JPS60261159A - Microwave circuit device - Google Patents
Microwave circuit deviceInfo
- Publication number
- JPS60261159A JPS60261159A JP11705384A JP11705384A JPS60261159A JP S60261159 A JPS60261159 A JP S60261159A JP 11705384 A JP11705384 A JP 11705384A JP 11705384 A JP11705384 A JP 11705384A JP S60261159 A JPS60261159 A JP S60261159A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- holes
- hole
- conductor
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3415—Surface mounted components on both sides of the substrate or combined with lead-in-hole components
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はマイクロ波通信機に使用するトランジスタを用
いたＭ Ｉ Ｃ（Ｍｉｃｒｏｗａｖｅ Ｉ Ｃ）化高周
波増幅器に用゛いることができるマイクロ波回路装置に
関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a microwave circuit device that can be used in an MIC (Microwave IC) high-frequency amplifier using transistors used in microwave communication devices. It is.
従来例の構成とその問題点
近年、マイクロ波通信機の回路構成としては誘電体基板
上にマイクロス）−１）ノブ線路による回路を形成した
ＭＩＣ回路が一般的に用いられるように力っだが、トラ
ンジスタを用いた増幅器を構成する場合、トランジスタ
の接地を確実にしないと利得が減少したり、動作が不安
定となる。Conventional configurations and their problems In recent years, as the circuit configuration of microwave communication devices, MIC circuits in which a circuit is formed using a knob line on a dielectric substrate have become popular. When constructing an amplifier using transistors, if the transistors are not grounded reliably, the gain will decrease and the operation will become unstable.
以下図面を参照しながら従来のマイクロ波回路装置につ
いて説明する。第１図は従来のＭＩＣ化増幅器のトラン
ジスタの配設部の要部図面である。A conventional microwave circuit device will be described below with reference to the drawings. FIG. 1 is a drawing of a main part of a conventional MIC amplifier where transistors are arranged.
同図ａは裏面導体２を有する誘電体基板１上に人出力マ
イクロストリップ線路３ａおよび３りを形成し、トラン
ジスタを接地するためのその内側に裏面導体２に接続す
る導体を有する貫通穴４ａおよび４ｂｉ形成したＭＩＣ
基板の要部斜視図である。同図すは同図ａのＭＩＣ基板
にトランジスタ５を実装した要部斜視図で、６ａおよび
６ｂは接地するエミッタ端子、７および８はそれぞれ信
号の入出力のベース端子およびコレクタ端子である。Figure a shows human output microstrip lines 3a and 3 formed on a dielectric substrate 1 having a back conductor 2, and a through hole 4a and a through hole 4a having a conductor connected to the back conductor 2 inside for grounding the transistor. 4bi formed MIC
FIG. 3 is a perspective view of the main parts of the board. This figure is a perspective view of the main part of the transistor 5 mounted on the MIC board of FIG.
同図Ｃは同図すのＡ −Ａ’断面図である。さらに、同
図ｄは同図すのＢ −Ｂ／断面図である。なお、１２は
トランジスタの入出力端子間に生ずる浮遊容量を示す。Figure C is a sectional view taken along the line A-A' in the same figure. Furthermore, d of the same figure is a sectional view taken along line B-B of the same figure. Note that 12 indicates a stray capacitance generated between the input and output terminals of the transistor.
さて、上記のようなＭＩＣ化増幅器においてはに陥った
り、回路動作が不安定になるという欠点を有していた。However, the above-mentioned MIC amplifier has drawbacks such as failure and unstable circuit operation.
発明の目的
本発明の目的はマイクロ波帯のＭＩＣ化増幅器の入出力
間の浮遊容量を減少させて回路動作の安定化を図ること
ができるマイクロ波回路装置を提供することにある。OBJECTS OF THE INVENTION An object of the present invention is to provide a microwave circuit device capable of stabilizing circuit operation by reducing stray capacitance between input and output of a microwave band MIC amplifier.
