JPH0199576A - Local therapy apparatus with semiconductor laser - Google Patents

Local therapy apparatus with semiconductor laser

Info

Publication number
JPH0199576A
JPH0199576A JP62257567A JP25756787A JPH0199576A JP H0199576 A JPH0199576 A JP H0199576A JP 62257567 A JP62257567 A JP 62257567A JP 25756787 A JP25756787 A JP 25756787A JP H0199576 A JPH0199576 A JP H0199576A
Authority
JP
Japan
Prior art keywords
beams
semiconductor laser
lens
laser
coaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62257567A
Other languages
Japanese (ja)
Inventor
Tokuo Saeki
徳夫 佐伯
Iwajiro Senbokutani
仙北谷　岩次郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62257567A priority Critical patent/JPH0199576A/en
Publication of JPH0199576A publication Critical patent/JPH0199576A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Laser Surgery Devices (AREA)
  • Radiation-Therapy Devices (AREA)
  • Finger-Pressure Massage (AREA)

Abstract

PURPOSE:To prevent dangers due to error irradiation, by constructing the title apparatus of an invisible semiconductor laser, a lens to make guiding visible semiconductor laser beams parallel, a prism to form parallel beams into coaxial beams, and a lens to condense coaxial beams. CONSTITUTION:A invisible semiconductor laser 11, a lens 9 to make its laser beams parallel, a guiding visible semiconductor laser, and a lens 8 to make its laser beams parallel are fixed to the base 7. A prism 8 to form the two parallel beams into coaxial beams is likewise fixed to the probe case 6. Further, a lens 5 to condense the coaxial beams is fixed to the tip of the case 6. The probe case 6 is pistol-like: arrow-ward rotation of lever 13 allows a switch 12 to turn ON, laser drive circuit to set in action, and laser beams to irradiate. Dangers due to error irradiation are prevented with a simple structure by such a manner to make invisible guiding visible beams coaxial.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は危険防止を目的とした、半導体レーザによる開
始治療装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION The present invention relates to a device for starting treatment with a semiconductor laser for the purpose of preventing danger.

従来の技術 一般に微弱のレーザ光を生体の圧痛点（通常はつぼと呼
ばれている）に照射することにより、肩こりなどの痛み
が緩解されることはよく知られている。使用されている
レーザ波長は重に生体透過率の関係により、赤外線領域
であるだめ、肉眼で見ることは不可能である。BACKGROUND OF THE INVENTION It is well known that pain such as stiff shoulders can be alleviated by irradiating tender points (usually called pressure points) of a living body with weak laser light. The laser wavelength used is in the infrared region, which is impossible to see with the naked eye, due to the biological transmittance.

最近は特に高出力の赤外線半導体レーザが開発され、そ
れを組込んだポータプルの簡便な治療器が開発されつつ
ある中で、十分な安全対策がなされていない。従来例と
して、特公昭５７−１９０９０４号公報には複数個のガ
イド光を使用した装置が開示されている。本装置におい
て、使用レーザ光は非可視光のため、レーザ焦点位置及
び拡がりを確認できないため、レーザ光の外周に複数の
可視ガイド光を配置して、レーザ光の焦点位置及び拡が
りを可視ガイド光により肉眼で確認できるようにしてい
る。Recently, particularly high-output infrared semiconductor lasers have been developed, and while portable portable treatment devices incorporating them are being developed, sufficient safety measures have not been taken. As a conventional example, Japanese Patent Publication No. 57-190904 discloses a device using a plurality of guide lights. In this device, the laser beam used is invisible light, so the laser focal position and spread cannot be confirmed. Therefore, multiple visible guide lights are arranged around the outer periphery of the laser beam, and the visible guide light can be used to check the laser beam focal position and spread. This makes it possible to check with the naked eye.

発明が解決しようとする問題点 前記装置では１．複数個のガイド光により、非可視光の
レーザ光の光軸及び拡がりを目視することを可能にして
いるが、非可視光のレーザ光の光軸、及び拡がりに合せ
、複数個のガイド光を調整することは難しく、かつコス
トアップにつながる。Problems to be solved by the invention In the above device, 1. Multiple guide lights make it possible to visually see the optical axis and spread of the invisible laser light. Adjustment is difficult and increases costs.

本発明は従来装置に見られる欠点をなくし、非可視光ガ
イド用可視光を同軸にすることにより、簡単な構造で、
誤照射による危険を防止する装置を提供するものである
。The present invention eliminates the drawbacks seen in conventional devices and has a simple structure by making visible light for invisible light guide coaxial.
The present invention provides a device that prevents dangers due to erroneous irradiation.

