JPH0442719A - Forming method of mold stress cone - Google Patents

Forming method of mold stress cone

Info

Publication number
JPH0442719A
JPH0442719A JP14671790A JP14671790A JPH0442719A JP H0442719 A JPH0442719 A JP H0442719A JP 14671790 A JP14671790 A JP 14671790A JP 14671790 A JP14671790 A JP 14671790A JP H0442719 A JPH0442719 A JP H0442719A
Authority
JP
Japan
Prior art keywords
semiconductor
tape
stress cone
cone
cable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14671790A
Other languages
Japanese (ja)
Other versions
JP2999801B2 (en
Inventor
Toshio Sekine
関根 敏男
Shigenori Nakane
中根 重則
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SWCC Corp
Original Assignee
Showa Electric Wire and Cable Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Electric Wire and Cable Co filed Critical Showa Electric Wire and Cable Co
Priority to JP14671790A priority Critical patent/JP2999801B2/en
Publication of JPH0442719A publication Critical patent/JPH0442719A/en
Application granted granted Critical
Publication of JP2999801B2 publication Critical patent/JP2999801B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To form a mold stress cone having excellent electrical characteristics by fitting a cone type semiconductor to the tapered face on the cable sheath end side of a body applied with an insulation tape and then thermally molding the taped body and the semiconductor integrally through a single heating process. CONSTITUTION:An insulating polyethylene tape 13 is wound, in spindle shape, around a cable insulator 12. A cone type semiconductor 17 having a tapered face 15a approximately corresponding to the tapered face 13a of the spindle type polyethylene tape and rounded at the tip thereof is formed. The semiconductor 17 is then fitted to the end of the spindle type cable sheath and fitted tightly to the tapered face 13 through thermal contraction. An insulating polyethylene tape 20 is then applied on the semiconductor 17 and the cylindrical part of the polyehtylene taped layer 13 and subjected to thermal molding. Consequently, taped layers are fused integrally to make round the tip of the semiconductor layer thus improving the electrical characteristics.

Description

【発明の詳細な説明】 C発明の目的] (産業上の利用分野) 本発明は、たとえば架橋ポリエチレン絶縁ケーブル等の
中間接続部や終端接続部等において、ケーブル絶縁体外
周に電解緩和を目的として形成されるモールドストレス
コーンの形成方法に関する。
[Detailed Description of the Invention] CObject of the Invention] (Industrial Application Field) The present invention is intended for the purpose of electrolytic relaxation on the outer periphery of a cable insulator, for example, at an intermediate connection portion or a terminal connection portion of a cross-linked polyethylene insulated cable, etc. The present invention relates to a method for forming a mold stress cone.

(従来の技術) 従来から、架橋ポリエチレン絶縁ケーブル(以下、C■
ケーブルと称する。)の終端接続部においては、電解緩
和のためにケーブル端末の絶縁体外周に架橋ポリエチレ
ン等を用いてモールドストレスコーンを形成することが
行われている。
(Conventional technology) Conventionally, cross-linked polyethylene insulated cables (hereinafter referred to as C
It is called a cable. ), a molded stress cone is formed using cross-linked polyethylene or the like on the outer periphery of the insulator at the cable end to alleviate electrolytic properties.

第5図はこのようなモールドストレスコーンの構造例を
示す断面図で、端部を段剥して露出させたケーブルの絶
縁体1外周に紡錘状のモールド絶縁補強体2か設けられ
、このケーブルシース端3側テーパ面2aから円筒状部
2bにかけて半導電層3か設けられ、さらにこの半導電
層3がら絶縁補強体2にかけて絶縁層4が形成されてい
る。
FIG. 5 is a cross-sectional view showing an example of the structure of such a molded stress cone, in which a spindle-shaped molded insulation reinforcing body 2 is provided around the outer periphery of the cable insulator 1 which is exposed by peeling off the end of the cable. A semiconductive layer 3 is provided from the tapered surface 2a on the end 3 side to the cylindrical portion 2b, and an insulating layer 4 is further formed from the semiconductive layer 3 to the insulating reinforcing body 2.

