JPS6031032A - 半導体容量形圧力センサ - Google Patents
半導体容量形圧力センサInfo
- Publication number
- JPS6031032A JPS6031032A JP13893483A JP13893483A JPS6031032A JP S6031032 A JPS6031032 A JP S6031032A JP 13893483 A JP13893483 A JP 13893483A JP 13893483 A JP13893483 A JP 13893483A JP S6031032 A JPS6031032 A JP S6031032A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- moving electrode
- semiconductor substrate
- moving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13893483A JPS6031032A (ja) | 1983-07-29 | 1983-07-29 | 半導体容量形圧力センサ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13893483A JPS6031032A (ja) | 1983-07-29 | 1983-07-29 | 半導体容量形圧力センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6031032A true JPS6031032A (ja) | 1985-02-16 |
JPH0420132B2 JPH0420132B2 (cs) | 1992-03-31 |
Family
ID=15233556
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13893483A Granted JPS6031032A (ja) | 1983-07-29 | 1983-07-29 | 半導体容量形圧力センサ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6031032A (cs) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4716492A (en) * | 1986-05-05 | 1987-12-29 | Texas Instruments Incorporated | Pressure sensor with improved capacitive pressure transducer |
US4774626A (en) * | 1986-05-05 | 1988-09-27 | Texas Instruments Incorporated | Pressure sensor with improved capacitive pressure transducer |
JPS645138U (cs) * | 1987-06-29 | 1989-01-12 | ||
JP2005214735A (ja) * | 2004-01-28 | 2005-08-11 | Kyocera Corp | 圧力検出装置用パッケージ |
CN104395721A (zh) * | 2012-03-16 | 2015-03-04 | 维塔尔传感器控股有限公司 | 介电常数屏蔽 |
-
1983
- 1983-07-29 JP JP13893483A patent/JPS6031032A/ja active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4716492A (en) * | 1986-05-05 | 1987-12-29 | Texas Instruments Incorporated | Pressure sensor with improved capacitive pressure transducer |
US4774626A (en) * | 1986-05-05 | 1988-09-27 | Texas Instruments Incorporated | Pressure sensor with improved capacitive pressure transducer |
JPS645138U (cs) * | 1987-06-29 | 1989-01-12 | ||
JP2005214735A (ja) * | 2004-01-28 | 2005-08-11 | Kyocera Corp | 圧力検出装置用パッケージ |
CN104395721A (zh) * | 2012-03-16 | 2015-03-04 | 维塔尔传感器控股有限公司 | 介电常数屏蔽 |
US9538958B2 (en) | 2012-03-16 | 2017-01-10 | Endotronix, Inc. | Permittivity shielding |
Also Published As
Publication number | Publication date |
---|---|
JPH0420132B2 (cs) | 1992-03-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR930003148B1 (ko) | 반도체 압력 감지장치 | |
US3715638A (en) | Temperature compensator for capacitive pressure transducers | |
US5186054A (en) | Capacitive pressure sensor | |
US7219554B2 (en) | Semiconductor pressure sensor | |
US7448278B2 (en) | Semiconductor piezoresistive sensor and operation method thereof | |
US6051853A (en) | Semiconductor pressure sensor including reference capacitor on the same substrate | |
US6564643B1 (en) | Capacitive pressure sensor | |
JPS5855732A (ja) | 静電容量型圧力センサ | |
JP3344138B2 (ja) | 半導体複合センサ | |
EP0973012A1 (en) | Transducer | |
FR2571855A1 (fr) | Transducteur de pression absolue | |
US9557237B2 (en) | MEMS pressure sensor field shield layout for surface charge immunity in oil filled packaging | |
JPS6031032A (ja) | 半導体容量形圧力センサ | |
US4459855A (en) | Semiconductor pressure sensor | |
JPH0258789B2 (cs) | ||
JPH0420130B2 (cs) | ||
JPH0420131B2 (cs) | ||
JPS6154266B2 (cs) | ||
JPH0972805A (ja) | 半導体センサ | |
US11156520B2 (en) | Physical quantity sensor having a wall including first and second protrusion arrangements | |
US5440931A (en) | Reference element for high accuracy silicon capacitive pressure sensor | |
JPS6381867A (ja) | 半導体拡散ストレンゲ−ジ | |
CN110114650A (zh) | 压力传感器元件和具备该压力传感器元件的压力传感器模块 | |
JPS61155831A (ja) | 半導体容量形圧力センサ | |
JPH0134106Y2 (cs) |