JPH063507B2 - Waveguide type optical switch - Google Patents
Waveguide type optical switchInfo
- Publication number
- JPH063507B2 JPH063507B2 JP3797885A JP3797885A JPH063507B2 JP H063507 B2 JPH063507 B2 JP H063507B2 JP 3797885 A JP3797885 A JP 3797885A JP 3797885 A JP3797885 A JP 3797885A JP H063507 B2 JPH063507 B2 JP H063507B2
- Authority
- JP
- Japan
- Prior art keywords
- optical
- optical switch
- waveguide type
- electro
- type optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光通信システムを構成するデバイスに係り、特
に電気光学基板に形成された光導波路と、光導波路に近
接して設けられた電極とで構成される導波路型光スイッ
チに関する。Description: TECHNICAL FIELD The present invention relates to a device that constitutes an optical communication system, and in particular to an optical waveguide formed on an electro-optical substrate and an electrode provided in the vicinity of the optical waveguide. The present invention relates to a waveguide type optical switch composed of.
光通信技術の普及に伴って光通信システムを構成するデ
バイスの、信頼性向上や小形化、低価格化等に対する要
求が増大しており、それを実現するための手段として量
産性に富んだデバイスの開発が望まれている。With the spread of optical communication technology, the demand for improved reliability, miniaturization, and cost reduction of devices that make up optical communication systems is increasing, and devices with high mass productivity are available as a means for achieving this. Development is desired.
例えばリチュウムナイオベート（LiNbO3）等の電気光学
基板に、チタン（Ti）等を拡散して形成された光導波路
と、光導波路に近接して設けられた電極とで構成される
光スイッチは、小形で駆動電圧が低くしかも高速動作が
可能で集積化が容易である。即ち小形化、低価格化等を
実現できる量産性に富んだ光スイッチであり、信頼性の
向上が期待されている。For example, an optical switch composed of an optical waveguide formed by diffusing titanium (Ti) or the like on an electro-optical substrate such as lithium niobate (LiNbO 3 ) and an electrode provided in the vicinity of the optical waveguide is It is small, has a low driving voltage, can operate at high speed, and is easy to integrate. In other words, it is an optical switch that is highly producible in mass production and can be made compact and inexpensive, and is expected to have improved reliability.
第２図は導波路型光スイッチの従来例を示す平面図であ
る。FIG. 2 is a plan view showing a conventional example of a waveguide type optical switch.
図においてLiNbO3からなる電気光学基板１の片面に、Ti
を拡散せしめてＸ字状に交叉する光導波路２を形成し、
光導波路２に近接させて電極3a、3bを設けている。しか
し光導波路２の上に直接電極3aを形成すると電極3aによ
って光が吸収され、光スイッチにおける光の損失が増大
するために、電気光学基板１の表面を絶縁性材料（Al20
3またはSiO2）からなるバッファ層４で被覆し、バッフ
ァ層４の上に電極3a、3bを形成している。In the figure, on one surface of the electro-optical substrate 1 made of LiNbO 3 , Ti
To form an optical waveguide 2 that intersects in an X shape by diffusing
Electrodes 3a and 3b are provided close to the optical waveguide 2. However, when the electrode 3a is formed directly on the optical waveguide 2, light is absorbed by the electrode 3a and the loss of light in the optical switch increases, so that the surface of the electro-optical substrate 1 is made of an insulating material (Al 2 0
3 or SiO 2 ), and the electrodes 3a and 3b are formed on the buffer layer 4.
かかる導波路型光スイッチにおいて光導波路２の入射端
2aから入射した光は、光導波路２を通過する途中で分岐
され出射端2bまたは2cから出射するが、電極3aと3b間に
駆動電圧が印加されている場合と印加されていない場合
とでは、出射端2bまたは2cに分岐される分岐比が異な
る。したがって電極3aと3bの間に印加する駆動電圧を投
入・切断することによって、光導波路２の入射端2aから
入射した光が出射する方向を、出射端2bから出射端2c
へ、或いは出射端2cから出射端2bへ切り換えることがで
きる。In such a waveguide type optical switch, the incident end of the optical waveguide 2
The light incident from 2a is branched while passing through the optical waveguide 2 and emitted from the emission end 2b or 2c. Depending on whether the drive voltage is applied between the electrodes 3a and 3b or not, The branching ratio of branching to the output end 2b or 2c is different. Therefore, by turning on / off the drive voltage applied between the electrodes 3a and 3b, the direction in which the light incident from the incident end 2a of the optical waveguide 2 is emitted is changed from the emission end 2b to the emission end 2c.