そしてこのようなモールドストレスコーンては、同図に
示したように、半導電層3の先端部への局部的な電解の
集中を防止するために、絶縁補強体2の形状をテーバ面
2a先端に内側に湾曲する丸みRが付けられた紡錘状と
し、この丸み部分を埋めるようにテーバ面2a上に半導
電層3を形成している。
In such a mold stress cone, as shown in the figure, the shape of the insulating reinforcing body 2 is changed to the tip of the Taber surface 2a in order to prevent local concentration of electrolyte on the tip of the semiconducting layer 3. The semiconducting layer 3 is formed on the Taber surface 2a so as to fill this rounded portion.

このため従来、その形成にあたっては、第6図に示すよ
うに絶縁テープをケーブルの絶縁体1外周に紡錘状に巻
き付けた後、テーパ面2aの先端部外周に丸み付は用の
成形金具5を装着して第1回目の加熱を行い、これによ
って丸み付けされた紡錘状の絶縁補強体2を形成した後
、そのテーバ面2a上に半導電テープを巻き付け、さら
にこれらの上に絶縁テープを巻き付けて第2回目の加熱
を行い各テープ巻回層間を一体に融着させる方法が採ら
れていた。
For this reason, conventionally, in its formation, an insulating tape is wound around the outer periphery of the cable insulator 1 in a spindle shape, as shown in FIG. After it is attached and heated for the first time, thereby forming a rounded spindle-shaped insulating reinforcement body 2, a semiconductive tape is wrapped on the tapered surface 2a, and an insulating tape is further wrapped on these. A method has been adopted in which a second heating is performed to fuse the tape-wound layers together.

しかしながらこのような従来の方法では、加熱成形工程
を、絶縁補強体2を形成する際と最終成形の際の2度行
わねばならないうえ、半導電層3はテープの巻き付けた
けて形成しているため、先端の丸みRか平滑性に欠は初
期の電気特性が得られないという難点があった。
However, in such a conventional method, the heating molding process has to be performed twice, once when forming the insulating reinforcement body 2 and when final molding, and the semiconductive layer 3 is formed by wrapping the tape around it. However, due to the lack of roundness or smoothness at the tip, initial electrical characteristics could not be obtained.

(発明が解決しようとする課8) このように従来のモールドストレスコーンの形成方法で
は、半導電層の先端に電解の集中を防止するための丸み
付けを行うために、加熱成形工程を2度行わねばならず
作業性が悪いうえ、平滑性の良い丸みが形成されず初期
の電気特性が得られないという難点があった。
(Issue 8 to be solved by the invention) In this way, in the conventional mold stress cone forming method, the heating molding process is performed twice in order to round the tip of the semiconductive layer to prevent concentration of electrolyte. In addition to the poor workability, it is difficult to form a rounded surface with good smoothness, making it impossible to obtain the initial electrical characteristics.

本発明はこのような従来の難点を解決するためになされ
たもので、1度の加熱工程で半導電層先端に平滑で形状
も良好な丸みが形成された電気特性に優れたモールドス
トレスコーンを形成することかできる方法を提供するこ
とを目的とする。
The present invention has been made to solve these conventional problems, and provides a molded stress cone with excellent electrical properties in which a smooth, well-shaped, rounded tip of the semiconducting layer is formed in a single heating process. The purpose is to provide a method that can be configured.

