JPS60262123A - Optical shutter element - Google Patents

Optical shutter element

Info

Publication number
JPS60262123A
JPS60262123A JP11843284A JP11843284A JPS60262123A JP S60262123 A JPS60262123 A JP S60262123A JP 11843284 A JP11843284 A JP 11843284A JP 11843284 A JP11843284 A JP 11843284A JP S60262123 A JPS60262123 A JP S60262123A
Authority
JP
Japan
Prior art keywords
optical shutter
transmittance
electrodes
shutter element
plzt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11843284A
Other languages
Japanese (ja)
Inventor
Yasutaka Horibe
堀部 泰孝
Yoneji Takubo
米治 田窪
Nobue Tsujiuchi
辻内 伸恵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11843284A priority Critical patent/JPS60262123A/en
Publication of JPS60262123A publication Critical patent/JPS60262123A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/055Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect the active material being a ceramic
    • G02F1/0551Constructional details

Abstract

PURPOSE:To decrease the change in the transmittance of an optical shutter element with temp. by adhering light transmittable sintered ceramics consisting of different compsns. and having an electrooptic effect by a transparent adhesive agent each other and disposing transparent electrodes on both surfaces thereof. CONSTITUTION:Plural pieces of the transparent electrodes 44a, 44b are provided on both surfaces of a plate substrate made by adhering the light transmittable sintered ceramics 41, 42 consisting of PLZT (compsn. formed by substituting part of lead of lead titanate zirconate with lanthanum) having different compsn. by means of the transparent adhesive agent 43. The electrodes 44a, 44b are so disposed that the optical shutter parts on both surfaces to be formed by said electrodes do not overlap on each other. The change in the transmittance with temp. changes as well if the compsns. of the light transmittable sintered ceramics are different and therefore the change in the transmittance with temp. is smaller than the change when the light transmittable sintered ceramics is used in the form of a single plate.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は1血体の光シヤツタ素子に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to a single-body optical shutter element.

従来例の構成とその問題点 近年、機械的、電気的あるいは化学的な手段を用いて、
光の透jM ffiを制御する。いわゆる光シヤツタ素
子が、各分野で幅広く用いられている。なかでも、カー
効果などの電気光学効果を利用した固体光シヤツタ素子
は、応答性に優れ、小型化か可能となることから、カメ
ラのシャッタなど、^速性を必要とする光シャッタへの
応用が考えられている。現在、」1記光シャッタ素子と
して知られているものは、チタン酸ジルコン酸鉛の鉛の
一部をランタンで置換した組成物(以下PLZTと記述
する)等の透光性焼結磁器の平板−にに複数個の電極を
設けた基板を、」1記電極に電圧を印加した時に生しる
電界ベクトル方向に対し、土4S°の方向に偏光軸が互
いに直交するように、偏光板で挟んだ構造を有したもの
である。
Conventional configurations and their problems In recent years, mechanical, electrical, or chemical means have been used to
Controls the light transmission jM ffi. So-called optical shutter elements are widely used in various fields. Among these, solid-state optical shutter devices that utilize electro-optic effects such as the Kerr effect have excellent responsiveness and can be made smaller, making them ideal for application to optical shutters that require speed, such as camera shutters. is considered. Currently, what is known as the "1. optical shutter element" is a flat plate of translucent sintered porcelain such as a composition in which part of the lead in lead zirconate titanate is replaced with lanthanum (hereinafter referred to as PLZT). - A substrate on which a plurality of electrodes are provided is placed on a polarizing plate so that the polarization axes are perpendicular to each other in the direction of 4S° with respect to the direction of the electric field vector generated when a voltage is applied to the electrodes. It has a sandwiched structure.

以下図面を参照しながら、従来の光シヤツタ素子につい
て説明する。
A conventional optical shutter element will be described below with reference to the drawings.

第1図は、従来の光シヤツタ素子の構成図の例を示した
ものであり、11ばPLZT基板、12a。
FIG. 1 shows an example of a configuration diagram of a conventional optical shutter element, in which numeral 11 shows a PLZT substrate, and numeral 12a.

