JPS602796B2 - thin film rf squid - Google Patents
thin film rf squidInfo
- Publication number
- JPS602796B2 JPS602796B2 JP56196067A JP19606781A JPS602796B2 JP S602796 B2 JPS602796 B2 JP S602796B2 JP 56196067 A JP56196067 A JP 56196067A JP 19606781 A JP19606781 A JP 19606781A JP S602796 B2 JPS602796 B2 JP S602796B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- squid
- holes
- inductance
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
Landscapes
- Measuring Magnetic Variables (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Description
【発明の詳細な説明】
本発明は、超伝導体リングの中に1つの弱結合を含み、
該弱結合が与えられた所定の磁束によってスイッチング
を行なう薄膜rfスクイドに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention includes one weak bond within a superconductor ring;
The present invention relates to a thin film RF SQUID that performs switching by a predetermined magnetic flux given the weak coupling.
このような薄膜rfスクイド‘こおいては、2つの穴と
これらの穴を結ぶ紬溝の途中に設けられた弱い結合部分
とを有する2穴形スクィドパターンが通常形成されてい
る。In such a thin film RF SQUID, a two-hole SQUID pattern is usually formed, which has two holes and a weak connection part provided in the middle of a pongee groove connecting these holes.
また、上記結合部分(いわゆるブリッジ形ジョゼフソン
接合)によって特性の優れたジョゼフソン素子を得るた
めには、使用する超電導体のコヒーレンス長程度の素子
寸法が必要であり、該素子寸法を満足させるため従来か
らフオトリソグラフィ技術のような微細加工技術が用い
られている。然し乍ら、上記従来例においては上記結合
部分の幅Wに比して上記細溝の幅に相当する上記結合部
分の長さ〆が長くなってしまい、次のような欠点を生ず
るという不都合があった。In addition, in order to obtain a Josephson device with excellent characteristics using the above-mentioned coupling portion (so-called bridge-type Josephson junction), the device size must be approximately the same as the coherence length of the superconductor used, and in order to satisfy the device size, Conventionally, microfabrication techniques such as photolithography techniques have been used. However, in the conventional example, the length of the connecting portion corresponding to the width of the narrow groove is longer than the width W of the connecting portion, resulting in the following disadvantages. .
すなわち、上記結合の自己ィンダクタンスが増加し、等
価回路としてみた場合上記結合部分に相当するジョゼフ
ソン接合に上記ィンダクタンスLが直列に付加されたよ
うになり、結果的にジョゼフソン接合の電流と位相の関
係がsin関数からずれてくるという欠点があった。本
発明はかかる状況に鑑みてなされたものであり、その目
的は、超伝導体IJングの自己ィンダクタンスが減少さ
せられるとともにジョゼフソン接合の自己ィンダクタン
スも減少させられて優れた特性を示す薄膜rfスクィド
を提供することにある。In other words, the self-inductance of the above-mentioned coupling increases, and when viewed as an equivalent circuit, it becomes as if the above-mentioned inductance L is added in series to the Josephson junction corresponding to the above-mentioned coupling part, and as a result, the current of the Josephson junction and There was a drawback that the phase relationship deviated from a sine function. The present invention has been made in view of such circumstances, and its purpose is to provide a thin film that exhibits excellent characteristics by reducing the self-inductance of superconductor IJ and also reducing the self-inductance of Josephson junction. Our goal is to provide rf squid.
以下、本発明について図を用いて詳細に説明する。Hereinafter, the present invention will be explained in detail using the drawings.
