JPS60253216A - 半導体へのアルミニウム拡散法 - Google Patents

半導体へのアルミニウム拡散法

Info

Publication number
JPS60253216A
JPS60253216A JP58237035A JP23703583A JPS60253216A JP S60253216 A JPS60253216 A JP S60253216A JP 58237035 A JP58237035 A JP 58237035A JP 23703583 A JP23703583 A JP 23703583A JP S60253216 A JPS60253216 A JP S60253216A
Authority
JP
Japan
Prior art keywords
diffusion
thin film
semiconductor
aluminum
sputtering method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58237035A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6356701B2 (https=
Inventor
Seiki Sato
清貴 佐藤
Kazumasa Sugawara
菅原　一誠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Faurecia Clarion Electronics Co Ltd
Original Assignee
Clarion Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clarion Co Ltd filed Critical Clarion Co Ltd
Priority to JP58237035A priority Critical patent/JPS60253216A/ja
Publication of JPS60253216A publication Critical patent/JPS60253216A/ja
Publication of JPS6356701B2 publication Critical patent/JPS6356701B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Physical Vapour Deposition (AREA)
JP58237035A 1983-12-14 1983-12-14 半導体へのアルミニウム拡散法 Granted JPS60253216A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58237035A JPS60253216A (ja) 1983-12-14 1983-12-14 半導体へのアルミニウム拡散法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58237035A JPS60253216A (ja) 1983-12-14 1983-12-14 半導体へのアルミニウム拡散法

Publications (2)

Publication Number Publication Date
JPS60253216A true JPS60253216A (ja) 1985-12-13
JPS6356701B2 JPS6356701B2 (https=) 1988-11-09

Family

ID=17009429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58237035A Granted JPS60253216A (ja) 1983-12-14 1983-12-14 半導体へのアルミニウム拡散法

Country Status (1)

Country Link
JP (1) JPS60253216A (https=)

Also Published As

Publication number Publication date
JPS6356701B2 (https=) 1988-11-09

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