発明の構成
本発明のマイクロ波回路装置は、トランジスタの２つの
接地端子を挿入するための２つの穴が幅の狭いスリット
によって結ばれた形状の貫通穴を設けた誘電体基板上に
前記貫通穴のスリット部分に直交するようにその両側に
マイクロストリップ線路が設けられ、前記誘電体基板の
残りの一方の面には接地導体を形成すると共に前記貫通
穴の内側には前記接地導体に接続するように導体を形成
し、前記トランジスタは前記貫通穴の中央部に設け、そ
の入出力端子をそれぞれ前記マイクロストリップ線路に
接続し、かつ前記トランジスタの接地端子を前記２つの
穴の位置で前記接地導体に接続したことを特長とするも
のであり、トランジスタの接地を前記２つの穴の位置で
得ることができ、かつトランジスタの入出力端子間に発
生する浮遊容量を前記幅の狭いスリット状の貫通部によ
って減少することができる利点を有する。Structure of the Invention The microwave circuit device of the present invention has a dielectric substrate provided with a through hole in which two holes for inserting two ground terminals of a transistor are connected by a narrow slit. A microstrip line is provided on both sides of the slit so as to be perpendicular to the slit, and a ground conductor is formed on the remaining surface of the dielectric substrate, and a microstrip line is provided inside the through hole to connect to the ground conductor. a conductor is formed in the two holes, the transistor is provided in the center of the through hole, its input and output terminals are connected to the microstrip line, and the ground terminal of the transistor is connected to the ground conductor at the position of the two holes. It is characterized by the fact that the transistor can be grounded at the positions of the two holes, and the stray capacitance generated between the input and output terminals of the transistor can be reduced by the narrow slit-shaped through-hole. It has the advantage of being able to be reduced.
実施例の説明
第２図ａは本発明の第１の実施例のマイクロ波回路装置
に用いるＭＩＣ基板の要部斜視図である。DESCRIPTION OF EMBODIMENTS FIG. 2a is a perspective view of a main part of a MIC board used in a microwave circuit device according to a first embodiment of the present invention.
同図で、１３は誘電体基板、１４は裏面導体、１５およ
び１６はそれぞれ入出力のマイクロストリップ線路、１
了ａおよび１７ｂは円形の貫通穴、１８は幅の狭いスリ
ットであり、円形の貫通穴１７ａおキび１７ｂを結ぶよ
うに延びている。なお、貫通孔１７ａ、１７ｂおよびス
リット１８はその内側に裏面導体１４を接続するように
導体を形成している。第２図すおよびＣはそれぞれ第２
図ｄのＣ−Ｃ’断面図およびＤ−Ｄ’断面図である。第
３図ａは第２図に示したＭＩＣ基板上にトランジスタを
実装したマイクロ波回路装置の上面図である。In the figure, 13 is a dielectric substrate, 14 is a back conductor, 15 and 16 are input and output microstrip lines, and 1
Reference numerals 17a and 17b are circular through holes, and 18 is a narrow slit, which extends to connect the circular through holes 17a and 17b. Note that the through holes 17a, 17b and the slit 18 form a conductor so as to connect the back conductor 14 inside thereof. Figures 2 and C are the second
They are a CC' sectional view and a DD' sectional view of FIG. d. FIG. 3a is a top view of the microwave circuit device shown in FIG. 2, in which transistors are mounted on the MIC substrate.
同図で、１９ばトランジスタパッケージ、２０ａおよび
２０ｂは接地するエミッタ端子、２１および２２ばそれ
ぞれ入力のベース端子、および出力のコレクタ端子であ
る。２３ａ 、 ２ｓ’−ｂ 、２４および２５ばはん
だ付は部分である。第３図すおよびＣはそれぞれ第３図
ａのＥ −Ｅ’断面図およびＦ−Ｆ’断面図である。な
お、２６ａおよび２６ｂはそれぞれトランジスタの入出
力端子とスリットの内側の接地導体間の容量である。In the figure, 19 is a transistor package, 20a and 20b are grounded emitter terminals, and 21 and 22 are input base terminals and output collector terminals, respectively. 23a, 2s'-b, 24 and 25 are soldered parts. Figures 3A and 3C are a sectional view taken along line E-E' and line FF' of Figure 3a, respectively. Note that 26a and 26b are capacitances between the input/output terminal of the transistor and the ground conductor inside the slit, respectively.