問題点を解決するための手段 本発明は、非可視光半導体レーザと、ガイド用可視光半
導体レーザ又はＩＥＤと、前記半導体レーザ光を平行光
線にするレンズと、前記平行光線を同軸光にするための
プリズムと、前記同軸光を集束するためのレンズとで、
主に構成されてなる半導体レーザによる開始治療装置で
ある。Means for Solving the Problems The present invention provides an invisible light semiconductor laser, a guiding visible light semiconductor laser or IED, a lens for converting the semiconductor laser light into parallel light, and a method for converting the parallel light into coaxial light. a prism, and a lens for focusing the coaxial light,
This is a starting treatment device that mainly consists of a semiconductor laser.

作　　用 非可視光半導体レーザを用いた、レーザ医療装置におい
て、誤照射による危険を防止することができる。Danger due to erroneous irradiation can be prevented in a laser medical device using a non-visible light semiconductor laser.

実施例 本発明の実施例について、以下図面に従って説明する。Example Embodiments of the present invention will be described below with reference to the drawings.

第１図は本発明の一実施例の半導体レーザによる開始治
療装置の全体図であり、半導体レーザを駆動するための
電源及びその制御機能をもった本体部１と、半導体レー
ザと、可視光半導体レーザと、その財動回路と光学系が
組込まれたグローブ３と、本体部１と前記プローブ２と
を電気的に接続するケーブル４と接続端子２とで構成さ
れている。FIG. 1 is an overall view of a starting treatment device using a semiconductor laser according to an embodiment of the present invention, which includes a main body 1 having a power source for driving the semiconductor laser and its control function, a semiconductor laser, and a visible light semiconductor. It is composed of a glove 3 incorporating a laser, its financial circuit and optical system, a cable 4 and a connecting terminal 2 for electrically connecting the main body 1 and the probe 2.

第２図はプローブ３の詳細断面図である。基台７には、
非可視光半導体レーザ１１と、そのレーザ光を平行光線
にするためのレンズ９と、ガイド用可視光半導体レーザ
と、そのレーザ光を平行光線にするためのレンズ８が取
りつけられて、プローブケース６に固定されている。FIG. 2 is a detailed sectional view of the probe 3. On base 7,
An invisible light semiconductor laser 11, a lens 9 for converting the laser light into parallel light beams, a visible light semiconductor laser for guiding, and a lens 8 for converting the laser light into parallel light beams are attached to the probe case 6. is fixed.

前記２個の平行光線を同軸光にするためのプリズム８（
光波長差による屈折率の差を利用して、）も同様にプロ
ーブケース６に固定されている。前記同軸光を集束する
ためのレンズ６がプローブケース６の先端部に固定され
ている。プローブケース６はピストル状になっていて、
レバー１３はバネ１４により矢印と逆方向に付勢されて
いる。レバー１３を矢印の方向に回転させることにより
、スイッチ１２がＯＮになり、レーザ駆動回路が動作し
、レーザ光が照射される。a prism 8 (
) is similarly fixed to the probe case 6 by utilizing the difference in refractive index due to the difference in light wavelength. A lens 6 for focusing the coaxial light is fixed to the tip of the probe case 6. The probe case 6 is pistol-shaped,
The lever 13 is urged by a spring 14 in the direction opposite to the arrow. By rotating the lever 13 in the direction of the arrow, the switch 12 is turned on, the laser drive circuit is operated, and the laser beam is irradiated.

前記非可視光半導体レーザの波長は前記ガイド用可視光
半導体レーザの波長より長いため、非可視光レーザの方
がレンズ５より外側に集束される。Since the wavelength of the invisible light semiconductor laser is longer than the wavelength of the guiding visible light semiconductor laser, the invisible light laser is focused to the outside of the lens 5.

Ｆｌ　は非可視光半導体レーザの焦点、Ｆ２は可視光半
導体レーザの焦点を示す。Fl indicates the focus of the invisible light semiconductor laser, and F2 indicates the focus of the visible light semiconductor laser.

