JPS5896786A - Thin film rf squid - Google Patents
Thin film rf squidInfo
- Publication number
- JPS5896786A JPS5896786A JP56196067A JP19606781A JPS5896786A JP S5896786 A JPS5896786 A JP S5896786A JP 56196067 A JP56196067 A JP 56196067A JP 19606781 A JP19606781 A JP 19606781A JP S5896786 A JPS5896786 A JP S5896786A
- Authority
- JP
- Japan
- Prior art keywords
- squid
- holes
- thin film
- ring
- ground plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
Landscapes
- Measuring Magnetic Variables (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、超伝導体リングの中に1つの弱結合を含み、
該弱結合が与えられた所定の磁束によってスイッチング
を行なう薄膜rfスクイドに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention includes one weak bond within a superconductor ring;
The present invention relates to a thin film RF SQUID that performs switching by a predetermined magnetic flux given the weak coupling.
このような薄膜rfスクイドにおいては、2つの穴とこ
れらの穴を結ぶ細溝の途中に設けられた弱い結合部分と
を有する2穴形スクイドパターンが通常形成されている
。また、上記結合部分(いわゆるブリッジ形ジョゼフソ
ン接合)によって特性の優れたジョゼフソン素子を得る
ためには、使用する超伝導体のコヒーレンス長程度の素
子寸法が必要であり、該素子寸法を満足させるため従来
からフォトリソグラフィ技術のような微細加工技術が用
いられている。In such a thin film RF SQUID, a two-hole SQUID pattern is usually formed, which has two holes and a weak connection part provided in the middle of a narrow groove connecting these holes. In addition, in order to obtain a Josephson device with excellent characteristics using the above-mentioned coupling portion (so-called bridge-type Josephson junction), the device size must be approximately the same as the coherence length of the superconductor used, and the device size must be satisfied. Therefore, microfabrication techniques such as photolithography techniques have been used for a long time.
然し乍ら、上記従来例においては上記結合部分の幅WK
比して上記細溝の幅に相当する上記結合部分の長さlが
長くなってしまい、次のような欠点を生ずるという不都
合があった。すなわち、上記結合部分の自己インダクタ
ンスLが増加し、等価回路としてみた場合上記結合部分
に相当するジョゼフソン接合に上記インダクタンスLが
直列に付加されたようになり、結果的にジョゼフソン接
合の電流と位相の関係がsin関数からずれてくるとい
う欠点があった。However, in the conventional example described above, the width WK of the joint portion
In comparison, the length l of the connecting portion corresponding to the width of the narrow groove becomes longer, resulting in the following disadvantages. In other words, the self-inductance L of the above-mentioned coupling part increases, and when viewed as an equivalent circuit, it becomes as if the above-mentioned inductance L was added in series to the Josephson junction corresponding to the above-mentioned coupling part, and as a result, the current of the Josephson junction and There was a drawback that the phase relationship deviated from a sine function.
本発明はかかる状況に鑑みてなされたものであシ、その
目的は、超伝導体リングの自己インダクタンスが減少さ
せられるとともにジョゼフソン接合の自己インダクタン
スも減少させられて優れた特性を示す薄膜rfスクイド
を提供することにある。The present invention has been made in view of the above circumstances, and its object is to reduce the self-inductance of the superconductor ring and the self-inductance of the Josephson junction, thereby providing a thin film RF SQUID that exhibits excellent characteristics. Our goal is to provide the following.
以下、本発明について図を用いて詳細に説明する。第1
図は本発明実施例の分解斜視図であシ、図中、1は薄膜
状超電導材料でなる薄膜スクイド、2は例えば平板状の
絶縁体、3は超電導材料でなるグランドプレーンである
。また、薄膜スクイド1には、第1および第2の穴1a
、 lbが設けられるとともにこれらの穴1a、 lb
を結ぶ細溝1c、 l’cの途中にはジョゼフソン接合
と呼ばれる弱い結合部分1dが設けられている。更に、
グランドプレーン3(では、上記第1および第2の穴1
a、 lbに夫々対応するように第3および第4の穴3
a、 3bが設けられるとともに、これらの穴3a、
3bを結ぶ細溝3c。Hereinafter, the present invention will be explained in detail using figures. 1st
The figure is an exploded perspective view of an embodiment of the present invention. In the figure, 1 is a thin film SQUID made of a thin film-like superconducting material, 2 is, for example, a flat insulator, and 3 is a ground plane made of a superconducting material. The thin film SQUID 1 also has first and second holes 1a.
