JPS6030171B2 - Method of forming plastic insulated power cable connections - Google Patents

Method of forming plastic insulated power cable connections

Info

Publication number
JPS6030171B2
JPS6030171B2 JP56157861A JP15786181A JPS6030171B2 JP S6030171 B2 JPS6030171 B2 JP S6030171B2 JP 56157861 A JP56157861 A JP 56157861A JP 15786181 A JP15786181 A JP 15786181A JP S6030171 B2 JPS6030171 B2 JP S6030171B2
Authority
JP
Japan
Prior art keywords
plastic
protrusion
semiconducting layer
forming
crosslinking agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56157861A
Other languages
Japanese (ja)
Other versions
JPS5858812A (en
Inventor
勝一 大畠
正幸 山口
史郎 丹野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Tokyo Electric Power Co Holdings Inc
Original Assignee
Tokyo Electric Power Co Inc
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electric Power Co Inc, Hitachi Cable Ltd filed Critical Tokyo Electric Power Co Inc
Priority to JP56157861A priority Critical patent/JPS6030171B2/en
Publication of JPS5858812A publication Critical patent/JPS5858812A/en
Publication of JPS6030171B2 publication Critical patent/JPS6030171B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明法は、プラスチック絶縁電力ケーブル接続部形成
法に関し、更に詳しくは外部半導電層縁切り部を有する
プラスチック絶縁電力ケーブル押出型接続部の形成法に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present method relates to a method of forming a plastic insulated power cable connection, and more particularly to a method of forming a plastic insulated power cable extrusion type connection having an outer semiconducting layer edge.

架橋化ポリエチレン絶縁電力ケーブルで代表されるプラ
スチック絶縁電力ケーブルを接続する手段としては、ケ
ーブル絶縁体と同村質のテープあるいはシートをケーブ
ル導体接続部上に纏巻し、更にこれを加熱融着一体化し
てなる所謂加熱モールド成形方式と、ケーブル導体接続
部上に所定の金型を設置して、この中に押出装置を用い
てケーブル絶縁体と同材質の材料を押出してなる所謂、
押出モールド成形方式とがあるが、接続すべきケーブル
が例えば154KV、27弧V級の超高電圧クラスであ
る場合には、信頼性や電気特性の面から後者の方が適し
ている。
As a means of connecting plastic insulated power cables such as cross-linked polyethylene insulated power cables, a tape or sheet of the same quality as the cable insulator is wrapped around the cable conductor connection part and then heat-fused and integrated. The so-called heat molding method, which consists of
Although there is an extrusion molding method, if the cable to be connected is of the ultra-high voltage class, for example, 154 KV, 27 arc V class, the latter is more suitable in terms of reliability and electrical characteristics.

このため、最近のこの種ケーブル高電圧化に伴なし、後
者の手段に関しての実用化が急務となり現在その開発が
さかんに進められている実状である。
For this reason, with the recent increase in the voltage of this type of cable, there is an urgent need to put the latter method into practical use, and its development is currently being actively progressed.

一方、ケーブル線路においては、これが長距離化すると
その外部半導電層に誘起される電圧が高くなると言う問
題があるため、接続部として外部半導電層を縁切りにし
た所謂絶縁形後続部が必要となる。しかるに、前記の押
出モールド成形方式において絶縁形接続部を作る手段は
、未だ開発されていない実状である。
On the other hand, in cable lines, there is a problem in that the voltage induced in the outer semiconducting layer increases as the distance increases, so a so-called insulated follow-on part, which cuts off the outer semiconducting layer, is required as a connection part. Become. However, in the extrusion molding method described above, a means for producing an insulated connection portion has not yet been developed.

本発明は、上述の点に鑑がみて為されたものであって、
その目的は、押出モールド成形方式において絶縁形接続
部を製造する方法を提供することにある。
The present invention has been made in view of the above points, and includes:
The aim is to provide a method for manufacturing insulated connections in an extrusion molding process.

すなわち「本発明の要旨は〜後述の絶縁補強体面上に外
部半導電層縁切り用突起部を形成するための凹部をそれ
自身の内面方向に形成してなる金型をケーブル導体接続
部上に被せる工程と「上誌金型内にケーブル絶縁体と同
質の絶縁材料を押出充填して上記ケーブル導体接続部上
に外部半導電層縁切り用突起部付絶縁補強体を成形する
工程と「上記絶縁補強体の周上に縁切り用突起部を残し
て外部半導電層を成形する工程とよりなることを特徴と
するプラスチック絶縁電力ケーブル接続部の形成法にあ
る。
In other words, ``The gist of the present invention is to cover a cable conductor connecting portion with a mold having a recess formed in the inner surface thereof for forming a protrusion for cutting the edge of an external semiconducting layer on the surface of an insulating reinforcing body, which will be described later. The process of extruding and filling an insulating material of the same quality as the cable insulator into the above-mentioned mold and forming an insulating reinforcing body with protrusions for edge cutting of the external semiconducting layer on the above-mentioned cable conductor connection part; A method for forming a plastic insulated power cable connection part, comprising the steps of: molding an outer semiconducting layer while leaving edge cutting protrusions on the circumference of the body.

