monitor.
一般に、半導体レーザを使用する際には、パッケージの
外へ放出される光ビームを主光ビームとし、パッケージ
の内側へ放出される光ビーム（以下モニター光と呼ぶ）
を光出力の監視用とするために同一パンケージ内に受光
半導体素子を内蔵する方式が採られている。Generally, when using a semiconductor laser, the light beam emitted outside the package is the main light beam, and the light beam emitted inside the package (hereinafter referred to as monitor light).
In order to monitor the optical output, a method has been adopted in which a light-receiving semiconductor element is built into the same pancake.
従来は、第１図に示すように、モニター光の進行方向の
延長上に受光半導体素子を設置し、光出力を監視する方
式が採用されていたが、この方式では、モニター光の一
部が受光半導体素子の表面で反射し、その反射光が主光
ビームに重畳され、雑音の原因となシ、特に雑音をきら
うビデオ・ディスクでは画像が飛ぶという不具合が生じ
る。Conventionally, as shown in Figure 1, a method was adopted in which a light-receiving semiconductor element was installed on the extension of the monitor light in the traveling direction and the light output was monitored. The light is reflected by the surface of the light-receiving semiconductor element, and the reflected light is superimposed on the main light beam, causing noise, and especially in video discs where noise is a problem, images may be skipped.
また、半導体レーザは、受光半導体素子に対して９０°
ずれて設置しであるので、電極を取るためボンディング
する際も、半導体レーザ側をボンディングした後ステム
を９０°回転してから受光半導体素子側のボンディング
を行なうという手間がかかった。In addition, the semiconductor laser is 90° with respect to the light receiving semiconductor element.
Since they are installed offset, even when bonding to remove the electrodes, it takes time and effort to bond the semiconductor laser side, rotate the stem 90 degrees, and then bond the light-receiving semiconductor element side.
本発明の目的は、従来のこのような欠点を解決すること
のできるモニタ・−封手導体レーザを提供することにあ
る。SUMMARY OF THE INVENTION An object of the present invention is to provide a monitor/seal conductor laser that can overcome these conventional drawbacks.
本発明によれば、５字をに加工したヒートシンクの凸部
に半導体レーザを設置し、そのヒートシンクの凸部の表
面よシ低い面に受光面が位置するようにモニター用の受
光半導体素子を設置したことを特徴とするモニター付半
導体レーザが得られる。According to the present invention, a semiconductor laser is installed on the convex part of a heat sink processed into a 5-shaped shape, and a light-receiving semiconductor element for monitoring is installed so that the light-receiving surface is located on a surface lower than the surface of the convex part of the heat sink. A semiconductor laser with a monitor is obtained.
以下、本発明を図面を用いて詳細に説明する。Hereinafter, the present invention will be explained in detail using the drawings.
第１図は従来のパッケージ内部の断面図である。FIG. 1 is a sectional view of the inside of a conventional package.
第２図は本発明によるパッケージ内部の断面図の１例で
ある。第３図はヒートシンク部分の拡大図である。第３
図に示すように、Ｌ字賊に加工したヒートシンク３の凸
部に半導体レーザ１を設置しヒートシンク３の凸部の表
面の延長面よシ下面に受光面が位置するようにモニター
用の受光半導体素子２を設置し、従来の受光半導体素子
２の設置場所である第２図の６の箇所にモニター光のス
テムからの反射を防止するために無反射コートをほどこ
すことによシモニター光の反射による雑昔を防ぐことが
できる。FIG. 2 is an example of a sectional view of the inside of the package according to the present invention. FIG. 3 is an enlarged view of the heat sink portion. Third
As shown in the figure, the semiconductor laser 1 is installed on the convex part of the heat sink 3 which is processed into an L shape, and the light receiving semiconductor for monitoring is placed so that the light receiving surface is located below the extension surface of the convex part of the heat sink 3. By installing the element 2 and applying a non-reflective coating to the location 6 in Fig. 2, which is the installation location of the conventional light-receiving semiconductor element 2, to prevent the monitor light from being reflected from the stem, the monitor light can be reduced. It can prevent clutter caused by reflection.
なお、半導体レーザｌの垂直方向の光ビームの放射角は
、３０°〜５０°の広がりをもつので。Note that the radiation angle of the vertical light beam of the semiconductor laser l has a spread of 30° to 50°.
受光半導体素子の受光面がヒートシンク３の凸部の表面
よシ下方に位置していれば、十分にモニター光を受光で
きるので、従来と同様に光出力の監視も可能である。If the light-receiving surface of the light-receiving semiconductor element is located below the surface of the convex portion of the heat sink 3, sufficient monitor light can be received, so that the light output can be monitored as in the conventional method.
また、半導体レーザと、−受光半導体素子が同一ヒート
シンク上の同一方向の面に設置しであるので電極を取る
ためのボンディングをステムを回転することなく一度に
行なうことができる。Further, since the semiconductor laser and the light-receiving semiconductor element are installed on the same surface on the same heat sink in the same direction, bonding for removing the electrodes can be performed at once without rotating the stem.
第１図は従来のパッケージ内の断面図である。
第２図は本発明によるモニター付半導体レーザのパッケ
ージ内の断面図である。第３図はヒートシンク部分の拡
大図である。
ｌ・・・・・・半導体レーザ、２・・・・・・受光半導
体素子、３・・・・・・ヒートシンク、４・・・・・・
キャップ、５・・・・・°ガラス、６・・・・・・ステ
ム（無反射コートをほどこす場所）
代理人 弁理士 内 原 −′、＝’：）＋＞：停・“
（ぐ、、゛FIG. 1 is a cross-sectional view of the inside of a conventional package. FIG. 2 is a sectional view of the inside of a package of a semiconductor laser with a monitor according to the present invention. FIG. 3 is an enlarged view of the heat sink portion. 1...Semiconductor laser, 2...Photodetector semiconductor element, 3...Heat sink, 4...
Cap, 5...°Glass, 6...Stem (place where anti-reflective coating is applied) Agent Patent attorney Uchihara −', =':)+>:Stop・“
(Gu,,゛
Claims (1)
設置し、前記ヒートシンクの凸部の表面よシ低い面に受
光面が位置するようにモニター用の受光半導体素子を設
置したことを特徴とするモニター付半導体レーザ。A semiconductor laser is installed on a convex part of a heat sink processed into an L-shape, and a light-receiving semiconductor element for monitoring is installed so that the light-receiving surface is located on a surface lower than the surface of the convex part of the heat sink. Semiconductor laser with monitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58139011A JPS6031285A (en) | 1983-07-29 | 1983-07-29 | Semiconductor laser with built-in monitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58139011A JPS6031285A (en) | 1983-07-29 | 1983-07-29 | Semiconductor laser with built-in monitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6031285A true JPS6031285A (en) | 1985-02-18 |
Family
ID=15235391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58139011A Pending JPS6031285A (en) | 1983-07-29 | 1983-07-29 | Semiconductor laser with built-in monitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6031285A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5675597A (en) * | 1994-11-16 | 1997-10-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS543660U (en) * | 1977-06-13 | 1979-01-11 | ||
| JPS5474687A (en) * | 1977-11-26 | 1979-06-14 | Sharp Corp | Monitor construction for photo semiconductor |
| JPS55148482A (en) * | 1979-05-08 | 1980-11-19 | Canon Inc | Semiconductor laser device |
-
1983
- 1983-07-29 JP JP58139011A patent/JPS6031285A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS543660U (en) * | 1977-06-13 | 1979-01-11 | ||
| JPS5474687A (en) * | 1977-11-26 | 1979-06-14 | Sharp Corp | Monitor construction for photo semiconductor |
| JPS55148482A (en) * | 1979-05-08 | 1980-11-19 | Canon Inc | Semiconductor laser device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5675597A (en) * | 1994-11-16 | 1997-10-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device |
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