JPS6024833A - Semiconductive laser medical apparatus - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a laser medical device using a semiconductor laser.

Conventional configuration and problems It has been reported that symptoms such as stiff shoulders can be treated by irradiating the human body with laser light.

A conventional medical device using this laser light, for example, as shown in FIG. 1, extracts laser light from a gas laser or solid-state laser device 1 through an optical fiber 2 and irradiates it onto an affected area.

However, this device has the disadvantage that the laser device is large and the main body and irradiation part are separated, making it inconvenient to handle. In order to solve this drawback, a health and treatment device is being considered that uses a compact, lightweight semiconductor laser with low power consumption to integrate the laser beam irradiation part and the main body into a single body type that is easy to handle. . However, the wavelength of the conventionally used GaAIAs laser is o.
, about 85 μm, and at this wavelength, most of the light is absorbed at the surface of the skin, and if the affected area is deep from the skin, there is a drawback that the therapeutic effect is small. On the other hand, InGaAs
P-based semiconductor lasers are capable of emitting light with a wavelength of 1.3 to 1.6 μm, and light with this wavelength penetrates deeply through the skin, making it possible to increase the therapeutic effect in deep areas. However, InGa
AsP-based lasers have the disadvantage of relatively low output, and are not generally used. /ζ0As described above, in conventional semiconductor medical devices, emphasis has been placed on increasing the optical output, and the focus has been placed on increasing the optical output so that the affected area is separated from the skin. The treatment effect in deep cases was not taken into account.

OBJECTS OF THE INVENTION The present invention seeks to eliminate the above-mentioned drawbacks and improves therapeutic effects both on the surface and deep within the skin.

Structure of the Invention The present invention utilizes, for example, a Ga AjJ semiconductor laser and an In
This is a semiconductor laser medical device whose constituent elements are semiconductor lasers with different wavelengths, such as P-based semiconductor lasers.

DESCRIPTION OF THE EMBODIMENTS An embodiment of the present invention will be explained along with the second part. Semiconductor lasers sa and 3b are A a As optical semiconductor lasers that oscillate at a wavelength of 0.85 μm, and semiconductor laser 3c.

3d is an InP semiconductor laser that oscillates at a wavelength of 1.3 μm. These lasers are arranged in a ring shape and condensed at the center of the circle using condensing lenses 4a, 4b, 4c, and 4d. A reflector 5 having a pyramidal structure is disposed at the center of the circle, the direction of travel is bent approximately at right angles, and the light is focused again using a condensing lens 6, so that the laser spot can be imaged in close proximity. By using a plurality of lasers in this way, the output can be increased, and the problem of low output, which is a drawback of InP lasers, can be solved.

As described in detail, according to the present invention, by using GaAs-based and InP-based semiconductor lasers that output laser beams with different wavelengths, the skin surface can be easily At the same time, the laser beam can be influenced even deep into the skin, increasing the therapeutic effect.

[Brief explanation of the drawing]

FIG. 2 is an exploded perspective view of the main parts of the steaming apparatus. 3a, 3b.=...-AaAs semiconductor laser, 3c. 3d...InP semiconductor laser.

Claims (1)

[Claims] Laser medical device. (2) GaAs-based semiconductor laser and I'nP-based semiconductor laser