なお「上記外部半導電層を成形する手段として具体的に
は「例えば、まず「絶縁補強体の周上に、架橋剤入り半
導電性ゴム。
Specifically, as a method for forming the external semiconductive layer, for example, first, a crosslinking agent-containing semiconductive rubber is applied around the insulating reinforcing body.

プラスチックを押し出すか、架橋剤入り半導電性ゴム。
プラスチックテープを巻き付けるか、架橋剤入り半導電
性ゴム・プラスチック塗料を塗布するか「あるいは架橋
剤入り半導電性ゴム。プラスチック熱収縮チューブを挿
適するかし「次いでこれを空気中あるいは不活性ガス中
で加熱して架橋化せしめると共に上記絶縁補強体に対し
て結着させる方法がある。次に「添付の図面を参照しな
がら本発明形成法の一実施例を説明する。まず、第1図
に示す如く、接続すべき架橋化ポリエチレン絶縁ビニル
シース電力ケーブル(以下CVケーブルと言う。)1,
1′のシース2,2′および絶縁体3,3′等を端部に
おいて所定の区間だ仇I項次段剥し、次いでこうして露
出せしめた端部導体4,4′同志を所定の導体接続管5
により接続し、更に上記端部導体4,4′および導体接
続管5の周上に、内部半導電層6を設ける。なお、内部
半導電層6としては、半導電性ポリオレフィン熱収縮チ
ューブあるいは半導電性ポリオレフィンテープ(乃至は
シート)の巻付層を加熱処理したモールド成形体が好適
である。次に、後述の絶縁補強体面上に外部半導電層縁
切り用突起部を形成するための凹部7をそれ自身の内面
周方向に形成してなる金型8を両ケーブルの絶縁体3,
3′上に亘つてケーブル導体接続部上に被せる。
Extruded plastic or semiconductive rubber with crosslinking agent.
Wrap it with plastic tape, apply semiconductive rubber or plastic paint containing a crosslinking agent, or insert semiconductive rubber containing a crosslinking agent. Then, place it in air or an inert gas. There is a method in which the insulating reinforcing body is bonded to the insulating reinforcing body by heating to crosslink it.Next, an embodiment of the forming method of the present invention will be explained with reference to the attached drawings. As shown, the cross-linked polyethylene insulated vinyl sheathed power cable (hereinafter referred to as CV cable) to be connected 1.
The sheaths 2, 2', insulators 3, 3', etc. of 1' are peeled off in a predetermined section at the end, and then the exposed end conductors 4, 4' are connected to a predetermined conductor connection pipe. 5
Further, an internal semiconducting layer 6 is provided on the periphery of the end conductors 4, 4' and the conductor connecting tube 5. The internal semiconductive layer 6 is preferably a molded product obtained by heat-treating a wrapped layer of a semiconductive polyolefin heat-shrinkable tube or a semiconductive polyolefin tape (or sheet). Next, a mold 8 having a recess 7 formed in the inner circumferential direction for forming a protrusion for cutting the edge of the external semiconducting layer on the surface of the insulation reinforcing body, which will be described later, is placed on the insulator 3 of both cables.
3' over the cable conductor connection.

金型8は「二つ割で構成されていると共に、その周上に
は加熱ヒータ9を具備している。次に金型8にラム装置
翼0および押出機亀1を直結すると共に、当該金型8を
加熱ヒータ9で所定温度に子熱する。
The mold 8 is composed of two halves, and is equipped with a heater 9 on its circumference.Next, the ram device blade 0 and the extruder turtle 1 are directly connected to the mold 8, and the The mold 8 is heated to a predetermined temperature using a heater 9.

次に、押出機軍1を用いて「ケーブル絶縁体3,3′と
同質の架橋剤入りポリエチレン絶縁材料12を金型8内
に押出充填する。
Next, using the extruder 1, a crosslinking agent-containing polyethylene insulating material 12 having the same quality as the cable insulators 3 and 3' is extruded and filled into the mold 8.