第1図は本発明実施例の分解斜視図であり、図中、1は
薄膜状超電導材料でなる薄膜スクィド、2は例えば平板
状の絶縁体、3は超電導材料でなるグランドプレーンで
ある。また、薄膜スクィド1には、第1および第2穴l
a,lbが設けられるとともにこれらの穴la,lbを
結ぶ細溝lc,1′cの途中にはジョゼフソン接合と呼
ばれる弱い結合部分ldが設けられている。更に、グラ
ンドプレ−ン3には、上記第1および第2の穴la,l
bに夫々対応するように第3および第4の穴3a,3b
が設けられるとともに、これらの穴3a,3bを結ぶ細
濯3c,3′cの途中には上記結合部分ldに対応する
ように例えば出島状の凸部3dが設けられている。また
、第2図は本発明実施例の使用状態を示す姿部断面図で
あり、図中、第1図と同一記号は同一意味をもたせて使
用し、ここでの重複説明は省略する。尚「 4は例えば
サファイア等でなる基板であり「該基板の上にグランド
ブレーン3、絶縁体2、および薄膜1が層状をなすよう
に固着されている。更に「第3図および第4図は夫々本
発明実施例の平面図および要部拡大平面図であり、図中
、第1と同一記号は同一意味をもたせて使用してここで
の重複説明は省略する。また、第3図および第4図にお
いて、破線で形成される部分は上記グランドプレーン3
を示している。尚、第4図は「第3図の要部5に相当す
る部分の拡大図である。以下、本発明実施例の動作にっ
て説明する。FIG. 1 is an exploded perspective view of an embodiment of the present invention, in which 1 is a thin film SQUID made of a thin film-like superconducting material, 2 is, for example, a flat insulator, and 3 is a ground plane made of a superconducting material. The thin film SQUID 1 also has first and second holes l.
a, lb are provided, and a weak connection portion ld called a Josephson junction is provided in the middle of the thin grooves lc, 1'c connecting these holes la, lb. Furthermore, the ground plane 3 is provided with the first and second holes la and l.
The third and fourth holes 3a, 3b correspond to the holes b, respectively.
In addition, a convex portion 3d, for example, in the shape of an island, is provided in the middle of the thin washers 3c, 3'c connecting these holes 3a, 3b so as to correspond to the above-mentioned connecting portion ld. Further, FIG. 2 is a cross-sectional view showing the state of use of the embodiment of the present invention. In the figure, the same symbols as in FIG. 1 are used with the same meanings, and repeated explanations will be omitted here. 4 is a substrate made of, for example, sapphire, on which a ground plane 3, an insulator 2, and a thin film 1 are fixed in a layered manner. These are a plan view and an enlarged plan view of essential parts of an embodiment of the present invention, respectively. In the figures, the same symbols as those in the first figure are used with the same meaning, and redundant explanation here will be omitted. In Figure 4, the part formed by the broken line is the ground plane 3.
It shows. Incidentally, FIG. 4 is an enlarged view of a portion corresponding to the main part 5 of FIG. 3.The operation of the embodiment of the present invention will be explained below.
上記構成からなる本発明の実施例において上記穴la,
lbおよび横溝軍c,1′cからなる超伝導体リングに
は、量子力学的効果によって譲りングを貴〈磁遠■が物
理的定数のみで定まる磁途童子■。の整数倍に固定され
ている。この状態で外部から磁界が加えられると上託り
ングにしやへい電流1が流れて上記りングの磁束■が常
に一定に保たれるがト上記結合部分ldが臨界電流値l
cを有するジョゼフソン接合であるため、上記磁界が増
加して1=lcとなると上記結合部分が持ちこたえきれ
ずに上記りング内へ磁速が侵入するようになる。また、
該磁遠の侵入によって上記しやへし、電流1が減少して
1<1。となり、上記りングは再び磁束量子■。の整数
倍の磁束を保持するようになる。このようにして外部か
ら加えられる磁界が一定の割合で増加していくのに対し
「上記りング内の磁束は磁束量子■。を単位として階段
状に増加するとともに、逆に上記磁界が減少するように
も上託りング内の磁束は階段状に減少するようになり、
結果的に上記磁界の変化に対して磁束量子■。を1周期
とした三角波の周期応答を示すようになる。ところで、
上記りングの自己インダクタンスL、上記磁束量子■。
、および上記臨界電流lcの間にま、下式【1’のよう
な関係が成立している。また、rfスクィドの固有ノイ
ズスペクトル密度Si■は、下式(2}のように与えら
れ、該式■と上式【1め)ら下式が(3)が導かれる。
(1)L1cご■。(i’ (L1c)2
S’功ご1.3x−−−X(多聖上)%(2)WRF
ICの。In the embodiment of the present invention having the above configuration, the holes la,
The superconductor ring consisting of lb, Yokomizo c, and 1'c has a magnetic field whose magnetic distance is determined only by physical constants due to quantum mechanical effects. is fixed to an integer multiple of . When a magnetic field is applied from the outside in this state, a current 1 flows through the upper ring, and the magnetic flux of the ring is always kept constant.