12bばPLZT基板」二に設けられた電極であり、1
2aは電圧印加用電極、12bは接地側電極である。1
3は偏光子、14は検光子であり、電圧印加用型441
2aと接地側電極12bに電圧を印加した時に生じる電
界ベクトルの方向に対し、±45°の方向に、偏光軸が
互いに直交するよう構成されている。このように構成さ
れた光シヤツタ素子の動作を以下に説lツ]する。
12b is an electrode provided on the PLZT substrate, and 1
2a is a voltage applying electrode, and 12b is a grounding electrode. 1
3 is a polarizer, 14 is an analyzer, and voltage application type 441
The polarization axes are configured to be orthogonal to each other in directions of ±45° with respect to the direction of an electric field vector generated when a voltage is applied to the electrode 2a and the ground electrode 12b. The operation of the optical shutter element constructed in this way will be explained below.

第1図の偏光子13の後部に設けられた光源15から光
を照射した場合、PLZT基板11−1−に形成された
電圧印加用電極12aと接地側電極12bの電極間に電
圧を印加しない場合は、電気光学効果による複屈折は生
じず、偏光子13及び検光子14によ−)で光は遮断さ
れるか、電圧を印加すると電気光学効果のカー効果によ
って複屈折を生じ、光の偏光状態が変化し、光か通過す
る。このような原理により、小型、高速の光シヤツタ素
子が口丁能となる。
When light is irradiated from the light source 15 provided at the rear of the polarizer 13 in FIG. 1, no voltage is applied between the voltage application electrode 12a and the ground electrode 12b formed on the PLZT substrate 11-1-. In this case, birefringence due to the electro-optic effect does not occur, and the light is blocked by the polarizer 13 and analyzer 14, or when a voltage is applied, birefringence occurs due to the Kerr effect of the electro-optic effect, and the light is The polarization state changes and light passes through. Based on this principle, a small, high-speed optical shutter element can be realized.

第2図は、第1図と同し電極構成がらなり、電1・i 
枠幅60μm、電極間隔50μm1電極材料かl□: 
In2O3−8nO2からなる光シヤツタ素子において
電圧を20ov印加した場合の透過率の温度変化を示し
たものである。なお使用したPLZT基板の組成は、P
LZTの一般式 %式%) において x=0.09 、 7−0.65を用いた。
Figure 2 has the same electrode configuration as Figure 1;
Frame width 60μm, electrode spacing 50μm 1 electrode material □:
This figure shows the change in transmittance with temperature when a voltage of 20 ov is applied to an optical shutter element made of In2O3-8nO2. The composition of the PLZT substrate used was P
In the general formula (%) of LZT, x=0.09, 7-0.65 was used.

(PLZTは通常La 、 Zr 、 Ti の比をと
り100x/100y/100Z と表示することから
、以下、例えばX=0.09 7−0.65の場合、す
なわちPbo、 910.09 (ZrO,e s T
 1 o、 s 、) 0.9775では9/65/3
5と記入する) 第2図から明らかなように、PLZT基板を単板で用い
た従来の光シヤツタ素子は、電極間に同一電圧を印加し
た場合、光ンヤノタの開口部の透過率は、温度変化によ
り犬きく左右される。従ってカメラのシャッタなど使用
温度域の広い装置にPLZTを用いた光シャッタを組み
こんだ場合、温度変化により透過率が大きく変化するこ
とがら、信頼性の面で大きな問題となる。
(Since PLZT usually takes the ratio of La, Zr, and Ti and expresses it as 100x/100y/100Z, below, for example, when X = 0.097-0.65, that is, Pbo, 910.09 (ZrO, e s T
1 o, s,) 0.9775 is 9/65/3
5) As is clear from Figure 2, in the conventional optical shutter element using a single PLZT substrate, when the same voltage is applied between the electrodes, the transmittance of the opening of the optical shutter changes as the temperature increases. Dogs are affected by changes. Therefore, when an optical shutter using PLZT is incorporated into a device that has a wide operating temperature range, such as a camera shutter, the transmittance changes greatly due to temperature changes, which poses a major problem in terms of reliability.

発明の目的 本発明は、光シヤツタ素子に関するものであり、従来の
光ツヤツタ素子に比べ、温度変化の小さな光シヤツタ素
子を提供することにある。
OBJECTS OF THE INVENTION The present invention relates to an optical shutter element, and an object of the present invention is to provide an optical shutter element that exhibits smaller temperature changes than conventional optical shutter elements.