[発明の構成コ (課題を解決するための手段) 本発明は、ケーブル端末の絶縁体外周に、絶縁テープを
ほぼ紡錘状に巻回し、この絶縁テープ巻装体のケーブル
シース端側テーパ面上に、あらかじめ前記テーパー面に
合致可能なテーパー面を内側に有するコーン状に成形さ
れ、かつその先端側縁に所定の丸みが設けられた半導電
体を嵌着し、さらにこの半導電体上から前記絶縁テープ
巻装体上にかけて絶縁テープを巻回した後、−度の加熱
工程で1度の加熱工程でこれらの各絶縁テープ巻装体と
半導電体を一体に加熱モールドすることを特徴とする。
[Structure of the Invention (Means for Solving the Problems)] The present invention involves winding an insulating tape around the outer periphery of an insulator at a cable end in a substantially spindle shape, and then winding an insulating tape on the tapered surface of the end side of the cable sheath of the insulating tape wrapping body. Then, a semi-conductor which has been formed in advance into a cone shape with a tapered surface on the inside that can match the tapered surface and whose tip side edge has a predetermined roundness is fitted, and further, from above this semi-conductor, After winding the insulating tape over the insulating tape wrapping, the insulating tape wrapping and the semiconductor are integrally heat-molded in a one-degree heating step. do.

(作用) 本発明方法では、加熱工程が最終工程における 1度た
けてよく、作業性が向上する。また半導電層先端の丸み
は表面が平滑で曲率の小さい形状に形成することができ
るので電解緩和特性の向上したモールドストレスコーン
を形成することができる。
(Function) In the method of the present invention, the heating step may be repeated once in the final step, improving workability. Further, since the rounded tip of the semiconducting layer can be formed into a shape with a smooth surface and a small curvature, a mold stress cone with improved electrolytic relaxation characteristics can be formed.

(実施例) 次に本発明の実施例を図面を用いて説明する。(Example) Next, embodiments of the present invention will be described using the drawings.

第1図乃至第4図は本発明の一実施例にかかるポリエチ
レンモールドストレスコーンの形成過程を示す縦断面図
である。
1 to 4 are longitudinal sectional views showing the process of forming a polyethylene molded stress cone according to an embodiment of the present invention.

本発明においては、第1図に示すように、まず、Cvケ
ーブル終端部11を段剥して露出させたケブル絶縁体1
2の外周に、絶縁性ポリエチレンテープ13を所定の厚
さの紡錘状に巻回する。
In the present invention, as shown in FIG.
An insulating polyethylene tape 13 is wound around the outer periphery of 2 in a spindle shape with a predetermined thickness.

一方、第2図に示すように、この紡錘状の絶縁性ポリエ
チレンテープ巻回層13のケーブルシース端14側テー
パ面13aにほぼ対応するテーパ面15aを有しその先
端部に形成すべき半導電層の丸みRに合致する湾曲面1
5bが形成された成形面15を有する金型16を用いて
、先端部に所定の丸みRを有するたコーン状の半導電体
17を成形する。
On the other hand, as shown in FIG. 2, the spindle-shaped insulating polyethylene tape wound layer 13 has a tapered surface 15a that substantially corresponds to the tapered surface 13a on the cable sheath end 14 side, and a semiconducting conductor to be formed at the tip thereof. Curved surface 1 that matches the roundness R of the layer
A cone-shaped semiconductor 17 having a predetermined roundness R at the tip is molded using a mold 16 having a molding surface 15 with a shape 5b formed thereon.

すなわち成形面15のテーパ面1.5 a上から湾曲面
15b上にかけて、これらのほぼ2倍長の半導電性ポリ
エチレンからなる熱収縮チューブ]8をその一端をテー
パ面1.5 bの基端部に一致させて熱収縮させ、次い
でその湾曲面上がらテーパ面上にかけて半導電性ポリエ
チレンテープ19を所定の形状に巻き付けた後、第3図
に示すように、湾曲面15b側に残した熱収縮チューブ
18を折り返して熱収縮させ、しかる後これを金型16
がらはすしてコーン状の半導電体17を得る。
That is, from above the tapered surface 1.5a of the molding surface 15 to above the curved surface 15b, a heat-shrinkable tube made of semiconductive polyethylene with approximately twice the length of these tubes] 8 is connected with one end to the proximal end of the tapered surface 1.5b. After wrapping the semiconductive polyethylene tape 19 in a predetermined shape from the curved surface to the tapered surface, the heat shrinkage remaining on the curved surface 15b side is shown in FIG. The tube 18 is folded back and heat-shrinked, and then molded into the mold 16.
The cone-shaped semiconductor 17 is obtained by removing the waste.