Since this is a Josephson junction having c, when the magnetic field increases to 1=lc, the coupling portion cannot withstand the force and the magnetic velocity enters into the ring. Also,
Due to the intrusion of the magnet, the current 1 decreases to 1<1. So, the above ring is again a magnetic flux quantum ■. It will hold a magnetic flux that is an integer multiple of . In this way, while the magnetic field applied from the outside increases at a constant rate, the magnetic flux inside the ring increases stepwise in units of magnetic flux quanta, and conversely, the magnetic field decreases. The magnetic flux within the superconducting ring begins to decrease in a stepwise manner,
As a result, the magnetic flux quantum ■ for the above change in magnetic field. It shows a periodic response of a triangular wave with one period as . by the way,
The self-inductance L of the ring above, and the magnetic flux quantum ■.
, and the above-mentioned critical current lc, a relationship as shown in the following equation [1' is established. Further, the intrinsic noise spectral density Si■ of the rf SQUID is given as shown in the following equation (2), and from the equation (2) and the above equation [1st], the following equation (3) is derived.
(1) L1c ■. (i' (L1c)2 S'Gogo 1.3x ---X (Many Saints)% (2) WRF
IC's.
SiはL (3)但し、
L:自己ィンダクタンス、lc:臨界電流Si′?:固
有ノイズスペクトル密度、■。Si is L (3) However,
L: self-inductance, lc: critical current Si'? : Intrinsic noise spectral density, ■.
:磁束量子 WRF:M角周波数 KB:ボルッマン定
数 T:絶体温度而して、本発明実施例においては上述
の如く、結合部分ldが絶縁体2を介して凸部3dと肴
設されているために、薄膜スクィドー単独の場合に比し
て、上記りングの自己ィンダクタンスが小さくなってい
る。: Magnetic flux quantum WRF: M angular frequency KB: Bormann constant T: Absolute temperature In the embodiment of the present invention, as described above, the coupling portion ld is provided with the convex portion 3d via the insulator 2. Therefore, the self-inductance of the ring is smaller than that of the thin film Squidow alone.
このため、上式‘1)からL→4・ならlc→大となり
「自己ィンダクタンスLが減少した分だけ臨界電流lc
が増加するようになる。また、上式{81からL→小な
らSi→小となり、自己ィンダクタンスLが減少した分
だけノイズも減少するようになる。以上詳しく説明した
ような本発明の実施例によれば、上誌臨界電流lcが増
加しているため、該臨界電流lcの調整が容易になると
いう利点を有する。Therefore, from the above equation '1), if L → 4, lc → becomes large, and "critical current lc increases by the amount that self-inductance L decreases.
will start to increase. Furthermore, from the above equation {81, if L→small, then Si→small, and the noise also decreases by the amount that the self-inductance L decreases. According to the embodiment of the present invention as described in detail above, since the critical current lc is increased, there is an advantage that the critical current lc can be easily adjusted.
また〜上述の如くノイズが減少するため、S/N比も著
しく改善されるという利点も有する。更に、前記従釆例
において前記結合部分の長さ〆が長い場合ふ第5図の回
路構成図に示す如く結合部分×に直列にィンダクタンス
いが入った等価回路となり、亙−V特性が理想的なジョ
ゼフソン接合から大きくずれていたが、本発明実施例に
よれば自己ィンダクタンスLoが超伝導グランドプレー
ンによって上述の如く減少するためt 重一V特性も理
想的なジョゼフソン接合の場合に近づくという利点も有
している。Furthermore, since noise is reduced as described above, there is also the advantage that the S/N ratio is significantly improved. Furthermore, in the subordinate example, if the length of the coupling part is long, an equivalent circuit with an inductance in series with the coupling part x is created as shown in the circuit configuration diagram in Figure 5, and the -V characteristic is ideal. However, according to the embodiment of the present invention, the self-inductance Lo is reduced by the superconducting ground plane as described above, so that the t-V characteristic also differs from that of an ideal Josephson junction. It also has the advantage of being closer.
