JPS60250788A - イメ−ジセンサ - Google Patents

イメ−ジセンサ

Info

Publication number
JPS60250788A
JPS60250788A JP59106980A JP10698084A JPS60250788A JP S60250788 A JPS60250788 A JP S60250788A JP 59106980 A JP59106980 A JP 59106980A JP 10698084 A JP10698084 A JP 10698084A JP S60250788 A JPS60250788 A JP S60250788A
Authority
JP
Japan
Prior art keywords
light
bias voltage
reverse bias
photodiode
light receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59106980A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0554615B2 (https=
Inventor
Shinichiro Ishida
進一郎 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Shimazu Seisakusho KK
Original Assignee
Shimadzu Corp
Shimazu Seisakusho KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp, Shimazu Seisakusho KK filed Critical Shimadzu Corp
Priority to JP59106980A priority Critical patent/JPS60250788A/ja
Publication of JPS60250788A publication Critical patent/JPS60250788A/ja
Publication of JPH0554615B2 publication Critical patent/JPH0554615B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/10—Memory cells having a cross-point geometry

Landscapes

  • Spectrometry And Color Measurement (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP59106980A 1984-05-26 1984-05-26 イメ−ジセンサ Granted JPS60250788A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59106980A JPS60250788A (ja) 1984-05-26 1984-05-26 イメ−ジセンサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59106980A JPS60250788A (ja) 1984-05-26 1984-05-26 イメ−ジセンサ

Publications (2)

Publication Number Publication Date
JPS60250788A true JPS60250788A (ja) 1985-12-11
JPH0554615B2 JPH0554615B2 (https=) 1993-08-13

Family

ID=14447420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59106980A Granted JPS60250788A (ja) 1984-05-26 1984-05-26 イメ−ジセンサ

Country Status (1)

Country Link
JP (1) JPS60250788A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7795570B2 (en) 2004-03-10 2010-09-14 Waters Technologies Corporation Self-scanned photodiode array with selectively-skipped pixels

Also Published As

Publication number Publication date
JPH0554615B2 (https=) 1993-08-13

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