Or the output end 2c can be switched to the output end 2b.
バッファ層をAl203、SiO2等の絶縁性材料で形成した上記
の導波路型光スイッチにおいて、電気光学基板と絶縁層
との界面における絶縁性が、バッファ層の絶縁性に比べ
て不十分な場合に電極に駆動電圧を印加すると、当初は
光の分岐比が変わり出射方向が切り換わるが、光の分岐
比が時間の経過と共に元の状態に復旧する方向に移行す
る、ＤＣドリフトという現象が発生しやすいという問題
がある。In the above-mentioned waveguide type optical switch in which the buffer layer is made of an insulating material such as Al 2 O 3 or SiO 2 , the insulating property at the interface between the electro-optical substrate and the insulating layer is less than that of the buffer layer. When a drive voltage is applied to the electrodes in a sufficient case, initially the light branching ratio changes and the emission direction switches, but the light branching ratio shifts to the original state over time, which is called DC drift. There is a problem that the phenomenon is likely to occur.
上記問題点は電気光学基板に形成された光導波路と、光
導波路に近接して設けられた複数個の電極と、電気光学
基板とそれぞれの電極との間に介在せしめるバッファ層
からなり、導電性材料と絶縁性材料を合成してなる材料
でバッファ層を形成した本発明になる導波路型光スイッ
チによって解決される。The above-mentioned problem consists of an optical waveguide formed on the electro-optical substrate, a plurality of electrodes provided in the vicinity of the optical waveguide, and a buffer layer interposed between the electro-optical substrate and each electrode. This is solved by the waveguide type optical switch according to the present invention in which the buffer layer is formed of a material obtained by synthesizing a material and an insulating material.
実験によれば電気光学基板の上に直接電極を形成する
と、光導波路の上にある電極によって光が吸収され光の
損失が増大する。しかし電気光学基板の上に直接電極を
形成した、導波路型光スイッチにおいてはＤＣドリフト
現象は発生しない。そこで光の吸収が増大しない範囲の
導電性材料と、絶縁性材料を合成してなる材料でバッフ
ァ層を形成することによって、光の損失を増大させるこ
となくＤＣドリフト現象の発生を抑制することが可能に
なり、導波路型光スイッチの信頼性を一層向上させるこ
とができる。According to experiments, when an electrode is formed directly on the electro-optic substrate, light is absorbed by the electrode on the optical waveguide, and light loss increases. However, the DC drift phenomenon does not occur in the waveguide type optical switch in which the electrodes are directly formed on the electro-optical substrate. Therefore, by forming the buffer layer with a material obtained by synthesizing a conductive material and an insulating material in a range where light absorption does not increase, it is possible to suppress the occurrence of the DC drift phenomenon without increasing the light loss. Therefore, the reliability of the waveguide type optical switch can be further improved.
以下添付図により本発明の実施例について説明する。第
１図は本発明になる導波路型光スイッチの一実施例を示
す平面図であり、第２図と同じ対象物は同一記号で表し
ている。An embodiment of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a plan view showing an embodiment of the waveguide type optical switch according to the present invention, and the same objects as those in FIG. 2 are represented by the same symbols.
