JPS60235856A - Semiconductive resin composition - Google Patents

Semiconductive resin composition

Info

Publication number
JPS60235856A
JPS60235856A JP9020384A JP9020384A JPS60235856A JP S60235856 A JPS60235856 A JP S60235856A JP 9020384 A JP9020384 A JP 9020384A JP 9020384 A JP9020384 A JP 9020384A JP S60235856 A JPS60235856 A JP S60235856A
Authority
JP
Japan
Prior art keywords
styrene
butadiene
content
weight
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9020384A
Other languages
Japanese (ja)
Inventor
Ichiro Yamamoto
一郎 山元
Kiyousuke Tateno
舘野 亨介
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainichiseika Color and Chemicals Mfg Co Ltd
Original Assignee
Dainichiseika Color and Chemicals Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainichiseika Color and Chemicals Mfg Co Ltd filed Critical Dainichiseika Color and Chemicals Mfg Co Ltd
Priority to JP9020384A priority Critical patent/JPS60235856A/en
Publication of JPS60235856A publication Critical patent/JPS60235856A/en
Pending legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Conductive Materials (AREA)

Abstract

PURPOSE:To provide the titled compsn. which has excellent vacuum forming properties, can be vacuum-formed into a thin-wall article and has a semi-permanent antistatic effect, by blending carbon black with a specified styrene/butadiene block copolymer. CONSTITUTION:5-60wt% carbon black such as furnace black is blended with a styrene/butadiene block copolymer having a butadiene content of 10-35wt%, a styrene content of 90-65wt% and an MW of 100,000-250,000. EFFECT:Thin-wall moldings having a uniform thickness can be obtd. without causing a pinhole phenomenon at flexed parts or drawn parts during vacuum forming. USE:Containers for storage and transportation of electronic parts such as LSI, IC, silicon chip, etc.

Description

【発明の詳細な説明】 本発明は真空成形性にすぐれた半導電性組成物に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductive composition with excellent vacuum formability.

導電性樹脂組成物は、LSIやicの部品用ケース等と
して広く利用されるに至っている。
Conductive resin compositions have come to be widely used as cases for parts of LSIs and ICs.

LSilC,、MO3型LSI、シリコーンチップ、シ
リコーンウェハー等の電子材料部品は運搬或いは保存中
、静電気や電波障害を受けると破壊してしまうため、そ
れを回避するために、導電性樹脂組成物によって成形さ
れた保存ケース等が多く利用されている。
Electronic material parts such as LSilC, MO3 type LSI, silicone chips, and silicone wafers are destroyed if they are exposed to static electricity or radio wave interference during transportation or storage, so to avoid this, they are molded with conductive resin compositions. Many storage cases are used.

前記の電子材料の中でも特にシリコーンチップ等を保管
、運搬する容器としては、軽■で取扱いが容易でありか
つ静電防止効果のある真空成形品が便利である。
Among the above-mentioned electronic materials, vacuum-formed products that are lightweight, easy to handle, and have an antistatic effect are convenient as containers for storing and transporting silicone chips and the like.

かかる理由から従来ポリ塩化ビニルを静電防止処理した
組成物の真空成形品も使用されているが、使用される現
行の組成物の性能上、より軽く、より薄<、小さな電子
材料の保管、運搬用容器を安定に製造するのは極めて困
難であった。
For this reason, vacuum-formed products made from polyvinyl chloride treated with antistatic treatment have been used, but due to the performance of the current compositions used, they are lighter and thinner, and are suitable for storage of small electronic materials. It has been extremely difficult to stably manufacture transportation containers.

当該目的に通った成形材料を得るために要求される半導
電性組成物の特性としては、 ■加工安定性があること ■静電防止の目的を達成する
ために真空成形品で表面抵抗が10”〜106Ωである
こと ■軽薄短小の真空成形品を製造したとき、絞り部
分等に破れ、穴開き等が発生しないことである。
The characteristics of the semiconductive composition required to obtain a molding material that meets the purpose are: ■Processing stability; ■Surface resistance of 10% for vacuum-formed products to achieve the purpose of preventing static electricity. - 106 Ω ■When producing light, thin, short, and small vacuum-formed products, tearing, holes, etc. should not occur in the drawing area, etc.

本発明者等は前記に鑑みて種々研究を重ねた結果、ブタ
ジェン含有率が10〜35重景%、スチレン含有率が6
5〜90重量%のスチレンーブタジエンブロソク共重合
体にカーボンブラ。
In view of the above, the present inventors have conducted various studies and found that the butadiene content is 10 to 35%, and the styrene content is 6%.
5 to 90% by weight of styrene-butadiene broth copolymer and carbon bra.

りを5〜50重景%混練し、半導電性を付与した半導電
性樹脂組成物が薄物(厚さ約200μ)の真空成形性に
すぐれ半永久的に静電防止効果を有する軽薄短小な電子
材料の保管、運搬容器として、最適であることを見出し
本発明に到達した。すなわち、本発明は、ブタジェン含
有率が10〜35重景%、スチレン含有率が65〜90
重景%のスチレンーブタジエンブロソク共重合体にカー
ボンブランクを配合して成ることを特徴とする真空成形
性にすぐれた半導電性樹脂組成物である。
The semiconductive resin composition, which is made by kneading 5 to 50% of silica to impart semiconductivity, has excellent vacuum formability into thin objects (approximately 200μ thick) and has a semi-permanent antistatic effect. We have discovered that it is optimal as a container for storing and transporting materials, and have arrived at the present invention. That is, the present invention has a butadiene content of 10 to 35% and a styrene content of 65 to 90%.
This is a semiconductive resin composition with excellent vacuum formability, which is characterized by blending a carbon blank with a styrene-butadiene broth copolymer of a heavy weight percentage.

本発明で使用するスチレンーブタジエンブロソク共重合
体とは、ブタジェン含有率がlO〜35重景%、スチレ
ン含有率が65〜90重量%で分子量が100.000
〜250,000のものである。
The styrene-butadiene polymer copolymer used in the present invention has a butadiene content of 10 to 35% by weight, a styrene content of 65 to 90% by weight, and a molecular weight of 100.000.
~250,000.

本発明に使用するカーボンブランクもまた導電性を有す
る各種のカーボンブランクを用いることができ、具体的
にはファーネスブランク、アセチレンブランク、チャン
ネルブランク等が挙げられる。
Various carbon blanks having electrical conductivity can also be used as the carbon blank used in the present invention, and specific examples thereof include a furnace blank, an acetylene blank, a channel blank, and the like.

この使用量は、全組成物重量中5〜60重量%好ましく
は5〜40重景%である。
The amount used is 5 to 60% by weight, preferably 5 to 40% by weight, based on the total weight of the composition.

なお、本発明においては前記の各成分の他、必要に応じ
てGPスチレン、Hlスチレン等の熱可塑性樹脂、酸化
防止剤、滑剤等を添加して使用することができる。
In addition, in the present invention, in addition to the above-mentioned components, thermoplastic resins such as GP styrene and Hl styrene, antioxidants, lubricants, etc. may be added as necessary.

前記した本発明の半導電性樹脂組成物を真空成形機に供
して厚さ200μのフィルムを成形した結果、成形時フ
ィルムそのものに穴があくごとがなく、また屈曲部分や
絞り部分にも穴アキ現象が生じることがなく、厚さの一
定した真空成形品を得ることができる。
As a result of molding a film with a thickness of 200μ by using the semiconductive resin composition of the present invention described above in a vacuum forming machine, there were no holes in the film itself during molding, and there were no holes in the bent or drawn parts. A vacuum-formed product with a constant thickness can be obtained without any phenomenon occurring.

以下、本発明を実施例によって具体的に説明する。Hereinafter, the present invention will be specifically explained with reference to Examples.

実施例1 第1表に示すようにスチレン−ブタジェンブロック共重
合体(ブタジェン含有率25重量%、スチレン含有率7
5重量%、 商品名;に−レジンKP−03、フィリソ
ブスベトロリウム社製品)74重量部、アセチレンブラ
ンク25重量部、ステアリン酸亜鉛1重量部を1.77
!のテスト用バンバリーミキサ−によって温度が170
〜180℃で樹脂が溶融ブロックしてから5分間ロータ
ー回転76rpiでアセチレンブラックが樹脂中に分散
するように混線を行う。
Example 1 As shown in Table 1, a styrene-butadiene block copolymer (butadiene content: 25% by weight, styrene content: 7% by weight)
5% by weight, 74 parts by weight (trade name: Ni-Resin KP-03, product of Philisobusvetrolium), 25 parts by weight of acetylene blank, 1 part by weight of zinc stearate, 1.77 parts by weight
! The test Banbury mixer brought the temperature to 170℃.
After the resin is melted and blocked at ~180° C., the rotor is rotated at 76 rpm for 5 minutes to cross-wire so that acetylene black is dispersed in the resin.

混練終了後、混練物を排出し、6″Φ×12Lのミキシ
ングロールにて厚さ約3鶴、中20Onのシートを引き
出す。このシートを角ペレタイザーにて3X3X3鶴の
角ペレットに裁断する。
After the kneading is completed, the kneaded material is discharged, and a sheet of about 3 squares thick and 20 mm inside is pulled out using a 6"Φ x 12L mixing roll. This sheet is cut into square pellets of 3 x 3 x 3 cranes using a square pelletizer.