以上のように構成したマイクロ波回路装置では、トラン
ジスタの接地がトランジスタパッケージ１９のごく近傍
で得ることができ、かつトランジスタの入出力間に発生
する浮遊容量は、第３図Ｃに示すように直列帰還容量の
一部が並列付加容量になるため直列帰還容量が減少し、
回路が発振状態に陥りに〈〈なり、回路動作が安定化さ
れる。In the microwave circuit device configured as described above, the transistor can be grounded very close to the transistor package 19, and the stray capacitance generated between the input and output of the transistor can be connected in series as shown in FIG. 3C. Part of the feedback capacitance becomes parallel additional capacitance, so the series feedback capacitance decreases,
The circuit falls into an oscillation state, and the circuit operation becomes stable.
第４図は本発明の第２の実施例に用いるＭＩＣ基板の要
部斜視図である。同図で、２７は誘電体基板、２８は裏
面接地導体、２９および３ｏはそれぞれ入出力のマイク
ロストリップ線路、３１ａおよび３１ｂはトランジスタ
の接地すべき電極の形状に合わせた方形の貫通穴、３２
は幅の狭いスリットで貫通穴３１ａおよび３１ ｂｉ結
ぶようにのびている。なお、貫通孔３１ａ、３１ｂおよ
びスリット３２の内側には裏面導体２８に接続するよう
に導体を形成しである。第５図は実装するトランジスタ
の斜視図である。同図で、３３はトランジスタパノケー
ジ、３４ａおよび３４ｂはそれぞれ第４図に示したＭＩ
Ｃ基板の２つの方形の貫通穴３１ａのおよび３１ｂに入
るように折り曲げた接地するエミッタ端子、３５および
３６はそれぞれ入力のベース端子および出力のコレクタ
端子である。第６図ａは第４図のＭＩＣ基板に第５図の
トランジスタを実装したマイクロ波回路装置の要部上面
図である。同図で、３７ａ、３７ｂ、３Ｂおよび３９は
はんだ付は部分である。第６図すおよびＣはそれぞれ第
６図ａのＧ −Ｇ’断面図およびＨ−Ｈ’断面図である
。FIG. 4 is a perspective view of essential parts of a MIC board used in a second embodiment of the present invention. In the figure, 27 is a dielectric substrate, 28 is a back ground conductor, 29 and 3o are input/output microstrip lines, 31a and 31b are rectangular through holes that match the shape of the electrode to be grounded of the transistor, and 32
A narrow slit extends to connect the through holes 31a and 31bi. Note that a conductor is formed inside the through holes 31a, 31b and the slit 32 so as to be connected to the back conductor 28. FIG. 5 is a perspective view of the transistor to be mounted. In the same figure, 33 is a transistor panocage, and 34a and 34b are MIs shown in FIG.
Grounded emitter terminals 35 and 36 bent to fit into the two rectangular through holes 31a and 31b of the C substrate are an input base terminal and an output collector terminal, respectively. FIG. 6a is a top view of essential parts of a microwave circuit device in which the transistors shown in FIG. 5 are mounted on the MIC board shown in FIG. 4. In the figure, 37a, 37b, 3B and 39 are soldered parts. FIGS. 6A and 6C are a GG' sectional view and an HH' sectional view of FIG. 6a, respectively.
以上のように構成したマイクロ波回路装置では、トラン
ジスタの接地がトランジスタパッケージ３３のごく近傍
で得られるとともに、トランジスタの入出力間に発生す
る浮遊量を接地導体を有するスリット状の貫通穴３２に
よって軽減することができ、回路動作を安定化すること
ができる。さらに、方形の貫通穴３１ａ、３１ｂＶＣ）
ランジスタの接地端子３４ａ 、３４ｂｉ折シ曲げて挿
入することにより、トランジスタの配置位置を明確にす
ることができる。In the microwave circuit device configured as described above, the grounding of the transistor can be obtained in close proximity to the transistor package 33, and the stray amount generated between the input and output of the transistor can be reduced by the slit-shaped through hole 32 having a ground conductor. It is possible to stabilize the circuit operation. Furthermore, rectangular through holes 31a, 31bVC)
By bending and inserting the ground terminals 34a and 34bi of the transistor, the placement position of the transistor can be made clear.
第７図は本発明の更に他の実施例のマイクロ波回路装置
に用いるＭＩＣ基板の要部斜視図である。FIG. 7 is a perspective view of a main part of a MIC board used in a microwave circuit device according to still another embodiment of the present invention.
同図で、４０は誘電体基板、４１は裏面導体、４２およ
び４３はそれぞれ入出力マイクロストリップ線路、４４
ａおよび４４ｂはそれぞれ方形の貫通穴、４５ａおよび
４５ｂは方形の貫通穴部４４ａおよび４４ｂに接続する
半円形の貫通穴、４６は幅の狭いスリットで貫通穴４４
ａおよび４４ｂを結ぶようにのびている。なお、貫通穴
４４ａ、４４ｂ。In the figure, 40 is a dielectric substrate, 41 is a back conductor, 42 and 43 are input/output microstrip lines, and 44
a and 44b are square through holes, 45a and 45b are semicircular through holes that connect to the square through hole parts 44a and 44b, and 46 is a narrow slit that connects the through hole 44.
It extends to connect a and 44b. Note that through holes 44a and 44b.
ａｔｓａ 、４ｔｓｂおよびスリット４６からなる貫通
穴の内側には、裏面導体４１に接続する導体全形成しで
ある。第８図ａは第７図のＭＩＣ基板に第５図のトラン
ジスタを実装したマイクロ波回路装置の要部上面図であ
る。同図で、４７ａおよびａ−ｒｂはトランジスタの接
地端子のはんだ付は部分で、半円形の貫通穴部４５ａ、
４６ｂにばほんだを充てんしである。４８および４９は
それぞれ入出力マイクロストリップ線路４２．４３とト
ランジスタの入出力端子３５．３６との接続部のはんだ
付は部分である。第８図すおよびＣはそれぞれ同図ａの
１．−Ｉ’断面図およびＪ −１’断面図である。A conductor connected to the back conductor 41 is entirely formed inside the through hole consisting of atsa, 4tsb and slit 46. FIG. 8a is a top view of essential parts of a microwave circuit device in which the transistor of FIG. 5 is mounted on the MIC board of FIG. 7. In the same figure, 47a and a-rb are the soldering parts of the ground terminal of the transistor, and the semicircular through-hole part 45a,
46b is filled with Bahonda. 48 and 49 are soldered portions of the connection portions between the input/output microstrip lines 42 and 43 and the input/output terminals 35 and 36 of the transistors, respectively. Figures 8 and 8 are 1. and 1.a in Figure 8a, respectively. -I' sectional view and J-1' sectional view.
さて、以上のように構成したマイクロ波回路装置では、
トランジスタの接地部分の半円形の貫通部４ｓａ、４ｅ
ｓｂにはんだを充てんすることにより、方形の貫通穴の
みの場合に比べてよシ接地が確実になされる。同時に、
トランジスタの入出力端子間の浮遊容量がスリット状の
貫通穴４６によって軽減され、回路動作を安定化するこ
とができる。さらに、トランジスタの接地端子を折り曲
げて方形の貫通穴４４ａ、４４ｂに挿入することにより
トランジスタの配置位置決定が容易になる。Now, in the microwave circuit device configured as above,
Semicircular penetration parts 4sa and 4e of the grounding part of the transistor
By filling sb with solder, better grounding can be achieved than in the case of only a rectangular through hole. at the same time,
Stray capacitance between the input and output terminals of the transistor is reduced by the slit-shaped through hole 46, and circuit operation can be stabilized. Further, by bending the ground terminals of the transistors and inserting them into the rectangular through holes 44a and 44b, it becomes easy to determine the placement position of the transistors.
なお、以上の実施例ではトランジスタの接地端子を接続
する貫通穴の形状を円形、方形、および方形と円形の組
み合わせとしたが、この形はこれらに限定されるもので
なく、貫通穴によってトランジスタの接地端子を接地で
きる形状であれば他の形状でもよい。In the above embodiments, the shape of the through hole connecting the ground terminal of the transistor was circular, square, or a combination of square and circular, but the shape is not limited to these, and the shape of the through hole connects the ground terminal of the transistor. Other shapes may be used as long as the shape allows the ground terminal to be grounded.
発明の効果
以上の説明から明らかなように本発明は、トランジスタ
の２つの接地端子を挿入するための２つの穴が幅の狭い
スリットによって結ばれた形状の貫通穴を設けた誘電体
基板上に前記貫通穴のスリット部分に直交するようにそ
の両側にマイクロストリップ線路が設けられ、前記誘電
体基板の残りの一方の面には接地導体を形成すると共に
前記貫通穴の内側には前記一方の面の接地導体に接続す
るように導体を形成し、前記トランジスタは前記貫通穴
の中央部に設け、その入出力端子はそれぞれ前記マイク
ロストリップ線路に接続し、かつ前記トランジスタの接
地端子は前記２つの穴の位置で前記接地導体に接続した
構造のマイクロ波回路装置であるため、トランジスタの
接地をトランジスタパッケージのごく近傍で得ることが
できるとともに、接地導体を有するスリット状の貫通穴
部によってトランジスタの入出力端子間に発生する浮遊
容量を減少することができ、回路動作を発振状９態に陥
るのを防ぎ安定化するという効果が得られる。Effects of the Invention As is clear from the above description, the present invention provides a dielectric substrate having a through hole in which two holes for inserting two ground terminals of a transistor are connected by a narrow slit. A microstrip line is provided on both sides of the slit portion of the through hole, and a ground conductor is formed on the remaining one surface of the dielectric substrate, and a ground conductor is provided on the other side of the dielectric substrate, and a a conductor is formed so as to be connected to the ground conductor of the two holes, the transistor is provided in the center of the through hole, its input and output terminals are respectively connected to the microstrip line, and the ground terminal of the transistor is connected to the ground conductor of the two holes. Since the microwave circuit device has a structure in which the ground conductor is connected to the ground conductor at the position, the transistor can be grounded very close to the transistor package. The stray capacitance generated between the terminals can be reduced, and the effect of stabilizing the circuit operation by preventing it from falling into an oscillation state can be obtained.
第１図は従来のＭＩＣ化増幅器の要部を示し、同図ａは
ＭＩＧ基板の斜視図、同図すはトランジスタを実装した
ＭＩＣ化増幅器の要部斜視図、同図ＣはＡ −Ａ’断面
図、同図ｄはＢ−Ｂ’断面図、第２図ａは本発明の第１
の実施例のＭＩＣ基板の要部斜視図、同図すはｃ −ｃ
’断面図、同図ＣはＤ−Ｄ′断−面図、第３図ａは本発
明の第１の実施例のＭＩＣ化増幅器の要部上面図、同図
すばＥ −Ｅ’断面図、同図ＣはＦ−Ｆ’断面図、第４
図は本発明の第２の実施例のＭＩＣ基板の要部斜視図、
第５図ａは本発明の第２の実施例のＭＩＣ化増幅器に用
いるパッケージ入りトランジスタの斜視図、第５図すは
その背面図、第６図ａは本発明の第２の実施例のＭＩＣ
化増幅器の要部上面図、同図ｂｆｉＧ−Ｇ′断面図、同
図ＣはＦ−Ｆ’断面図、第７図は本発明の他の実施例の
ＭＩＣ基板の要部斜視図、第８図ａは本発明の他の実施
例のＭＩＣ化増幅器の要Ｓ上面図、同図すはＩ−Ｉ’断
面図、同図ＣはＳ＝１′断面図である。
１８・・・・・・狭幅スリット、２６ａ、ｂ・・・トラ
ンジスタの入出力端子と狭幅スリットの内側接地導体間
の浮遊容量、３１ａ、ｂ・・方形貫通穴、３２・・・
狭幅スリット、４５ａ、ｂ −半円形貫通穴、４６・・
狭幅スリ、ト。
代理人の氏名 弁理士 中 尾 敏 男 はが１名第
１ 図
４ム
第２図
第３図
第４図
第５図
第６図
３２ α
第７図Figure 1 shows the main parts of a conventional MIC amplifier, Figure a is a perspective view of the MIG board, Figure 1 is a perspective view of the main parts of the MIC amplifier with transistors mounted, and Figure C is A-A'. A cross-sectional view, FIG. 2d is a BB' cross-sectional view, and FIG.
A perspective view of the main parts of the MIC board according to the embodiment shown in FIG.
Figure 3A is a top view of the main parts of the MIC amplifier according to the first embodiment of the present invention, and Figure C is a sectional view taken along line E-E'. , C in the same figure is a FF' cross-sectional view, the fourth
The figure is a perspective view of a main part of a MIC board according to a second embodiment of the present invention.
