JPS60257016A - Method of plating lead switch contact - Google Patents

Method of plating lead switch contact

Info

Publication number
JPS60257016A
JPS60257016A JP11421284A JP11421284A JPS60257016A JP S60257016 A JPS60257016 A JP S60257016A JP 11421284 A JP11421284 A JP 11421284A JP 11421284 A JP11421284 A JP 11421284A JP S60257016 A JPS60257016 A JP S60257016A
Authority
JP
Japan
Prior art keywords
plating
switch contact
reed switch
nozzle
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11421284A
Other languages
Japanese (ja)
Inventor
大豆生田 哲男
小倉 光司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP11421284A priority Critical patent/JPS60257016A/en
Publication of JPS60257016A publication Critical patent/JPS60257016A/en
Pending legal-status Critical Current

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  • Manufacture Of Switches (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は通信機器、制御機器等における継電器。[Detailed description of the invention] 〔Technical field〕 The present invention relates to a relay for communication equipment, control equipment, etc.

センサとして広く用いられるリードスイッチの接点メッ
キ方法に関する。
This invention relates to a contact plating method for reed switches that are widely used as sensors.

〔従来技術〕[Prior art]

リードスイッチは第1図に示すように、ガラス管11中
に一対の磁性体から成るリード片12を対向配置させ、
これに外部から磁界を印加することにより、リード片1
2が磁化し相互に吸引して接点13を開閉する機能を有
する前記リード片12が相互に接触する接点13には、
接触の安定性を長時間にわたって維持するため金、銀、
銅、ロジウム、ルテニウム、レニウム、パラジウムなど
の少なくとも1つの貴金属がメッキによって施されてい
る。
As shown in FIG. 1, the reed switch has a pair of reed pieces 12 made of magnetic material disposed opposite each other in a glass tube 11.
By applying a magnetic field to this from the outside, the lead piece 1
The contacts 13 where the lead pieces 12 come into contact with each other have the function of opening and closing the contacts 13 by magnetizing the lead pieces 2 and attracting them to each other.
Gold, silver,
At least one noble metal such as copper, rhodium, ruthenium, rhenium, palladium, etc. is applied by plating.

従来、この種のリードスイッチ接点のメッキ方法は、第
2図に示すように、接点となるリード片22の先端部分
23をメッキ液25中に浸漬し、このリード片22を陰
極としてメッキ液25中に置かれた陽極との間に電流を
流しリード片22に接点メッキを施し、接点としている
。この方法においては、メッキしようとする貴金属イオ
ンのメッキ液中における移動速度が遅いために、所定の
メッキ厚さを得るために要するメッキ時間が極めて険<
、生産性が悪い。−例を挙げれば、金の場合1ミクロン
(μm)当り約3分、ロジウムは同6分、ルテニウムは
同15分である。この生産性を上げるだめに多数のリー
ド片を一時にメッキしようとすると、メッキ厚さのバラ
ツキが大きくなり制御が困難である。また、リードスイ
ッチにおいては、通常接触するのはリード片の片面のみ
であるが、上記方法においては両面にメッキが施され、
高価な貴金属を必要具−ヒに使用するという問題がある
Conventionally, the plating method for this type of reed switch contact is as shown in FIG. A current is passed between the lead piece 22 and the anode placed therein, and contact plating is applied to the lead piece 22 to form a contact. In this method, since the movement speed of the noble metal ions to be plated in the plating solution is slow, the plating time required to obtain a predetermined plating thickness is extremely short.
, poor productivity. - For example, gold takes about 3 minutes per micron (μm), rhodium takes about 6 minutes, and ruthenium takes about 15 minutes. If a large number of lead pieces are plated at the same time in order to increase productivity, the variation in plating thickness becomes large and control becomes difficult. In addition, in a reed switch, normally only one side of the reed piece is in contact, but in the above method, both sides are plated,
There is a problem of using expensive precious metals for necessary equipment.

〔発明の目的〕[Purpose of the invention]

本発明は、リード片に接点メッキ液を高速で噴射するこ
とにより、必要な部分のみに貴金属のメッキを高速で施
すリードスイッチ接点メッキ方法を提供するものである
The present invention provides a reed switch contact plating method in which noble metal plating is applied at high speed only to necessary portions by spraying a contact plating solution onto the reed piece at high speed.

〔実施例の説明〕[Explanation of Examples]

以下、本発明の実施例を第3図を用いて説明する。 Embodiments of the present invention will be described below with reference to FIG.

メッキを施こそうとするリード片31の接点となる部分
32から5朋以内の距離を隔てて接点メッキ液を噴射す
るノズル33を配置する。このノズル33はメッキ時に
陽極を兼ねるだめに、金属製とする。メッキ用電源35
からリード片31に陰極を、且つノズル33に陽極をそ
れぞれ接続し、電流を供給する。このときの電流はノズ
ル33の内部の断面積1dm”当り100A〜500A
とする。
A nozzle 33 for spraying a contact plating solution is arranged at a distance of less than 5 mm from a portion 32 that becomes a contact of a lead piece 31 to be plated. This nozzle 33 is made of metal so that it also serves as an anode during plating. Plating power supply 35
A cathode is connected to the lead piece 31, an anode is connected to the nozzle 33, and current is supplied. The current at this time is 100A to 500A per 1 dm" of the internal cross-sectional area of the nozzle 33.
shall be.

次に、ノズル33からメッキ液34を秒速20011I
l〜1.0001’1mの速度でリード片接点部分32
に噴射してメッキを施す。
Next, the plating solution 34 is applied from the nozzle 33 at a speed of 20011 I/sec.
The lead piece contact part 32 at a speed of l~1.0001'1m.
Plating is applied by spraying on the surface.