図においてLiNbO3からなる電気光学基板１の片面に、Ti
を拡散せしめてＸ字状に交叉する光導波路２を形成し、
光導波路２に近接させて電極3a、3bを設けている。そし
て光の吸収を増大させない程度の導電性材料（SnO2）
と、絶縁性材料（SiO2）を合成してなる材料から形成さ
れた、バッファ層５を電気光学基板１と電極3aの間、お
よび電気光学基板１と電極3bの間のにそれぞれに介在さ
せている。In the figure, on one surface of the electro-optical substrate 1 made of LiNbO 3 , Ti
To form an optical waveguide 2 that intersects in an X shape by diffusing
Electrodes 3a and 3b are provided close to the optical waveguide 2. And a conductive material (SnO 2 ) that does not increase the absorption of light
And a buffer layer 5 formed of a material obtained by synthesizing an insulating material (SiO 2 ) between the electro-optical substrate 1 and the electrode 3a and between the electro-optical substrate 1 and the electrode 3b. ing.
このように光の吸収が増大しない範囲の導電性材料と、
絶縁性材料を合成してなる材料でバッファ層を形成する
ことによって、光の損失を増大させることなくＤＣドリ
フト現象の発生を抑制することが可能になり、導波路型
光スイッチの信頼性を一層向上させることができる。With a conductive material in such a range that the absorption of light does not increase,
By forming the buffer layer with a material obtained by synthesizing an insulating material, it is possible to suppress the occurrence of the DC drift phenomenon without increasing the loss of light, and to further improve the reliability of the waveguide type optical switch. Can be improved.
上述の如く本発明によれば量産性に富み一層信頼性が向
上した導波路型光スイッチを提供することができる。As described above, according to the present invention, it is possible to provide a waveguide type optical switch which has high mass productivity and further improved reliability.
第１図は本発明になる導波路型光スイッチの一実施例を
示す平面図、 第２図は導波路型光スイッチの従来例を示す平面図、 である。図において １は電気光学基板、 ２は光導波路、 3a、3bは電極、 ５はバッファ層、 をそれぞれ表す。FIG. 1 is a plan view showing an embodiment of the waveguide type optical switch according to the present invention, and FIG. 2 is a plan view showing a conventional example of the waveguide type optical switch. In the figure, 1 is an electro-optical substrate, 2 is an optical waveguide, 3a and 3b are electrodes, and 5 is a buffer layer.
Claims (1)
光導波路に近接して設けられた複数個の電極と、該電気
光学基板とそれぞれの該電極との間に介在せしめるバッ
ファ層からなり、導電性材料と絶縁性材料を合成してな
る材料で該バッファ層を形成したことを特徴とする導波
路型光スイッチ。1. An optical waveguide formed on an electro-optical substrate, a plurality of electrodes provided in the vicinity of the optical waveguide, and a buffer layer interposed between the electro-optical substrate and each of the electrodes. And the buffer layer is formed of a material obtained by synthesizing a conductive material and an insulating material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3797885A JPH063507B2 (en) | 1985-02-27 | 1985-02-27 | Waveguide type optical switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3797885A JPH063507B2 (en) | 1985-02-27 | 1985-02-27 | Waveguide type optical switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61198133A JPS61198133A (en) | 1986-09-02 |
| JPH063507B2 true JPH063507B2 (en) | 1994-01-12 |
Family
ID=12512654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3797885A Expired - Fee Related JPH063507B2 (en) | 1985-02-27 | 1985-02-27 | Waveguide type optical switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH063507B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6373162A (en) * | 1986-09-16 | 1988-04-02 | Nec Corp | Manufacture of waveguide type optical/acoustic spectrum analyzer |
| US5653181A (en) * | 1991-08-26 | 1997-08-05 | Westinghouse Electric Corporation | Separation of particulate from flue gas of fossil fuel combustion and gasification |
| US5404412A (en) * | 1991-12-27 | 1995-04-04 | Fujitsu Limited | Optical waveguide device |
| JP2001174765A (en) * | 1999-12-15 | 2001-06-29 | Ngk Insulators Ltd | Progressive waveform optical modulator |
| US8326096B2 (en) | 2007-08-14 | 2012-12-04 | Selex Sistemi Integrati S.P.A. | Low switching voltage, fast time response digital optical switch |
-
1985
- 1985-02-27 JP JP3797885A patent/JPH063507B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61198133A (en) | 1986-09-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |