JPS6023994Y2 - Semiconductor magnetoelectric conversion device - Google Patents

Description

[Detailed Description of the Invention] The present invention relates to a semiconductor magnetoelectric conversion device that utilizes the Hall effect.

The structure of conventionally well-known magnetoelectric transducers, especially Hall elements, is the first.
As shown in Figures a and b, it has a structure in which a semiconductor substrate 1 is provided with voltage terminals 2 and 3 and Hall voltage output terminals 4 and 5.

In the Hall element of this structure, not only is the Hall effect not effectively obtained due to the short-circuit effect of the terminal portion at and around the current terminal 2.3, but it is also a cause of poor linearity between the magnetic field and the Hall output voltage.

Further, it is desirable that the Hall output voltage terminals 4 and 5 ideally make point contact with the substrate 1 and have zero contact resistance.

However, in actual manufacturing, since there is a finite surface contact, there are drawbacks such as reduced efficiency and current distribution due to the short circuit effect at the terminal part, making it difficult to obtain a Hall element with high precision.

The present invention solves the above-mentioned drawbacks, and the main part of the first conductive layer is provided between the first conductive layer of a predetermined conductivity type subjected to the magneto-electric effect and the predetermined metal electrode for use on this layer. By arranging the second conductive layer having a predetermined resistance value in a direction perpendicular to the plane, a decrease in the efficiency of the magnetoelectric effect due to a short circuit effect at the connection with the first conductive layer is prevented, and An object of the present invention is to provide a semiconductor magnetoelectric conversion device with improved linearity of Hall voltage output.

The present invention will be specifically explained below with reference to an embodiment shown in the drawings.

In FIGS. 2a and 2b, 10 is a P-type semiconductor substrate, 1
Reference numeral 1 denotes a semiconductor region of an N-type layer formed by diffusion or epitaxial growth, and is a portion that effectively receives the magnetoelectric effect (Hall effect).

12 and 13 are current terminals forming a first metal electrode for flowing current into the N-type layer 11; 14 and 15 are output terminals forming a second metal electrode for extracting the Hall voltage;
These terminals 12 to 15 are usually formed by A1 vapor deposition or the like.

Directly below the terminals 12 to 15 are lead-out portions 20, 21, 22 made of an N-type semiconductor to provide a predetermined resistance value.
, 23, and in particular are formed in a direction perpendicular to the main surface of the substrate 10 so as to be in the same direction as the magnetic field.

Further, 16, 17, 18, and 19 are semiconductor regions of a P-type layer for surrounding the N-type layer 11 on its entire surface, and are generally formed by diffusion or the like.

Therefore, to describe the effect of this configuration, the current terminal 12.
The current direction of the extraction portion 20.23 in 13 is the same as that of the substrate 1.
Since it is perpendicular to the main surface of the N-type layer 11 and coincides with the magnetic field direction B as shown in FIG. , the short-circuit effect at the terminals 12 and 13 is no longer applied directly to the N-type layer 11.

That is, the dispersion effect due to the semiconductor distributed resistance of the extraction portion 20.23 works, and the short circuit effect at the input ends 11A and IIB of the N-type layer 11 is alleviated.

Furthermore, the output terminal 14.15 of the Hall voltage is also provided with a lead-out portion 21.22 made of an N-type semiconductor in the same manner as described above, and the short circuit effect near the input end 11c of the N-type layer 11, IID is alleviated. The current distribution in the N-type layer 11, which is subject to the magnetoelectric effect, is improved.

In addition, this device can be used in integrated circuits, and since it has a structure surrounded by the P-type layer 10 and 16.17°18.19, it can be electrically connected by grounding the P-type layer 10. The effect of shielding against target noise can be obtained.

Note that in this example, the N-type layer 11 which is subject to the magnetoelectric effect was formed on the semiconductor substrate 10 by diffusion or the like.
A configuration may be employed in which a resistive layer of a predetermined conductivity type having a predetermined resistance value is provided as an extraction portion on a semiconductor substrate subjected to a magnetoelectric effect as shown in FIG. 1, and a metal electrode is formed on this resistive layer.

As described above, in the device of the present invention, a first conductive layer of a predetermined conductivity type that is formed on the entire surface of a semiconductor substrate and receives a magnetoelectric effect, and a first conductive layer that is disposed facing each other in one direction on this first conductive layer and is applied with a voltage. a first metal electrode that generates a Hall electromotive force, and a second metal electrode that is disposed on the first conductive layer and faces in another direction that is perpendicular to the one direction and generates a Hall electromotive force; a second conductive layer disposed between the conductive layer and the first and second metal electrodes in a direction perpendicular to the main surface of the first conductive layer, and having a predetermined resistance value; Therefore, at the connection between the input/output terminal and the first conductive layer, the dispersion effect due to the semiconductor distributed resistance works to alleviate the short circuit effect, thereby further improving the linearity and sensitivity of the magnetoelectric effect. It has the excellent effect of improving

[Brief explanation of the drawing]

1A and 1B are a plan view and a side view of a conventional device, and FIGS. 2A and 2B are a plan view and a sectional view of a semiconductor magnetoelectric conversion device according to the present invention. DESCRIPTION OF SYMBOLS 10... P-type semiconductor substrate, 11... N-type layer forming the first conductive layer, 12, 13... First
Current terminals forming metal electrodes, 14.15...Output terminals forming second metal electrodes, 20, 21, 22, 23
. . . A take-out portion forming the second conductive layer.

Claims (1)

[Scope of utility model registration request] a first conductive layer of a predetermined conductivity type that is formed on the entire surface of a semiconductor substrate and receives a magnetoelectric effect; a first metal electrode that is disposed facing each other in one direction on the first conductive layer and receives voltage application; a second metal electrode that is disposed oppositely on the first conductive layer in another direction perpendicular to the one direction and generates a Hall electromotive force;
and a second conductive layer having a predetermined resistance value, the second conductive layer being disposed between the metal electrode and the main surface of the first conductive layer in a direction perpendicular to the main surface of the first conductive layer.