発明の効果 半導体レーザ医療装置において、誤照射による危険の防
止を計るように構成されているため、安全かつ手軽に施
療することができる。Effects of the Invention Since the semiconductor laser medical device is configured to prevent dangers due to erroneous irradiation, treatment can be performed safely and easily.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例の半導体レーザ局所治療装置
の全体図、第２図は同装置のプローブの断面構成図であ
る。 １・・・・・・本体部、２・・・・・・接続端子、３・
・・・・・プローブ、４・・・・・・ケーブル、５・・
・・・・レンズ、６・・・・・・プローブケース、７・
・・・・・基台、８・・・・・・プリズム、９・・・・
・・レンズ、１０・・・・・・可視光半導体レーザ、１
１・・・０１．非可視光半導体レーザ、１２・・・・・
・スイッチ、１３・・・・・・レバー、１４・・・・・
・バネ、１５・・・・・・半導体レーザ駆動回路、Ｆｌ
　　・・・・・・非可視光半導体レーザの焦点、Ｆ２・
・・・・・可視光半導体レーザの焦点。FIG. 1 is an overall view of a semiconductor laser local treatment device according to an embodiment of the present invention, and FIG. 2 is a cross-sectional configuration diagram of a probe of the same device. 1...Main unit, 2...Connection terminal, 3.
...Probe, 4...Cable, 5...
...Lens, 6...Probe case, 7.
...Base, 8...Prism, 9...
...Lens, 10...Visible light semiconductor laser, 1
1...01. Invisible light semiconductor laser, 12...
・Switch, 13... Lever, 14...
・Spring, 15... Semiconductor laser drive circuit, Fl
...Focus of invisible light semiconductor laser, F2.
...Focus of visible light semiconductor laser.

Claims (1)

【特許請求の範囲】[Claims] 駆動源本体と、プローブと、前記駆動源本体とプローブ
を電気的接続する部材を有し、前記プローブは、非可視
光半導体レーザとガイド用可視光半導体レーザと、前記
２個の半導体レーザ光を平行光線にする光学系と、前記
２個の平行光線を同軸光線にするための光学系と、前記
同軸光を集束するための光学系を具備することを特徴と
する半導体レーザ局処治療装置。The probe includes a drive source main body, a probe, and a member for electrically connecting the drive source main body and the probe, and the probe includes an invisible light semiconductor laser, a visible light semiconductor laser for guiding, and the two semiconductor laser beams. A semiconductor laser local treatment apparatus comprising: an optical system that converts the two parallel beams into coaxial beams; an optical system that converts the two parallel beams into coaxial beams; and an optical system that focuses the coaxial beams.
JP62257567A 1987-10-13 1987-10-13 Local therapy apparatus with semiconductor laser Pending JPH0199576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62257567A JPH0199576A (en) 1987-10-13 1987-10-13 Local therapy apparatus with semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62257567A JPH0199576A (en) 1987-10-13 1987-10-13 Local therapy apparatus with semiconductor laser

Publications (1)

Publication Number Publication Date
JPH0199576A true JPH0199576A (en) 1989-04-18

Family

ID=17308064

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62257567A Pending JPH0199576A (en) 1987-10-13 1987-10-13 Local therapy apparatus with semiconductor laser

Country Status (1)

Country Link
JP (1) JPH0199576A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT403101B (en) * 1990-06-29 1997-11-25 Walter Helmut Dipl Ing Dr Miniature laser for human and veterinary medical use
JP2013500818A (en) * 2009-08-04 2013-01-10 ミハエル・シュローサー Handheld low level laser therapy equipment
US9553422B2 (en) 2009-08-04 2017-01-24 Medical Coherence Llc Multiple aperture hand-held laser therapy apparatus
US9946082B2 (en) 2013-04-30 2018-04-17 Medical Coherence Llc Handheld, low-level laser apparatuses and methods for low-level laser beam production

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT403101B (en) * 1990-06-29 1997-11-25 Walter Helmut Dipl Ing Dr Miniature laser for human and veterinary medical use
JP2013500818A (en) * 2009-08-04 2013-01-10 ミハエル・シュローサー Handheld low level laser therapy equipment
US9358402B2 (en) 2009-08-04 2016-06-07 Michael Schlosser Handheld low-level laser therapy apparatus
US9553422B2 (en) 2009-08-04 2017-01-24 Medical Coherence Llc Multiple aperture hand-held laser therapy apparatus
US10379341B2 (en) 2009-08-04 2019-08-13 Medical Coherence Llc Multiple aperture hand-held laser therapy apparatus
US9946082B2 (en) 2013-04-30 2018-04-17 Medical Coherence Llc Handheld, low-level laser apparatuses and methods for low-level laser beam production

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