発明の構成 本発明の光シヤツタ素子は、組成の異なる電気光学効果
を有する透光性焼結磁器を透明接着剤ではり合わせた平
面基板の両面に複数個の透明電極を有し、かつ、これら
の電極により形成される両面光ンヤノタ部が相互には重
ならないように各面に透明電極を配置することにより、
透過率の温度変化を低減しようとするものである。すな
わち本発明は、PLZTの組成か異なるとその透過率の
温度変化も異なることに着目した。たとえば、第3図は
第1図と同じ光シヤツタ構成からなり、PLZTとして
9/65/36組成、あるいは9、25 /65 / 
35 組成からなる平面基板を用い、電極幅50 Ji
m 、電極間隔50μm、電極材料がI n 20s 
Sn○2 からなる透明電極構成群を設けた光7ヤノタ
素子において、電圧を200V印加した場合の透過率の
温度依存性を示したものである。第3図かられかるよう
に、たとえばa点付近の場合には、g、 25 / 6
5 / 35 の方が9/e 5 / 3 sより透過
率が大きいが、温度が高いb点付近では、逆に9 / 
e 6/ 35の方が9・25/e s / 3 es
よりも透過率が大きくなる。従って、たとえば9.25
/65/35及び9/65/35のような組成の異なる
PLZT基板をはり合わせた平板の両面に、複数対の電
極を設けた本発明の光シヤツタ素子においては、a点か
らb点の温度領域では、温度が上昇するにつれて、9.
25 / 65/35の光シA= ツタ部の透過率は、
減少1頃向にあるが、他方の光シヤツタ部、すなわち9
/65/35では透過率は増加傾向にあるため、a点か
らb点の温度領域内では、従来の光シヤツタ素子のよう
にPLZT基板を単板で用いた場合に比べて、その平均
透過率の温度変化は改善される。なお、本発明による光
シャッタでは、はり合わされたPLZT基板の両面に設
けられた電極はそれぞれの面において、これらの電極に
より形成される光シヤツタ部が互いに重ならないように
設計しているため、互いに異なる組成のPLZT基板の
光シャノタの開口部を通過する光は、必ず他の組成のP
LZT基板に設けられた光シャッタの電極部を通過する
ため必ずI n 203S n○2などの透明電極を用
いる必盟がある。
Structure of the Invention The optical shutter element of the present invention has a plurality of transparent electrodes on both sides of a flat substrate made by laminating transparent sintered porcelain having electro-optic effects of different compositions with a transparent adhesive. By arranging transparent electrodes on each side so that the double-sided transparent parts formed by the electrodes do not overlap with each other,
This is intended to reduce temperature changes in transmittance. That is, the present invention focused on the fact that the temperature change in transmittance of PLZT varies depending on its composition. For example, Figure 3 has the same optical shutter configuration as Figure 1, with 9/65/36 composition as PLZT, or 9,25/65/
Using a flat substrate with a composition of 35, the electrode width is 50 Ji.
m, electrode spacing 50 μm, electrode material In 20s
This figure shows the temperature dependence of the transmittance when a voltage of 200 V is applied in a Hikari 7 Yanota device provided with a transparent electrode configuration group made of Sn○2. As can be seen from Figure 3, for example, in the vicinity of point a, g, 25 / 6
5/35 has a higher transmittance than 9/e 5/3s, but near point b where the temperature is high, 9/e
e 6/35 is 9.25/e s/3 es
The transmittance is greater than that. Therefore, for example 9.25
In the light shutter element of the present invention, in which multiple pairs of electrodes are provided on both sides of a flat plate made by gluing PLZT substrates with different compositions such as PLZT substrates such as /65/35 and 9/65/35, the temperature from point a to point b As the temperature increases in the region 9.
25/65/35 light beam A=The transmittance of the ivy part is
The decrease is towards 1, but the other light shutter part, that is, 9
/65/35, the transmittance tends to increase, so within the temperature range from point a to point b, the average transmittance is lower than when a single PLZT substrate is used as in a conventional optical shutter element. temperature change is improved. In addition, in the optical shutter according to the present invention, the electrodes provided on both sides of the bonded PLZT substrates are designed so that the optical shutter parts formed by these electrodes do not overlap each other on each surface, so that they do not overlap with each other. Light passing through the opening of the optical sensor in a PLZT substrate with a different composition always passes through the PLZT substrate with a different composition.
Since the light passes through the electrode part of the light shutter provided on the LZT substrate, it is necessary to use a transparent electrode such as In203Sn○2.

実施例の説明 以F本発明による光シヤツタ素子について具体1勺に説
1町する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The optical shutter device according to the present invention will now be described in detail.

La/Zr/Ti =9/65/35 .9.25/6
5/35のそれぞれ組成の異なるPLZT焼結磁器を酸
素気流中で、1200℃で20時間、ホノトプ1/スし
て製造した後、スライス、両面研磨処理を行ない、厚み
120μmの透光性基板を作製した。次にかかる組成の
異なるPLZT基板をブチラール樹脂で、はり合わせた
後、基板の両面に、I n 203 Sn2を蒸着し、
フォトリングラフィ技術を用いて、第4図に示すような
光シヤツタ素子を作成した。電極幅、電極間隔は共に5
0μmで″1パ 電極厚みは5000人とした。なお、
両面の電極配置は、第4図(b)に示すように、基板の
両面に複数個の透明電極を設け、これらの電極により形
成される各面の光シヤツタ部が、互いに重ならないよう
設計した。
La/Zr/Ti =9/65/35. 9.25/6
5/35 PLZT sintered porcelains with different compositions were honotopped for 20 hours at 1200°C in an oxygen stream, then sliced and double-sided polished to produce a 120 μm thick transparent substrate. Created. Next, after gluing these PLZT substrates with different compositions together using butyral resin, I n 203 Sn2 was vapor-deposited on both sides of the substrates,
An optical shutter element as shown in FIG. 4 was created using photolithography technology. Both electrode width and electrode spacing are 5.
The electrode thickness was 5000 people at 0 μm.
The electrode arrangement on both sides was designed so that a plurality of transparent electrodes were provided on both sides of the substrate, and the light shutter portions on each side formed by these electrodes did not overlap with each other, as shown in Figure 4(b). .

第4図(a)は本発明の構成図であり、41ば、9/6
5/35 組成からなるPLZ、T基板、42は9,2
5/65/35組成からなるpLZT基板、43は両端
板の接着層であり、44& 、44bは電圧印加用電極
、接地用電極である。45 、46加し、10℃から6
ociでの温度域における透過率を測定した結果を第6
図に示す。なお比較のために9 / 66 / 35及
び9.25/65/35組成からなる厚み250μmの
PLZT基板の両面に、それぞれ第4図と全く同様の電
極を設けた光シヤツタ素子を用いて、電圧200Vを印
加しながら10℃から60℃までの透過率の変化を調べ
た。その結果も第5図に示す。第5図から明らかなよう
に、本発明による光シヤツタ素子は、従来のPLZT基
板を中板で用いた光シヤツタ素子に比べて、広い温度域
で透過率の温度特性変化の低減をはかることができる。
FIG. 4(a) is a block diagram of the present invention.
5/35 PLZ consisting of composition, T substrate, 42 is 9,2
A pLZT substrate having a composition of 5/65/35, 43 is an adhesive layer of both end plates, 44&, 44b is a voltage application electrode and a grounding electrode. 45, 46 added, 10℃ to 6
The results of measuring the transmittance in the temperature range of oci are shown in the sixth section.
As shown in the figure. For comparison, we used a light shutter element in which electrodes similar to those shown in Fig. 4 were provided on both sides of a 250 μm thick PLZT substrate with compositions of 9/66/35 and 9.25/65/35, respectively, and the voltage was Changes in transmittance from 10°C to 60°C were investigated while applying 200V. The results are also shown in FIG. As is clear from FIG. 5, the optical shutter element according to the present invention can reduce the change in temperature characteristics of transmittance over a wide temperature range, compared to an optical shutter element using a conventional PLZT substrate as the middle plate. can.

発明の効果 以−ヒの説明から明らかなように、本発明による光ツヤ
ツタ素子は、従来の光シヤツタ素子に比べて、透過率の
温度変化を著しく低減することが可能となり、カメラの
シャッタなど、温度変化によゆ、光透過光1(tのバラ
ツキが問題となる固体シャッタ素子の実用化をはかるう
えで、極めて有効である。
As is clear from the explanation of the effects of the invention, the optical shutter element according to the present invention can significantly reduce the temperature change in transmittance compared to conventional optical shutter elements, and can be used for camera shutters, etc. This is extremely effective for the practical use of solid-state shutter elements, where variations in transmitted light 1 (t) are a problem due to temperature changes.