, lb are provided and these holes 1a, lb
A weak connecting portion 1d called a Josephson junction is provided in the middle of the narrow grooves 1c and l'c that connect the two. Furthermore,
Ground plane 3 (then the first and second holes 1
The third and fourth holes 3 correspond to a and lb, respectively.
a, 3b are provided, and these holes 3a,
A narrow groove 3c connecting 3b.
3’cの途中には上記結合部分1dに対応するように例
えば出島状の凸部3dが設けられている。また、第2図
は本発明実施例の使用状態を示す要部断面図であシ、図
中、第1図と同一記号は同一意味をもたせて使用し、こ
こでの重複説明は省略する。In the middle of 3'c, a convex portion 3d, for example, in the shape of an island, is provided so as to correspond to the connecting portion 1d. Further, FIG. 2 is a sectional view of a main part showing the usage state of the embodiment of the present invention. In the figure, the same symbols as in FIG. 1 are used with the same meanings, and redundant explanation will be omitted here.
ランドプレーン3、絶縁体2、および薄膜1が層状をな
すように固着されている。更に、第3図および第4図は
夫々本発明実施例の平面図および要因中、
部拡大平面図でありご第11と同一記号は同一意味をも
たせて使用しここでの重複説明は省略する。A land plane 3, an insulator 2, and a thin film 1 are fixed in a layered manner. Further, FIGS. 3 and 4 are respectively a plan view of an embodiment of the present invention and an enlarged plan view of a part of the factor, and the same symbols as in No. 11 are used with the same meanings, and repeated explanations here will be omitted. .
また、第3図および第4図において、破線で形成される
部分は上記グランドプレーン5を示している。倚、第4
図は、第3図の要部5に相当する部分の拡大図である。Further, in FIGS. 3 and 4, the portion formed by the broken line indicates the ground plane 5. As shown in FIG.倚、4th
The figure is an enlarged view of a portion corresponding to the main part 5 of FIG. 3.
以下、本発明実施例の動作について説明する。The operation of the embodiment of the present invention will be described below.
上記構成からなる本発明の実施例において上記穴la、
’lbおよび横溝1c、 l’cから々る超伝導体リ
ングには、量子力学的効果によって該リングを貫く磁束
Φが物理的定数のみで定まる磁束量子螢。の整数倍に固
定されている。この状態で外部から磁界が加えられると
上記リングにじゃへい電流工が流れて上記リング内の磁
束Φが常に一定に保たれるが、上記結合部分1dが臨界
電流値Icを有するジョゼフソン接合であるため、上記
磁界が増加して(5)
I=Icとなると上記結合部分が持ちこたえきれずに上
記リング内へ磁束が侵入するようになる。また、該磁束
の侵入によって上記しゃへい電流■が減少してIII。In the embodiment of the present invention having the above configuration, the hole la,
The superconductor ring consisting of 'lb and transverse grooves 1c and l'c has a magnetic flux Φ in which the magnetic flux Φ penetrating the ring is determined by only physical constants due to quantum mechanical effects. is fixed to an integer multiple of . When a magnetic field is applied from the outside in this state, a blocking current flows through the ring and the magnetic flux Φ inside the ring is always kept constant, but the connecting portion 1d is a Josephson junction with a critical current value Ic. Therefore, when the above-mentioned magnetic field increases and becomes (5) I=Ic, the above-mentioned coupling part cannot withstand the above-mentioned coupling part and magnetic flux enters into the above-mentioned ring. Also, due to the intrusion of the magnetic flux, the above-mentioned shielding current (2) decreases to (III).