FIG. 5a is a perspective view of a packaged transistor used in an MIC amplifier according to a second embodiment of the present invention, FIG. 5 is a rear view thereof, and FIG.
FIG. 7 is a top view of the essential parts of the MIC board according to another embodiment of the present invention, FIG. Figure a is a top view of an MIC amplifier according to another embodiment of the present invention, the figure is a cross-sectional view taken along line II', and figure C is a cross-sectional view taken at S=1'. 18... Narrow slit, 26a, b... Stray capacitance between the input/output terminal of the transistor and the inner ground conductor of the narrow slit, 31a, b... Rectangular through hole, 32...
Narrow slit, 45a, b - semicircular through hole, 46...
Narrow pickpocket. Name of agent: Patent attorney Toshio Nakao Haga 1st person
1 Fig. 4m Fig. 2 Fig. 3 Fig. 4 Fig. 5 Fig. 6 Fig. 32 α Fig. 7
Claims (2)
２つ穴が幅の狭いスリッ）Ｋよって結ばれた形状の貫通
穴を設けた誘電体基板上に前記貫通穴のスリット部分に
直交するようにその両側にマイクロストリップ線路を設
け、前記誘電体基板の残シの一方の面に接地導体を形成
すると共に前記貫通穴の内側に前記接地導体に接続する
ように導体を形成し、前記トランジスタを前記貫通穴の
中央部に対応するように前記誘電体基板上に配設し、そ
のトランジスタの入出力端子をそれぞれ前記マイクロス
トリップ線路に接続し、かつ前記トランジスタの接地端
子を前記２つの穴の位置で前記接地導体に接続したこと
を特徴とするマイクロ波回路装置。(1) Two holes for inserting the two ground terminals of the transistor are formed into narrow slits on a dielectric substrate with through holes connected by K. A microstrip line is provided on both sides of the dielectric substrate, a ground conductor is formed on one of the remaining surfaces of the dielectric substrate, and a conductor is formed inside the through hole to be connected to the ground conductor, and the transistor is The input and output terminals of the transistors are arranged on the dielectric substrate so as to correspond to the centers of the through holes, and the input and output terminals of the transistors are respectively connected to the microstrip lines, and the ground terminals of the transistors are connected to the positions of the two holes. A microwave circuit device, characterized in that the microwave circuit device is connected to the ground conductor.
の穴をそれぞれ方形に形成したことを特徴とする特許請
求の範囲第１項記載のマイクロ波回路装置。(2) The microwave circuit device according to claim 1, wherein the two holes into which the two ground terminals of the transistor are inserted are each formed in a rectangular shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11705384A JPS60261159A (en) | 1984-06-07 | 1984-06-07 | Microwave circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11705384A JPS60261159A (en) | 1984-06-07 | 1984-06-07 | Microwave circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60261159A true JPS60261159A (en) | 1985-12-24 |
| JPH0354863B2 JPH0354863B2 (en) | 1991-08-21 |
Family
ID=14702254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11705384A Granted JPS60261159A (en) | 1984-06-07 | 1984-06-07 | Microwave circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60261159A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08167818A (en) * | 1994-12-14 | 1996-06-25 | Nec Corp | High frequency device |
| EP0876088A2 (en) * | 1997-05-02 | 1998-11-04 | NEC Corporation | Semiconductor microwave amplifier |
| JP2020205372A (en) * | 2019-06-18 | 2020-12-24 | 矢崎総業株式会社 | Amplifier circuit board |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1013110A (en) * | 1996-06-25 | 1998-01-16 | Murata Mfg Co Ltd | Irreversible circuit element |
-
1984
- 1984-06-07 JP JP11705384A patent/JPS60261159A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08167818A (en) * | 1994-12-14 | 1996-06-25 | Nec Corp | High frequency device |
| EP0876088A2 (en) * | 1997-05-02 | 1998-11-04 | NEC Corporation | Semiconductor microwave amplifier |
| EP0876088A3 (en) * | 1997-05-02 | 1999-10-27 | NEC Corporation | Semiconductor microwave amplifier |
| JP2020205372A (en) * | 2019-06-18 | 2020-12-24 | 矢崎総業株式会社 | Amplifier circuit board |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0354863B2 (en) | 1991-08-21 |
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