この角ペレットを40賎ΦT−ダイ押出機(L/D=2
0 圧縮比)にて温度180℃〜200℃スクリーン回
転60rpmの条件でフィルム厚200μのフィルムを
成形した。
The square pellets are processed using a 40mm ΦT-die extruder (L/D=2
A film having a film thickness of 200 μm was molded at a temperature of 180° C. to 200° C. and a screen rotation of 60 rpm.

前記の200μのフィルムラ温度130℃〜140℃で
真空成形して箱形のケースを成形した。
A box-shaped case was formed by vacuum forming the 200μ film at a temperature of 130°C to 140°C.

得られたケースの絞り部分について、穴開き、偏肉等の
有無を観察した結果、肉厚が均一で穴開きのないもので
あった。
The drawn portion of the obtained case was observed for the presence of holes, uneven thickness, etc., and the result was that the wall thickness was uniform and there were no holes.

実施例2〜6 第1表に示す組成物を実施例1と同一の方法によって半
導電性樹脂組成物を得た。この半導 。
Examples 2 to 6 Semiconductive resin compositions were obtained using the compositions shown in Table 1 in the same manner as in Example 1. This semiconductor.

電性樹脂組成物を各々角ベレット化し、更に角ペレット
からフィルムを成形、各実施例のフィルムを実施例1と
同様にして真空成形し、箱形のケースを成形した。
Each of the electrically conductive resin compositions was formed into square pellets, and films were formed from the square pellets, and the films of each example were vacuum formed in the same manner as in Example 1 to form box-shaped cases.

得られたケースの絞り部分について、穴開き、偏肉等の
有無を観察した結果、肉厚が均一で穴開きのないもので
あった。
The drawn portion of the obtained case was observed for the presence of holes, uneven thickness, etc., and the result was that the wall thickness was uniform and there were no holes.

比較例1〜7 第1表に示す組成物を実施例1と同一の方法によって半
導電性樹脂組成物を各々各ベレット化し、更に角ペレッ
トからフィルムを成形、各比較例のフィルムを実施例1
と同様にして真空成形し、箱形のケースを成形した。
Comparative Examples 1 to 7 The compositions shown in Table 1 were made into pellets using the same method as in Example 1, and then films were formed from the square pellets.
Vacuum forming was performed in the same manner as above to form a box-shaped case.

得られたケースの絞り部分について、穴開き、偏肉等の
有無を観察した結果、何れも絞り部分に穴開きが生じ、
特に折り曲げ部分で切れるところが多く発生し、目的と
する成形品が得られなかった。
As a result of observing the drawing part of the obtained case for the presence of holes, uneven thickness, etc., there were holes in the drawing part.
In particular, there were many breaks at the bending portions, and the desired molded product could not be obtained.

Claims (1)

【特許請求の範囲】[Claims] ブタジェン含有率が10〜35重景%、スチレン含有率
が65〜90重量%のスチレン−ブタジェンブロック共
重合体にカーボンブランクを配合して成ることを特徴と
する真空成形性にすぐれた半導電性樹脂組成物。
Semiconductor with excellent vacuum formability characterized by blending a carbon blank with a styrene-butadiene block copolymer having a butadiene content of 10 to 35 weight percent and a styrene content of 65 to 90 weight percent. resin composition.
JP9020384A 1984-05-08 1984-05-08 Semiconductive resin composition Pending JPS60235856A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9020384A JPS60235856A (en) 1984-05-08 1984-05-08 Semiconductive resin composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9020384A JPS60235856A (en) 1984-05-08 1984-05-08 Semiconductive resin composition

Publications (1)

Publication Number Publication Date
JPS60235856A true JPS60235856A (en) 1985-11-22

Family

ID=13991929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9020384A Pending JPS60235856A (en) 1984-05-08 1984-05-08 Semiconductive resin composition

Country Status (1)

Country Link
JP (1) JPS60235856A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008248056A (en) * 2007-03-30 2008-10-16 Asahi Kasei Chemicals Corp Conductive thermoplastic resin molded product

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5416558A (en) * 1977-06-30 1979-02-07 Polaroid Corp Electricallyyconductive plastics composition

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5416558A (en) * 1977-06-30 1979-02-07 Polaroid Corp Electricallyyconductive plastics composition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008248056A (en) * 2007-03-30 2008-10-16 Asahi Kasei Chemicals Corp Conductive thermoplastic resin molded product

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