このようにして得られた半導電体17を、第4図に示す
ように、先に形成した紡錘状の絶縁性ポリエチレンテー
ブ巻回層13のケーブルシース端14側テーバ面13上
に嵌挿させ、再度熱収縮させてテーパ面13に密着させ
る。
As shown in FIG. 4, the semiconductor 17 thus obtained is fitted onto the tapered surface 13 on the cable sheath end 14 side of the previously formed spindle-shaped insulating polyethylene tape winding layer 13. , heat-shrink it again to bring it into close contact with the tapered surface 13.

次いで、この半導電体17上から絶縁性ポリエチレンテ
ープ巻回層13の円筒部上にかけて再び絶縁性ポリエチ
レンテープ20を所定の厚さに巻回し、さらにこれらの
上に適宜抑えテープ(図示を省略)を巻いて加圧しつつ
加熱成形を行う。
Next, the insulating polyethylene tape 20 is again wound to a predetermined thickness from the semiconductor 17 to the cylindrical portion of the insulating polyethylene tape winding layer 13, and then an appropriate restraining tape (not shown) is applied over these. Roll it up and heat-form it while applying pressure.

この結果、各テープ巻回層間が一体に融着されて、半導
電層の先端部に丸みRが形成された電気特性の良好なポ
リエチレンモールドストレスコーンが形成される。
As a result, the tape winding layers are fused together to form a polyethylene molded stress cone with good electrical properties and a rounded radius formed at the tip of the semiconductive layer.

なお、半導電性ポリエチレンテープ19の代わりに外層
と同じ半導電性ポリエチレンからなる熱収縮チューブを
用いて半導電体17の内層部を形成するようにしてもよ
い。
Note that the inner layer portion of the semiconductor body 17 may be formed using a heat shrink tube made of the same semiconductive polyethylene as the outer layer instead of the semiconductive polyethylene tape 19.

また上記実施例では、CVケーブル終端部のモールドス
トレスコーンの形成方法について説明したか、本発明は
このような実施例に限定されるものではなく、他の各種
ゴム・プラスチックケーブルの中間接続部や終端接続部
等におけるモールドストレスコーンの形成方法として広
く適用することができる。
Furthermore, in the above embodiments, the method for forming a molded stress cone at the end of a CV cable has been described, but the present invention is not limited to such embodiments, and may be applied to intermediate connections of various other rubber/plastic cables. It can be widely applied as a method for forming a molded stress cone in a terminal connection portion, etc.

[発明の効果] 以上説明したように本発明方法によれば、あらかじめ成
形した半導電体を嵌着するようにしたので、加熱成形工
程が1度で済み作業性が向上する。また、その半導電体
先端には表面が平滑で曲率の小さな丸みを形成すること
かできるため、電気特性の向上したモールドストレスコ
ーンを形成することができる。
[Effects of the Invention] As explained above, according to the method of the present invention, since a pre-molded semiconductor is fitted, only one heat molding step is required, improving workability. Further, since the tip of the semiconductor can have a smooth surface and a rounded shape with a small curvature, it is possible to form a mold stress cone with improved electrical characteristics.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図乃至第4図は本発明の一実施例にかかるCVケー
ブル終端部のモールドストレスコーンの形成過程を示す
縦断面図、第5図は従来方法により形成されたモールド
ストレスコーンの構造を示す縦断面図、第6図は従来方
法によりモールドストレスコーンを形成する過程にある
ケーブル終端部を示す縦断面図である。 11・・・・・・・・・CVケーブル終端部12・・・
・・・・・・ケーブル絶縁体13.20・・・・・・絶
縁テープ巻回層13a・・・・・・・・・・・・絶縁テ
ープ巻回層のテーパ面 14・・・・・・・・・ケーブルシース端15・・・・
・・・・金型成形面 16・・・・・・・・・金型 17・・・・・・・・・半導電体 18・・・・・・・・半導電性熱収縮チューブ19・・
・・・・・・・半導電性テープR・・・・・・・・・・
・・半導電体の丸み第1図 第2図 ]2
1 to 4 are longitudinal cross-sectional views showing the process of forming a molded stress cone at the end of a CV cable according to an embodiment of the present invention, and FIG. 5 shows the structure of a molded stress cone formed by a conventional method. FIG. 6 is a vertical cross-sectional view showing a cable termination in the process of forming a molded stress cone by a conventional method. 11...CV cable terminal part 12...
......Cable insulator 13.20...Insulating tape winding layer 13a...Tapered surface 14 of insulating tape winding layer... ...Cable sheath end 15...
... Mold molding surface 16 ... Mold 17 ... Semiconductor 18 ... Semi-conductive heat shrink tube 19・
・・・・・・Semi-conductive tape R・・・・・・・・・・・・
...Roundness of semiconductors (Figure 1, Figure 2) 2