第官図は本発明実施例の分解斜視図、第2図は本発明実
施例の使用状態を示す姿部断面図、第3図および第亀図
は夫々本発明実施例の平面図および要部拡大平面図v第
5図は従来例の等価回路図である。
重・・。
薄膜スクィド〜 2…絶縁体〜 3…グランドプレーン
、4…基板「 5…要部、軍a? lb,3a,3b…
穴「 亀c,1′c,3c亀3℃…横溝、ld…結合部
分〜 3d…凸部。弟′図
弟Z函
弟J顔
第4函
弟づ図The official drawing is an exploded perspective view of the embodiment of the present invention, FIG. 2 is a cross-sectional view of the state of use of the embodiment of the present invention, and FIG. An enlarged plan view v FIG. 5 is an equivalent circuit diagram of a conventional example. Heavy... Thin film SQUID ~ 2...Insulator~ 3...Ground plane, 4...Substrate 5...Main part, military a?lb, 3a, 3b...
Hole "Turtle c, 1'c, 3c Tortoise 3℃...Horizontal groove, ld...Joining part ~ 3d...Convex part. Younger brother' figure younger brother Z box younger brother J face 4th box younger brother's figure
Claims (1)
イドにおいて、2つの穴とこれらの穴を結ぶ細溝の途中
に設けられた弱い結合部分とを有する薄膜状超電導材料
でなる薄膜スクイドと、前記穴に夫々対応する2つの穴
とこれらの穴を結ぶ細溝の途中において前記結合部分に
対応するように設けられた凸部とを有する超電導材料で
なるグランドプレーンと、該グランドプレーンと前記薄
膜スクイドに狭着された平板状の絶縁体とを具備してな
る薄膜rfスクイド。1. In a thin film RF SQUID using a bridge-type Josephson element, a thin film SQUID made of a thin film-like superconducting material has two holes and a weak connection part provided in the middle of a narrow groove connecting these holes, and a ground plane made of a superconducting material having two corresponding holes and a convex portion provided in the middle of a narrow groove connecting these holes so as to correspond to the connecting portion; and a ground plane that is tightly attached to the thin film SQUID. A thin film RF SQUID comprising a flat plate-shaped insulator.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56196067A JPS602796B2 (en) | 1981-12-04 | 1981-12-04 | thin film rf squid |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56196067A JPS602796B2 (en) | 1981-12-04 | 1981-12-04 | thin film rf squid |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5896786A JPS5896786A (en) | 1983-06-08 |
JPS602796B2 true JPS602796B2 (en) | 1985-01-23 |
Family
ID=16351640
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56196067A Expired JPS602796B2 (en) | 1981-12-04 | 1981-12-04 | thin film rf squid |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS602796B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11790538B2 (en) | 2020-11-05 | 2023-10-17 | Powerarena Holdings Limited | Production line monitoring method and monitoring system thereof |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61132885A (en) * | 1984-12-01 | 1986-06-20 | Nippon Telegr & Teleph Corp <Ntt> | Dc bias quantum interferometer |
CN110111966A (en) * | 2019-06-12 | 2019-08-09 | 华北电力大学 | A kind of superconduction circle ring plate magnet based on flux pump excitation, preparation method and applications |
-
1981
- 1981-12-04 JP JP56196067A patent/JPS602796B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11790538B2 (en) | 2020-11-05 | 2023-10-17 | Powerarena Holdings Limited | Production line monitoring method and monitoring system thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS5896786A (en) | 1983-06-08 |
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