押出充填は、金型8のオーバーフロー孔,3及びラム装
置10より上記材料亀2がオーバーフローするまで行な
つ。次に金型8を、充填されたポリエチレン絶縁材料1
2が架橋化するに必要な温度に昇溢して、これを架橋化
せしめた後、金型8を冷却して上記材料12を固化せし
め、もつて所定の外部半導電層縁切り用突起部軍母付絶
縁補強体15を成形する。
The extrusion filling is continued until the material tortoise 2 overflows from the overflow hole 3 of the mold 8 and the ram device 10. Next, mold 8 is filled with polyethylene insulation material 1
2 rises to a temperature necessary for crosslinking, and after crosslinking, the mold 8 is cooled to solidify the material 12, and then a predetermined outer semiconducting layer edge cutting protrusion group is formed. The base insulating reinforcing body 15 is molded.

次に、金型8を外し、そして第2図に示すように、絶縁
補強体15の周上に縁切り用突起部14をも残して外部
半導電層16を成形する。
Next, the mold 8 is removed, and as shown in FIG. 2, the outer semiconductive layer 16 is molded, leaving the edge-cutting protrusions 14 on the periphery of the insulating reinforcing body 15.

外部半導電層i6は、架橋剤入りポリエチレンを押し出
し、次いでそれを空気中あるいは不活性ガス中で加熱し
て架橋化せしめると共に絶縁補強体15に対して結着さ
せることで成形される。次に「縁切り用突起部i4の周
上に「異状電圧浸入時の表面沿閃を防止するための絶縁
補強層17を設ける。
The outer semiconductive layer i6 is formed by extruding polyethylene containing a crosslinking agent, then heating it in air or an inert gas to crosslink it, and bonding it to the insulating reinforcement 15. Next, an insulating reinforcing layer 17 is provided on the periphery of the edge-cutting protrusion i4 to prevent surface flashing when an abnormal voltage penetrates.

絶縁補強層17は、ポリオフィン絶縁コンパウンドによ
る加熱モールド成形、あるいはポリオフィン絶縁テープ
の纏巻による構成が実用に適っている。なお、第3図は
、本発明の他の実施例を示すものである。
Practically, the insulation reinforcing layer 17 is formed by heat molding a polyopine insulation compound or by wrapping a polyopine insulation tape. Note that FIG. 3 shows another embodiment of the present invention.

縁切り用突起部’4」の表面閃絡を防止するには、当該
部分の表面絶縁距離を長くするのが良い。この点に盤が
み、金型8′の内面に凹部7′を設け、更にこの中に所
定の曲率を有する曲率部成形体18を挿入した。
In order to prevent surface flashing of the edge cutting protrusion '4', it is preferable to lengthen the surface insulation distance of this part. At this point, a recess 7' was formed on the inner surface of the mold 8', and a curvature molded body 18 having a predetermined curvature was inserted into the recess 7'.

曲率部成形体1‐8は、二つ割以上の複数分割形半導電
性ゴム・プラスチック成形体もしくは金属成形体が用い
られる。絶縁補強体15′を成形した後、金型8′を外
し、然る後、曲率部成形体18が金属の場合にはこれを
取り除き、半導電性ゴム・プラスチックの場合には必要
に応じてこれを取り除き、次いで、前記実施例と同様に
して外部半導電層(特に図示しない。
As the curvature portion molded body 1-8, a multi-segmented semiconductive rubber/plastic molded body or a metal molded body having two or more parts is used. After molding the insulating reinforcing body 15', the mold 8' is removed, and then, if the curved part molded body 18 is made of metal, it is removed, and if it is made of semiconductive rubber or plastic, it is removed as necessary. This is removed, and then an outer semiconducting layer (not specifically shown) is formed in the same manner as in the previous embodiment.

)を設けるものである。斯様にして遂行される本実施例
形成法によれば、外部半導電層縁切り用突起部を形成す
るための凹部をそれ自身の内面周方向に形成してなる金
型を準備することで、簡単にして且つ所定の絶縁形接続
部製作することができる。
). According to the forming method of the present embodiment carried out in this manner, by preparing a mold in which a recess for forming a protrusion for cutting the edge of the external semiconducting layer is formed in the inner circumferential direction of the mold itself, It is possible to easily manufacture a predetermined insulated connection part.

しかも、縁切り用突起部においては、絶縁補強体と同様
押出モールド体であり、従って、電気性能に優れている
ことはもとより信頼性にも優れている。
Moreover, the edge cutting protrusion is an extrusion molded body like the insulating reinforcing body, and therefore not only has excellent electrical performance but also excellent reliability.