Claims (1)

【特許請求の範囲】[Claims] (1)ケーブル端末の絶縁体外周に、絶縁テープをほぼ
紡錘状に巻回し、この絶縁テープ巻装体のケーブルシー
ス端側テーパ面上に、あらかじめ前記テーパー面に合致
可能なテーパー面を内側に有するコーン状に成形され、
かつその先端側縁に所定の丸みが設けられた半導電体を
嵌着し、さらにこの半導電体上から前記絶縁テープ巻装
体上にかけて絶縁テープを巻回した後、1度の加熱工程
でこれらの各絶縁テープ巻装体と半導電体を一体に加熱
モールドすることを特徴とするモールドストレスコーン
の形成方法。
(1) Wrap an insulating tape around the insulator of the cable terminal in an almost spindle shape, and on the tapered surface of the cable sheath end side of this insulating tape wrapping body, in advance, attach a tapered surface that can match the tapered surface to the inside. Shaped into a cone with
A semiconductor having a predetermined roundness on its tip side edge is fitted, and an insulating tape is wound over the semiconductor and onto the insulating tape wrapping body, and then a single heating process is performed. A method for forming a molded stress cone, which comprises integrally heat-molding each of these insulating tape wrappings and a semiconductor.
JP14671790A 1990-06-05 1990-06-05 Mold stress cone forming method Expired - Lifetime JP2999801B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14671790A JP2999801B2 (en) 1990-06-05 1990-06-05 Mold stress cone forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14671790A JP2999801B2 (en) 1990-06-05 1990-06-05 Mold stress cone forming method

Publications (2)

Publication Number Publication Date
JPH0442719A true JPH0442719A (en) 1992-02-13
JP2999801B2 JP2999801B2 (en) 2000-01-17

Family

ID=15413955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14671790A Expired - Lifetime JP2999801B2 (en) 1990-06-05 1990-06-05 Mold stress cone forming method

Country Status (1)

Country Link
JP (1) JP2999801B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012220215A (en) * 2011-04-04 2012-11-12 Viscas Corp Withstand voltage test method for plant joint part of long power cable
JP2016144224A (en) * 2015-01-29 2016-08-08 住電機器システム株式会社 Insulation cylinder, cable termination connection structure, and open air termination connection part
CN113659494A (en) * 2021-08-18 2021-11-16 瑞邦电力科技有限公司 Preparation process of 10-35kV welding type cross-linked cable terminal

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012220215A (en) * 2011-04-04 2012-11-12 Viscas Corp Withstand voltage test method for plant joint part of long power cable
JP2016144224A (en) * 2015-01-29 2016-08-08 住電機器システム株式会社 Insulation cylinder, cable termination connection structure, and open air termination connection part
CN113659494A (en) * 2021-08-18 2021-11-16 瑞邦电力科技有限公司 Preparation process of 10-35kV welding type cross-linked cable terminal
CN113659494B (en) * 2021-08-18 2023-01-31 瑞邦电力科技有限公司 Preparation process of 10-35kV welding type cross-linked cable terminal

Also Published As

Publication number Publication date
JP2999801B2 (en) 2000-01-17

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