〔発明の効果〕〔Effect of the invention〕

本発明は以上説明したように、細いノズルから噴射した
メッキ液をリード片に当てて電流を流すことにより、リ
ード片の接点となる部分のみに短時間でメッキを施すこ
とができる。この方法では、例えばルテニウムをメッキ
する場合、従来1ミクロン(μm)当り約15分の時間
を要していたものが約1秒で完了し、従来より極めて短
時間に処理することができる。また、ノズル1ヶ当り1
ケの接点をメッキするので、制御が容易であり、メッキ
厚さのバラツキを招くことがない。
As described above, in the present invention, by applying a plating liquid sprayed from a narrow nozzle to a lead piece and applying current to the lead piece, it is possible to plate only the portion of the lead piece that will become a contact point in a short time. With this method, for example, when plating ruthenium, which conventionally required about 15 minutes per micron (μm), it can be completed in about 1 second, making the process much shorter than before. Also, 1 per nozzle
Since only one contact point is plated, control is easy and there is no variation in plating thickness.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はリードスイッチの断面図、第2図は従来のメッ
キ方法を示す構成図、第3図は本発明の一実施例を示す
構成図である。 11・・・・・・ガラス管、12・・・・・・リード片
、13・・・・・・接点部分、21・・・・・・メッキ
槽、22・・・・・・リード片、23・・・・・・接点
部分、24・・・・・・陽極、25・・・・・・メッキ
液、26・・・・・・メッキ用電源、31・・・・・・
リード片、32・・・・・・接点部分、33・・・・・
・ノズル、34・・・・・・メッキ液、35・・・・・
・メッキ用電源。 5−
FIG. 1 is a sectional view of a reed switch, FIG. 2 is a block diagram showing a conventional plating method, and FIG. 3 is a block diagram showing an embodiment of the present invention. 11... Glass tube, 12... Lead piece, 13... Contact part, 21... Plating tank, 22... Lead piece, 23...Contact part, 24...Anode, 25...Plating solution, 26...Power source for plating, 31...
Lead piece, 32...Contact part, 33...
・Nozzle, 34...Plating liquid, 35...
・Power supply for plating. 5-

Claims (1)

【特許請求の範囲】 1、接点メッキを施すリード片表面にノズルから金、銀
、銅、ロジウム、ルテニウム、レニウム。 パラジウムの少なくとも1つのメッキ液を高速噴射する
ことを特徴とするリードスイッチ接点メッキ方法。 2、前記ノズルの内径をQ、5mm〜3皿としたことを
特徴とする特許請求の範囲第1項記載のリードスイッチ
接点メッキ方法。 3、前記メッキ液の噴射速度を秒速2001!I−LO
OO絹としたことを特徴とする特許請求の範囲第1項記
載のリードスイッチ接点メッキ方法。 4、 メッキ電流を前記ノズルの断面積1dm”当シ1
00A〜500Aとしたことを特徴とする特許請求の範
囲第1項記載のリードスイッチ接点メッキ方法。
[Claims] 1. Gold, silver, copper, rhodium, ruthenium, rhenium is applied from a nozzle to the surface of the lead piece to which contact plating is applied. A reed switch contact plating method characterized by high-speed spraying of at least one palladium plating solution. 2. The reed switch contact plating method according to claim 1, wherein the inner diameter of the nozzle is Q, 5 mm to 3 plates. 3. The injection speed of the plating solution is 2001 per second! I-LO
A reed switch contact plating method according to claim 1, characterized in that OO silk is used. 4. Apply the plating current to the cross-sectional area of the nozzle of 1 dm.
A reed switch contact plating method according to claim 1, characterized in that the reed switch contact plating method is 00A to 500A.
JP11421284A 1984-06-04 1984-06-04 Method of plating lead switch contact Pending JPS60257016A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11421284A JPS60257016A (en) 1984-06-04 1984-06-04 Method of plating lead switch contact

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11421284A JPS60257016A (en) 1984-06-04 1984-06-04 Method of plating lead switch contact

Publications (1)

Publication Number Publication Date
JPS60257016A true JPS60257016A (en) 1985-12-18

Family

ID=14632018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11421284A Pending JPS60257016A (en) 1984-06-04 1984-06-04 Method of plating lead switch contact

Country Status (1)

Country Link
JP (1) JPS60257016A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5077230A (en) * 1973-10-04 1975-06-24
JPS52123338A (en) * 1976-04-09 1977-10-17 Nippon Electro Plating Method of electroplating in high speed thickening rhodium metals
JPS5397936A (en) * 1977-02-04 1978-08-26 Schering Ag Method of partially plating conductive surface or conducted surface
JPS56102590A (en) * 1979-08-09 1981-08-17 Koichi Shimamura Method and device for plating of microarea
JPS58217693A (en) * 1982-06-14 1983-12-17 Sonitsukusu:Kk Material treated on its minute part with silver plating and plating method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5077230A (en) * 1973-10-04 1975-06-24
JPS52123338A (en) * 1976-04-09 1977-10-17 Nippon Electro Plating Method of electroplating in high speed thickening rhodium metals
JPS5397936A (en) * 1977-02-04 1978-08-26 Schering Ag Method of partially plating conductive surface or conducted surface
JPS56102590A (en) * 1979-08-09 1981-08-17 Koichi Shimamura Method and device for plating of microarea
JPS58217693A (en) * 1982-06-14 1983-12-17 Sonitsukusu:Kk Material treated on its minute part with silver plating and plating method

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