と々シ、上記リングは再び磁束量子もの整数倍の磁束を
保持するようになる。このようにして外部から加えられ
る磁界が一定の割合で増加していくのに対し、上記リン
グ内の磁束は磁束量子Φ。を単位として階段状に増加す
るとともに、逆に上記磁界が減少する場合にも上記リン
グ内の磁束は階段状に減少するようになシ、結果的に上
記磁界の変化に対して磁束量子伽を1周期とした三角波
の周期応答を示すようになる。ところで、上記リングの
自己インダクタンスL、上記磁束量子Φ。、および上記
臨界電流Ic0間には、下式ように与えられ、該式(2
)と上式(1)から下式(3)が導かれる。Eventually, the ring will again hold a magnetic flux that is an integer multiple of the magnetic flux quantum. In this way, while the magnetic field applied from the outside increases at a constant rate, the magnetic flux inside the ring is equal to the flux quantum Φ. The magnetic flux inside the ring increases in a stepwise manner as a unit, and conversely, when the magnetic field decreases, the magnetic flux inside the ring also decreases in a stepwise manner. It shows the periodic response of a triangular wave with one period. By the way, the self-inductance L of the ring and the magnetic flux quantum Φ. , and the critical current Ic0 is given as below, and the equation (2
) and the above equation (1) lead to the following equation (3).
LIc ”> Φ。
(す(4)
(↓)
SctLL(3)
但し、L:自己インダクタンス、IC:臨界電流(i)
。LIc”>Φ.
(S(4) (↓) SctLL(3) However, L: Self-inductance, IC: Critical current (i)
.
SJ 、固有ノイズスペクトル密度Φ
O
:磁束量子 WRF:rf角周波数 KB=ボルツマン
定数 T:給体温度
而して、本発明実施例においては上述の如く、結合部分
1dが絶縁体2を介して凸部3dと着設されているため
に、薄膜スクイド1単独の場合に比して、上記リングの
自己インダクタンスが小さくなっている。このため、上
式(1)からL→小ならre→大となり、自己インダク
タンスLが減少した分だけ臨界電流ICが増加するよう
Kなる。また、上式(3)がらL→小なら s(:i
)→小となル、自己インダクタンスLが減少した分だけ
ノイズも減少するようになる。SJ, characteristic noise spectral density Φ O: magnetic flux quantum WRF: rf angular frequency KB = Boltzmann constant T: feed temperature In the embodiment of the present invention, as described above, the coupling portion 1d is convex through the insulator 2. Since the ring is attached to the portion 3d, the self-inductance of the ring is smaller than that in the case where the thin film SQUID 1 is used alone. Therefore, from the above equation (1), if L→small, re→large, and K becomes such that the critical current IC increases by the amount that the self-inductance L decreases. Also, according to the above formula (3), if L → small, s(:i
) → As the self-inductance L decreases, the noise also decreases.
以上詳しく説明したような本発明の実施例によれば、上
記臨界電流Iaが増加しているため、該臨界電流Icの
調整が容易になるという利点を有する。According to the embodiment of the present invention as described in detail above, since the critical current Ia is increased, there is an advantage that the critical current Ic can be easily adjusted.
また、上述の如くノイズが減少するため、SlN比も著
しく改善されるという利点も有する。更に、前記従来例
において前記結合部分の長さtが長い場合、第5図の回
路構成図に示す如く結合部分(×)に直列にインダクタ
ンス(Lo)が入った等何回路とな、9、I−V特性が
理想的なジョゼフソン接合から大きくずれていたが、本
発明実施例によれば自己インダクタンスLoが超伝導グ
ランドプレーンによって上述の如く減少するため、I−
V特性も理想的なジョゼフソン接合の場合に近づくとい
う利点も有している。Furthermore, since the noise is reduced as described above, there is also the advantage that the SIN ratio is significantly improved. Furthermore, in the conventional example, if the length t of the coupling part is long, what kind of circuit is formed, such as an inductance (Lo) inserted in series with the coupling part (x), as shown in the circuit diagram of FIG. Although the I-V characteristics deviated greatly from the ideal Josephson junction, according to the embodiment of the present invention, the self-inductance Lo is reduced by the superconducting ground plane as described above, so that the I-V characteristics deviated greatly from the ideal Josephson junction.