なお、本発明の実施例では、電気光学効果を有する透光
性焼結磁器としてPLZTを用いたが、PLZTと同様
の電気光学効果を示し、かつ透過率の温度変化の大きい
(Pb 、 La ) (Zr 、Nb)03系(以−
FPLZNと記述する) 、 (Pb 、Bi)(Zr
 、 Ti )03系(以下PBZTと記述する)なと
を用いても同様の効果か期待出来る。また、PLZT 
、PLZN 、PBZTを互いに組み合わせても同様の
効果か期待出来ることは言う′までもないことである。
In the examples of the present invention, PLZT was used as the translucent sintered porcelain having an electro-optic effect, but it shows the same electro-optic effect as PLZT and has a large temperature change in transmittance (Pb, La). (Zr, Nb) 03 series (hereinafter -
written as FPLZN), (Pb, Bi) (Zr
, Ti)03 series (hereinafter referred to as PBZT), similar effects can be expected. Also, PLZT
It goes without saying that similar effects can be expected even if , PLZN, and PBZT are combined with each other.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来例の光シ鳴・ツタ素子の構成図、第2図、
第3図は従来の光ンヤノタ素子の透過率の温度変化を示
した図、第4図(a) 、 (b) は本発明による光
シヤツタ素子の構成図及び素子の断面図、第5図は本発
明による光シヤツタ素子の透過率の温度変化を示した図
である。 41.42・・・・・組成の異なるPLZT基板、43
・・・・・接着層、44a 、44b・・・・・・電極
、46・・・・・偏光子、46・・・・・検光子、47
・・・・・光源。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図 第2図 乞成、 浸 (a(〕 第3図 温 1晒 (1′C) 11,4図
Figure 1 is a configuration diagram of a conventional optical shingle/vine element; Figure 2;
Fig. 3 is a diagram showing the temperature change in transmittance of a conventional optical shutter element, Fig. 4 (a) and (b) are a block diagram and a cross-sectional view of the optical shutter element according to the present invention, and Fig. 5 is a diagram showing a change in transmittance with temperature. FIG. 3 is a diagram showing a temperature change in transmittance of a light shutter element according to the present invention. 41.42...PLZT substrate with different composition, 43
...adhesive layer, 44a, 44b...electrode, 46...polarizer, 46...analyzer, 47
·····light source. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2: Temperature, Soaking (a) Figure 3: Temperature 1 Bleaching (1'C) Figures 11, 4

Claims (2)

【特許請求の範囲】[Claims] (1)組成の異なる電気光学効果を有する透光性焼結磁
器が、透明接着剤ではり合わされた平面基板の両面に、
複数個の透明電極を有し、かつ前記電極によシ形1戊ぎ
れる両面光シヤツタ部が互いに重ならないよう、基板の
両面に透明電極が配設されていることを特徴とする光シ
ヤツタ素子。
(1) Translucent sintered porcelain with different compositions and electro-optic effects are glued together with a transparent adhesive on both sides of a flat substrate.
1. A light shutter element having a plurality of transparent electrodes, the transparent electrodes being disposed on both sides of a substrate so that the double-sided light shutter parts cut out by the electrodes do not overlap with each other.
(2)透光性焼結磁器としてチタン酸ジルコン酸船中の
鉛の一部をランタンで置換した組成物であることを特徴
とする特許請求の範囲第1項記載の光シヤツタ素子。
(2) The light shutter element according to claim 1, characterized in that the light-transmitting sintered porcelain is a composition in which a part of the lead in the titanate zirconate vessel is replaced with lanthanum.
JP11843284A 1984-06-08 1984-06-08 Optical shutter element Pending JPS60262123A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11843284A JPS60262123A (en) 1984-06-08 1984-06-08 Optical shutter element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11843284A JPS60262123A (en) 1984-06-08 1984-06-08 Optical shutter element

Publications (1)

Publication Number Publication Date
JPS60262123A true JPS60262123A (en) 1985-12-25

Family

ID=14736495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11843284A Pending JPS60262123A (en) 1984-06-08 1984-06-08 Optical shutter element

Country Status (1)

Country Link
JP (1) JPS60262123A (en)

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