このように、本発明は、わずかに改造した金型を用いる
ことで遂行されるものであって、従って、きわめて実用
性‘こ適う形成法である。
Thus, the present invention is accomplished using a slightly modified mold, and is therefore a highly practical forming method.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図は、本発明プラスチック絶縁電力ケ
ーブル接続部形成法の一実施例説明図、第3図は本発明
プラスチック絶縁電力ケーブル接続部形成法の他の実施
例説明図である。 1,1′:CVケーブル、2,2′:ケーブルシース、
3,3′:ケーブル絶縁体、4,4′:ケーブル導体、
5:導体接続管、6:内部半導電層、7:凹部、8:金
型、9:加熱ヒータ、10:ラム装置、11:押出機、
12:絶縁材料、13:オーバーフロー孔、14:縁切
り用突起部、15:絶縁補強体、16:外部半導雷層、
17:絶縁補強層。 が′函 才ど図 才3図
1 and 2 are explanatory views of one embodiment of the method for forming a plastic insulated power cable connection portion of the present invention, and FIG. 3 is an explanatory view of another embodiment of the method of forming a plastic insulated power cable connection portion of the present invention. 1, 1': CV cable, 2, 2': cable sheath,
3, 3': Cable insulator, 4, 4': Cable conductor,
5: conductor connection tube, 6: internal semiconductive layer, 7: recess, 8: mold, 9: heater, 10: ram device, 11: extruder,
12: Insulating material, 13: Overflow hole, 14: Edge cutting protrusion, 15: Insulating reinforcement, 16: External semiconductor lightning layer,
17: Insulating reinforcement layer. Ga'kansai do zusai 3 drawings

Claims (1)

【特許請求の範囲】 1 後述の絶縁補強体表面に外部半導電層縁切り用突起
部を形成するための凹部をそれ自身の内面周方向に形成
してなる金型をケーブル導体接続部上に被せる工程と、
上記金型内にケーブル絶縁体と同質の絶縁材料を押出充
填して上記ケーブル導体接続部上に外部半導電層縁切り
用突起部付絶縁補強体を成形する工程と、上記絶縁補強
体の周上に縁切り用突起部を残して外部半導電層を成形
する工程とよりなることを特徴とするプラスチツク絶縁
電力ケーブル接続部の形成法。 2 成形された絶縁補強体の周上に縁切り用突起部を残
して架橋剤入り半導電性ゴム・プラスチツクを押し出す
か、架橋剤入り半導電性ゴム・プラスチツクテープを巻
き付けるか、架橋剤入り半導電性ゴム・プラスチツク塗
料を塗布するか、あるいは架橋剤入り半導電性ゴム・プ
ラスチツク熱収縮チユーブを挿通するかし、次いでこれ
を空気中あるいは不活性ガス中で加熱して架橋化せしめ
ると共に、上記絶縁補強体に対して結着させて外部半導
電層を形成するように特許請求の範囲第1項記載のプラ
スチツク絶縁電力ケーブル接続部の形成法。
[Scope of Claims] 1. A mold having a recess formed in the inner circumferential direction of the insulating reinforcing body to form a protrusion for cutting the edge of the external semiconducting layer on the surface of the insulating reinforcing body, which will be described later, is placed over the cable conductor connection part. process and
A step of extruding and filling an insulating material of the same quality as the cable insulator into the mold to form an insulating reinforcing body with a protrusion for edge cutting of the external semiconducting layer on the cable conductor connection part, 1. A method of forming a plastic insulated power cable connection comprising the steps of: forming an outer semiconducting layer while leaving an edge cutting protrusion. 2 Extrude semiconductive rubber/plastic containing a crosslinking agent while leaving a protrusion for edge cutting on the circumference of the formed insulation reinforcement, wrap semiconductive rubber/plastic tape containing a crosslinking agent, or wrap semiconductive rubber/plastic containing a crosslinking agent. Either by applying a semiconductive rubber/plastic paint or by inserting a semiconductive rubber/plastic heat shrink tube containing a crosslinking agent, this is then heated in air or an inert gas to crosslink it, and the above insulation is A method of forming a plastic insulated power cable connection as claimed in claim 1 so as to bond it to a reinforcement to form an outer semiconducting layer.
JP56157861A 1981-10-03 1981-10-03 Method of forming plastic insulated power cable connections Expired JPS6030171B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56157861A JPS6030171B2 (en) 1981-10-03 1981-10-03 Method of forming plastic insulated power cable connections

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56157861A JPS6030171B2 (en) 1981-10-03 1981-10-03 Method of forming plastic insulated power cable connections

Publications (2)

Publication Number Publication Date
JPS5858812A JPS5858812A (en) 1983-04-07
JPS6030171B2 true JPS6030171B2 (en) 1985-07-15

Family

ID=15658985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56157861A Expired JPS6030171B2 (en) 1981-10-03 1981-10-03 Method of forming plastic insulated power cable connections

Country Status (1)

Country Link
JP (1) JPS6030171B2 (en)

Also Published As

Publication number Publication date
JPS5858812A (en) 1983-04-07

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