It also has the advantage that the V characteristic approaches that of an ideal Josephson junction.
第1図は本発明実施例の分解斜視図、第2図は本発明実
施例の使用状態を示す要部断面図、第3図および第4図
は夫々本発明実施例の平面図および要部拡大平面図、第
5図は従来例の等価回路図である。
1・・・薄膜スクイド、2・・・絶縁体、3・・・グラ
ンドブレーン、4・・・基板、5・・・要部、la、
lb、 3a、 3b・・・穴、lc、 l’c、 3
c、 3’c ・・・横溝、1d・・・結合部分、3d
・・・凸部。FIG. 1 is an exploded perspective view of an embodiment of the present invention, FIG. 2 is a cross-sectional view of essential parts showing the usage state of the embodiment of the present invention, and FIGS. 3 and 4 are a plan view and essential parts of the embodiment of the present invention, respectively. The enlarged plan view, FIG. 5, is an equivalent circuit diagram of a conventional example. DESCRIPTION OF SYMBOLS 1...Thin film SQUID, 2...Insulator, 3...Ground brain, 4...Substrate, 5...Main part, la,
lb, 3a, 3b...hole, lc, l'c, 3
c, 3'c...Horizontal groove, 1d...Joining part, 3d
...Protrusion.
Claims (1)
において、2つの穴とこれらの穴を結ぶ細溝の途中に設
けられた弱い結合部分とを有する薄膜状超電導材料でな
る薄膜スクイドと、前記穴に夫々対応する2つの穴とこ
れらの穴を結ぶ細溝の途中において前記結合部分に対応
するように設けられた凸部とを有する超電導材料でなる
グランドプレーンと、該グランドプレーンと前記薄膜ス
クイドに挟着された平板状の絶縁体とを具備して碌る薄
1[rfスクイド。A thin film RF SQUID using a bridge-type Jita Zefson element includes a thin film SQUID made of a thin film-like superconducting material having two holes and a weak bonding part provided in the middle of a narrow groove connecting these holes; A ground plane made of a superconducting material having two corresponding holes and a convex part provided in the middle of a narrow groove connecting these holes so as to correspond to the coupling part, and sandwiched between the ground plane and the thin film SQUID. A thin 1 [RF SQUID] which is equipped with a plate-shaped insulator attached to the RF SQUID.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56196067A JPS602796B2 (en) | 1981-12-04 | 1981-12-04 | thin film rf squid |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56196067A JPS602796B2 (en) | 1981-12-04 | 1981-12-04 | thin film rf squid |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5896786A true JPS5896786A (en) | 1983-06-08 |
JPS602796B2 JPS602796B2 (en) | 1985-01-23 |
Family
ID=16351640
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56196067A Expired JPS602796B2 (en) | 1981-12-04 | 1981-12-04 | thin film rf squid |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS602796B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61132885A (en) * | 1984-12-01 | 1986-06-20 | Nippon Telegr & Teleph Corp <Ntt> | Dc bias quantum interferometer |
CN110111966A (en) * | 2019-06-12 | 2019-08-09 | 华北电力大学 | A kind of superconduction circle ring plate magnet based on flux pump excitation, preparation method and applications |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114519841A (en) | 2020-11-05 | 2022-05-20 | 百威雷科技控股有限公司 | Production line monitoring method and monitoring system thereof |
-
1981
- 1981-12-04 JP JP56196067A patent/JPS602796B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61132885A (en) * | 1984-12-01 | 1986-06-20 | Nippon Telegr & Teleph Corp <Ntt> | Dc bias quantum interferometer |
CN110111966A (en) * | 2019-06-12 | 2019-08-09 | 华北电力大学 | A kind of superconduction circle ring plate magnet based on flux pump excitation, preparation method and applications |
Also Published As
Publication number | Publication date |
---|---|
JPS602796B2 (en) | 1985-01-23 |
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